JPH11284191A5 - - Google Patents
Info
- Publication number
- JPH11284191A5 JPH11284191A5 JP1998084656A JP8465698A JPH11284191A5 JP H11284191 A5 JPH11284191 A5 JP H11284191A5 JP 1998084656 A JP1998084656 A JP 1998084656A JP 8465698 A JP8465698 A JP 8465698A JP H11284191 A5 JPH11284191 A5 JP H11284191A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- formation region
- channel formation
- region
- polycrystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08465698A JP3788021B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜トランジスタおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08465698A JP3788021B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜トランジスタおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11284191A JPH11284191A (ja) | 1999-10-15 |
| JPH11284191A5 true JPH11284191A5 (enrdf_load_html_response) | 2004-08-05 |
| JP3788021B2 JP3788021B2 (ja) | 2006-06-21 |
Family
ID=13836771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08465698A Expired - Fee Related JP3788021B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜トランジスタおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3788021B2 (enrdf_load_html_response) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4759598B2 (ja) * | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
| WO2011052413A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device, and electronic device |
| WO2011065244A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN115188830A (zh) * | 2022-07-27 | 2022-10-14 | 武汉华星光电技术有限公司 | 垂直结构的薄膜晶体管及电子器件 |
| CN119604027A (zh) * | 2023-09-06 | 2025-03-11 | 武汉华星光电技术有限公司 | 半导体器件、显示面板及芯片 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2546982B2 (ja) * | 1983-07-01 | 1996-10-23 | セイコー電子工業株式会社 | 薄膜トランジスタ |
| JPS60157260A (ja) * | 1984-01-26 | 1985-08-17 | Seiko Instr & Electronics Ltd | 縦型薄膜トランジスタ |
| JPS63293881A (ja) * | 1987-05-26 | 1988-11-30 | Ricoh Co Ltd | 縦型ｍｏｓ型薄膜トランジスタ |
| JPS63296378A (ja) * | 1987-05-28 | 1988-12-02 | Toppan Printing Co Ltd | 縦型薄膜トランジスタ |
| JPH01283879A (ja) * | 1988-05-11 | 1989-11-15 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形半導体装置とその製造方法 |
| JPH07106588A (ja) * | 1993-10-04 | 1995-04-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
1998
- 1998-03-30 JP JP08465698A patent/JP3788021B2/ja not_active Expired - Fee Related