JP3969909B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3969909B2
JP3969909B2 JP27316099A JP27316099A JP3969909B2 JP 3969909 B2 JP3969909 B2 JP 3969909B2 JP 27316099 A JP27316099 A JP 27316099A JP 27316099 A JP27316099 A JP 27316099A JP 3969909 B2 JP3969909 B2 JP 3969909B2
Authority
JP
Japan
Prior art keywords
group
acid
compound
photoresist composition
positive photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27316099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001100402A5 (enExample
JP2001100402A (ja
Inventor
邦彦 児玉
健一郎 佐藤
利明 青合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP27316099A priority Critical patent/JP3969909B2/ja
Priority to KR1020000053569A priority patent/KR100685234B1/ko
Priority to US09/669,907 priority patent/US6410204B1/en
Publication of JP2001100402A publication Critical patent/JP2001100402A/ja
Publication of JP2001100402A5 publication Critical patent/JP2001100402A5/ja
Application granted granted Critical
Publication of JP3969909B2 publication Critical patent/JP3969909B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP27316099A 1999-09-27 1999-09-27 ポジ型フォトレジスト組成物 Expired - Fee Related JP3969909B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP27316099A JP3969909B2 (ja) 1999-09-27 1999-09-27 ポジ型フォトレジスト組成物
KR1020000053569A KR100685234B1 (ko) 1999-09-27 2000-09-08 포지티브형 포토레지스트 조성물 및 패턴형성방법
US09/669,907 US6410204B1 (en) 1999-09-27 2000-09-27 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27316099A JP3969909B2 (ja) 1999-09-27 1999-09-27 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2001100402A JP2001100402A (ja) 2001-04-13
JP2001100402A5 JP2001100402A5 (enExample) 2005-07-07
JP3969909B2 true JP3969909B2 (ja) 2007-09-05

Family

ID=17523944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27316099A Expired - Fee Related JP3969909B2 (ja) 1999-09-27 1999-09-27 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6410204B1 (enExample)
JP (1) JP3969909B2 (enExample)
KR (1) KR100685234B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
US6623907B2 (en) * 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
US6783912B2 (en) * 2000-02-27 2004-08-31 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR100416916B1 (ko) * 2001-05-11 2004-02-05 학교법인 한양학원 실리콘 함유 고분자 화합물 및 이를 이용한 레지스트 조성물
JP2002343860A (ja) * 2001-05-17 2002-11-29 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料
KR100481667B1 (ko) * 2001-08-07 2005-04-08 주식회사 이엔에프테크놀로지 안료분산 포토레지스트용 현상액
KR100973799B1 (ko) * 2003-01-03 2010-08-03 삼성전자주식회사 Ｍｍｎ 헤드 코터용 포토레지스트 조성물
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method
JP4474256B2 (ja) * 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP7226095B2 (ja) 2019-05-24 2023-02-21 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物、及びパターン形成方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
CH621416A5 (enExample) 1975-03-27 1981-01-30 Hoechst Ag
DE2718254C3 (de) 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2829511A1 (de) 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2829512A1 (de) 1978-07-05 1980-01-17 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2928636A1 (de) 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0617991B2 (ja) 1983-06-22 1994-03-09 富士写真フイルム株式会社 光可溶化組成物
JPS60121446A (ja) 1983-12-06 1985-06-28 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6010247A (ja) 1983-06-29 1985-01-19 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6037549A (ja) 1983-08-10 1985-02-26 Fuji Photo Film Co Ltd 光可溶化組成物
US4837124A (en) 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
EP0249139B2 (en) 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
MY103006A (en) 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JPH0421975A (ja) 1990-05-16 1992-01-24 Olympus Optical Co Ltd セクタマーク検出装置
JP3238465B2 (ja) 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH065333A (ja) 1992-06-16 1994-01-14 Fujitsu Ltd 同軸コネクタ用アース部材
JPH065332A (ja) 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 電子機器接続装置
US5679795A (en) * 1995-02-28 1997-10-21 Eastman Kodak Company Method of synthesizing dyes and precursor compounds therefor
JP3676918B2 (ja) * 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US6180316B1 (en) * 1998-01-16 2001-01-30 Jsr Corporation Radiation sensitive resin composition
US6159656A (en) * 1998-06-26 2000-12-12 Fuji Photo Film Co., Ltd. Positive photosensitive resin
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法

Also Published As

Publication number Publication date
US6410204B1 (en) 2002-06-25
KR20010030347A (ko) 2001-04-16
KR100685234B1 (ko) 2007-02-22
JP2001100402A (ja) 2001-04-13

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