JP3977207B2 - 電子写真感光体の製造方法 - Google Patents

電子写真感光体の製造方法 Download PDF

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Publication number
JP3977207B2
JP3977207B2 JP2002253620A JP2002253620A JP3977207B2 JP 3977207 B2 JP3977207 B2 JP 3977207B2 JP 2002253620 A JP2002253620 A JP 2002253620A JP 2002253620 A JP2002253620 A JP 2002253620A JP 3977207 B2 JP3977207 B2 JP 3977207B2
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Japan
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group
photosensitive member
electrophotographic photosensitive
formula
monomer
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Expired - Fee Related
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JP2002253620A
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English (en)
Japanese (ja)
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JP2004093801A5 (enExample
JP2004093801A (ja
Inventor
邦彦 関戸
信哲 呉
知裕 木村
博幸 田中
憲裕 菊地
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Canon Inc
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Canon Inc
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Priority to JP2002253620A priority Critical patent/JP3977207B2/ja
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JP2002253620A 2002-08-30 2002-08-30 電子写真感光体の製造方法 Expired - Fee Related JP3977207B2 (ja)

Priority Applications (1)

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JP2002253620A JP3977207B2 (ja) 2002-08-30 2002-08-30 電子写真感光体の製造方法

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JP2002253620A JP3977207B2 (ja) 2002-08-30 2002-08-30 電子写真感光体の製造方法

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JP2004093801A JP2004093801A (ja) 2004-03-25
JP2004093801A5 JP2004093801A5 (enExample) 2005-08-04
JP3977207B2 true JP3977207B2 (ja) 2007-09-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103529663A (zh) * 2012-06-29 2014-01-22 佳能株式会社 电子照相感光构件、处理盒以及电子照相设备

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005076815A2 (en) 2004-01-26 2005-08-25 Northwestern University PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES
US7371492B2 (en) * 2005-07-28 2008-05-13 Eastman Kodak Company Vinyl polymer photoconductive elements
DE102005061997A1 (de) * 2005-12-23 2007-07-05 Basf Ag Naphthalintetracarbonsäurederivate und deren Verwendung
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US7947837B2 (en) 2006-10-25 2011-05-24 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
EP2086974B1 (en) 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
CN101622253B (zh) 2007-01-08 2015-04-29 破立纪元有限公司 用于制备基于芳烃-双（二羧酰亚胺）的半导体材料的方法和用于制备它们的相关中间体
WO2008091670A2 (en) 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
JP5306681B2 (ja) * 2007-03-30 2013-10-02 富士フイルム株式会社 重合性化合物、重合体、インク組成物、印刷物及びインクジェット記録方法
JP4859239B2 (ja) * 2007-03-30 2012-01-25 キヤノン株式会社 電子写真感光体の製造方法
JP5981887B2 (ja) * 2012-06-29 2016-08-31 キヤノン株式会社 電子写真感光体、プロセスカートリッジ及び電子写真装置
US8940465B2 (en) 2012-06-29 2015-01-27 Canon Kabushiki Kaisha Electrophotographic photosensitive member, method for producing electrophotographic photosensitive member, process cartridge, electrophotographic apparatus, and imide compound
US9029054B2 (en) * 2012-06-29 2015-05-12 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
EP2680079B1 (en) 2012-06-29 2016-05-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process catridge, and electrophotographic apparatus
KR101599581B1 (ko) 2012-06-29 2016-03-03 캐논 가부시끼가이샤 전자 사진 감광체, 프로세스 카트리지 및 전자 사진 장치
CN103529662B (zh) * 2012-06-29 2016-05-18 佳能株式会社 电子照相感光构件、处理盒以及电子照相设备
US20140004456A1 (en) * 2012-06-29 2014-01-02 Canon Kabushiki Kaisha Electrophotographic photosensitive member, method for producing electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
JP6635021B2 (ja) * 2016-12-26 2020-01-22 京セラドキュメントソリューションズ株式会社 正帯電積層型電子写真感光体、プロセスカートリッジ及び画像形成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103529663A (zh) * 2012-06-29 2014-01-22 佳能株式会社 电子照相感光构件、处理盒以及电子照相设备
CN103529663B (zh) * 2012-06-29 2016-04-20 佳能株式会社 电子照相感光构件、处理盒以及电子照相设备

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JP2004093801A (ja) 2004-03-25

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