WO2019085269A1 - 一种阵列基板和阵列基板的制造方法 - Google Patents

一种阵列基板和阵列基板的制造方法 Download PDF

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Publication number
WO2019085269A1
WO2019085269A1 PCT/CN2018/071853 CN2018071853W WO2019085269A1 WO 2019085269 A1 WO2019085269 A1 WO 2019085269A1 CN 2018071853 W CN2018071853 W CN 2018071853W WO 2019085269 A1 WO2019085269 A1 WO 2019085269A1
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layer
color resist
amorphous silicon
sensing element
electrode
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PCT/CN2018/071853
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English (en)
French (fr)
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何怀亮
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惠科股份有限公司
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Priority to US16/311,166 priority Critical patent/US11114495B2/en
Publication of WO2019085269A1 publication Critical patent/WO2019085269A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/136222—Colour filters incorporated in the active matrix substrate
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Definitions

  • the present application relates to the field of display technologies, and in particular, to a method for fabricating an array substrate and an array substrate.
  • liquid crystal displays have become the mainstream products of displays due to their thin body, low power consumption and low radiation, and have been widely used.
  • Most of the liquid crystal displays on the market are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module.
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel substrates, and apply driving voltages on the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • a thin film transistor liquid crystal display includes a liquid crystal panel including a color filter substrate (CF Substrate, also referred to as a color filter substrate), and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate). And a mask, a transparent electrode is present on the opposite inner side of the substrate. A layer of liquid crystal molecules (LC) is sandwiched between the two substrates.
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate Thin Film Transistor Substrate, TFT Substrate
  • LCD products tend to develop in the direction of high resolution, it is found that the LCD technology also has some problems to be solved.
  • existing LCD products mostly use amorphous silicon, and TFTs based on amorphous silicon exist. The light leakage of the switch assembly.
  • the technical problem to be solved by the present application is to provide an array substrate and an array substrate manufacturing method capable of reducing light leakage of a switch assembly.
  • an array substrate including:
  • the switch assembly comprises a first metal layer
  • the light sensing component is correspondingly disposed on one side of the switch component
  • a pixel electrode formed on the color resist layer and coupled to the switch component
  • the light sensing element comprises a first electrode layer directly formed on the substrate and located in the same layer as the first metal layer, and a first amorphous silicon disposed above the first electrode layer Floor.
  • the application also discloses an array substrate, comprising:
  • the switch assembly comprises a first metal layer
  • a light sensing component correspondingly disposed on a side of the switch component
  • a pixel electrode formed on the color resist layer and coupled to the switch component
  • the light sensing element comprises a first electrode layer directly formed on the substrate and located in the same layer as the first metal layer, and a first amorphous silicon disposed above the first electrode layer Floor;
  • the first metal layer and the first electrode layer are made of the same metal material; the upper portion of the light sensing element is provided with a second electrode layer corresponding to the first electrode layer;
  • the light sensing element includes a P-type amorphous silicon layer, a first amorphous silicon layer, and a first doped layer sequentially arranged above the first electrode layer;
  • the switch assembly includes, in order from the substrate, a first metal layer, an insulating layer, a second amorphous silicon layer, and a second doped layer; the second doped layer is opposite to the source metal layer and the drain metal layer.
  • the first amorphous silicon layer and the second amorphous silicon layer are in the same layer, the first doped layer and the second doped layer are in the same layer;
  • the outer layer of the switch component includes a passivation layer, The first amorphous silicon layer and the second amorphous silicon layer are separated by a passivation layer between the first doped layer and the second doped layer;
  • the light sensing element is disposed between each adjacent switch component
  • the color resist layer is formed on the passivation layer; the color resist layer is formed on the second electrode layer;
  • the color resist layer comprises a red color resist, a green color resist and a blue color resist
  • a pixel electrode is formed on the color resist layer.
  • the application provides a method for manufacturing an array substrate, comprising the steps of:
  • a light sensing element including a first amorphous silicon layer over the first electrode layer
  • a pixel electrode is formed over the color resist layer.
  • a switching component ie, a TFT
  • TFT which acts as a pixel switch
  • the first metal layer since it is always in an environment where the backlight is received, and the amorphous silicon material is irradiated with light
  • the first metal layer is etched, Depositing a portion of the first electrode layer at the edge of the switch assembly while forming a photo sensing element on the first electrode layer and having the first electrode layer as its lower electrode, such that the first electrode layer is not only
  • the utility model can block the light of the first amorphous silicon layer in the light sensing component and reduce the light leakage of the TFT, and can also be used for other purposes, thereby achieving the effect of saving two times, saving production cost, improving production efficiency and product quality;
  • the light sensing element is disposed on the array
  • the situation can be perceived as the change of the intensity of the outside light.
