JP3895326B2 - 酸化剤の分圧の制御による熱酸化プロセス制御 - Google Patents
酸化剤の分圧の制御による熱酸化プロセス制御 Download PDFInfo
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- JP3895326B2 JP3895326B2 JP2003507877A JP2003507877A JP3895326B2 JP 3895326 B2 JP3895326 B2 JP 3895326B2 JP 2003507877 A JP2003507877 A JP 2003507877A JP 2003507877 A JP2003507877 A JP 2003507877A JP 3895326 B2 JP3895326 B2 JP 3895326B2
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- 238000000034 method Methods 0.000 title claims description 28
- 230000001590 oxidative effect Effects 0.000 title claims description 17
- 238000007254 oxidation reaction Methods 0.000 title description 18
- 230000003647 oxidation Effects 0.000 title description 13
- 239000007800 oxidant agent Substances 0.000 title description 9
- 238000006243 chemical reaction Methods 0.000 claims description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 239000003054 catalyst Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012533 medium component Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (5)
- 基板(3)に酸化物層を形成するための方法であって、
この基板(3)を反応室(1)に配置しており、
この反応室は、
扉口(2)と、
反応室(1)に、酸素分子、水蒸気、不活性ガス、および触媒を含む酸化媒体を供給するための供給手段(6、7、8、9、14、15)と、
反応室(1)への酸化媒体の供給を制御するための制御手段(19)と、
反応室(1)から排気ガスを除去するための排気装置(16)と、
排気ガス中の酸素分圧を測定するための検出部(17、18)とを備えており、
上記酸化物層の形成中に、制御手段が、供給手段による上記反応室(1)への不活性ガスの供給量を制御することで排気ガス中の酸素分圧を一定に保つと共に、上記反応室(1)へ供給される酸化媒体中の酸素:水蒸気:触媒のモル比率を一定とし、
上記反応室(1)に、不活性ガスを上記反応室(1)の扉口(2)の外側の密封部分に噴霧し、該不活性ガスが上記反応室(1)と扉口(2)の縁との間の漏れ口(5)から反応室(1)の内部に漏入することによって二次供給(4)を行い、この二次供給(4)によってこの反応室(1)に不活性ガスを供給する工程を有している方法。 - 基板材料を酸化することによって、上記酸化物層を形成する工程を有している請求項1に記載の方法。
- 上記基板はシリコンウェハーである請求項1または2に記載の方法。
- 上記反応は炉の中で行われ、酸化物層の形成を高温で行う工程を有している請求項1〜3のいずれか1項に記載の方法。
- 上記反応室内のガス圧の合計を測定するための検出部を備え、
上記反応室内の圧力の合計に排気ガス中の酸素濃度を乗じることによって、上記酸素分圧を算出する工程を有している請求項1〜4のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01115213A EP1271636A1 (en) | 2001-06-22 | 2001-06-22 | Thermal oxidation process control by controlling oxidation agent partial pressure |
PCT/EP2002/006908 WO2003001580A1 (en) | 2001-06-22 | 2002-06-21 | Thermal oxidation process control by controlling oxidation agent partial pressure |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004531079A JP2004531079A (ja) | 2004-10-07 |
JP2004531079A5 JP2004531079A5 (ja) | 2005-09-02 |
JP3895326B2 true JP3895326B2 (ja) | 2007-03-22 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2003507877A Expired - Fee Related JP3895326B2 (ja) | 2001-06-22 | 2002-06-21 | 酸化剤の分圧の制御による熱酸化プロセス制御 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040219800A1 (ja) |
EP (1) | EP1271636A1 (ja) |
JP (1) | JP3895326B2 (ja) |
WO (1) | WO2003001580A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7727904B2 (en) | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
WO2008133752A2 (en) * | 2006-12-18 | 2008-11-06 | President And Fellows Of Harvard College | Nanoscale oxide coatings |
JP5792972B2 (ja) * | 2011-03-22 | 2015-10-14 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US9984894B2 (en) | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
JP7190450B2 (ja) | 2017-06-02 | 2022-12-15 | アプライド マテリアルズ インコーポレイテッド | 炭化ホウ素ハードマスクのドライストリッピング |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
CN117936420A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
KR102622303B1 (ko) | 2017-11-16 | 2024-01-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 스팀 어닐링 프로세싱 장치 |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
TW202321493A (zh) * | 2017-12-20 | 2023-06-01 | 美商應用材料股份有限公司 | 金屬薄膜之高壓氧化 |
KR102649241B1 (ko) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 어닐링을 사용한 심 힐링 |
EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
KR102528076B1 (ko) | 2018-10-30 | 2023-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 구조를 식각하기 위한 방법들 |
JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060730A (ja) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | 半導体装置の製造法 |
JP3202401B2 (ja) * | 1993-03-26 | 2001-08-27 | 株式会社リコー | Mos型半導体装置におけるゲート酸化膜の製造方法 |
JPH0774166A (ja) * | 1993-09-02 | 1995-03-17 | Seiko Epson Corp | 熱処理装置 |
JPH08172084A (ja) * | 1994-12-19 | 1996-07-02 | Kokusai Electric Co Ltd | 半導体成膜方法及びその装置 |
US6106676A (en) * | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
US6372663B1 (en) * | 2000-01-13 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Dual-stage wet oxidation process utilizing varying H2/O2 ratios |
JP2001274154A (ja) * | 2000-01-18 | 2001-10-05 | Applied Materials Inc | 成膜方法、成膜装置、半導体装置及びその製造方法 |
-
2001
- 2001-06-22 EP EP01115213A patent/EP1271636A1/en not_active Withdrawn
-
2002
- 2002-06-21 US US10/481,426 patent/US20040219800A1/en not_active Abandoned
- 2002-06-21 WO PCT/EP2002/006908 patent/WO2003001580A1/en active Application Filing
- 2002-06-21 JP JP2003507877A patent/JP3895326B2/ja not_active Expired - Fee Related
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US20040219800A1 (en) | 2004-11-04 |
JP2004531079A (ja) | 2004-10-07 |
WO2003001580A1 (en) | 2003-01-03 |
EP1271636A1 (en) | 2003-01-02 |
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