JP3792331B2 - 光半導体装置の製造方法、回折格子の形成方法 - Google Patents

光半導体装置の製造方法、回折格子の形成方法 Download PDF

Info

Publication number
JP3792331B2
JP3792331B2 JP01269297A JP1269297A JP3792331B2 JP 3792331 B2 JP3792331 B2 JP 3792331B2 JP 01269297 A JP01269297 A JP 01269297A JP 1269297 A JP1269297 A JP 1269297A JP 3792331 B2 JP3792331 B2 JP 3792331B2
Authority
JP
Japan
Prior art keywords
substrate
light beam
diffraction grating
light beams
interference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01269297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10209575A5 (enExample
JPH10209575A (ja
Inventor
松田　　学
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP01269297A priority Critical patent/JP3792331B2/ja
Priority to US08/923,255 priority patent/US5981307A/en
Priority to FR9711631A priority patent/FR2758914B1/fr
Publication of JPH10209575A publication Critical patent/JPH10209575A/ja
Priority to US09/332,890 priority patent/US6088377A/en
Publication of JPH10209575A5 publication Critical patent/JPH10209575A5/ja
Application granted granted Critical
Publication of JP3792331B2 publication Critical patent/JP3792331B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP01269297A 1997-01-27 1997-01-27 光半導体装置の製造方法、回折格子の形成方法 Expired - Fee Related JP3792331B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP01269297A JP3792331B2 (ja) 1997-01-27 1997-01-27 光半導体装置の製造方法、回折格子の形成方法
US08/923,255 US5981307A (en) 1997-01-27 1997-09-04 Fabrication process of optical semiconductor device having a diffraction grating
FR9711631A FR2758914B1 (fr) 1997-01-27 1997-09-18 Dispositif a semiconducteur optique comportant un reseau de diffraction et son procede de fabrication
US09/332,890 US6088377A (en) 1997-01-27 1999-06-15 Optical semiconductor device having a diffraction grating and fabrication process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01269297A JP3792331B2 (ja) 1997-01-27 1997-01-27 光半導体装置の製造方法、回折格子の形成方法

Publications (3)

Publication Number Publication Date
JPH10209575A JPH10209575A (ja) 1998-08-07
JPH10209575A5 JPH10209575A5 (enExample) 2004-12-02
JP3792331B2 true JP3792331B2 (ja) 2006-07-05

Family

ID=11812439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01269297A Expired - Fee Related JP3792331B2 (ja) 1997-01-27 1997-01-27 光半導体装置の製造方法、回折格子の形成方法

Country Status (3)

Country Link
US (2) US5981307A (enExample)
JP (1) JP3792331B2 (enExample)
FR (1) FR2758914B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970578B2 (ja) * 1997-03-17 1999-11-02 日本電気株式会社 分布帰還型半導体レーザ
JP3977920B2 (ja) * 1998-05-13 2007-09-19 富士通株式会社 半導体装置の製造方法
KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
US6271526B1 (en) * 1998-10-15 2001-08-07 California Institute Of Technology Efficient radiation coupling to quantum-well radiation-sensing array via evanescent waves
JP2003023209A (ja) * 2001-07-06 2003-01-24 Furukawa Electric Co Ltd:The 半導体素子の製造方法および半導体素子
US6903379B2 (en) 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
JP3944405B2 (ja) * 2002-03-19 2007-07-11 独立行政法人科学技術振興機構 可変波長固体色素レーザー装置
US6975465B1 (en) * 2002-04-03 2005-12-13 University Of Central Florida Research Foundation, Inc. Method and apparatus for use of beam control prisms with diode laser arrays
EP1509975A4 (en) * 2002-05-31 2005-06-15 Applied Optoelectronics Inc Single-mode DBR laser with improved phase shift part and method for its production
DE202004010922U1 (de) * 2004-07-12 2005-11-24 Leica Geosystems Ag Neigungssensor
DE102004053137A1 (de) * 2004-10-29 2006-05-11 Raab, Volker, Dr. Multispektraler Laser mit mehreren Gainelementen
KR100623027B1 (ko) 2005-02-28 2006-09-14 엘지전자 주식회사 그래이팅 패턴 및 그 제조 방법
JP7072047B2 (ja) * 2018-02-26 2022-05-19 パナソニックホールディングス株式会社 半導体発光素子
CN111162454B (zh) * 2020-01-02 2021-03-12 中国科学院半导体研究所 一种宽波段调谐系统及调谐方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS61279191A (ja) * 1985-06-04 1986-12-09 Mitsubishi Electric Corp 半導体レ−ザ
JP2552504B2 (ja) * 1987-10-12 1996-11-13 シャープ株式会社 半導体レーザアレイ装置
JP2624310B2 (ja) * 1988-09-28 1997-06-25 キヤノン株式会社 多波長半導体レーザ装置
JPH0697600A (ja) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp 回折格子の形成方法
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置

Also Published As

Publication number Publication date
US5981307A (en) 1999-11-09
US6088377A (en) 2000-07-11
FR2758914A1 (fr) 1998-07-31
FR2758914B1 (fr) 2005-07-15
JPH10209575A (ja) 1998-08-07

Similar Documents

Publication Publication Date Title
JP3792331B2 (ja) 光半導体装置の製造方法、回折格子の形成方法
JP3983933B2 (ja) 半導体レーザ、および半導体レーザの製造方法
US5436195A (en) Method of fabricating an integrated semiconductor light modulator and laser
KR20110122764A (ko) 좁은 표면 파형 격자
JPS61160987A (ja) 集積型半導体光素子とその製造方法
JPS6219803A (ja) 回折格子形成方法及び装置
KR100413405B1 (ko) 반도체레이저장치및그것을이용한광인쇄장치
EP1376789A2 (en) Distributed Feedback Semiconductor Laser for Outputting Beam of Single Wavelength
EP1531466B1 (en) Wavelength-tunable light source
US5307183A (en) Apparatus and method for fabricating a curved grating in a surface emitting distributed feedback semiconductor laser diode device
EP0732785A1 (en) Semiconductor laser device and method of fabricating semiconductor laser device
JPH04234187A (ja) 位相シフト分布帰還レーザ
JP2735589B2 (ja) 回折格子の製造方法
JP3762342B2 (ja) 分布帰還型半導体レーザの製造方法
JP3773880B2 (ja) 分布帰還型半導体レーザ
JPH02310986A (ja) 半導体レーザ素子およびホトマスクならびにそれらの製造方法
JPH07105553B2 (ja) 分布帰還型半導体レーザの製造方法
JP3675963B2 (ja) 半導体レーザ装置及びそれを用いた光印刷装置
JPS63263788A (ja) 半導体レ−ザ
JPS62199085A (ja) 半導体レ−ザ
JP3773869B2 (ja) 分布帰還型半導体レーザの製造方法
JP2019021844A (ja) 半導体レーザおよびその製造方法
JPH03268380A (ja) 半導体レーザ装置
JPS60211993A (ja) 半導体レ−ザ
JP3537621B2 (ja) 半導体レーザの製造方法並びにその製造装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051003

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060308

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060404

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060405

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090414

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100414

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110414

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110414

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120414

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130414

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees