CN107894671B - 一种阵列基板和阵列基板的制造方法 - Google Patents

一种阵列基板和阵列基板的制造方法 Download PDF

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CN107894671B
CN107894671B CN201711072252.5A CN201711072252A CN107894671B CN 107894671 B CN107894671 B CN 107894671B CN 201711072252 A CN201711072252 A CN 201711072252A CN 107894671 B CN107894671 B CN 107894671B
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amorphous silicon
light sensing
sensing element
color resistance
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CN107894671A (zh
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何怀亮
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HKC Co Ltd
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HKC Co Ltd
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Abstract

本发明公开了一种阵列基板和阵列基板的制造方法，所述阵列基板包括：基板；开关组件，设置在所述基板上；像素电极，形成于所述开关组件上；其中，所述开关组件包括第一金属层；光感测元件，对应设置在所述开关组件一侧；色阻层，形成在所述开关组件和光感测元件上；其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一平面的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层。本发明能够减少开关组件光漏电的情况。

Description

一种阵列基板和阵列基板的制造方法
技术领域
本发明涉及一种显示器技术领域，特别是涉及一种阵列基板和阵列基板的制造方法。
背景技术
随着科技的发展和进步，液晶显示器由于具备机身薄、省电和辐射低等热点而成为显示器的主流产品，得到了广泛应用。现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(back light module)。液晶面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid CrystalDisplay，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含液晶面板和背光模组，液晶面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)、薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)和光罩(Mask)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(LiquidCrystal，LC)。
而随着LCD产品趋向于高解析度方向发展，人们发现该LCD技术也存在这一些亟待解决的问题，例如，现有的LCD产品多采用非晶硅，而基于非晶硅制成的TFT存在开关组件光漏电的情况。
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。
发明内容
有鉴于现有技术的上述缺陷，本发明所要解决的技术问题是提供一种能够减少开关组件光漏电的阵列基板和阵列基板的制造方法。
为实现上述目的，本发明提供了一种阵列基板，包括：
基板，
开关组件，设置在所述基板上；
像素电极，形成于所述开关组件上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在开关组件一侧；
色阻层，形成在所述开关组件和光感测元件上；
其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一平面的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层。
进一步的，所述第一金属层和第一电极层采用同一金属材料制成；
所述光感测元件的上部设置有与所述第一电极层对应的第二电极层。本实施方案中，该第一电极层和第二电极层分别作为该光感测元件的上下电极而存在，该光感测元件能够感知外界的光线强弱，从而使得该第一金属层和第二电极层之间的电信号发生不同的变化，从而被显示装置而感知，进而判断外界的光线强弱情况，实现显示装置对外界环境，特别是外界光线环境的自我调节，提高显示效果。
进一步的，还包括依次排列在所述第一电极层上方的P型非晶硅层和第一掺杂层，所述第一非晶硅层设置在所述P型非晶硅层和第一掺杂层之间。本实施方案中，该第一掺杂层，用于降低界面电位差，从而实现类似欧姆接触层的作用。
进一步的，所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；
所述第二掺杂层相对设置有源极金属层和漏极金属层；
所述第一非晶硅层和第二非晶硅层在同一平面，所述第一掺杂层和第二掺杂层在同一平面；
所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。本实施方案中，该光感测元件和开关组件的第一非晶硅层和第二非晶硅层在同一平面，第一掺杂层和第二掺杂层在同一平面，即该光感测元件和开关组件有很大一部分结构可以一起形成，只需要在两者之间形成钝化层，将其隔开即可，如此，需要被剥离的材料变少，即材料的利用率变高，而一起形成，则减少了工序，在减少生产成本的同时，提高了生产效率；其中，由于该第一电极层对开关组件中的非晶硅材料进行部分遮挡，而减少TFT开关组件光漏电的情况。
进一步的，所述钝化层的上方形成有色阻层。本实施方案中，该阵列基板实际上利用COA技术(即Color Filter on Array技术)，将色阻层形成在阵列基板上。
进一步的，所述色阻层形成在所述钝化层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
进一步的，所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。本实施方案中，该阵列基板实际上利用COA技术，将色阻层形成在阵列基板上，如此，便能够利用COA工艺来调控光感测波长范围，使得该光感测元件(color sensor，或者说R/G/B-sensor)能够作为全彩影像感测器(image sensor)；另外，该色阻层可以是RGB色阻作为一个单位，对应设置有光感测元件，也可以是R色阻、G色阻和B色阻作为一个单位，对应设置有光感测元件。
进一步的，所述光感测元件与开关组件成呈预设比例设置在所述阵列基板上。本实施方案中，该光感测元件与开关组件成比例设置，可以是一比一，一比二或者其他比例设置，只要能够实现光感测的目的即可，并将该光感测元件均匀的布设到阵列基板上，使得阵列基板的各处都能够进行外界光感测，避免感测不良而出现误判的问题发生。
进一步的，每个所述开关组件的两侧对应设置有一个光感测元件。本实施方案中，如此设置使得每个开关组件之间都设置有光感测元件，提高光感测的正确率。
本发明还公开了一种阵列基板，包括：
基板，开关组件，设置在所述基板上；
像素电极，形成于所述基板上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在所述开关组件一侧；
其中，所述光感测元件的第一电极层直接形成于所述基板上，且与所述第一金属层位于同一平面；
所述第一金属层和所述第一电极层采用同一金属材料制成；所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
所述光感测元件包括依次排列在所述第一电极层上方的P型非晶硅层、第一非晶硅层和第一掺杂层；
所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；所述第二掺杂层相对设置有源极金属层和漏极金属层；所述第一非晶硅层和第二非晶硅层在同一平面，所述第一掺杂层和第二掺杂层在同一平面；所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
所述光感测元件设置在每个相邻的开关组件之间
所述色阻层形成在所述钝化层上；所述色阻层形成在所述第二电极层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻；
所述色阻层上形成有像素电极。
本发明提供一种阵列基板的制造方法，包括步骤：
提供一基板；
在基板上形成第一金属层和第一电极层；
并在第一金属层上依次形成绝缘层、第二非晶硅层、第二掺杂层以及位于同一层的源极金属层和漏极金属层，以形成开关组件；
在第一电极层上依次形成P型非晶硅层、第一非晶硅层和第一掺杂层，以形成光感测元件；
在源极金属层、漏极金属层上形成钝化层和色阻层；
在所述第一掺杂层上形成第二电极层；在所述色阻层上形成像素电极。
本发明还公开了一种显示装置，包括控制部件；以及本发明任一公开的阵列基板。
开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本发明中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够对光感测元件中的第一非晶硅层起到遮挡光线而减少TFT光漏电的作用，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而伤眼睛；另外，将色阻层形成在开关组件和光感测元件上方，使用了COA技术(即Color Filter on Array技术)，并将其与光感测元件配合使用，使得色阻层与光感测元件的结合可以作为全彩影像感测器(image sensor)。
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本发明一种阵列基板的示意图；
图2是本发明另一种阵列基板的示意图；
图3是本发明实施例主动开关与像素电极连接的结构示意图；
图4是本发明一种阵列基板的制造方法的流程图；
图5是本发明一种显示装置的示意图。
附图说明，10、开关组件；11、第一金属层；12、绝缘层；13、第二非晶硅层；14、第二掺杂层；15、源极金属层；16、漏极金属层；17、钝化层；20、光感测元件；21、第一电极层；22、第二电极层；23、P型非晶硅层；24、第一非晶硅层；25、第一掺杂层；26、像素电极；30、色阻层；40、基板；100、阵列基板；101、控制部件；200、显示装置。
具体实施方式
为了使本技术领域的人员更好地理解本申请中的技术方案，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都应当属于本申请保护的范围。
图1是本发明一种阵列基板的示意图；图2是本发明另一种阵列基板的示意图；图3是本发明实施例主动开关与像素电极连接的结构示意图，其中图1和图2的区别主要在于该色阻层的设置不同，参见图1-3，本发明公开了一种阵列基板，包括：
基板40，
开关组件10，设置在基板40上；
像素电极26，形成于所述开关组件10上，与开关组件耦接；
所述开关组件10包括第一金属层11；
光感测元件20，对应设置在开关组件10旁边；
色阻层30，形成在所述开关组件10和光感测元件20上；
所述光感测元件20包括直接形成于所述基板上，且与所述第一金属层11位于同一平面的第一电极层21,以及设置在所述第一电极层21上方的第一非晶硅层24。
开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本发明中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够对光感测元件中的第一非晶硅层起到遮挡光线而减少TFT光漏电的作用，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而伤眼睛；另外，将色阻层形成在开关组件和光感测元件上方，使用了COA技术(即Color Filter on Array技术)，并将其与光感测元件配合使用，使得色阻层与光感测元件的结合可以作为全彩影像感测器(image sensor)。
其中，该第一电极层部分遮挡该第一非晶硅层可以起到减少光漏电的情况。
本实施例可选的，所述第一金属层11和第一电极层21采用同一金属材料制成；
所述光感测元件20的上部设置有与所述第一电极层21对应的第二电极层22。
本实施方案中，该第一电极层和第二电极层分别作为该光感测元件的上下电极而存在，该光感测元件能够感知外界的光线强弱，从而使得该第一金属层和第二电极层之间的电信号发生不同的变化，从而被显示装置而感知，进而判断外界的光线强弱情况，实现显示装置对外界环境，特别是外界光线环境的自我调节，提高显示效果。
本实施例可选的，所述光感测元件20还包括依次排列在所述第一电极层上方的P型非晶硅层23和第一掺杂层25，所述第一非晶硅层24设置在所述P型非晶硅层23和第一掺杂层25之间。本实施方案中，该第一掺杂层25用于降低界面电位差，从而实现类似欧姆接触层的作用，因此，本实施方式的光感测元件不产生明显的附加阻抗，而且不会使半导体内部的平衡载流子浓度发生显著的改变，使得电流与电压的关系曲线趋向于线性关系，检测精度显著提高。
本实施例可选的，开关组件10从基板起依次包括：第一金属层11、绝缘层12、第二非晶硅层13和第二掺杂层14；
所述第二掺杂层14相对设置有源极金属层15和漏极金属层16；
所述第一非晶硅层24和第二非晶硅层13在同一平面，所述第一掺杂层25和第二掺杂层14在同一平面；
所述开关组件的外层包括有钝化层17(Passivation)，所述第一非晶硅层24和第二非晶硅层13，第一掺杂层25和第二掺杂层14之间通过钝化层17进行间隔；
所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。本实施方案中，该光感测元件和开关组件的第一非晶硅层和第二非晶硅层在同一平面，第一掺杂层和第二掺杂层在同一平面，即该光感测元件和开关组件有很大一部分结构可以一起形成，只需要在两者之间形成钝化层，将其隔开即可，如此，需要被剥离的材料变少，即材料的利用率变高，而一起形成，则减少了工序，在减少生产成本的同时，提高了生产效率；其中，由于该第一电极层对开关组件中的非晶硅材料进行部分遮挡，而减少TFT开关组件光漏电的情况。
可选的，P型非晶硅层23可采用P型非晶硅(P+α-Si)、第一非晶硅层24和第二非晶硅层13可采用非晶硅(α-Si)；第一掺杂层25和第二掺杂层14可采用N型非晶硅(N+α-Si)。
本实施例可选的，所述色阻层30形成在所述钝化层17上；
所述色阻层30包括红色色阻、绿色色阻和蓝色色阻。另外，所述色阻层30上形成有像素电极。
本实施例可选的，所述色阻层30形成在所述第二电极层21上，对应覆盖所述光感测元件20；
所述色阻层30包括红色色阻、绿色色阻和蓝色色阻。本实施方案中，该阵列基板实际上利用COA技术，将色阻层形成在阵列基板上，如此，便能够利用COA工艺来调控光感测波长范围，使得该光感测元件(color sensor，或者说R/G/B-sensor)能够作为全彩影像感测器(image sensor)；另外，该色阻层可以是RGB色阻作为一个单位，对应设置有光感测元件，也可以是R色阻、G色阻和B色阻作为一个单位，对应设置有光感测元件。
本实施例可选的，所述光感测元件20与开关组件10成呈预设比例设置在所述阵列基板上。本实施方案中，该光感测元件与开关组件成比例设置，可以是一比一，一比二或者其他比例设置，只要能够实现光感测的目的即可，并将该光感测元件均匀的布设到阵列基板上，使得阵列基板的各处都能够进行外界光感测，避免感测不良而出现误判的问题发生。
本实施例可选的，每个所述开关组件10的两侧对应设置有一个光感测元件20。本实施方案中，如此设置使得每个开关组件之间都设置有光感测元件，提高光感测的正确率。
图4是本发明实施例的阵列基板的制造方法的流程图，参考图4，结合图1-3可知，本发明还公开了一种如本发明任一公开的阵列基板的制造方法，包括步骤：
S1、提供一基板；
S2、在基板上形成第一金属层和第一电极层；
S3、并在所述第一金属层上依次形成绝缘层、第二非晶硅层、第二掺杂层以及位于同一层的源极金属层和漏极金属层，以形成开关组件；
S4、在所述第一电极层上依次形成P型非晶硅层、第一非晶硅层和第一掺杂层，以形成光感测元件；
S5、在所述源极金属层、漏极金属层上形成钝化层和色阻层。
S6：在所述第一掺杂层上形成第二电极层；另外，在所述色阻层上形成像素电极。
该制造方法可以在现有的四道光罩制程(4-mask)中同步制作出光感测元件，有利于节约成本，提高生产效率。开关组件(即TFT)作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本发明中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，如此，则可以通过第一电极层对开关组件中的非晶硅材料进行遮挡，而减少TFT开关组件光漏电的情况；同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够用作遮挡光线，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而影响视觉效果。
