JP3848620B2 - 不揮発性受動マトリックス装置および同装置の読み出し方法 - Google Patents

不揮発性受動マトリックス装置および同装置の読み出し方法 Download PDF

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Publication number
JP3848620B2
JP3848620B2 JP2002529782A JP2002529782A JP3848620B2 JP 3848620 B2 JP3848620 B2 JP 3848620B2 JP 2002529782 A JP2002529782 A JP 2002529782A JP 2002529782 A JP2002529782 A JP 2002529782A JP 3848620 B2 JP3848620 B2 JP 3848620B2
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segment
passive matrix
memory
storage device
word line
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Japanese (ja)
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JP2004510283A5 (enExample
JP2004510283A (ja
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トンプソン、マイケル
ウォマック、リチャード
グスタフソン、ゲーラン
カールソン、ヨハン
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シン フイルム エレクトロニクス エイエスエイ
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Read Only Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Peptides Or Proteins (AREA)
  • Magnetic Record Carriers (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP2002529782A 2000-08-24 2001-08-24 不揮発性受動マトリックス装置および同装置の読み出し方法 Expired - Fee Related JP3848620B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20004236A NO20004236L (no) 2000-08-24 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme
PCT/NO2001/000348 WO2002025665A2 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same

Publications (3)

Publication Number Publication Date
JP2004510283A JP2004510283A (ja) 2004-04-02
JP2004510283A5 JP2004510283A5 (enExample) 2006-06-29
JP3848620B2 true JP3848620B2 (ja) 2006-11-22

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ID=19911499

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JP2002529782A Expired - Fee Related JP3848620B2 (ja) 2000-08-24 2001-08-24 不揮発性受動マトリックス装置および同装置の読み出し方法

Country Status (14)

Country Link
US (1) US20030137865A1 (enExample)
EP (1) EP1316090B1 (enExample)
JP (1) JP3848620B2 (enExample)
KR (1) KR100540266B1 (enExample)
CN (1) CN100530420C (enExample)
AT (1) ATE290711T1 (enExample)
AU (2) AU2315902A (enExample)
CA (1) CA2420378C (enExample)
DE (1) DE60109307T2 (enExample)
DK (1) DK1316090T3 (enExample)
ES (1) ES2238053T3 (enExample)
NO (1) NO20004236L (enExample)
RU (1) RU2245584C2 (enExample)
WO (1) WO2002025665A2 (enExample)

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US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
NO314524B1 (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten
US6996652B1 (en) * 2002-09-19 2006-02-07 Inapac Technology, Inc. High-speed segmented data bus architecture
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
KR100576484B1 (ko) * 2003-12-09 2006-05-10 주식회사 하이닉스반도체 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치
NO324029B1 (no) * 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
CN100466036C (zh) * 2005-06-30 2009-03-04 精工爱普生株式会社 显示装置及电子设备
TWI260643B (en) 2005-12-30 2006-08-21 Ind Tech Res Inst Organic memory
CN100524519C (zh) * 2005-12-31 2009-08-05 财团法人工业技术研究院 有机存储器
CN1996486B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 数字感测电路
CN1996495B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 有机存储器之位单元
ES2301344B1 (es) * 2006-03-14 2009-05-01 Universidad De Zaragoza Sistema de comunicaciones digitales para entornos residenciales, asistenciales, oficinas y similares.
EP1944763A1 (en) * 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
US9574326B2 (en) 2012-08-02 2017-02-21 Harnischfeger Technologies, Inc. Depth-related help functions for a shovel training simulator
AU2014202349A1 (en) 2012-08-02 2014-05-22 Harnischfeger Technologies, Inc. Depth-related help functions for a wheel loader training simulator
JP5714681B2 (ja) * 2013-10-25 2015-05-07 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9773553B1 (en) * 2016-08-19 2017-09-26 Micron Technology, Inc. Segmented memory and operation
WO2018069359A1 (de) 2016-10-10 2018-04-19 Demasius Kai Uwe Kapazitive matrixanordnung und verfahren zu deren ansteuerung
DE102016012071A1 (de) 2016-10-10 2018-04-12 Kai-Uwe Demasius Matrix mit kapazitiver Steuerungsvorrichtung
US11102437B2 (en) 2018-11-20 2021-08-24 Samsung Electronics Co., Ltd. Memory circuit and semiconductor device
JP2020088497A (ja) * 2018-11-20 2020-06-04 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． メモリ回路、半導体装置および移動体デバイス
US12407532B2 (en) * 2020-02-18 2025-09-02 International Business Machines Corporation Gain cell memory based physically unclonable function
KR20210143612A (ko) * 2020-05-20 2021-11-29 삼성전자주식회사 비휘발성 메모리 및 비휘발성 메모리의 동작 방법
CN111696602A (zh) * 2020-05-22 2020-09-22 珠海拍字节信息科技有限公司 铁电存储器及其操作方法
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
CN114093398A (zh) * 2021-11-26 2022-02-25 无锡拍字节科技有限公司 一种铁电存储器的位线布局及铁电存储器

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SU1596392A1 (ru) * 1987-10-23 1990-09-30 Предприятие П/Я Х-5737 Матричный накопитель и способ управлени записью, считыванием и стиранием информации в накопителе
DE68923573T2 (de) * 1988-03-31 1996-01-18 Sony Corp Eingangsschaltungen.
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
KR950011965B1 (ko) * 1992-02-19 1995-10-12 삼성전자주식회사 불휘발성 반도체 메모리 장치
TW231343B (enExample) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5337414A (en) * 1992-09-22 1994-08-09 Unisys Corporation Mass data storage and retrieval system
US5424997A (en) * 1994-03-15 1995-06-13 National Semiconductor Corporation Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
US5574692A (en) * 1995-06-07 1996-11-12 Lsi Logic Corporation Memory testing apparatus for microelectronic integrated circuit
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory

Also Published As

Publication number Publication date
EP1316090B1 (en) 2005-03-09
KR20030059110A (ko) 2003-07-07
RU2245584C2 (ru) 2005-01-27
ATE290711T1 (de) 2005-03-15
AU2002223159B2 (en) 2005-04-14
ES2238053T3 (es) 2005-08-16
CA2420378A1 (en) 2002-03-28
CN100530420C (zh) 2009-08-19
EP1316090A2 (en) 2003-06-04
AU2315902A (en) 2002-04-02
CA2420378C (en) 2006-05-09
NO20004236D0 (no) 2000-08-24
WO2002025665A2 (en) 2002-03-28
DE60109307D1 (de) 2005-04-14
DE60109307T2 (de) 2006-04-13
US20030137865A1 (en) 2003-07-24
NO20004236L (no) 2002-02-25
CN1471712A (zh) 2004-01-28
DK1316090T3 (da) 2005-05-30
JP2004510283A (ja) 2004-04-02
WO2002025665A3 (en) 2002-05-16
KR100540266B1 (ko) 2006-01-10

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