  • the display can automatically adjust the brightness to avoid the display being too dark and invisible; and the light is weak, and the brightness can be correspondingly Dim, to avoid the picture is too bright and glare to hurt the eyes;
  • the color resist layer is formed above the switch assembly and the light sensing element, using COA technology (ie Color Filter on Array technology), and use it with the light sensing element The combination of the color resist layer and the light sensing element can be used as a full color image sensor.
  • 1 is a schematic view of an array substrate of the present application
  • FIG. 2 is a schematic view of another array substrate of the present application.
  • FIG. 3 is a schematic structural diagram of an active switch and a pixel electrode according to an embodiment of the present application
  • Figure 5 is a schematic illustration of a display device of the present application.
  • FIG. 1 is a schematic view of an array substrate of the present application
  • FIG. 2 is a schematic view of another array substrate of the present application
  • FIG. 3 is a schematic structural view of the active switch and the pixel electrode of the embodiment of the present application, wherein the difference between FIG. 1 and FIG. The main difference is that the arrangement of the color resist layer is different.
  • the present application discloses an array substrate, including:
  • the switch assembly 10 is disposed on the substrate 40;
  • the switch assembly 10 includes a first metal layer 11;
  • the light sensing component 20 is correspondingly disposed beside the switch component 10;
  • a pixel electrode 26 is formed on the color resist layer 30 and coupled to the switch assembly 10;
  • the light sensing element 20 includes a first electrode layer 21 directly formed on the substrate and located in the same layer as the first metal layer 11 , and a first non-disposed above the first electrode layer 21 Crystalline layer 24.
  • a switching component ie, a TFT
  • TFT which acts as a pixel switch
  • the first metal layer since it is always in an environment where the backlight is received, and the amorphous silicon material is irradiated with light
  • the first metal layer is etched, Depositing a portion of the first electrode layer at the edge of the switch assembly while forming a photo sensing element on the first electrode layer and having the first electrode layer as its lower electrode, such that the first electrode layer is not only
  • the utility model can block the light of the first amorphous silicon layer in the light sensing component and reduce the light leakage of the TFT, and can also be used for other purposes, thereby achieving the effect of saving two times, saving production cost, improving production efficiency and product quality;
  • the light sensing element is disposed on the array
  • the situation can sense the change of the intensity of the outside light, so that when the light is strong, the display can automatically adjust to increase the brightness, to avoid the display is too dark and can not see clearly; and the light is weak, can also correspond
  • the brightness is dimmed to avoid the picture being too bright and glare to hurt the eyes;
  • the color resist layer is formed on the switch assembly and the light sensing element, using COA technology (ie Color Filter on Array technology), and matching it with the light sensing element
  • COA technology ie Color Filter on Array technology
  • the first electrode layer partially blocking the first amorphous silicon layer can reduce the light leakage, and completely blocking the first amorphous silicon layer can enable
  • the first metal layer 11 and the first electrode layer 21 are made of the same metal material;
  • the upper portion of the light sensing element 20 is provided with a second electrode layer 22 corresponding to the first electrode layer 21.
  • the first electrode layer and the second electrode layer respectively exist as upper and lower electrodes of the light sensing element, and the light sensing element can sense the intensity of the external light, thereby causing the first metal layer and the first
  • the electrical signals between the two electrode layers are differently changed, so that they are perceived by the display device, thereby judging the external light intensity, realizing self-adjustment of the display device to the external environment, especially the external light environment, and improving the display effect.
  • the photo sensing element 20 further includes a P-type amorphous silicon layer 23 and a first doped layer 25, which are sequentially arranged above the first electrode layer, the first amorphous silicon layer. 24 is disposed between the P-type amorphous silicon layer 23 and the first doping layer 25.
  • the first doping layer 25 is used to reduce the interface potential difference, so as to achieve an effect similar to the ohmic contact layer. Therefore, the photo sensing element of the present embodiment does not generate significant additional impedance, and does not cause the semiconductor.
  • the internal equilibrium carrier concentration changes significantly, so that the current-voltage relationship curve tends to be linear, and the detection accuracy is significantly improved.
