JP3746604B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP3746604B2
JP3746604B2 JP33867397A JP33867397A JP3746604B2 JP 3746604 B2 JP3746604 B2 JP 3746604B2 JP 33867397 A JP33867397 A JP 33867397A JP 33867397 A JP33867397 A JP 33867397A JP 3746604 B2 JP3746604 B2 JP 3746604B2
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JP
Japan
Prior art keywords
terminal
power supply
fet
power
supply terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33867397A
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English (en)
Japanese (ja)
Other versions
JPH11177087A5 (cg-RX-API-DMAC7.html
JPH11177087A (ja
Inventor
敦 藤城
哲郎 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP33867397A priority Critical patent/JP3746604B2/ja
Priority to US09/206,966 priority patent/US6218889B1/en
Publication of JPH11177087A publication Critical patent/JPH11177087A/ja
Priority to US09/648,764 priority patent/US7482861B1/en
Publication of JPH11177087A5 publication Critical patent/JPH11177087A5/ja
Application granted granted Critical
Publication of JP3746604B2 publication Critical patent/JP3746604B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP33867397A 1907-12-09 1997-12-09 半導体装置およびその製造方法 Expired - Fee Related JP3746604B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33867397A JP3746604B2 (ja) 1997-12-09 1997-12-09 半導体装置およびその製造方法
US09/206,966 US6218889B1 (en) 1907-12-09 1998-12-08 Semiconductor integrated circuit device, and method of manufacturing the same
US09/648,764 US7482861B1 (en) 1997-12-09 2000-08-28 Semiconductor integrated circuit device, and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33867397A JP3746604B2 (ja) 1997-12-09 1997-12-09 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPH11177087A JPH11177087A (ja) 1999-07-02
JPH11177087A5 JPH11177087A5 (cg-RX-API-DMAC7.html) 2005-02-03
JP3746604B2 true JP3746604B2 (ja) 2006-02-15

Family

ID=18320390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33867397A Expired - Fee Related JP3746604B2 (ja) 1907-12-09 1997-12-09 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US6218889B1 (cg-RX-API-DMAC7.html)
JP (1) JP3746604B2 (cg-RX-API-DMAC7.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
US6980016B2 (en) * 2001-07-02 2005-12-27 Intel Corporation Integrated circuit burn-in systems
JP4267865B2 (ja) * 2002-04-19 2009-05-27 株式会社デンソー 負荷駆動装置
US6700763B2 (en) 2002-06-14 2004-03-02 Thomson Licensing S.A. Protected dual-voltage microcircuit power arrangement
JP4765252B2 (ja) * 2004-01-13 2011-09-07 株式会社豊田自動織機 温度検出機能付き半導体装置
JP4570896B2 (ja) * 2004-04-06 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102004019447A1 (de) * 2004-04-19 2005-11-10 Siemens Ag Vorrichtung, insbesondere intelligentes Leistungsmodul, mit planarer Verbindungstechnik
JP4641164B2 (ja) * 2004-09-14 2011-03-02 ルネサスエレクトロニクス株式会社 過熱検出回路
US20080001647A1 (en) * 2006-06-29 2008-01-03 George Stennis Moore Temperature stabilized integrated circuits
EP2383607A1 (en) * 2006-07-19 2011-11-02 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal display panel and television receiver
JP5226248B2 (ja) * 2006-08-02 2013-07-03 ルネサスエレクトロニクス株式会社 温度検出回路及び半導体装置
US7573687B2 (en) 2006-11-21 2009-08-11 Denso Corporation Power semiconductor device
JP5315730B2 (ja) * 2008-03-12 2013-10-16 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5499792B2 (ja) * 2010-03-12 2014-05-21 オムロン株式会社 センサ用出力集積回路およびセンサ装置
JP5655705B2 (ja) * 2011-05-24 2015-01-21 住友電気工業株式会社 半導体装置
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6345930B2 (ja) 2013-12-26 2018-06-20 ローム株式会社 半導体装置およびその設計方法
US9712156B2 (en) * 2014-12-01 2017-07-18 Hamilton Sundstrand Corporation Solid state power controllers
US10777475B2 (en) * 2015-12-04 2020-09-15 Renesas Electronics Corporation Semiconductor chip, semiconductor device, and electronic device
JP7155534B2 (ja) * 2018-02-16 2022-10-19 富士電機株式会社 半導体装置
JP7206652B2 (ja) * 2018-03-30 2023-01-18 富士電機株式会社 半導体装置、半導体パッケージ、半導体モジュール、および半導体回路装置
CN110323273B (zh) 2018-03-30 2025-02-25 富士电机株式会社 半导体装置、半导体封装、半导体模块及半导体电路装置
WO2019198800A1 (ja) 2018-04-11 2019-10-17 ローム株式会社 半導体装置
JP6609348B2 (ja) * 2018-05-24 2019-11-20 ローム株式会社 半導体チップ
CN115428143A (zh) * 2020-04-27 2022-12-02 罗姆股份有限公司 半导体装置
JP7286044B2 (ja) * 2021-02-19 2023-06-02 三菱電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
US4667121A (en) * 1986-05-27 1987-05-19 Motorola, Inc. Integrated circuit speed controller
JPH0472755A (ja) * 1990-07-13 1992-03-06 Sumitomo Electric Ind Ltd 化合物半導体集積装置
JPH0567661A (ja) 1991-09-10 1993-03-19 Nippondenso Co Ltd 電力用半導体装置
DE69311921T2 (de) * 1992-02-03 1998-01-29 Philips Electronics Nv Anordnung zum Ein- und Ausschalten eines Leistungstransistors
JP2837054B2 (ja) * 1992-09-04 1998-12-14 三菱電機株式会社 絶縁ゲート型半導体装置
JP3353388B2 (ja) 1993-06-23 2002-12-03 株式会社デンソー 電力用半導体装置
JP3226074B2 (ja) 1994-02-17 2001-11-05 富士電機株式会社 半導体集積回路装置
GB9423076D0 (en) * 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
GB9420572D0 (en) * 1994-10-12 1994-11-30 Philips Electronics Uk Ltd A protected switch
JPH09191103A (ja) * 1996-01-09 1997-07-22 Nec Corp 電流検出手段を有する半導体装置
US5796278A (en) * 1996-04-26 1998-08-18 Delco Electronics Corporaiton Circuitry for controlling load current

Also Published As

Publication number Publication date
JPH11177087A (ja) 1999-07-02
US7482861B1 (en) 2009-01-27
US6218889B1 (en) 2001-04-17

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