JP3993461B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP3993461B2
JP3993461B2 JP2002140293A JP2002140293A JP3993461B2 JP 3993461 B2 JP3993461 B2 JP 3993461B2 JP 2002140293 A JP2002140293 A JP 2002140293A JP 2002140293 A JP2002140293 A JP 2002140293A JP 3993461 B2 JP3993461 B2 JP 3993461B2
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JP
Japan
Prior art keywords
mis transistor
semiconductor chip
semiconductor
semiconductor module
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002140293A
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English (en)
Japanese (ja)
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JP2003332518A5 (OSRAM
JP2003332518A (ja
Inventor
充弘 亀田
巧一 鮫島
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002140293A priority Critical patent/JP3993461B2/ja
Priority to US10/438,106 priority patent/US6867494B2/en
Publication of JP2003332518A publication Critical patent/JP2003332518A/ja
Priority to US10/934,451 priority patent/US7259459B2/en
Publication of JP2003332518A5 publication Critical patent/JP2003332518A5/ja
Application granted granted Critical
Publication of JP3993461B2 publication Critical patent/JP3993461B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP2002140293A 2002-05-15 2002-05-15 半導体モジュール Expired - Lifetime JP3993461B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002140293A JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール
US10/438,106 US6867494B2 (en) 2002-05-15 2003-05-15 Semiconductor module
US10/934,451 US7259459B2 (en) 2002-05-15 2004-09-07 Semiconductor module and DC-DC converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002140293A JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2003332518A JP2003332518A (ja) 2003-11-21
JP2003332518A5 JP2003332518A5 (OSRAM) 2005-03-10
JP3993461B2 true JP3993461B2 (ja) 2007-10-17

Family

ID=29701205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002140293A Expired - Lifetime JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール

Country Status (2)

Country Link
US (2) US6867494B2 (OSRAM)
JP (1) JP3993461B2 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856006B2 (en) * 2002-03-28 2005-02-15 Siliconix Taiwan Ltd Encapsulation method and leadframe for leadless semiconductor packages
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
JP2006049341A (ja) 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
JP2006216940A (ja) * 2005-01-07 2006-08-17 Toshiba Corp 半導体装置
JP2007012857A (ja) 2005-06-30 2007-01-18 Renesas Technology Corp 半導体装置
US9093359B2 (en) * 2005-07-01 2015-07-28 Vishay-Siliconix Complete power management system implemented in a single surface mount package
JP5165214B2 (ja) * 2006-06-26 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US7825508B2 (en) * 2006-07-28 2010-11-02 Alpha Omega Semiconductor, Inc. Multi-die DC-DC buck power converter with efficient packaging
US7851936B2 (en) * 2008-07-16 2010-12-14 Anadarko Petroleum Corporation Water current power generation system
JP5655339B2 (ja) * 2010-03-26 2015-01-21 サンケン電気株式会社 半導体装置
TWI456738B (zh) * 2010-09-02 2014-10-11 大中積體電路股份有限公司 整合轉換器之半導體元件及其封裝結構
CN102447383B (zh) * 2010-10-08 2014-08-27 大中积体电路股份有限公司 整合转换器的半导体组件及其封装结构
JP5315378B2 (ja) * 2011-05-23 2013-10-16 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置
JP2013219306A (ja) * 2012-04-12 2013-10-24 Advanced Power Device Research Association 半導体ダイオード装置
JP6064682B2 (ja) * 2013-03-01 2017-01-25 住友電気工業株式会社 半導体装置
JP2015029040A (ja) * 2013-07-05 2015-02-12 サンケン電気株式会社 半導体モジュール、ｌｅｄ駆動装置及びｌｅｄ照明装置
CN104766920A (zh) * 2015-01-26 2015-07-08 广州华微电子有限公司 一种大功率led驱动芯片的sop8封装引线框架
DE102015107680B4 (de) * 2015-05-15 2020-07-30 Infineon Technologies Ag Integrierte Schaltung mit lateralem Feldeffekttransistor mit isoliertem Gate
JP2024516717A (ja) * 2021-05-11 2024-04-16 ローム株式会社 半導体デバイス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
JP2704342B2 (ja) 1992-04-03 1998-01-26 シャープ株式会社 半導体装置およびその製造方法
JP3022178B2 (ja) 1994-06-21 2000-03-15 日産自動車株式会社 パワーデバイスチップの実装構造
JP3172642B2 (ja) 1994-11-01 2001-06-04 シャープ株式会社 半導体装置
US5814884C1 (en) * 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
US5925910A (en) * 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
US6388319B1 (en) 1999-05-25 2002-05-14 International Rectifier Corporation Three commonly housed diverse semiconductor dice
JP4488660B2 (ja) 2000-09-11 2010-06-23 株式会社東芝 Ｍｏｓ電界効果トランジスタ
JP2002217416A (ja) 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
JP2003007843A (ja) * 2001-06-20 2003-01-10 Toshiba Corp 半導体装置
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール

Also Published As

Publication number Publication date
US20050029617A1 (en) 2005-02-10
US6867494B2 (en) 2005-03-15
US7259459B2 (en) 2007-08-21
JP2003332518A (ja) 2003-11-21
US20040026744A1 (en) 2004-02-12

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