JPH0445975B2 - - Google Patents

Info

Publication number
JPH0445975B2
JPH0445975B2 JP58000338A JP33883A JPH0445975B2 JP H0445975 B2 JPH0445975 B2 JP H0445975B2 JP 58000338 A JP58000338 A JP 58000338A JP 33883 A JP33883 A JP 33883A JP H0445975 B2 JPH0445975 B2 JP H0445975B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
semiconductor
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58000338A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59125663A (ja
Inventor
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58000338A priority Critical patent/JPS59125663A/ja
Publication of JPS59125663A publication Critical patent/JPS59125663A/ja
Publication of JPH0445975B2 publication Critical patent/JPH0445975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
JP58000338A 1983-01-05 1983-01-05 薄膜半導体装置の製造方法 Granted JPS59125663A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58000338A JPS59125663A (ja) 1983-01-05 1983-01-05 薄膜半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58000338A JPS59125663A (ja) 1983-01-05 1983-01-05 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59125663A JPS59125663A (ja) 1984-07-20
JPH0445975B2 true JPH0445975B2 (enrdf_load_html_response) 1992-07-28

Family

ID=11471090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58000338A Granted JPS59125663A (ja) 1983-01-05 1983-01-05 薄膜半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59125663A (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2509708B2 (ja) * 1989-09-07 1996-06-26 株式会社東芝 Ｓｏｉ型半導体装置及びその製造方法
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4137461B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4137460B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4338988B2 (ja) * 2002-02-22 2009-10-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4421202B2 (ja) * 2002-03-26 2010-02-24 株式会社半導体エネルギー研究所 表示装置の作製方法
US6906343B2 (en) 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device

Also Published As

Publication number Publication date
JPS59125663A (ja) 1984-07-20

Similar Documents

Publication Publication Date Title
US6919238B2 (en) Silicon on insulator (SOI) transistor and methods of fabrication
US8241989B2 (en) Integrated circuit with stacked devices
US6638823B2 (en) Ultra small size vertical MOSFET device and method for the manufacture thereof
US7259048B2 (en) Vertical replacement-gate silicon-on-insulator transistor
US7777275B2 (en) Silicon-on-insulator structures
US5420048A (en) Manufacturing method for SOI-type thin film transistor
US8198704B2 (en) Semiconductor device including a crystal semiconductor layer
US6569715B1 (en) Large grain single crystal vertical thin film polysilicon mosfets
US5663579A (en) Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal
US7208352B2 (en) Method of fabricating a thin film transistor with multiple gates using metal induced lateral crystallization
KR900003875B1 (ko) 소거가능 프로그래머블 판독전용 메모리장치 및 그의 제조방법
KR20080081433A (ko) 반도체 소자 제조 방법 및 이에 따라 제조된 반도체 소자
JP2003092262A (ja) 多結晶化用マスク及びこれを利用した多結晶薄膜トランジスタの製造方法
US5949102A (en) Semiconductor device having a gate electrode with only two crystal grains
US4868140A (en) Semiconductor device and method of manufacturing the same
JPH0445975B2 (enrdf_load_html_response)
KR100488844B1 (ko) 이중 게이트 ｍｏｓｆｅｔ 트랜지스터 및 그 제조 방법
JPH01184957A (ja) Ｍｏｓトランジスタの製造方法
JP2741659B2 (ja) 薄膜トランジスタの製造方法
JPH0294559A (ja) 半導体記憶装置およびその製造方法
KR100611214B1 (ko) 비정질실리콘의 결정화 방법, 이를 이용하여 제조된박막트랜지스터 및 평판표시장치
JPH05326879A (ja) 半導体記憶装置
JPH0442358B2 (enrdf_load_html_response)
JPS6229910B2 (enrdf_load_html_response)
JPH0546706B2 (enrdf_load_html_response)