JP3795346B2 - 磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド - Google Patents

磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド Download PDF

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Publication number
JP3795346B2
JP3795346B2 JP2001156018A JP2001156018A JP3795346B2 JP 3795346 B2 JP3795346 B2 JP 3795346B2 JP 2001156018 A JP2001156018 A JP 2001156018A JP 2001156018 A JP2001156018 A JP 2001156018A JP 3795346 B2 JP3795346 B2 JP 3795346B2
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Japan
Prior art keywords
oxide
layer
magnetoresistive
perovskite
ferromagnetic
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Expired - Fee Related
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JP2001156018A
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English (en)
Japanese (ja)
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JP2002094143A (ja
JP2002094143A5 (https=
Inventor
明弘 小田川
秀明 足立
雅祥 平本
望 松川
博 榊間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001156018A priority Critical patent/JP3795346B2/ja
Publication of JP2002094143A publication Critical patent/JP2002094143A/ja
Publication of JP2002094143A5 publication Critical patent/JP2002094143A5/ja
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Publication of JP3795346B2 publication Critical patent/JP3795346B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
JP2001156018A 2000-05-24 2001-05-24 磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド Expired - Fee Related JP3795346B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001156018A JP3795346B2 (ja) 2000-05-24 2001-05-24 磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000152380 2000-05-24
JP2000-152380 2000-05-24
JP2001156018A JP3795346B2 (ja) 2000-05-24 2001-05-24 磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド

Publications (3)

Publication Number Publication Date
JP2002094143A JP2002094143A (ja) 2002-03-29
JP2002094143A5 JP2002094143A5 (https=) 2005-04-14
JP3795346B2 true JP3795346B2 (ja) 2006-07-12

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Family Applications (1)

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JP2001156018A Expired - Fee Related JP3795346B2 (ja) 2000-05-24 2001-05-24 磁気抵抗効果型素子ならびにこれを用いた磁気記憶素子および磁気ヘッド

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JP (1) JP3795346B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4548211B2 (ja) * 2005-05-16 2010-09-22 ソニー株式会社 記憶素子の製造方法、記憶装置の製造方法
JP5493278B2 (ja) * 2008-03-13 2014-05-14 株式会社村田製作所 強磁性セラミック、ならびにそれを用いて構成される磁気抵抗素子および磁気センサ
WO2012140971A1 (ja) * 2011-04-14 2012-10-18 富士電機株式会社 ペロフスカイト型マンガン酸化物薄膜
JP6643609B2 (ja) * 2015-01-09 2020-02-12 国立研究開発法人産業技術総合研究所 記憶装置及びその製法

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JP2002094143A (ja) 2002-03-29

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