JP3841406B2 - レジスト組成物 - Google Patents

レジスト組成物 Download PDF

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Publication number
JP3841406B2
JP3841406B2 JP2002112372A JP2002112372A JP3841406B2 JP 3841406 B2 JP3841406 B2 JP 3841406B2 JP 2002112372 A JP2002112372 A JP 2002112372A JP 2002112372 A JP2002112372 A JP 2002112372A JP 3841406 B2 JP3841406 B2 JP 3841406B2
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JP
Japan
Prior art keywords
group
acid
resin
resist composition
alkyl group
Prior art date
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Expired - Fee Related
Application number
JP2002112372A
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English (en)
Japanese (ja)
Other versions
JP2003307839A (ja
JP2003307839A5 (OSRAM
Inventor
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2002112372A priority Critical patent/JP3841406B2/ja
Publication of JP2003307839A publication Critical patent/JP2003307839A/ja
Publication of JP2003307839A5 publication Critical patent/JP2003307839A5/ja
Application granted granted Critical
Publication of JP3841406B2 publication Critical patent/JP3841406B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2002112372A 2002-04-15 2002-04-15 レジスト組成物 Expired - Fee Related JP3841406B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002112372A JP3841406B2 (ja) 2002-04-15 2002-04-15 レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002112372A JP3841406B2 (ja) 2002-04-15 2002-04-15 レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003307839A JP2003307839A (ja) 2003-10-31
JP2003307839A5 JP2003307839A5 (OSRAM) 2005-09-22
JP3841406B2 true JP3841406B2 (ja) 2006-11-01

Family

ID=29394892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002112372A Expired - Fee Related JP3841406B2 (ja) 2002-04-15 2002-04-15 レジスト組成物

Country Status (1)

Country Link
JP (1) JP3841406B2 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110025105A (ko) * 2009-09-01 2011-03-09 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴형성방법
KR20140000129A (ko) 2010-12-24 2014-01-02 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 이 조성물을 사용한 감활성광선성 또는 감방사선성 막 및 패턴형성방법
US9316911B2 (en) 2011-06-30 2016-04-19 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217492B2 (en) * 2002-12-25 2007-05-15 Jsr Corporation Onium salt compound and radiation-sensitive resin composition
JP4810862B2 (ja) * 2005-04-11 2011-11-09 Jsr株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
JP4770244B2 (ja) * 2005-04-11 2011-09-14 Jsr株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
JP2009029848A (ja) * 2007-07-24 2009-02-12 Mitsubishi Rayon Co Ltd 重合体及びその製造方法、レジスト組成物及びパターンが形成された基板の製造方法
JP5557625B2 (ja) * 2010-06-30 2014-07-23 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP5618815B2 (ja) * 2010-12-24 2014-11-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、この組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法
JP5277304B2 (ja) * 2010-12-24 2013-08-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、この組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法
WO2012098828A1 (ja) * 2011-01-21 2012-07-26 三菱瓦斯化学株式会社 低分子化合物、感放射線性組成物、およびレジストパターン形成方法
JP5746907B2 (ja) * 2011-04-28 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP6539760B2 (ja) * 2012-12-26 2019-07-03 東京応化工業株式会社 化合物
JP6088827B2 (ja) * 2013-01-10 2017-03-01 富士フイルム株式会社 ネガ型レジスト組成物、それを用いたレジスト膜及びパターン形成方法、並びにレジスト膜を備えたマスクブランクス
JP6313604B2 (ja) * 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
WO2016072169A1 (ja) * 2014-11-07 2016-05-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、電子デバイスの製造方法、及び電子デバイス
JP6571177B2 (ja) * 2015-05-14 2019-09-04 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
KR20240127977A (ko) * 2021-12-28 2024-08-23 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110025105A (ko) * 2009-09-01 2011-03-09 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴형성방법
KR101727105B1 (ko) * 2009-09-01 2017-04-14 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴형성방법
KR20140000129A (ko) 2010-12-24 2014-01-02 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 이 조성물을 사용한 감활성광선성 또는 감방사선성 막 및 패턴형성방법
US9081277B2 (en) 2010-12-24 2015-07-14 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition
US9316911B2 (en) 2011-06-30 2016-04-19 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition

Also Published As

Publication number Publication date
JP2003307839A (ja) 2003-10-31

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