ES2238053T3 - Matriz pasiva no volatil y metodo para la lectura de la misma. - Google Patents
Matriz pasiva no volatil y metodo para la lectura de la misma.Info
- Publication number
- ES2238053T3 ES2238053T3 ES01985301T ES01985301T ES2238053T3 ES 2238053 T3 ES2238053 T3 ES 2238053T3 ES 01985301 T ES01985301 T ES 01985301T ES 01985301 T ES01985301 T ES 01985301T ES 2238053 T3 ES2238053 T3 ES 2238053T3
- Authority
- ES
- Spain
- Prior art keywords
- memory
- segment
- cell
- lines
- bit lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 20
- 230000015654 memory Effects 0.000 claims abstract description 192
- 230000010287 polarization Effects 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- 238000013500 data storage Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 16
- 230000008901 benefit Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 208000000044 Amnesia Diseases 0.000 description 2
- 241001425718 Vagrans egista Species 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 231100000863 loss of memory Toxicity 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Magnetic Record Carriers (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Peptides Or Proteins (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20004236A NO20004236L (no) | 2000-08-24 | 2000-08-24 | Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme |
| NO20004236 | 2000-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2238053T3 true ES2238053T3 (es) | 2005-08-16 |
Family
ID=19911499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES01985301T Expired - Lifetime ES2238053T3 (es) | 2000-08-24 | 2001-08-24 | Matriz pasiva no volatil y metodo para la lectura de la misma. |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US20030137865A1 (enExample) |
| EP (1) | EP1316090B1 (enExample) |
| JP (1) | JP3848620B2 (enExample) |
| KR (1) | KR100540266B1 (enExample) |
| CN (1) | CN100530420C (enExample) |
| AT (1) | ATE290711T1 (enExample) |
| AU (2) | AU2002223159B2 (enExample) |
| CA (1) | CA2420378C (enExample) |
| DE (1) | DE60109307T2 (enExample) |
| DK (1) | DK1316090T3 (enExample) |
| ES (1) | ES2238053T3 (enExample) |
| NO (1) | NO20004236L (enExample) |
| RU (1) | RU2245584C2 (enExample) |
| WO (1) | WO2002025665A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| NO314524B1 (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten |
| US6996652B1 (en) * | 2002-09-19 | 2006-02-07 | Inapac Technology, Inc. | High-speed segmented data bus architecture |
| NO324607B1 (no) * | 2003-11-24 | 2007-11-26 | Thin Film Electronics Asa | Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering |
| KR100576484B1 (ko) * | 2003-12-09 | 2006-05-10 | 주식회사 하이닉스반도체 | 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치 |
| NO324029B1 (no) * | 2004-09-23 | 2007-07-30 | Thin Film Electronics Asa | Lesemetode og deteksjonsanordning |
| CN100466036C (zh) * | 2005-06-30 | 2009-03-04 | 精工爱普生株式会社 | 显示装置及电子设备 |
| TWI260643B (en) | 2005-12-30 | 2006-08-21 | Ind Tech Res Inst | Organic memory |
| CN1996495B (zh) * | 2005-12-31 | 2010-11-03 | 财团法人工业技术研究院 | 有机存储器之位单元 |
| CN1996486B (zh) * | 2005-12-31 | 2010-11-03 | 财团法人工业技术研究院 | 数字感测电路 |
| CN100524519C (zh) * | 2005-12-31 | 2009-08-05 | 财团法人工业技术研究院 | 有机存储器 |
| ES2301344B1 (es) * | 2006-03-14 | 2009-05-01 | Universidad De Zaragoza | Sistema de comunicaciones digitales para entornos residenciales, asistenciales, oficinas y similares. |
| EP1944763A1 (en) * | 2007-01-12 | 2008-07-16 | STMicroelectronics S.r.l. | Reading circuit and method for data storage system |
| US9574326B2 (en) | 2012-08-02 | 2017-02-21 | Harnischfeger Technologies, Inc. | Depth-related help functions for a shovel training simulator |
| AU2014202349A1 (en) | 2012-08-02 | 2014-05-22 | Harnischfeger Technologies, Inc. | Depth-related help functions for a wheel loader training simulator |
| JP5714681B2 (ja) * | 2013-10-25 | 2015-05-07 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| US9773553B1 (en) * | 2016-08-19 | 2017-09-26 | Micron Technology, Inc. | Segmented memory and operation |
| DE102016012071A1 (de) | 2016-10-10 | 2018-04-12 | Kai-Uwe Demasius | Matrix mit kapazitiver Steuerungsvorrichtung |
| US10504575B2 (en) | 2016-10-10 | 2019-12-10 | Kai-Uwe Demasius | Capacitive matrix arrangement and method for actuation thereof |
