DE69829607D1 - Lithographisches System mit Absaugesystem zur Debris-Entsorgung - Google Patents

Lithographisches System mit Absaugesystem zur Debris-Entsorgung

Info

Publication number
DE69829607D1
DE69829607D1 DE69829607T DE69829607T DE69829607D1 DE 69829607 D1 DE69829607 D1 DE 69829607D1 DE 69829607 T DE69829607 T DE 69829607T DE 69829607 T DE69829607 T DE 69829607T DE 69829607 D1 DE69829607 D1 DE 69829607D1
Authority
DE
Germany
Prior art keywords
lithographic
debris disposal
extraction
extraction system
debris
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69829607T
Other languages
English (en)
Other versions
DE69829607T2 (de
Inventor
Andrew W Mccullough
Sean Olson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Application granted granted Critical
Publication of DE69829607D1 publication Critical patent/DE69829607D1/de
Publication of DE69829607T2 publication Critical patent/DE69829607T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Measuring Cells (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69829607T 1997-06-19 1998-06-16 Lithographisches System mit Absaugesystem zur Debris-Entsorgung Expired - Fee Related DE69829607T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/878,633 US5973764A (en) 1997-06-19 1997-06-19 Vacuum assisted debris removal system
US878633 2001-06-11

Publications (2)

Publication Number Publication Date
DE69829607D1 true DE69829607D1 (de) 2005-05-12
DE69829607T2 DE69829607T2 (de) 2005-09-15

Family

ID=25372463

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69829607T Expired - Fee Related DE69829607T2 (de) 1997-06-19 1998-06-16 Lithographisches System mit Absaugesystem zur Debris-Entsorgung

Country Status (6)

Country Link
US (1) US5973764A (de)
EP (1) EP0886184B1 (de)
JP (1) JP3949819B2 (de)
KR (1) KR100564094B1 (de)
CA (1) CA2241125A1 (de)
DE (1) DE69829607T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
AU4653999A (en) * 1999-07-16 2001-02-05 Nikon Corporation Exposure method and system
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) * 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
JP2001118783A (ja) * 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW563002B (en) * 1999-11-05 2003-11-21 Asml Netherlands Bv Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method
JP4379997B2 (ja) * 2000-01-14 2009-12-09 東洋熱工業株式会社 露光装置
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
EP1279070B1 (de) * 2000-05-03 2007-10-03 ASML Holding N.V. Apparat zur Erzeugung eines gespülten optischen Weges in einer photolithographischen Projektionsanlage sowie ein entsprechendes Verfahren
AU2002214269A1 (en) * 2000-11-10 2002-05-21 Nikon Corporation Optical device, exposure device and device manufacturing method
JP2002158154A (ja) * 2000-11-16 2002-05-31 Canon Inc 露光装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
WO2003090265A1 (fr) * 2002-04-22 2003-10-30 Nikon Corporation Appareil de support, appareil optique, appareil d'exposition a la lumiere et procede de production d'un dispositif
DE10239344A1 (de) 2002-08-28 2004-03-11 Carl Zeiss Smt Ag Vorrichtung zum Abdichten einer Projektionsbelichtungsanlage
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
US20070056138A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation High volume brush cleaning apparatus
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US7947919B2 (en) 2008-03-04 2011-05-24 Universal Laser Systems, Inc. Laser-based material processing exhaust systems and methods for using such systems
DE102009016319A1 (de) * 2009-04-06 2010-10-14 Carl Zeiss Smt Ag Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage
US9259802B2 (en) 2012-07-26 2016-02-16 Electro Scientific Industries, Inc. Method and apparatus for collecting material produced by processing workpieces
JP7071118B2 (ja) * 2014-08-19 2022-05-18 ルミレッズ ホールディング ベーフェー ダイレベルのレーザリフトオフ中の機械的損傷を減少させるサファイアコレクタ
CN107924865B (zh) * 2015-05-13 2022-03-11 亮锐控股有限公司 用于减少在管芯水平激光剥离期间机械损伤的蓝宝石收集器
CN106501929A (zh) * 2017-01-16 2017-03-15 浙江舜宇光学有限公司 镜头除尘治具
CN111736432A (zh) * 2020-06-15 2020-10-02 上海集成电路研发中心有限公司 一种阻隔光阻放气污染的装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607167A (en) * 1982-10-19 1986-08-19 Varian Associates, Inc. Charged particle beam lithography machine incorporating localized vacuum envelope
US4752668A (en) * 1986-04-28 1988-06-21 Rosenfield Michael G System for laser removal of excess material from a semiconductor wafer
US4837443A (en) * 1987-10-15 1989-06-06 The Perkin-Elmer Corporation Guard ring for a differentially pumped seal apparatus
US4818838A (en) * 1988-01-11 1989-04-04 The Perkin-Elmer Corporation Apparatus for preselecting and maintaining a fixed gap between a workpiece and a vacuum seal apparatus in particle beam lithography systems
JPH02250309A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 露光装置
JP2888353B2 (ja) * 1989-10-13 1999-05-10 東京エレクトロン株式会社 露光装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
JPH03254112A (ja) * 1990-03-05 1991-11-13 Nikon Corp 薄膜除去方法及び薄膜除去装置
JP3127511B2 (ja) * 1991-09-19 2001-01-29 株式会社日立製作所 露光装置および半導体装置の製造方法
US5359176A (en) * 1993-04-02 1994-10-25 International Business Machines Corporation Optics and environmental protection device for laser processing applications
BE1007851A3 (nl) * 1993-12-03 1995-11-07 Asml Lithography B V Belichtingseenheid met een voorziening tegen vervuiling van optische componenten en een fotolithografisch apparaat voorzien van een dergelijke belichtingseenheid.
KR200152655Y1 (ko) * 1993-12-20 1999-07-15 구본준 반도체 제조장비의 노광장치
KR200184786Y1 (ko) * 1994-11-24 2000-06-01 김영환 웨이퍼 에지 노광장치

Also Published As

Publication number Publication date
DE69829607T2 (de) 2005-09-15
JPH1172430A (ja) 1999-03-16
CA2241125A1 (en) 1998-12-19
EP0886184A3 (de) 2000-03-29
KR19990007135A (ko) 1999-01-25
JP3949819B2 (ja) 2007-07-25
KR100564094B1 (ko) 2006-07-06
EP0886184A2 (de) 1998-12-23
EP0886184B1 (de) 2005-04-06
US5973764A (en) 1999-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee