JP3759135B2 - 半導体装置および電子装置 - Google Patents
半導体装置および電子装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 50
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Description
図1は本実施の形態に係る半導体装置の回路を示す。ICチップ11は、シリーズレギュレータを構成している。ICチップ11は、電源から入力電圧Viを入力する入力用パッドPi1と、制御の目的である出力電圧Voを出力する出力用パッドPo1と、外部に出力された出力電圧Voを帰還電圧Vfbとしてフィードバックする帰還用パッドPf1を有する。
Vti=V0になるまで、Vtoが有効に現れない。V0はトランジスタQ1が動作を開始したときのソース・ドレイン電圧に相当する。つづいて、Vto=VfbになるまでVtoはリニアに増加する。以降、Vto=Vfbを維持する。
(2)出力ワイヤWo1が切れたとき
Vti=V0+Vfになるまで、Vtoが有効に現れない。VfはトランジスタQ1の順方向降下電圧である。なぜなら、VtoはトランジスタQ1のドレインから第1トランジスタD1、帰還ワイヤWf1を経て出力端子Po2に現れるためである。このため、減電テストによって故障を発見することができる。
(3)帰還ワイヤWf1が切れたとき
Vti=V0でVtoが有効に現れ、以降、Vtoがリニアに増加する点は(1)同様である。しかし、Vto=Vfbでは止まらず、Vto=Vfb+Vfまで増加する。以降、この値を維持する。なぜなら、Vfb’は出力電圧が第1ダイオードD1を通ったあとの電圧として現れるためである。このため、やはり減電テストによって故障を発見することができる。
図3は、本実施の形態に係る半導体装置の回路を示す。以下、実施の形態1と同等の構成には同じ符号を与え適宜説明を略す。本実施の形態が実施の形態1と異なるのは、レギュレータに利用するトランジスタがふたつ存在する点である。第1のトランジスタQ1の配置は実施の形態1と同じである。追加になった第2のトランジスタQ2も、ゲート、ソース、ドレインとも第1のトランジスタQ1と共通である。従って、第2のトランジスタQ2は、第1のトランジスタQ1と同じ動作をする。本実施の形態では、ふたつのトランジスタを置くことにより、各トランジスタのサイズが比較的小さくても必要なドライブ能力を確保することができる。以上の構成におけるワイヤオープンの検出は実施の形態1と同様である。
図4は本実施の形態に係る半導体装置の回路を示す。以下、実施の形態2と同等の構成には同じ符号を与え適宜説明を略す。本実施の形態が実施の形態2と異なるのは、出力側ではなく、入力側にふたつのパッドを設け、そちらにダイオードを設けた点である。したがって、本実施の形態では、制御回路は電池電圧をふたつのパッドという2系統で受けて目的の電圧を生成する構成といってよい。図4のごとく、第2の入力用パッドPi1aが新設され、これが入力端子Pi2にワイヤ接続される。一方、帰還用パッドPf1は廃止され、第1、第2ダイオードD1、D2も廃止され、第1、第2トランジスタQ1、Q2のドレインが直接出力用パッドPo1に接続されている。第1トランジスタQ1のソースは実施の形態2と同じであるが、第2トランジスタQ2のソースは新設された入力用パッドWi1aに接続され、第2トランジスタQ2と第1トランジスタQ1のドレイン間に、前者から後者を順方向とする第3ダイオードD3と、その逆向きの第4ダイオードD4が接続されている。以上の構成におけるワイヤオープンの検出は以下の方法でなされる。
第2トランジスタQ2のソース電位がVtiから第4トランジスタD4の順方向降下電圧Vf分下がるため、第2トランジスタQ2のオンの程度が弱まる。その結果、ICチップ11全体としてのドライブ能力が落ちるため、出力端子Po2で駆動電流を監視することにより、ワイヤオープンを検出することができる。なお、ワイヤが切れても、第2トランジスタQ2をある程度動作させることにより、第1トランジスタQ1に過度の負担がかかることを防止することができる。
(2)最初から存在していた入力ワイヤWi1が切れたとき
(1)と同様の方法で検出できる。
(3)もとのワイヤWo1が切れたとき
当然、Vtiが変化してもVtoが現れないため、検出は容易である。
図5は本実施の形態に係る半導体装置の回路を示す。本実施の形態は実施の形態2と3を組み合わせたものであり、入力側も出力側もふたつのパッドを設けている。すなわち、入力側については実施の形態3と同じ構成、出力側については実施の形態2と同じ構成である。したがって、入力側のワイヤオープンの検出は実施の形態3と同じ方法、出力側のワイヤオープンについては実施の形態2と同じ方法が利用できる。
図6は、実施の形態1に係る半導体装置を搭載した電子機器の概念構成図である。ただし、実施の形態1では、ダイオードを半導体装置の内部に設けたが、ここでは外部に設ける。また、実施の形態1では出力用ピンPo2が帰還用ピンを兼ねたが、この実施の形態では帰還専用ピンPf2を新設する。
21 半導体装置
D1、D2、D3、D4 ダイオード
Pi1、Pi1a、Po1、Pf1 パッド
Pi2、Pi2a、Po2、Pf2 ピン
Wi1、Wi1a、Wo1、Wf1 ボンディングワイヤ
Q1、Q2 トランジスタ
OP1 演算増幅器
31 負荷装置
40 電子装置
Claims (5)
- 第1パッドおよび第2パッドを有するICチップと、
前記第1パッドおよび第2パッドの両方に接続された端子と、
を有し、前記第1パッドに結線される第1信号と前記第2パッドに結線される第2信号とをダイオードによってカップリングすることにより、各パッドと端子との間のワイヤオープンを検出可能としたことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記端子は入力端子であり、
当該半導体装置はさらに、前記入力端子に所定の電源電圧が印加されたときその電源電圧から目的の電圧を生成する制御回路と、生成した目的の電圧を出力する出力端子を有し、
前記制御回路は、前記電源電圧を前記第1信号および第2信号という2系統で受けて前記目的の電圧を生成する構成であることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記端子は出力端子であり、
当該半導体装置はさらに、所定の電源電圧が印加される入力端子と、その電源電圧から目的の電圧を生成する制御回路を有し、