  • the switch assembly 10 includes, in order from the substrate, a first metal layer 11, an insulating layer 12, a second amorphous silicon layer 13, and a second doped layer 14;
  • the second doping layer 14 is oppositely disposed with the source metal layer 15 and the drain metal layer 16;
  • the first amorphous silicon layer 24 and the second amorphous silicon layer 13 are in the same layer, and the first doped layer 25 and the second doped layer 14 are in the same layer;
  • the outer layer of the switch assembly includes a passivation layer 17 between the first amorphous silicon layer 24 and the second amorphous silicon layer 13, between the first doped layer 25 and the second doped layer 14. Interval through the passivation layer 17;
  • the second amorphous silicon layer overlaps the first electrode layer adjacent to an edge of the photo sensing element.
  • the first amorphous silicon layer and the second amorphous silicon layer of the photo sensing element and the switch component are in the same layer, and the first doped layer and the second doped layer are in the same layer, that is, the light sensation
  • a large part of the structure of the measuring component and the switching component can be formed together, and only a passivation layer needs to be formed between the two to separate them.
  • the material to be stripped is reduced, that is, the material utilization rate is high. Formed together, the process is reduced, and the production efficiency is improved while reducing the production cost; wherein the first electrode layer partially blocks the amorphous silicon material in the switch assembly, thereby reducing the light leakage of the TFT switch assembly Case.
  • the P-type amorphous silicon layer 23 may be made of P-type amorphous silicon (P+ ⁇ -Si), the first amorphous silicon layer 24, and the second amorphous silicon layer 13 may be amorphous silicon ( ⁇ -Si).
  • the first doping layer 25 and the second doping layer 14 may be N-type amorphous silicon (N+ ⁇ -Si).
  • the color resist layer 30 is formed on the passivation layer 17;
  • the color resist layer 30 includes a red color resist, a green color resist, and a blue color resist.
  • a pixel electrode is formed on the color resist layer 30.
  • the color resist layer 30 is formed on the second electrode layer 21, correspondingly covering the light sensing element 20;
  • the color resist layer 30 includes a red color resist, a green color resist, and a blue color resist.
  • the array substrate actually uses a COA technology to form a color resist layer on the array substrate, so that the COA process can be used to adjust the light sensing wavelength range, so that the light sensor (color sensor, or R/G/B-sensor can be used as a full-color image sensor; in addition, the color resist layer can be RGB color resistance as a unit, corresponding to a light sensing component, or R color The resistance, the G color resistance, and the B color resistance are one unit, and the light sensing elements are correspondingly disposed.
  • the light sensing component 20 and the switch component 10 are disposed on the array substrate at a preset ratio.
  • the light sensing component is disposed in proportion to the switch component, and may be one to one, one to two, or other ratios, as long as the light sensing purpose can be achieved, and the light sensing component is uniform.
  • the layout is arranged on the array substrate, so that external light sensing can be performed everywhere in the array substrate, and the problem of misjudgment caused by poor sensing is avoided.
  • a light sensing component 20 is disposed on each side of each of the switch components 10 .
  • the arrangement is such that each of the switch components is provided with a light sensing element to improve the accuracy of the light sensing.
  • FIG. 4 is a flow chart of a method for fabricating an array substrate according to an embodiment of the present application. Referring to FIG. 4, the present application also discloses a method for manufacturing an array substrate according to any one of the present application, including steps. :
  • a passivation layer and a color resist layer are formed on the source metal layer and the drain metal layer.
  • the manufacturing method can simultaneously produce the light sensing component in the existing four-mask process (4-mask), which is beneficial to cost saving and high production efficiency.
  • the switch component ie, TFT
  • the switch when the first metal layer is etched, the switch is turned on.
  • the first electrode layer at the edge of the component is retained, so that the amorphous silicon material in the switch assembly can be blocked by the first electrode layer, thereby reducing the light leakage of the TFT switch assembly; meanwhile, at the first electrode A light sensing element is formed on the layer, and the first electrode layer is used as a lower electrode thereof.
  • the first electrode layer can be used not only to block light but also to be used for other purposes, thereby achieving a double effect and saving production cost. , improving production efficiency and product quality; and the light sensing element is disposed on the array substrate, beside the switch assembly, such that the portion constituting the display area of the display
  • the light sensing component can sense the change of the environment in which it is located.
  • the display can automatically adjust to increase the brightness to avoid the display being too dark and not visible. Clear situation; while the light is weak, it can also dim the brightness to avoid the picture is too bright and glare to affect the visual effect.
  • the method for manufacturing the array substrate includes the steps of:
  • the first metal layer and the first electrode layer are formed by the same metal material through the same process.
  • the embodiment further includes forming a second electrode layer corresponding to the first electrode layer above the photo sensing element.
