JP3895326B2 - 酸化剤の分圧の制御による熱酸化プロセス制御 - Google Patents

酸化剤の分圧の制御による熱酸化プロセス制御 Download PDF

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Publication number
JP3895326B2
JP3895326B2 JP2003507877A JP2003507877A JP3895326B2 JP 3895326 B2 JP3895326 B2 JP 3895326B2 JP 2003507877 A JP2003507877 A JP 2003507877A JP 2003507877 A JP2003507877 A JP 2003507877A JP 3895326 B2 JP3895326 B2 JP 3895326B2
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reaction chamber
oxygen
gas
partial pressure
oxide layer
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JP2003507877A
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Japanese (ja)
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JP2004531079A (ja
JP2004531079A5 (https=
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トグネッティ，マルセル
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Infineon Technologies AG
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Infineon Technologies AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP2003507877A 2001-06-22 2002-06-21 酸化剤の分圧の制御による熱酸化プロセス制御 Expired - Fee Related JP3895326B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01115213A EP1271636A1 (en) 2001-06-22 2001-06-22 Thermal oxidation process control by controlling oxidation agent partial pressure
PCT/EP2002/006908 WO2003001580A1 (en) 2001-06-22 2002-06-21 Thermal oxidation process control by controlling oxidation agent partial pressure

Publications (3)

Publication Number Publication Date
JP2004531079A JP2004531079A (ja) 2004-10-07
JP2004531079A5 JP2004531079A5 (https=) 2005-09-02
JP3895326B2 true JP3895326B2 (ja) 2007-03-22

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Family Applications (1)

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JP2003507877A Expired - Fee Related JP3895326B2 (ja) 2001-06-22 2002-06-21 酸化剤の分圧の制御による熱酸化プロセス制御

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Country Link
US (1) US20040219800A1 (https=)
EP (1) EP1271636A1 (https=)
JP (1) JP3895326B2 (https=)
WO (1) WO2003001580A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
WO2008133752A2 (en) * 2006-12-18 2008-11-06 President And Fellows Of Harvard College Nanoscale oxide coatings
JP5792972B2 (ja) * 2011-03-22 2015-10-14 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
TW202321493A (zh) 2017-12-20 2023-06-01 美商應用材料股份有限公司 金屬薄膜之高壓氧化
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060730A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製造法
JP3202401B2 (ja) * 1993-03-26 2001-08-27 株式会社リコー Ｍｏｓ型半導体装置におけるゲート酸化膜の製造方法
JPH0774166A (ja) * 1993-09-02 1995-03-17 Seiko Epson Corp 熱処理装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
US6372663B1 (en) * 2000-01-13 2002-04-16 Taiwan Semiconductor Manufacturing Company, Ltd Dual-stage wet oxidation process utilizing varying H2/O2 ratios
JP2001274154A (ja) * 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法

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Publication number Publication date
JP2004531079A (ja) 2004-10-07
EP1271636A1 (en) 2003-01-02
WO2003001580A1 (en) 2003-01-03
US20040219800A1 (en) 2004-11-04

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