JPH11243150A5 - - Google Patents
Info
- Publication number
- JPH11243150A5 JPH11243150A5 JP1998042056A JP4205698A JPH11243150A5 JP H11243150 A5 JPH11243150 A5 JP H11243150A5 JP 1998042056 A JP1998042056 A JP 1998042056A JP 4205698 A JP4205698 A JP 4205698A JP H11243150 A5 JPH11243150 A5 JP H11243150A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- forming
- insulating film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04205698A JP3847940B2 (ja) | 1998-02-24 | 1998-02-24 | 半導体装置の製造方法 |
| US09/105,958 US6184083B1 (en) | 1997-06-30 | 1998-06-29 | Semiconductor device and method of manufacturing the same |
| US09/688,989 US7361960B1 (en) | 1997-06-30 | 2000-10-17 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04205698A JP3847940B2 (ja) | 1998-02-24 | 1998-02-24 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11243150A JPH11243150A (ja) | 1999-09-07 |
| JPH11243150A5 true JPH11243150A5 (enrdf_load_html_response) | 2004-12-09 |
| JP3847940B2 JP3847940B2 (ja) | 2006-11-22 |
Family
ID=12625460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04205698A Expired - Fee Related JP3847940B2 (ja) | 1997-06-30 | 1998-02-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3847940B2 (enrdf_load_html_response) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4237332B2 (ja) | 1999-04-30 | 2009-03-11 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100511908B1 (ko) * | 1999-12-22 | 2005-09-02 | 주식회사 하이닉스반도체 | 다마신 및 자기 정렬 콘택 공정을 이용한 반도체 소자의제조방법 |
| WO2001071807A1 (en) | 2000-03-24 | 2001-09-27 | Fujitsu Limited | Semiconductor device and method of manufacture thereof |
| KR100431085B1 (ko) * | 2001-06-29 | 2004-05-12 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 제조 방법 |
| US6624043B2 (en) * | 2001-09-24 | 2003-09-23 | Sharp Laboratories Of America, Inc. | Metal gate CMOS and method of manufacturing the same |
| KR100607728B1 (ko) * | 2002-09-07 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 다마신 게이트 프로세스 형성방법 |
| US7056794B2 (en) * | 2004-01-09 | 2006-06-06 | International Business Machines Corporation | FET gate structure with metal gate electrode and silicide contact |
| US7060568B2 (en) * | 2004-06-30 | 2006-06-13 | Intel Corporation | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
| US7148548B2 (en) * | 2004-07-20 | 2006-12-12 | Intel Corporation | Semiconductor device with a high-k gate dielectric and a metal gate electrode |
| US7977751B2 (en) | 2007-02-06 | 2011-07-12 | Sony Corporation | Insulated gate field effect transistor and a method of manufacturing the same |
| JP4367523B2 (ja) * | 2007-02-06 | 2009-11-18 | ソニー株式会社 | 絶縁ゲート電界効果トランジスタ及びその製造方法 |
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1998
- 1998-02-24 JP JP04205698A patent/JP3847940B2/ja not_active Expired - Fee Related