  • the step of forming a photo sensing element including the first amorphous silicon layer over the first electrode layer includes:
  • a P-type amorphous silicon layer, a first amorphous silicon layer, and a first doped layer are sequentially formed over the first electrode layer.
  • the step of forming a switch component on the first metal layer includes:
  • the first amorphous silicon layer and the second amorphous silicon layer are formed by the same process, and the first doped layer and the second doped layer are formed by the same process.
  • the embodiment further includes:
  • the passivation layer Forming a passivation layer on an outer layer of the switch component, the passivation layer for spacing the first amorphous silicon layer and the second amorphous silicon layer while spacing the first doped layer and the first Two doped layers.
  • the color resist layer is formed on the passivation layer
  • the color resist layer includes a red color resist, a green color resist, and a blue color resist.
  • the color resist layer is formed on the second electrode layer, and correspondingly covers the photo sensing element;
  • the color resist layer includes a red color resist, a green color resist, and a blue color resist.
  • a light sensing component is disposed on each side of each of the switch components.
  • FIG. 5 is a schematic diagram of a display device according to an embodiment of the present application.
  • the display device 200 includes a control component 101; and the array substrate 100 described in the present application.
  • a switch component is disposed on the array substrate, and the switch component (ie, TFT) functions as a pixel switch.
  • the switch component ie, TFT
  • TFT switch component
  • the switch component When a negative voltage is applied to the first metal layer, it is amorphous because it is always in the environment of receiving the backlight.
  • the silicon material When the silicon material is irradiated with light, the light leakage of the switch component may occur due to the generation of electron-hole pairs. If the light leakage of the switch component cannot be solved well, the potential cannot be maintained.
  • the first metal layer is etched, a portion of the first electrode layer at the edge of the switch assembly is retained, so that the amorphous silicon material in the switch assembly can be blocked by the first electrode layer, thereby reducing the light of the TFT switch assembly.