图5是本发明实施例一种显示装置的示意图，参考图4，结合图1-图3可知，该显示装置200包括控制部件101；以及本发明所述的阵列基板100。
阵列基板上设置有开关组件，该开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本发明中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，如此，则可以通过第一电极层对开关组件中的非晶硅材料进行遮挡，而减少TFT开关组件光漏电的情况；同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够用作遮挡光线，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而影响视觉效果。
在上述实施例中，阵列基板可例如包括液晶面板、等离子面板、OLED面板、QLED面板等。可选的，上述P型非晶硅层可以采用P型掺杂非晶硅材料，上述第一掺杂层和第二掺杂层可选用N型掺杂非晶硅材料。
以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (8)

1.一种阵列基板，其特征在于，包括：
基板；
开关组件，设置在所述基板上；
像素电极，形成于所述开关组件上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在所述开关组件一侧；
色阻层，形成在所述开关组件和光感测元件上；
其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一平面的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层；
所述光感测元件还包括依次排列在所述第一电极层上方的P型非晶硅层和第一掺杂层，所述第一非晶硅层设置在所述P型非晶硅层和第一掺杂层之间；
所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；
所述第二掺杂层相对设置有源极金属层和漏极金属层；
所述第一非晶硅层和第二非晶硅层在同一平面，所述第一掺杂层和第二掺杂层在同一平面；
所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。
2.如权利要求1所述的阵列基板，其特征在于：所述第一金属层和所述第一电极层采用同一金属材料制成；
所述光感测元件的上部设置有与所述第一电极层对应的第二电极层。
3.如权利要求1所述的阵列基板，其特征在于，所述色阻层形成在所述钝化层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
4.如权利要求2所述的阵列基板，其特征在于，所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
5.如权利要求1所述的阵列基板，其特征在于，所述光感测元件与开关组件成呈预设比例设置在所述阵列基板上。
6.如权利要求5所述的阵列基板，其特征在于，每个所述开关组件的两侧对应设置有一个光感测元件。
7.一种阵列基板，其特征在于，包括：
基板，开关组件，设置在所述基板上；
像素电极，形成于所述基板上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在所述开关组件一侧；
色阻层，形成在所述开关组件和光感测元件上；
其中，所述光感测元件的第一电极层直接形成于所述基板上，且与所述第一金属层位于同一平面；
所述第一金属层和所述第一电极层采用同一金属材料制成；所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
所述光感测元件包括依次排列在所述第一电极层上方的P型非晶硅层、第一非晶硅层和第一掺杂层；
所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；
所述第二掺杂层相对设置有源极金属层和漏极金属层；所述第一非晶硅层和第二非晶硅层在同一平面，所述第一掺杂层和第二掺杂层在同一平面；所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
所述光感测元件设置在每个相邻的开关组件之间，所述色阻层形成在所述钝化层上；所述色阻层形成在所述第二电极层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻；
所述色阻层上形成有像素电极；
所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。
8.一种阵列基板的制造方法，其特征在于，包括步骤：
提供一基板；
在基板上形成第一金属层和第一电极层；
并在所述第一金属层上依次形成绝缘层、第二非晶硅层、第二掺杂层以及位于同一层的源极金属层和漏极金属层，以形成开关组件；
在所述第一电极层上依次形成P型非晶硅层、第一非晶硅层和第一掺杂层，以形成光感测元件；
在所述源极金属层、漏极金属层上形成钝化层和色阻层；
在所述第一掺杂层上形成第二电极层，在所述色阻层上形成像素电极；
其中，所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；
所述第二掺杂层相对设置有源极金属层和漏极金属层；
所述第一非晶硅层和第二非晶硅层在同一平面，所述第一掺杂层和第二掺杂层在同一平面；
所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。
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