JP3965868B2 - 層間絶縁膜およびマイクロレンズ - Google Patents

層間絶縁膜およびマイクロレンズ Download PDF

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Publication number
JP3965868B2
JP3965868B2 JP2000174948A JP2000174948A JP3965868B2 JP 3965868 B2 JP3965868 B2 JP 3965868B2 JP 2000174948 A JP2000174948 A JP 2000174948A JP 2000174948 A JP2000174948 A JP 2000174948A JP 3965868 B2 JP3965868 B2 JP 3965868B2
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JP
Japan
Prior art keywords
weight
radiation
compound
methyl
resin composition
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Expired - Fee Related
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JP2000174948A
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English (en)
Japanese (ja)
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JP2001354822A5 (enExample
JP2001354822A (ja
Inventor
信弘 竹内
一明 丹羽
昌之 遠藤
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JSR Corp
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JSR Corp
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Publication date
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Priority to JP2000174948A priority Critical patent/JP3965868B2/ja
Priority to TW090112109A priority patent/TW527394B/zh
Priority to KR1020010032438A priority patent/KR100757648B1/ko
Publication of JP2001354822A publication Critical patent/JP2001354822A/ja
Publication of JP2001354822A5 publication Critical patent/JP2001354822A5/ja
Application granted granted Critical
Publication of JP3965868B2 publication Critical patent/JP3965868B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36—Amides or imides
    • C08F222/40—Imides, e.g. cyclic imides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000174948A 2000-06-12 2000-06-12 層間絶縁膜およびマイクロレンズ Expired - Fee Related JP3965868B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000174948A JP3965868B2 (ja) 2000-06-12 2000-06-12 層間絶縁膜およびマイクロレンズ
TW090112109A TW527394B (en) 2000-06-12 2001-05-21 Radiation sensitive resin composition used in interlaminar insulation film and microlens, manufacture method for interlaminar insulation film and microlens, and interlaminar insulation film and microlens
KR1020010032438A KR100757648B1 (ko) 2000-06-12 2001-06-11 감방사선성 수지 조성물, 층간 절연막 및 마이크로 렌즈의제조 방법, 및 층간 절연막 및 마이크로 렌즈

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000174948A JP3965868B2 (ja) 2000-06-12 2000-06-12 層間絶縁膜およびマイクロレンズ

Publications (3)

Publication Number Publication Date
JP2001354822A JP2001354822A (ja) 2001-12-25
JP2001354822A5 JP2001354822A5 (enExample) 2004-10-28
JP3965868B2 true JP3965868B2 (ja) 2007-08-29

Family

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Family Applications (1)

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JP2000174948A Expired - Fee Related JP3965868B2 (ja) 2000-06-12 2000-06-12 層間絶縁膜およびマイクロレンズ

Country Status (3)

Country Link
JP (1) JP3965868B2 (enExample)
KR (1) KR100757648B1 (enExample)
TW (1) TW527394B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
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KR100940469B1 (ko) * 2002-04-18 2010-02-04 닛산 가가쿠 고교 가부시키 가이샤 포지티브형 감광성 수지 조성물 및 패턴형성방법
JP3733946B2 (ja) * 2002-11-19 2006-01-11 Ｊｓｒ株式会社 層間絶縁膜形成用およびマイクロレンズ形成用の感放射線性樹脂組成物
TW200510940A (en) * 2003-07-28 2005-03-16 Nissan Chemical Ind Ltd Positive type photosensitive resin composition
JP4168443B2 (ja) 2003-07-30 2008-10-22 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP4127150B2 (ja) * 2003-07-31 2008-07-30 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
TWI386714B (zh) * 2004-05-06 2013-02-21 Dongjin Semichem Co Ltd Ｔｆｔ-ｌｃｄ用層間有機絕緣膜、ｔｆｔ-ｌｃｄ用層間有機絕緣膜用丙烯酸系共聚合體樹脂及其製造方法
KR101068111B1 (ko) * 2005-01-27 2011-09-27 주식회사 동진쎄미켐 감광성 수지 조성물
KR101221468B1 (ko) * 2005-01-27 2013-01-11 주식회사 동진쎄미켐 감광성 수지 조성물
JP4677871B2 (ja) * 2005-10-03 2011-04-27 Ｊｓｒ株式会社 感放射線性樹脂組成物ならびに層間絶縁膜およびマイクロレンズの形成
JP4766268B2 (ja) * 2007-03-01 2011-09-07 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
KR101669085B1 (ko) * 2009-01-28 2016-10-25 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및, 층간 절연막 및 그의 형성 방법
KR101682937B1 (ko) 2009-04-01 2016-12-06 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 층간 절연막 및 그의 형성 방법
JP5533232B2 (ja) 2009-06-29 2014-06-25 Ｊｓｒ株式会社 ポジ型感放射線性組成物、硬化膜、層間絶縁膜、層間絶縁膜の形成方法、表示素子、及び層間絶縁膜形成用のシロキサンポリマー
WO2011024545A1 (ja) 2009-08-24 2011-03-03 日産化学工業株式会社 マイクロレンズ用感光性樹脂組成物
JP5574124B2 (ja) * 2009-09-14 2014-08-20 日産化学工業株式会社 共重合体を含有する感光性樹脂組成物
CN103229101B (zh) * 2010-11-30 2017-05-10 日产化学工业株式会社 微透镜用感光性树脂组合物
WO2012105288A1 (ja) 2011-01-31 2012-08-09 日産化学工業株式会社 マイクロレンズ形成用感光性樹脂組成物
JP5313285B2 (ja) * 2011-03-29 2013-10-09 富士フイルム株式会社 ポジ型感光性樹脂組成物、パターン作製方法、ｍｅｍｓ構造体及びその作製方法、ドライエッチング方法、ウェットエッチング方法、ｍｅｍｓシャッターデバイス、並びに、画像表示装置
WO2013146360A1 (ja) 2012-03-27 2013-10-03 日産化学工業株式会社 感光性樹脂組成物
TWI470359B (zh) 2012-09-27 2015-01-21 Chi Mei Corp 感光性樹脂組成物、保護膜及具有保護膜的元件
TWI474112B (zh) * 2012-09-27 2015-02-21 Chi Mei Corp 感光性樹脂組成物、保護膜及具有保護膜的元件
KR102006751B1 (ko) 2012-12-11 2019-08-02 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 표시 소자용 경화막, 표시 소자용 경화막의 형성 방법 및 표시 소자
JP6089743B2 (ja) * 2013-02-05 2017-03-08 Jsr株式会社 硬化膜形成用感放射線性樹脂組成物、硬化膜、その形成方法、半導体素子及び表示素子
KR102115817B1 (ko) 2013-01-16 2020-05-27 제이에스알 가부시끼가이샤 경화막 형성용 열경화성 수지 조성물, 네가티브형 감방사선성 수지 조성물, 포지티브형 감방사선성 수지 조성물, 경화막, 그의 형성 방법, 반도체 소자 및 표시 소자
KR102138141B1 (ko) 2013-02-19 2020-07-27 제이에스알 가부시끼가이샤 네거티브형 감방사선성 수지 조성물, 경화막, 경화막의 형성 방법 및 표시 소자
JP6136727B2 (ja) 2013-08-02 2017-05-31 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法及び表示素子
JP6492444B2 (ja) 2013-09-04 2019-04-03 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び電子デバイス
JP6318957B2 (ja) 2014-07-31 2018-05-09 Jsr株式会社 感放射線性樹脂組成物、硬化膜及びその形成方法、並びに表示素子
TWI557501B (zh) * 2014-12-22 2016-11-11 奇美實業股份有限公司 感光性聚矽氧烷組成物、保護膜以及具有保護膜的元件
JP6795753B2 (ja) 2015-10-30 2020-12-02 Jsr株式会社 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子
JP6750213B2 (ja) 2015-12-08 2020-09-02 Jsr株式会社 感放射線性樹脂組成物、硬化膜の形成方法、硬化膜、半導体素子及び表示素子
JP6658167B2 (ja) 2016-03-18 2020-03-04 Jsr株式会社 感放射線性樹脂組成物、硬化膜、硬化膜の形成方法及び電子デバイス
JP6607109B2 (ja) * 2016-03-22 2019-11-20 Ｊｓｒ株式会社 硬化膜、表示素子、硬化膜形成用材料及び硬化膜の形成方法
JP6939381B2 (ja) * 2016-12-01 2021-09-22 Jsr株式会社 層間絶縁膜用硬化性樹脂組成物、層間絶縁膜、表示素子、及び層間絶縁膜の形成方法
KR102658153B1 (ko) 2017-09-28 2024-04-16 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 그의 용도
KR102654731B1 (ko) 2017-09-28 2024-04-03 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 그의 용도
JP7451270B2 (ja) * 2020-04-09 2024-03-18 Jsr株式会社 感放射線性組成物の処理方法

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JPH075302A (ja) * 1993-06-15 1995-01-10 Tosoh Corp マイクロ集光レンズ形成用感光性組成物
JP3867177B2 (ja) * 1997-04-30 2007-01-10 Ｊｓｒ株式会社 カラーフィルタ用感放射線性組成物
JPH11174673A (ja) * 1997-12-17 1999-07-02 Jsr Corp 表示パネルスペーサー用感放射線性樹脂組成物

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Publication number Publication date
KR100757648B1 (ko) 2007-09-10
JP2001354822A (ja) 2001-12-25
KR20010111629A (ko) 2001-12-19
TW527394B (en) 2003-04-11

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