JP3939383B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP3939383B2 JP3939383B2 JP13091096A JP13091096A JP3939383B2 JP 3939383 B2 JP3939383 B2 JP 3939383B2 JP 13091096 A JP13091096 A JP 13091096A JP 13091096 A JP13091096 A JP 13091096A JP 3939383 B2 JP3939383 B2 JP 3939383B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon film
- film
- crystalline silicon
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000012535 impurity Substances 0.000 claims description 80
- 150000002500 ions Chemical class 0.000 claims description 70
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 36
- 238000000926 separation method Methods 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000002425 crystallisation Methods 0.000 claims description 17
- 230000008025 crystallization Effects 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 91
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 239000010409 thin film Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000010407 anodic oxide Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13091096A JP3939383B2 (ja) | 1996-04-27 | 1996-04-27 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13091096A JP3939383B2 (ja) | 1996-04-27 | 1996-04-27 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007054193A Division JP4216315B2 (ja) | 2007-03-05 | 2007-03-05 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH09293679A JPH09293679A (ja) | 1997-11-11 |
| JPH09293679A5 JPH09293679A5 (cg-RX-API-DMAC7.html) | 2005-07-07 |
| JP3939383B2 true JP3939383B2 (ja) | 2007-07-04 |
Family
ID=15045601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13091096A Expired - Fee Related JP3939383B2 (ja) | 1996-04-27 | 1996-04-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3939383B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006066908A (ja) * | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2005326866A (ja) * | 2005-06-08 | 2005-11-24 | Seiko Epson Corp | 表示装置、回路基板、回路基板の製造方法 |
-
1996
- 1996-04-27 JP JP13091096A patent/JP3939383B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09293679A (ja) | 1997-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3942651B2 (ja) | 半導体装置の作製方法 | |
| KR100506956B1 (ko) | 반도체장치형성방법및반도체장치제조방법 | |
| JPH09234579A (ja) | レーザー照射装置 | |
| US20020098297A1 (en) | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof | |
| JPH01187814A (ja) | 薄膜半導体装置の製造方法 | |
| JPH0439967A (ja) | 薄膜トランジスターの製造方法 | |
| JP3841910B2 (ja) | 半導体装置の作製方法 | |
| US6133076A (en) | Manufacturing method of semiconductor | |
| KR100730352B1 (ko) | 이온 도핑 장치, 이온 도핑 방법 및 반도체 장치 | |
| JP3813269B2 (ja) | レーザー照射システム | |
| US6140164A (en) | Method of manufacturing a semiconductor device | |
| JP3939383B2 (ja) | 半導体装置の作製方法 | |
| JPH098313A (ja) | 半導体装置の製造方法および液晶表示装置の製造方法 | |
| US5963823A (en) | Manufacturing method of thin film semiconductor device | |
| JPH09139381A (ja) | プラズマｃｖｄ法 | |
| JP4216315B2 (ja) | 半導体装置の作製方法 | |
| JP4001649B2 (ja) | 半導体装置の作製方法 | |
| JP3084159B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPH1012890A (ja) | 薄膜半導体装置の製造方法 | |
| JPH0786603A (ja) | 半導体膜の製造方法 | |
| JP2753018B2 (ja) | 薄膜トランジスターの製造方法 | |
| JP3986544B2 (ja) | 半導体の作製方法 | |
| JPH08293468A (ja) | 半導体の作製方法 | |
| JPH08306639A (ja) | ドーピング方法 | |
| JPH08293279A (ja) | 非質量分離型イオン注入装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041110 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061205 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070129 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070227 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070305 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070327 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070328 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100406 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100406 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110406 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110406 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120406 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140406 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |