JP3841897B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP3841897B2 JP3841897B2 JP30595896A JP30595896A JP3841897B2 JP 3841897 B2 JP3841897 B2 JP 3841897B2 JP 30595896 A JP30595896 A JP 30595896A JP 30595896 A JP30595896 A JP 30595896A JP 3841897 B2 JP3841897 B2 JP 3841897B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- region
- film transistor
- channel
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000010409 thin film Substances 0.000 claims description 43
- 239000010408 film Substances 0.000 claims description 38
- 239000012535 impurity Substances 0.000 claims description 32
- 229910052698 phosphorus Inorganic materials 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 239000010407 anodic oxide Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595896A JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595896A JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135470A JPH10135470A (ja) | 1998-05-22 |
| JPH10135470A5 JPH10135470A5 (OSRAM) | 2004-10-21 |
| JP3841897B2 true JP3841897B2 (ja) | 2006-11-08 |
Family
ID=17951351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30595896A Expired - Fee Related JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3841897B2 (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001051661A (ja) | 1999-08-16 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Ｄ／ａ変換回路および半導体装置 |
| US7829394B2 (en) | 2005-05-26 | 2010-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
-
1996
- 1996-10-30 JP JP30595896A patent/JP3841897B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10135470A (ja) | 1998-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100509662B1 (ko) | 액티브 매트릭스형 디스플레이장치 및 그 제조방법 및 반도체장치의 제조방법 | |
| KR100195596B1 (ko) | 박막트랜지스터 반도체장치 및 액정표시장치 | |
| JP3946545B2 (ja) | Ｃｍｏｓ薄膜トランジスタの製造方法 | |
| US7709904B2 (en) | Thin film transistor substrate and method for manufacturing the same | |
| US7572685B2 (en) | Method of manufacturing thin film transistor | |
| KR100585873B1 (ko) | 폴리실리콘 액정표시소자 및 그 제조방법 | |
| JP2004079735A (ja) | 薄膜トランジスタの製造方法 | |
| US7317209B2 (en) | Thin film transistor device and method of manufacturing the same, thin film transistor substrate and display having the same | |
| JP3643025B2 (ja) | アクティブマトリクス型表示装置およびその製造方法 | |
| JP3841897B2 (ja) | 半導体装置の作製方法 | |
| KR100635067B1 (ko) | 엘디디 구조를 갖는 박막트랜지스터 및 그의 제조방법 | |
| KR100290900B1 (ko) | 정전기 보호용 트랜지스터의 제조 방법 | |
| KR100441436B1 (ko) | 투과율이 향상된 평판표시장치 및 그의 제조방법 | |
| KR20040058714A (ko) | 액정 표시 장치의 박막 트랜지스터 제조 방법 | |
| JP3949650B2 (ja) | アクティブマトリクス型表示装置の作製方法 | |
| JP2004056025A (ja) | 薄膜トランジスタ装置およびその製造方法 | |
| JPH07193245A (ja) | 薄膜トランジスタの製造方法 | |
| JP2001036097A (ja) | 半導体装置 | |
| KR20030047185A (ko) | 다결정 실리콘 박막트랜지스터의 제조 방법 | |
| JPH09326495A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JP4249512B2 (ja) | 絶縁ゲイト型半導体装置 | |
| JP4931411B2 (ja) | 半導体装置 | |
| KR20040058699A (ko) | 박막 트랜지스터 어레이 기판의 제조 방법 | |
| JP2004064056A (ja) | 半導体集積回路の作製方法 | |
| US20060263954A1 (en) | Method of forming thin film transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051025 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051212 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060221 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060421 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20060712 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060808 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060809 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090818 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090818 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100818 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100818 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110818 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110818 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120818 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120818 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130818 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |