JP3949819B2 - 真空助成式細片除去装置 - Google Patents

真空助成式細片除去装置 Download PDF

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Publication number
JP3949819B2
JP3949819B2 JP16829898A JP16829898A JP3949819B2 JP 3949819 B2 JP3949819 B2 JP 3949819B2 JP 16829898 A JP16829898 A JP 16829898A JP 16829898 A JP16829898 A JP 16829898A JP 3949819 B2 JP3949819 B2 JP 3949819B2
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JP
Japan
Prior art keywords
vacuum
illumination area
manifold
lens element
bore
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16829898A
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English (en)
Japanese (ja)
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JPH1172430A (ja
Inventor
ダブリュー マッカロー アンドリュー
オルソン シーン
Original Assignee
エーエスエムエル ユーエス，インコーポレイテッド
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Publication of JPH1172430A publication Critical patent/JPH1172430A/ja
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Publication of JP3949819B2 publication Critical patent/JP3949819B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Measuring Cells (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP16829898A 1997-06-19 1998-06-16 真空助成式細片除去装置 Expired - Fee Related JP3949819B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/878,633 US5973764A (en) 1997-06-19 1997-06-19 Vacuum assisted debris removal system
US08/878633 1997-06-19

Publications (2)

Publication Number Publication Date
JPH1172430A JPH1172430A (ja) 1999-03-16
JP3949819B2 true JP3949819B2 (ja) 2007-07-25

Family

ID=25372463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16829898A Expired - Fee Related JP3949819B2 (ja) 1997-06-19 1998-06-16 真空助成式細片除去装置

Country Status (6)

Country Link
US (1) US5973764A (ko)
EP (1) EP0886184B1 (ko)
JP (1) JP3949819B2 (ko)
KR (1) KR100564094B1 (ko)
CA (1) CA2241125A1 (ko)
DE (1) DE69829607T2 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999027568A1 (fr) * 1997-11-21 1999-06-03 Nikon Corporation Graveur de motifs a projection et procede de sensibilisation a projection
WO2001006548A1 (fr) * 1999-07-16 2001-01-25 Nikon Corporation Procede et systeme d'exposition
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) * 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
JP2001118783A (ja) * 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW563002B (en) * 1999-11-05 2003-11-21 Asml Netherlands Bv Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method
JP4379997B2 (ja) * 2000-01-14 2009-12-09 東洋熱工業株式会社 露光装置
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
EP1279070B1 (en) * 2000-05-03 2007-10-03 ASML Holding N.V. Apparatus for providing a purged optical path in a projection photolithography system and a corresponding method
CN1227717C (zh) * 2000-11-10 2005-11-16 株式会社尼康 光学单元、曝光设备和器件制造法
JP2002158154A (ja) * 2000-11-16 2002-05-31 Canon Inc 露光装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
TWI223863B (en) * 2002-04-22 2004-11-11 Nikon Corp Support apparatus, optical apparatus, exposure apparatus and manufacturing method of device
DE10239344A1 (de) 2002-08-28 2004-03-11 Carl Zeiss Smt Ag Vorrichtung zum Abdichten einer Projektionsbelichtungsanlage
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
US20070056138A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation High volume brush cleaning apparatus
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US7947919B2 (en) 2008-03-04 2011-05-24 Universal Laser Systems, Inc. Laser-based material processing exhaust systems and methods for using such systems
DE102009016319A1 (de) * 2009-04-06 2010-10-14 Carl Zeiss Smt Ag Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage
US9259802B2 (en) 2012-07-26 2016-02-16 Electro Scientific Industries, Inc. Method and apparatus for collecting material produced by processing workpieces
WO2016027186A1 (en) * 2014-08-19 2016-02-25 Koninklijke Philips N.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
EP3295479B1 (en) * 2015-05-13 2018-09-26 Lumileds Holding B.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
CN106501929A (zh) * 2017-01-16 2017-03-15 浙江舜宇光学有限公司 镜头除尘治具
CN111736432A (zh) * 2020-06-15 2020-10-02 上海集成电路研发中心有限公司 一种阻隔光阻放气污染的装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607167A (en) * 1982-10-19 1986-08-19 Varian Associates, Inc. Charged particle beam lithography machine incorporating localized vacuum envelope
US4752668A (en) * 1986-04-28 1988-06-21 Rosenfield Michael G System for laser removal of excess material from a semiconductor wafer
US4837443A (en) * 1987-10-15 1989-06-06 The Perkin-Elmer Corporation Guard ring for a differentially pumped seal apparatus
US4818838A (en) * 1988-01-11 1989-04-04 The Perkin-Elmer Corporation Apparatus for preselecting and maintaining a fixed gap between a workpiece and a vacuum seal apparatus in particle beam lithography systems
JPH02250309A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 露光装置
JP2888353B2 (ja) * 1989-10-13 1999-05-10 東京エレクトロン株式会社 露光装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
JPH03254112A (ja) * 1990-03-05 1991-11-13 Nikon Corp 薄膜除去方法及び薄膜除去装置
JP3127511B2 (ja) * 1991-09-19 2001-01-29 株式会社日立製作所 露光装置および半導体装置の製造方法
US5359176A (en) * 1993-04-02 1994-10-25 International Business Machines Corporation Optics and environmental protection device for laser processing applications
BE1007851A3 (nl) * 1993-12-03 1995-11-07 Asml Lithography B V Belichtingseenheid met een voorziening tegen vervuiling van optische componenten en een fotolithografisch apparaat voorzien van een dergelijke belichtingseenheid.
KR200152655Y1 (ko) * 1993-12-20 1999-07-15 구본준 반도체 제조장비의 노광장치
KR200184786Y1 (ko) * 1994-11-24 2000-06-01 김영환 웨이퍼 에지 노광장치

Also Published As

Publication number Publication date
EP0886184A2 (en) 1998-12-23
KR19990007135A (ko) 1999-01-25
JPH1172430A (ja) 1999-03-16
US5973764A (en) 1999-10-26
EP0886184B1 (en) 2005-04-06
KR100564094B1 (ko) 2006-07-06
DE69829607D1 (de) 2005-05-12
DE69829607T2 (de) 2005-09-15
EP0886184A3 (en) 2000-03-29
CA2241125A1 (en) 1998-12-19

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