JP3847940B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3847940B2
JP3847940B2 JP04205698A JP4205698A JP3847940B2 JP 3847940 B2 JP3847940 B2 JP 3847940B2 JP 04205698 A JP04205698 A JP 04205698A JP 4205698 A JP4205698 A JP 4205698A JP 3847940 B2 JP3847940 B2 JP 3847940B2
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JP
Japan
Prior art keywords
film
region
insulating film
forming
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04205698A
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English (en)
Japanese (ja)
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JPH11243150A (ja
JPH11243150A5 (enrdf_load_html_response
Inventor
幸広 牛久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP04205698A priority Critical patent/JP3847940B2/ja
Priority to US09/105,958 priority patent/US6184083B1/en
Publication of JPH11243150A publication Critical patent/JPH11243150A/ja
Priority to US09/688,989 priority patent/US7361960B1/en
Publication of JPH11243150A5 publication Critical patent/JPH11243150A5/ja
Application granted granted Critical
Publication of JP3847940B2 publication Critical patent/JP3847940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP04205698A 1997-06-30 1998-02-24 半導体装置の製造方法 Expired - Fee Related JP3847940B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP04205698A JP3847940B2 (ja) 1998-02-24 1998-02-24 半導体装置の製造方法
US09/105,958 US6184083B1 (en) 1997-06-30 1998-06-29 Semiconductor device and method of manufacturing the same
US09/688,989 US7361960B1 (en) 1997-06-30 2000-10-17 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04205698A JP3847940B2 (ja) 1998-02-24 1998-02-24 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11243150A JPH11243150A (ja) 1999-09-07
JPH11243150A5 JPH11243150A5 (enrdf_load_html_response) 2004-12-09
JP3847940B2 true JP3847940B2 (ja) 2006-11-22

Family

ID=12625460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04205698A Expired - Fee Related JP3847940B2 (ja) 1997-06-30 1998-02-24 半導体装置の製造方法

Country Status (1)

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JP (1) JP3847940B2 (enrdf_load_html_response)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4237332B2 (ja) 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法
KR100511908B1 (ko) * 1999-12-22 2005-09-02 주식회사 하이닉스반도체 다마신 및 자기 정렬 콘택 공정을 이용한 반도체 소자의제조방법
WO2001071807A1 (en) 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
KR100431085B1 (ko) * 2001-06-29 2004-05-12 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조 방법
US6624043B2 (en) * 2001-09-24 2003-09-23 Sharp Laboratories Of America, Inc. Metal gate CMOS and method of manufacturing the same
KR100607728B1 (ko) * 2002-09-07 2006-08-01 동부일렉트로닉스 주식회사 반도체 소자의 다마신 게이트 프로세스 형성방법
US7056794B2 (en) * 2004-01-09 2006-06-06 International Business Machines Corporation FET gate structure with metal gate electrode and silicide contact
US7060568B2 (en) * 2004-06-30 2006-06-13 Intel Corporation Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
US7148548B2 (en) * 2004-07-20 2006-12-12 Intel Corporation Semiconductor device with a high-k gate dielectric and a metal gate electrode
US7977751B2 (en) 2007-02-06 2011-07-12 Sony Corporation Insulated gate field effect transistor and a method of manufacturing the same
JP4367523B2 (ja) * 2007-02-06 2009-11-18 ソニー株式会社 絶縁ゲート電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH11243150A (ja) 1999-09-07

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