  • the first electrode layer can be used not only as a light blocking but also as a light Use, to achieve the effect of two things, saving production costs, improving production efficiency and product quality; and the light sensing component, placed on the array substrate, next to the switch assembly, such as Therefore, the portion constituting the display area of the display can sense the change of the environment in which the light sensing element is located, and in particular, can sense the change of the intensity of the outside light, so that when the light is strong, the display can automatically adjust and increase the brightness. To avoid the situation that the display screen is too dark and can't be seen clearly; and the light is weak, it can also dim the brightness to avoid the picture being too bright and glaring and affecting the visual effect.
  • the array substrate may include, for example, a liquid crystal panel, a plasma panel, an OLED panel, a QLED panel, or the like.
  • the P-type amorphous silicon layer may be a P-type doped amorphous silicon material
  • the first doped layer and the second doped layer may be an N-type doped amorphous silicon material.

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Abstract

一种阵列基板和阵列基板的制造方法，阵列基板包括：基板(40)；开关组件(10)，设置在基板(40)上；其中，开关组件(10)包括第一金属层(11)；光感测元件(20)，对应设置在开关组件(10)一侧；色阻层(30)，形成在开关组件(10)和光感测元件(20)上；像素电极(26)，形成于色阻层(30)上,与开关组件(10)耦接；其中，光感测元件(20)包括直接形成于基板(40)上，且与第一金属层(11)位于同一层的第一电极层(21),以及设置在第一电极层(21)上方的第一非晶硅层(24)。

Description

一种阵列基板和阵列基板的制造方法 【技术领域】
本申请涉及一种显示器技术领域，特别是涉及一种阵列基板和阵列基板的制造方法。
【背景技术】
随着科技的发展和进步，液晶显示器由于具备机身薄、省电和辐射低等热点而成为显示器的主流产品，得到了广泛应用。现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(back light module)。液晶面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含液晶面板和背光模组，液晶面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)、薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)和光罩(Mask)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal，LC)。
而随着LCD产品趋向于高解析度方向发展，人们发现该LCD技术也存在这一些亟待解决的问题，例如，现有的LCD产品多采用非晶硅，而基于非晶硅制成的TFT存在开关组件光漏电的情况。
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。
【发明内容】
有鉴于现有技术的上述缺陷，本申请所要解决的技术问题是提供一种能够减少开关组件光漏电的阵列基板和阵列基板的制造方法。
为实现上述目的，本申请提供了一种阵列基板，包括：
基板，
开关组件，设置在所述基板上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在开关组件一侧；
色阻层，形成在所述开关组件和光感测元件上；
像素电极，形成于所述色阻层上,与所述开关组件耦接；
其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一层的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层。
本申请还公开了一种阵列基板，包括：
基板，
开关组件，设置在所述基板上；
其中，所述开关组件包括第一金属层；
光感测元件，对应设置在所述开关组件一侧；
色阻层，形成在所述开关组件和光感测元件上；
像素电极，形成于所述色阻层上,与所述开关组件耦接；
其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一层的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层；
所述第一金属层和所述第一电极层采用同一金属材料制成；所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
所述光感测元件包括依次排列在所述第一电极层上方的P型非晶硅层、第一非晶硅层和第一掺杂层；
所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和 第二掺杂层；所述第二掺杂层相对设置有源极金属层和漏极金属层；所述第一非晶硅层和第二非晶硅层在同一层，所述第一掺杂层和第二掺杂层在同一层；所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
所述光感测元件设置在每个相邻的开关组件之间
所述色阻层形成在所述钝化层上；所述色阻层形成在所述第二电极层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻；
所述色阻层上形成有像素电极。
本申请提供一种阵列基板的制造方法，包括步骤：
提供一基板；
