KR100685234B1 - 포지티브형 포토레지스트 조성물 및 패턴형성방법 - Google Patents

포지티브형 포토레지스트 조성물 및 패턴형성방법 Download PDF

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Publication number
KR100685234B1
KR100685234B1 KR1020000053569A KR20000053569A KR100685234B1 KR 100685234 B1 KR100685234 B1 KR 100685234B1 KR 1020000053569 A KR1020000053569 A KR 1020000053569A KR 20000053569 A KR20000053569 A KR 20000053569A KR 100685234 B1 KR100685234 B1 KR 100685234B1
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KR
South Korea
Prior art keywords
group
acid
photoresist composition
compound
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000053569A
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English (en)
Korean (ko)
Other versions
KR20010030347A (ko
Inventor
사토켄이치로오
아오아이토시아키
코다마쿠니히코
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20010030347A publication Critical patent/KR20010030347A/ko
Application granted granted Critical
Publication of KR100685234B1 publication Critical patent/KR100685234B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020000053569A 1999-09-27 2000-09-08 포지티브형 포토레지스트 조성물 및 패턴형성방법 Expired - Fee Related KR100685234B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-273160 1999-09-27
JP27316099A JP3969909B2 (ja) 1999-09-27 1999-09-27 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
KR20010030347A KR20010030347A (ko) 2001-04-16
KR100685234B1 true KR100685234B1 (ko) 2007-02-22

Family

ID=17523944

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000053569A Expired - Fee Related KR100685234B1 (ko) 1999-09-27 2000-09-08 포지티브형 포토레지스트 조성물 및 패턴형성방법

Country Status (3)

Country Link
US (1) US6410204B1 (enExample)
JP (1) JP3969909B2 (enExample)
KR (1) KR100685234B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382960B1 (ko) 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
US6623907B2 (en) * 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
JP4991074B2 (ja) * 2000-02-27 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 光反応性酸発生剤およびそれを含有してなるフォトレジスト
KR100416916B1 (ko) * 2001-05-11 2004-02-05 학교법인 한양학원 실리콘 함유 고분자 화합물 및 이를 이용한 레지스트 조성물
JP2002343860A (ja) * 2001-05-17 2002-11-29 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料
KR100481667B1 (ko) * 2001-08-07 2005-04-08 주식회사 이엔에프테크놀로지 안료분산 포토레지스트용 현상액
KR100973799B1 (ko) * 2003-01-03 2010-08-03 삼성전자주식회사 Ｍｍｎ 헤드 코터용 포토레지스트 조성물
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method
JP4474256B2 (ja) * 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP7226095B2 (ja) * 2019-05-24 2023-02-21 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物、及びパターン形成方法

Citations (4)

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US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5679795A (en) * 1995-02-28 1997-10-21 Eastman Kodak Company Method of synthesizing dyes and precursor compounds therefor
US6180316B1 (en) * 1998-01-16 2001-01-30 Jsr Corporation Radiation sensitive resin composition
US6280898B1 (en) * 1998-09-25 2001-08-28 Shin-Etsu Chemical Co., Ltd. Lactone-containing compounds, polymers, resist compositions, and patterning method

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Publication number Priority date Publication date Assignee Title
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
CH621416A5 (enExample) 1975-03-27 1981-01-30 Hoechst Ag
DE2718254C3 (de) 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2829511A1 (de) 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2829512A1 (de) 1978-07-05 1980-01-17 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2928636A1 (de) 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
JPH0617991B2 (ja) 1983-06-22 1994-03-09 富士写真フイルム株式会社 光可溶化組成物
JPS6010247A (ja) 1983-06-29 1985-01-19 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6037549A (ja) 1983-08-10 1985-02-26 Fuji Photo Film Co Ltd 光可溶化組成物
JPS60121446A (ja) 1983-12-06 1985-06-28 Fuji Photo Film Co Ltd 光可溶化組成物
US4837124A (en) 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
EP0249139B2 (en) 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
MY103006A (en) 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JPH0421975A (ja) 1990-05-16 1992-01-24 Olympus Optical Co Ltd セクタマーク検出装置
JP3238465B2 (ja) 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH065333A (ja) 1992-06-16 1994-01-14 Fujitsu Ltd 同軸コネクタ用アース部材
JPH065332A (ja) 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 電子機器接続装置
JP3676918B2 (ja) * 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US6159656A (en) * 1998-06-26 2000-12-12 Fuji Photo Film Co., Ltd. Positive photosensitive resin
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5679795A (en) * 1995-02-28 1997-10-21 Eastman Kodak Company Method of synthesizing dyes and precursor compounds therefor
US6180316B1 (en) * 1998-01-16 2001-01-30 Jsr Corporation Radiation sensitive resin composition
US6280898B1 (en) * 1998-09-25 2001-08-28 Shin-Etsu Chemical Co., Ltd. Lactone-containing compounds, polymers, resist compositions, and patterning method

Also Published As

Publication number Publication date
KR20010030347A (ko) 2001-04-16
JP3969909B2 (ja) 2007-09-05
US6410204B1 (en) 2002-06-25
JP2001100402A (ja) 2001-04-13

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