前記目的の電圧を前記第1信号または前記第2信号のいずれかに伝搬せしめたことを特徴とする半導体装置。 - 電源電圧が印加される入力端子と、前記電源電圧から目的の電圧を生成する制御回路と、生成した目的の電圧を出力する出力端子とを含み、
前記入力端子または出力端子の少なくとも一方の端子について、ICチップ側のパッドを複数設けて信号伝搬経路を多重化し、その多重化された複数の信号伝搬経路のそれぞれのパッドと前記端子とを接続するとともに、多重化された信号伝搬経路間をダイオードでカップリングすることにより、各パッドと端子との間のワイヤオープンを検出可能としたことを特徴とする半導体装置。 - 半導体装置と負荷装置を搭載し、
前記半導体装置は、電源電圧が印加される入力端子と、前記電源電圧から目的の電圧を生成する制御回路と、生成した目的の電圧を出力する出力端子とを含み、
前記入力端子または出力端子の少なくとも一方について、ICチップ側のパッドを複数設けて信号伝搬経路を多重化し、その多重化された複数の信号伝搬経路を前記負荷装置に接続するとともに、多重化された信号伝搬経路間を前記半導体装置内部または半導体装置と前記負荷装置の間の個所において、ダイオードでカップリングすることにより、各パッドと端子との間のワイヤオープンを検出可能としたことを特徴とする電子装置。
Priority Applications (9)
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JP2003322295A JP3759135B2 (ja) | 2003-09-12 | 2003-09-12 | 半導体装置および電子装置 |
KR1020030068288A KR100594872B1 (ko) | 2002-10-04 | 2003-10-01 | 전압귀환회로를 갖는 반도체 장치 및 이를 이용한 전자장치 |
TW092127258A TWI236762B (en) | 2002-10-04 | 2003-10-02 | Semiconductor device having voltage feedback circuit therein, and electronic apparatus using the same |
US10/677,791 US20040075488A1 (en) | 2002-10-04 | 2003-10-02 | Semiconductor device having voltage feedback circuit therein, and electronic apparatus using the same |
CNB2003101198401A CN1278423C (zh) | 2002-10-04 | 2003-10-04 | 具有电压反馈电路的半导体器件及利用它的电子设备 |
TW093124781A TWI336519B (en) | 2003-09-12 | 2004-08-18 | Semiconductor device and electronic apparatus capable of detecting open wire using weak current |
US10/931,445 US7321257B2 (en) | 2003-09-12 | 2004-09-01 | Semiconductor device capable of detecting an open bonding wire using weak current |
CNB200410068702XA CN100356568C (zh) | 2003-09-12 | 2004-09-02 | 可用微弱电流检测断路的半导体装置以及电子装置 |
KR1020040072618A KR20050027072A (ko) | 2003-09-12 | 2004-09-10 | 미약 전류로 와이어 오픈을 검출할 수 있는 반도체 장치및 전자 장치 |
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US9875963B2 (en) | 2014-12-19 | 2018-01-23 | Toshiba Memory Corporation | Semiconductor device |
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JP4683472B2 (ja) * | 2005-04-18 | 2011-05-18 | ローム株式会社 | 直流電源装置 |
CN101738559B (zh) * | 2008-11-20 | 2012-06-20 | 上海华虹Nec电子有限公司 | 使用耗尽型晶体管的开路检测器及其使用方法 |
JP6056299B2 (ja) * | 2012-09-13 | 2017-01-11 | 富士電機株式会社 | 半導体装置とワイヤオープン不良の検出方法 |
CN105811759B (zh) * | 2014-12-29 | 2019-04-02 | 登丰微电子股份有限公司 | 电源供应装置 |
JP6365467B2 (ja) * | 2015-08-28 | 2018-08-01 | 株式会社デンソー | 断線検出装置 |
CN110221644B (zh) * | 2019-05-23 | 2021-02-26 | 上海艾为电子技术股份有限公司 | 一种芯片及其外置rset电阻开路监测电路 |
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US9875963B2 (en) | 2014-12-19 | 2018-01-23 | Toshiba Memory Corporation | Semiconductor device |
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TWI336519B (en) | 2011-01-21 |
JP2005093567A (ja) | 2005-04-07 |
CN100356568C (zh) | 2007-12-19 |
TW200511558A (en) | 2005-03-16 |
KR20050027072A (ko) | 2005-03-17 |
US20050057301A1 (en) | 2005-03-17 |
US7321257B2 (en) | 2008-01-22 |
CN1595651A (zh) | 2005-03-16 |
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