在基板上形成第一金属层和与所述第一金属层位于同一层的第一电极层；
在所述第一金属层上形成开关组件；
在所述第一电极层上方形成包括第一非晶硅层在内的光感测元件；
在所述开关机和光感测元件上方形成色阻层；
在所述色阻层上方形成像素电极。
开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本申请中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够对光感测元件中的第一非晶硅层起到遮挡光线而减少TFT光漏电的作用，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自 动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而伤眼睛；另外，将色阻层形成在开关组件和光感测元件上方，使用了COA技术(即Color Filter on Array技术)，并将其与光感测元件配合使用，使得色阻层与光感测元件的结合可以作为全彩影像感测器(image sensor)。
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。
【附图说明】
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请一种阵列基板的示意图；
图2是本申请另一种阵列基板的示意图；
图3是本申请实施例主动开关与像素电极连接的结构示意图；
图4是本申请一种阵列基板的制造方法的流程图；
图5是本申请一种显示装置的示意图。
【具体实施方式】
为了使本技术领域的人员更好地理解本申请中的技术方案，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都应当属于本申请保护的范围。
图1是本申请一种阵列基板的示意图；图2是本申请另一种阵列基板的示意图；图3是本申请实施例主动开关与像素电极连接的结构示意图，其中图1和图2的区别主要在于该色阻层的设置不同，参见图1-3，本申请公开了一种阵列基板，包括：
基板40，
开关组件10，设置在基板40上；
所述开关组件10包括第一金属层11；
光感测元件20，对应设置在开关组件10旁边；
色阻层30，形成在所述开关组件10和光感测元件20上；
像素电极26，形成于所述色阻层30上，与开关组件10耦接；
所述光感测元件20包括直接形成于所述基板上，且与所述第一金属层11位于同一层的第一电极层21,以及设置在所述第一电极层21上方的第一非晶硅层24。
开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本申请中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能 够对光感测元件中的第一非晶硅层起到遮挡光线而减少TFT光漏电的作用，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而伤眼睛；另外，将色阻层形成在开关组件和光感测元件上方，使用了COA技术(即Color Filter on Array技术)，并将其与光感测元件配合使用，使得色阻层与光感测元件的结合可以作为全彩影像感测器(image sensor)。
其中，该第一电极层部分遮挡该第一非晶硅层可以起到减少光漏电的情况，而完全遮挡该第一非晶硅层，则能够使得
本实施例可选的，所述第一金属层11和第一电极层21采用同一金属材料制成；
所述光感测元件20的上部设置有与所述第一电极层21对应的第二电极层22。
本实施方案中，该第一电极层和第二电极层分别作为该光感测元件的上下电极而存在，该光感测元件能够感知外界的光线强弱，从而使得该第一金属层和第二电极层之间的电信号发生不同的变化，从而被显示装置而感知，进而判断外界的光线强弱情况，实现显示装置对外界环境，特别是外界光线环境的自我调节，提高显示效果。
本实施例可选的，所述光感测元件20还包括依次排列在所述第一电极层上方的P型非晶硅层23和第一掺杂层25，所述第一非晶硅层24设置在所述P型非晶硅层23和第一掺杂层25之间。本实施方案中，该第一掺杂层25用于降低界面电位差，从而实现类似欧姆接触层的作用，因此，本实施方式的光感测元件不产生明显的附加阻抗，而且不会使半导体内部的平衡载流子浓度发生显著 的改变，使得电流与电压的关系曲线趋向于线性关系，检测精度显著提高。
本实施例可选的，开关组件10从基板起依次包括：第一金属层11、绝缘层12、第二非晶硅层13和第二掺杂层14；
所述第二掺杂层14相对设置有源极金属层15和漏极金属层16；
所述第一非晶硅层24和第二非晶硅层13在同一层，所述第一掺杂层25和第二掺杂层14在同一层；
所述开关组件的外层包括有钝化层17(Passivation)，所述第一非晶硅层24和第二非晶硅层13，第一掺杂层25和第二掺杂层14之间通过钝化层17进行间隔；
所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。本实施方案中，该光感测元件和开关组件的第一非晶硅层和第二非晶硅层在同一层，第一掺杂层和第二掺杂层在同一层，即该光感测元件和开关组件有很大一部分结构可以一起形成，只需要在两者之间形成钝化层，将其隔开即可，如此，需要被剥离的材料变少，即材料的利用率变高，而一起形成，则减少了工序，在减少生产成本的同时，提高了生产效率；其中，由于该第一电极层对开关组件中的非晶硅材料进行部分遮挡，而减少TFT开关组件光漏电的情况。
可选的，P型非晶硅层23可采用P型非晶硅(P+α-Si)、第一非晶硅层24和第二非晶硅层13可采用非晶硅(α-Si)；第一掺杂层25和第二掺杂层14可采用N型非晶硅(N+α-Si)。
本实施例可选的，所述色阻层30形成在所述钝化层17上；
所述色阻层30包括红色色阻、绿色色阻和蓝色色阻。另外，所述色阻层30上形成有像素电极。
本实施例可选的，所述色阻层30形成在所述第二电极层21上，对应覆盖所述光感测元件20；
所述色阻层30包括红色色阻、绿色色阻和蓝色色阻。本实施方案中，该阵列基板实际上利用COA技术，将色阻层形成在阵列基板上，如此，便能够利用 COA工艺来调控光感测波长范围，使得该光感测元件(color sensor，或者说R/G/B-sensor)能够作为全彩影像感测器(image sensor)；另外，该色阻层可以是RGB色阻作为一个单位，对应设置有光感测元件，也可以是R色阻、G色阻和B色阻作为一个单位，对应设置有光感测元件。
本实施例可选的，所述光感测元件20与开关组件10呈预设比例设置在所述阵列基板上。本实施方案中，该光感测元件与开关组件成比例设置，可以是一比一，一比二或者其他比例设置，只要能够实现光感测的目的即可，并将该光感测元件均匀的布设到阵列基板上，使得阵列基板的各处都能够进行外界光感测，避免感测不良而出现误判的问题发生。
本实施例可选的，每个所述开关组件10的两侧对应设置有一个光感测元件20。本实施方案中，如此设置使得每个开关组件之间都设置有光感测元件，提高光感测的正确率。
图4是本申请实施例的阵列基板的制造方法的流程图，参考图4，结合图1-3可知，本申请还公开了一种如本申请任一公开的阵列基板的制造方法，包括步骤：
提供一基板；
在基板上形成第一金属层和第一电极层；
并在所述第一金属层上依次形成绝缘层、第二非晶硅层、第二掺杂层以及位于同一层的源极金属层和漏极金属层，以形成开关组件；
在所述第一电极层上依次形成P型非晶硅层、第一非晶硅层和第一掺杂层，以形成光感测元件；
在所述源极金属层、漏极金属层上形成钝化层和色阻层。
在所述第一掺杂层上形成第二电极层；另外，在所述色阻层上形成像素电极。
该制造方法可以在现有的四道光罩制程(4-mask)中同步制作出光感测元件，有利于节约成本，提高生产效率。开关组件(即TFT)作为像素开关，在 第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本申请中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，如此，则可以通过第一电极层对开关组件中的非晶硅材料进行遮挡，而减少TFT开关组件光漏电的情况；同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够用作遮挡光线，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而影响视觉效果。
具体的，该阵列基板的制造方法，其中，包括步骤：
S1:提供一基板；
S2:在基板上形成第一金属层和与所述第一金属层位于同一层的第一电极层；
S3:在所述第一金属层上形成开关组件；
S4:在所述第一电极层上方形成包括第一非晶硅层在内的光感测元件；
S5:在所述开关机和光感测元件上方形成色阻层；
S6:在所述色阻层上方形成像素电极。
本实施例可选的，所述第一金属层和第一电极层通过同一道制程，采用同一种金属材料制成。
本实施例可选的，还包括在所述光感测元件的上方形成与所述第一电极层相对应的第二电极层。
本实施例可选的，所述在所述第一电极层上方形成包括第一非晶硅层在内 的光感测元件的步骤，具体包括：
在所述第一电极层的上方依次形成P型非晶硅层、第一非晶硅层和第一掺杂层。
本实施例可选的，在所述第一金属层上形成开关组件的步骤，具体包括：
在所述第一金属层的上方依次形成绝缘层、第二非晶硅层和包括相对设置的源极金属层和漏极金属层的第二掺杂层；
所述第一非晶硅层和第二非晶硅层通过同一道制程制成，所述第一掺杂层和第二掺杂层通过同一道制程制成。
本实施例可选的，还包括：
在所述开关组件的外层形成钝化层，所述钝化层用于间隔所述第一非晶硅层和第二非晶硅层，同时用于间隔所述第一掺杂层和第二掺杂层。
本实施例可选的，所述色阻层形成在所述钝化层上；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
本实施例可选的，所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
本实施例可选的，每个所述开关组件的两侧对应设置有一个光感测元件。
图5是本申请实施例一种显示装置的示意图，参考图4，结合图1-图3可知，该显示装置200包括控制部件101；以及本申请所述的阵列基板100。
阵列基板上设置有开关组件，该开关组件(即TFT)，其作为像素开关，在第一金属层施加负电压的情况下，由于其一直处在收到背光源照射的环境中，而非晶硅材料被光照射时，会因产生电子-空穴对，而造成开关组件光漏电的情况，若开关组件光漏电无法很好的解决，则会出现电位无法保持的问题；本申请中，在蚀刻出第一金属层的时候，将开关组件边缘的部分第一电极层进行了保留，如此，则可以通过第一电极层对开关组件中的非晶硅材料进行遮挡，而 减少TFT开关组件光漏电的情况；同时，在该第一电极层的上形成光感测元件，并让该第一电极层作为其下电极，如此，该第一电极层不仅能够用作遮挡光线，还用做他用，达到一举两得的效果，节约了生产成本，提高了生产效率和产品质量；而该光感测元件，设置在阵列基板上，开关组件的旁边，如此，使得构成显示器显示区域的部分能够通过该光感测元件感知其所在环境的变化情况，特别的，可以感知外界的光线强弱的变化情况，如此，光线强时，显示器可以自动调节提高亮度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，避免画面太亮刺眼而影响视觉效果。
在上述实施例中，阵列基板可例如包括液晶面板、等离子面板、OLED面板、QLED面板等。可选的，上述P型非晶硅层可以采用P型掺杂非晶硅材料，上述第一掺杂层和第二掺杂层可选用N型掺杂非晶硅材料。
以上详细描述了本申请的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本申请的构思作出诸多修改和变化。因此，凡本技术领域中技术人员依本申请的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (20)

  1. 一种阵列基板，其中，包括：
    基板；
    开关组件，设置在所述基板上；
    其中，所述开关组件包括第一金属层；
    光感测元件，对应设置在所述开关组件一侧；
    色阻层，形成在所述开关组件和光感测元件上；
    像素电极，形成于所述色阻层上,与所述开关组件耦接；
    其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一层的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层。
  2. 如权利要求1所述的阵列基板，其中：所述第一金属层和所述第一电极层采用同一金属材料制成；
    所述光感测元件的上部设置有与所述第一电极层对应的第二电极层。
  3. 如权利要求1所述的阵列基板，其中，所述光感测元件还包括依次排列在所述第一电极层上方的P型非晶硅层和第一掺杂层，所述第一非晶硅层设置在所述P型非晶硅层和第一掺杂层之间。
