JP4007390B2 - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器 Download PDFInfo
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- JP4007390B2 JP4007390B2 JP2006054425A JP2006054425A JP4007390B2 JP 4007390 B2 JP4007390 B2 JP 4007390B2 JP 2006054425 A JP2006054425 A JP 2006054425A JP 2006054425 A JP2006054425 A JP 2006054425A JP 4007390 B2 JP4007390 B2 JP 4007390B2
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- electro
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- light
- pin diode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
先ず、図2乃至図4を参照して、本実施の形態に係る電気光学装置の全体構成について説明する。
図6は本発明の第2の実施の形態に係る電気光学装置の概要を示す斜視図である。図6において図1と同一の構成要素には同一符号を付して説明を省略する。
Claims (11)
- 光を透過する素子基板および対向基板を対向配置してなる表示パネルと、前記素子基板側から前記表示パネルに照明光を照射する照明装置と、前記表示パネルの有効表示領域に形成された画素電極と、を備えた電気光学装置において、
前記画素電極に接続されてなり、前記素子基板に形成された半導体層を有するスイッチング素子と、
前記半導体層と同層に形成された半導体層を含み、前記対向基板側から入射する外光の照度を検出するPIN型ダイオードと、
前記PIN型ダイオードを構成する前記半導体層と前記前記素子基板との間に前記半導体層と対向して形成した反射部と、を備え、
前記照明装置から前記表示パネルに入射した光が、前記表示パネルの有効表示領域において変調されることを特徴とする電気光学装置。 - 前記スイッチング素子は、前記半導体層と前記素子基板との間に形成されたゲート電極、を含んでおり、前記反射部が前記ゲート電極と同層に形成されてなることを特徴とする請求項1に記載の電気光学装置。
- 前記半導体層がポリシリコン層を含んでなることを特徴とする請求項1又は2に記載の電気光学装置。
- 前記反射部は、前記PIN型ダイオードを構成する前記半導体層の全域に対向することを特徴とする請求項1乃至3のいずれかに記載の電気光学装置。
- 前記素子基板には、前記PIN型ダイオードが複数設けられており、複数の前記PIN型ダイオードを構成する前記半導体層に対向して前記反射部が夫々設けられることを特徴とする請求項1乃至4のいずれかに記載の電気光学装置。
- 前記反射部は、所定の固定電位点に接続されていることを特徴とする請求項1乃至5のいずれかに記載の電気光学装置。
- 前記反射部が、前記PIN型ダイオードのアノード又はカソードに接続されてなることを特徴とする請求項6に記載の電気光学装置。
- 前記PIN型ダイオードと前記照明装置の間であって前記受光素子と対向する領域には遮光板が設けられていることを特徴とする請求項1乃至7のいずれかに記載の電気光学装置。
- 前記PIN型ダイオードの検出結果を用いて前記照明装置の明るさを制御できるよう構成されてなることを特徴とする請求項1乃至8のうちいずれかに記載の電気光学装置。
- 前記対向基板は、前記有効表示領域を区画する遮光膜を備えており、前記遮光膜は前記受光素子の形成領域に開口を備えることを特徴とする請求項1乃至9のうちいずれかに記載の電気光学装置。
- 請求項1乃至請求項10のいずれか1つに記載の電気光学装置を用いて構成したことを特徴とする電子機器。
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JP2006054425A JP4007390B2 (ja) | 2006-03-01 | 2006-03-01 | 電気光学装置及び電子機器 |
US11/708,534 US7498649B2 (en) | 2006-03-01 | 2007-02-21 | Electro-optical device and electronic apparatus |
US12/314,658 US7759757B2 (en) | 2006-03-01 | 2008-12-15 | Electro-optical device and electronic apparatus |
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JP2006054425A JP4007390B2 (ja) | 2006-03-01 | 2006-03-01 | 電気光学装置及び電子機器 |
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JP2007111407A Division JP4656082B2 (ja) | 2007-04-20 | 2007-04-20 | 電気光学装置及び電子機器 |
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JP2007233027A JP2007233027A (ja) | 2007-09-13 |
JP4007390B2 true JP4007390B2 (ja) | 2007-11-14 |
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JP2006054425A Active JP4007390B2 (ja) | 2006-03-01 | 2006-03-01 | 電気光学装置及び電子機器 |
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US (2) | US7498649B2 (ja) |
JP (1) | JP4007390B2 (ja) |
Families Citing this family (26)
