JP3841897B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3841897B2
JP3841897B2 JP30595896A JP30595896A JP3841897B2 JP 3841897 B2 JP3841897 B2 JP 3841897B2 JP 30595896 A JP30595896 A JP 30595896A JP 30595896 A JP30595896 A JP 30595896A JP 3841897 B2 JP3841897 B2 JP 3841897B2
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JP
Japan
Prior art keywords
thin film
region
film transistor
channel
type
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP30595896A
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English (en)
Japanese (ja)
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JPH10135470A (ja
JPH10135470A5 (enExample
Inventor
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP30595896A priority Critical patent/JP3841897B2/ja
Publication of JPH10135470A publication Critical patent/JPH10135470A/ja
Publication of JPH10135470A5 publication Critical patent/JPH10135470A5/ja
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Publication of JP3841897B2 publication Critical patent/JP3841897B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP30595896A 1996-10-30 1996-10-30 半導体装置の作製方法 Expired - Fee Related JP3841897B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30595896A JP3841897B2 (ja) 1996-10-30 1996-10-30 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30595896A JP3841897B2 (ja) 1996-10-30 1996-10-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10135470A JPH10135470A (ja) 1998-05-22
JPH10135470A5 JPH10135470A5 (enExample) 2004-10-21
JP3841897B2 true JP3841897B2 (ja) 2006-11-08

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Family Applications (1)

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JP30595896A Expired - Fee Related JP3841897B2 (ja) 1996-10-30 1996-10-30 半導体装置の作製方法

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JP (1) JP3841897B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051661A (ja) 1999-08-16 2001-02-23 Semiconductor Energy Lab Co Ltd Ｄ／ａ変換回路および半導体装置
US7829394B2 (en) 2005-05-26 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same

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Publication number Publication date
JPH10135470A (ja) 1998-05-22

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