  4. 如权利要求3所述的阵列基板，其中，所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；
    所述第二掺杂层相对设置有源极金属层和漏极金属层；
    所述第一非晶硅层和第二非晶硅层在同一层，所述第一掺杂层和第二掺杂层在同一层；
    所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
    所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠。
  5. 如权利要求4所述的阵列基板，其中，所述色阻层形成在所述钝化层上；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
  6. 如权利要求2所述的阵列基板，其中，所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
  7. 如权利要求1所述的阵列基板，其中，所述光感测元件与开关组件呈预设比例设置在所述阵列基板上。
  8. 如权利要求7所述的阵列基板，其中，每个所述开关组件的两侧对应设置有一个光感测元件。
  9. 如权利要求1所述的阵列基板，其中，所述第一金属层和所述第一电极层采用同一金属材料制成；
    所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
    所述光感测元件还包括依次排列在所述第一电极层上方的P型非晶硅层和第一掺杂层，所述第一非晶硅层设置在所述P型非晶硅层和第一掺杂层之间；
    所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；所述第二掺杂层相对设置有源极金属层和漏极金属层；
    所述第一非晶硅层和第二非晶硅层在同一层，所述第一掺杂层和第二掺杂层在同一层；
    所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；所述第二非晶硅层靠近所述光感测元件的边缘与所述第一电极层相互重叠；
    所述色阻层形成在所述钝化层上；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
  10. 如权利要求1所述的阵列基板，其中，所述第一金属层和所述第一电极层采用同一金属材料制成；
    所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
    所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻；
    所述光感测元件与开关组件呈预设比例设置在所述阵列基板上；
    每个所述开关组件的两侧对应设置有一个光感测元件。
  11. 一种阵列基板，其中，包括：
    基板，
    开关组件，设置在所述基板上；
    其中，所述开关组件包括第一金属层；
    光感测元件，对应设置在所述开关组件一侧；
    色阻层，形成在所述开关组件和光感测元件上；
    像素电极，形成于所述色阻层上,与所述开关组件耦接；
    其中，所述光感测元件包括直接形成于所述基板上，且与所述第一金属层位于同一层的第一电极层,以及设置在所述第一电极层上方的第一非晶硅层；
    所述第一金属层和所述第一电极层采用同一金属材料制成；所述光感测元件的上部设置有与所述第一电极层对应的第二电极层；
    所述光感测元件包括依次排列在所述第一电极层上方的P型非晶硅层、第一非晶硅层和第一掺杂层；
    所述开关组件从基板起依次包括：第一金属层、绝缘层、第二非晶硅层和第二掺杂层；所述第二掺杂层相对设置有源极金属层和漏极金属层；所述第一非晶硅层和第二非晶硅层在同一层，所述第一掺杂层和第二掺杂层在同一层；所述开关组件的外层包括有钝化层，所述第一非晶硅层和第二非晶硅层，第一掺杂层和第二掺杂层之间通过钝化层进行间隔；
    所述光感测元件设置在每个相邻的开关组件之间
    所述色阻层形成在所述钝化层上；所述色阻层形成在所述第二电极层上；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻；
    所述色阻层上形成有像素电极。
  12. 一种阵列基板的制造方法，其中，包括步骤：
    提供一基板；
    在基板上形成第一金属层和与所述第一金属层位于同一层的第一电极层；
    在所述第一金属层上形成开关组件；
    在所述第一电极层上方形成包括第一非晶硅层在内的光感测元件；
    在所述开关机和光感测元件上方形成色阻层；
    在所述色阻层上方形成像素电极。
  13. 如权利要求12所述的一种阵列基板的制造方法，其中，所述第一金属层和第一电极层通过同一道制程，采用同一种金属材料制成。
  14. 如权利要求12所述的一种阵列基板的制造方法，其中，还包括在所述光感测元件的上方形成与所述第一电极层相对应的第二电极层。
  15. 如权利要求12所述的一种阵列基板的制造方法，其中，所述在所述第一电极层上方形成包括第一非晶硅层在内的光感测元件的步骤，具体包括：
    在所述第一电极层的上方依次形成P型非晶硅层、第一非晶硅层和第一掺杂层。
  16. 如权利要求15所述的一种阵列基板的制造方法，其中，在所述第一金属层上形成开关组件的步骤，具体包括：
    在所述第一金属层的上方依次形成绝缘层、第二非晶硅层和包括相对设置的源极金属层和漏极金属层的第二掺杂层；
    所述第一非晶硅层和第二非晶硅层通过同一道制程制成，所述第一掺杂层和第二掺杂层通过同一道制程制成。
  17. 如权利要求16所述的一种阵列基板的制造方法，其中，还包括：
    在所述开关组件的外层形成钝化层，所述钝化层用于间隔所述第一非晶硅层和第二非晶硅层，同时用于间隔所述第一掺杂层和第二掺杂层。
  18. 如权利要求16所述的一种阵列基板的制造方法，其中，所述色阻层形成在所述钝化层上；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
  19. 如权利要求14所述的一种阵列基板的制造方法，其中，所述色阻层形成在所述第二电极层上，对应覆盖所述光感测元件；
    所述色阻层包括红色色阻、绿色色阻和蓝色色阻。
  20. 如权利要求12所述的一种阵列基板的制造方法，其中，每个所述开关组件的两侧对应设置有一个光感测元件。
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