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DE102007057089B4 (de) * | 2006-12-22 | 2010-04-29 | Lg Display Co., Ltd. | Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben |
CN101281916B (zh) * | 2007-04-06 | 2010-05-26 | 群康科技(深圳)有限公司 | 光感测器和显示装置 |
KR100840098B1 (ko) * | 2007-07-04 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기전계발광 소자 및 그의 제조 방법 |
KR100884458B1 (ko) * | 2007-09-14 | 2009-02-20 | 삼성모바일디스플레이주식회사 | 유기전계발광장치 및 그의 제조 방법 |
JP5143514B2 (ja) * | 2007-09-21 | 2013-02-13 | 株式会社ジャパンディスプレイウェスト | 表示装置及び表示装置の製造方法 |
DE102007058003B4 (de) | 2007-12-03 | 2019-12-05 | Infineon Technologies Ag | Halbleiterbauelement, Sensorelement, Verwendung eines Halbleiterbauelements sowie Verfahren zur Abwehr von Lichtangriffen |
TWM348999U (en) * | 2008-02-18 | 2009-01-11 | Tpk Touch Solutions Inc | Capacitive touch panel |
JP2009238769A (ja) * | 2008-03-25 | 2009-10-15 | Toshiba Corp | 薄膜フォトダイオード及び表示装置 |
KR101535894B1 (ko) * | 2008-08-20 | 2015-07-13 | 삼성디스플레이 주식회사 | 광 감지회로, 이를 구비한 액정표시장치 및 이의 구동방법 |
KR101494454B1 (ko) * | 2008-11-13 | 2015-02-17 | 삼성디스플레이 주식회사 | 액정 표시 장치와 외부광의 측정 방법, 및 액정 표시 장치의 구동 방법 |
WO2010092709A1 (ja) * | 2009-02-10 | 2010-08-19 | シャープ株式会社 | 表示装置 |
JP5246795B2 (ja) * | 2009-08-19 | 2013-07-24 | 株式会社ジャパンディスプレイウェスト | センサ装置、センサ素子の駆動方法、入力機能付き表示装置および電子機器 |
JP5481127B2 (ja) * | 2009-08-19 | 2014-04-23 | 株式会社ジャパンディスプレイ | センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器 |
US9335854B2 (en) | 2009-09-30 | 2016-05-10 | Sharp Kabushiki Kaisha | Display device |
CN102511025B (zh) * | 2009-09-30 | 2015-02-04 | 夏普株式会社 | 显示装置 |
JP5721994B2 (ja) * | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
EP2490210B1 (en) | 2009-11-30 | 2017-09-06 | Sharp Kabushiki Kaisha | Display device |
US20120319978A1 (en) * | 2010-02-22 | 2012-12-20 | Sharp Kabushiki Kaisha | Display device |
WO2012014865A1 (ja) * | 2010-07-27 | 2012-02-02 | シャープ株式会社 | 表示装置およびその駆動方法 |
WO2012014864A1 (ja) * | 2010-07-27 | 2012-02-02 | シャープ株式会社 | 表示装置 |
KR101936619B1 (ko) * | 2012-10-31 | 2019-01-09 | 엘지디스플레이 주식회사 | 플렉서블 유기전계발광소자 및 그 제조방법 |
US9299731B1 (en) | 2013-09-30 | 2016-03-29 | Google Inc. | Systems and methods for selectable photodiode circuits |
CN106684103B (zh) * | 2017-02-28 | 2020-04-03 | 厦门天马微电子有限公司 | 阵列基板、显示面板及显示装置 |
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2006
- 2006-03-01 JP JP2006054425A patent/JP4007390B2/ja active Active
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2007
- 2007-02-21 US US11/708,534 patent/US7498649B2/en active Active
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2008
- 2008-12-15 US US12/314,658 patent/US7759757B2/en active Active
Also Published As
Publication number | Publication date |
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US7759757B2 (en) | 2010-07-20 |
US20090135325A1 (en) | 2009-05-28 |
US7498649B2 (en) | 2009-03-03 |
US20070215969A1 (en) | 2007-09-20 |
JP2007233027A (ja) | 2007-09-13 |
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