| JP2020088497A (ja) * | 2018-11-20 | 2020-06-04 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | メモリ回路、半導体装置および移動体デバイス |
| US11102437B2 (en) | 2018-11-20 | 2021-08-24 | Samsung Electronics Co., Ltd. | Memory circuit and semiconductor device |
| US12407532B2 (en) * | 2020-02-18 | 2025-09-02 | International Business Machines Corporation | Gain cell memory based physically unclonable function |
| KR20210143612A (ko) * | 2020-05-20 | 2021-11-29 | 삼성전자주식회사 | 비휘발성 메모리 및 비휘발성 메모리의 동작 방법 |
| CN111696602A (zh) * | 2020-05-22 | 2020-09-22 | 珠海拍字节信息科技有限公司 | 铁电存储器及其操作方法 |
| US11309034B2 (en) * | 2020-07-15 | 2022-04-19 | Ferroelectric Memory Gmbh | Memory cell arrangement and methods thereof |
| CN114093398A (zh) * | 2021-11-26 | 2022-02-25 | 无锡拍字节科技有限公司 | 一种铁电存储器的位线布局及铁电存储器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4599709A (en) * | 1984-02-17 | 1986-07-08 | At&T Bell Laboratories | Byte organized static memory |
| SU1378682A1 (ru) * | 1986-05-18 | 1994-12-30 | В.И. Овчаренко | Матричный накопитель для постоянного запоминающего устройства |
| SU1596392A1 (ru) * | 1987-10-23 | 1990-09-30 | Предприятие П/Я Х-5737 | Матричный накопитель и способ управлени записью, считыванием и стиранием информации в накопителе |
| DE68923573T2 (de) * | 1988-03-31 | 1996-01-18 | Sony Corp | Eingangsschaltungen. |
| JP2982905B2 (ja) * | 1989-10-02 | 1999-11-29 | 三菱電機株式会社 | ダイナミック型半導体記憶装置 |
| US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
| KR950011965B1 (ko) * | 1992-02-19 | 1995-10-12 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
| TW231343B (enExample) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
| JPH0677434A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 半導体記憶装置 |
| US5337414A (en) * | 1992-09-22 | 1994-08-09 | Unisys Corporation | Mass data storage and retrieval system |
| US5424997A (en) * | 1994-03-15 | 1995-06-13 | National Semiconductor Corporation | Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof |
| US5567636A (en) * | 1995-02-27 | 1996-10-22 | Motorola Inc. | Process for forming a nonvolatile random access memory array |
| US5574692A (en) * | 1995-06-07 | 1996-11-12 | Lsi Logic Corporation | Memory testing apparatus for microelectronic integrated circuit |
| US5969380A (en) * | 1996-06-07 | 1999-10-19 | Micron Technology, Inc. | Three dimensional ferroelectric memory |
-
2000
- 2000-08-24 NO NO20004236A patent/NO20004236L/no not_active Application Discontinuation
-
2001
- 2001-08-24 AU AU2002223159A patent/AU2002223159B2/en not_active Ceased
- 2001-08-24 RU RU2003108726/09A patent/RU2245584C2/ru not_active IP Right Cessation
- 2001-08-24 DK DK01985301T patent/DK1316090T3/da active
- 2001-08-24 AT AT01985301T patent/ATE290711T1/de not_active IP Right Cessation
- 2001-08-24 JP JP2002529782A patent/JP3848620B2/ja not_active Expired - Fee Related
- 2001-08-24 CN CNB018178707A patent/CN100530420C/zh not_active Expired - Fee Related
- 2001-08-24 CA CA002420378A patent/CA2420378C/en not_active Expired - Fee Related
- 2001-08-24 AU AU2315902A patent/AU2315902A/xx active Pending
- 2001-08-24 DE DE60109307T patent/DE60109307T2/de not_active Expired - Lifetime
- 2001-08-24 ES ES01985301T patent/ES2238053T3/es not_active Expired - Lifetime
- 2001-08-24 KR KR1020037002558A patent/KR100540266B1/ko not_active Expired - Fee Related
- 2001-08-24 EP EP01985301A patent/EP1316090B1/en not_active Expired - Lifetime
- 2001-08-24 WO PCT/NO2001/000348 patent/WO2002025665A2/en not_active Ceased
- 2001-09-24 US US10/088,913 patent/US20030137865A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN1471712A (zh) | 2004-01-28 |
| CA2420378C (en) | 2006-05-09 |
| NO20004236L (no) | 2002-02-25 |
| AU2002223159B2 (en) | 2005-04-14 |
| JP3848620B2 (ja) | 2006-11-22 |
| WO2002025665A2 (en) | 2002-03-28 |
| JP2004510283A (ja) | 2004-04-02 |
| AU2315902A (en) | 2002-04-02 |
| DK1316090T3 (da) | 2005-05-30 |
| EP1316090A2 (en) | 2003-06-04 |
| DE60109307T2 (de) | 2006-04-13 |
| KR100540266B1 (ko) | 2006-01-10 |
| CN100530420C (zh) | 2009-08-19 |
| NO20004236D0 (no) | 2000-08-24 |
| EP1316090B1 (en) | 2005-03-09 |
| KR20030059110A (ko) | 2003-07-07 |
| RU2245584C2 (ru) | 2005-01-27 |
| ATE290711T1 (de) | 2005-03-15 |
| WO2002025665A3 (en) | 2002-05-16 |
| US20030137865A1 (en) | 2003-07-24 |
| CA2420378A1 (en) | 2002-03-28 |
| DE60109307D1 (de) | 2005-04-14 |
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