JP3937721B2 - 電気光学装置及びその製造方法並びにプロジェクタ - Google Patents
電気光学装置及びその製造方法並びにプロジェクタ Download PDFInfo
- Publication number
- JP3937721B2 JP3937721B2 JP2000354544A JP2000354544A JP3937721B2 JP 3937721 B2 JP3937721 B2 JP 3937721B2 JP 2000354544 A JP2000354544 A JP 2000354544A JP 2000354544 A JP2000354544 A JP 2000354544A JP 3937721 B2 JP3937721 B2 JP 3937721B2
- Authority
- JP
- Japan
- Prior art keywords
- electro
- optical device
- film
- light
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims description 291
- 239000000758 substrate Substances 0.000 claims description 114
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 33
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 73
- 239000003990 capacitor Substances 0.000 description 51
- 239000011229 interlayer Substances 0.000 description 45
- 230000008569 process Effects 0.000 description 20
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 238000005530 etching Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000003870 refractory metal Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- -1 NSG Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354544A JP3937721B2 (ja) | 2000-11-21 | 2000-11-21 | 電気光学装置及びその製造方法並びにプロジェクタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354544A JP3937721B2 (ja) | 2000-11-21 | 2000-11-21 | 電気光学装置及びその製造方法並びにプロジェクタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002158360A JP2002158360A (ja) | 2002-05-31 |
| JP2002158360A5 JP2002158360A5 (https=) | 2004-12-24 |
| JP3937721B2 true JP3937721B2 (ja) | 2007-06-27 |
Family
ID=18827110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000354544A Expired - Fee Related JP3937721B2 (ja) | 2000-11-21 | 2000-11-21 | 電気光学装置及びその製造方法並びにプロジェクタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3937721B2 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4692699B2 (ja) * | 2000-12-07 | 2011-06-01 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置 |
| JP4214741B2 (ja) * | 2002-08-27 | 2009-01-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4021392B2 (ja) | 2002-10-31 | 2007-12-12 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3870941B2 (ja) | 2002-10-31 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3791517B2 (ja) | 2002-10-31 | 2006-06-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4045226B2 (ja) * | 2002-10-31 | 2008-02-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP2005338746A (ja) * | 2003-11-13 | 2005-12-08 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置、並びにこれを備えた電子機器 |
| JP4561173B2 (ja) * | 2004-05-11 | 2010-10-13 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
| JP4349406B2 (ja) | 2006-08-24 | 2009-10-21 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP5034529B2 (ja) * | 2007-02-01 | 2012-09-26 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP5428141B2 (ja) * | 2007-09-11 | 2014-02-26 | セイコーエプソン株式会社 | 電気光学装置、及びこれを備えた電子機器 |
| JP4730407B2 (ja) * | 2008-07-17 | 2011-07-20 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP6402999B2 (ja) * | 2014-11-06 | 2018-10-10 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、電子機器 |
| JP2016177230A (ja) * | 2015-03-23 | 2016-10-06 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
-
2000
- 2000-11-21 JP JP2000354544A patent/JP3937721B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002158360A (ja) | 2002-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3736461B2 (ja) | 電気光学装置、投射型表示装置及び電気光学装置の製造方法 | |
| KR100484343B1 (ko) | 전기 광학 장치 | |
| JP3381718B2 (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
| JP3731447B2 (ja) | 電気光学装置及びその製造方法 | |
| KR100564510B1 (ko) | 전기 광학 장치 및 그 제조 방법 및 전자 기기 | |
| JP3424234B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3873610B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JPWO2000033285A1 (ja) | 電気光学装置及びその製造方法 | |
| JP4599655B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP2004226954A (ja) | 電気光学装置及びその製造方法、並びに電子機器 | |
| JP3937721B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JP3711781B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3743273B2 (ja) | 電気光学装置の製造方法 | |
| JP3743291B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3931547B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3791338B2 (ja) | 電気光学装置及びその製造方法並びに投射型表示装置 | |
| JP3830361B2 (ja) | Ｔｆｔアレイ基板、電気光学装置及び投射型表示装置 | |
| JP3799943B2 (ja) | 電気光学装置およびプロジェクタ | |
| KR20040055688A (ko) | 전기 광학 기판의 제조 방법, 전기 광학 장치의 제조방법, 전기 광학 장치 | |
| JP4019600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP2007179077A (ja) | 電気光学装置及びプロジェクタ | |
| JP3932835B2 (ja) | Ｔｆｔアレイ基板、電気光学装置及び電子機器 | |
| JP3982183B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4023107B2 (ja) | 電気光学装置及びこれを具備する電子機器 | |
| JP3736330B2 (ja) | 電気光学装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040119 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040119 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050616 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050621 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050722 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060314 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060512 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061219 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070207 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070306 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070319 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110406 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110406 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120406 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130406 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140406 Year of fee payment: 7 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |