JPH11177087A5 - - Google Patents

Info

Publication number
JPH11177087A5
JPH11177087A5 JP1997338673A JP33867397A JPH11177087A5 JP H11177087 A5 JPH11177087 A5 JP H11177087A5 JP 1997338673 A JP1997338673 A JP 1997338673A JP 33867397 A JP33867397 A JP 33867397A JP H11177087 A5 JPH11177087 A5 JP H11177087A5
Authority
JP
Japan
Prior art keywords
terminal
power supply
lead
supply terminal
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997338673A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177087A (ja
JP3746604B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33867397A priority Critical patent/JP3746604B2/ja
Priority claimed from JP33867397A external-priority patent/JP3746604B2/ja
Priority to US09/206,966 priority patent/US6218889B1/en
Publication of JPH11177087A publication Critical patent/JPH11177087A/ja
Priority to US09/648,764 priority patent/US7482861B1/en
Publication of JPH11177087A5 publication Critical patent/JPH11177087A5/ja
Application granted granted Critical
Publication of JP3746604B2 publication Critical patent/JP3746604B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33867397A 1907-12-09 1997-12-09 半導体装置およびその製造方法 Expired - Fee Related JP3746604B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33867397A JP3746604B2 (ja) 1997-12-09 1997-12-09 半導体装置およびその製造方法
US09/206,966 US6218889B1 (en) 1907-12-09 1998-12-08 Semiconductor integrated circuit device, and method of manufacturing the same
US09/648,764 US7482861B1 (en) 1997-12-09 2000-08-28 Semiconductor integrated circuit device, and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33867397A JP3746604B2 (ja) 1997-12-09 1997-12-09 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPH11177087A JPH11177087A (ja) 1999-07-02
JPH11177087A5 true JPH11177087A5 (cg-RX-API-DMAC7.html) 2005-02-03
JP3746604B2 JP3746604B2 (ja) 2006-02-15

Family

ID=18320390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33867397A Expired - Fee Related JP3746604B2 (ja) 1907-12-09 1997-12-09 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US6218889B1 (cg-RX-API-DMAC7.html)
JP (1) JP3746604B2 (cg-RX-API-DMAC7.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
US6980016B2 (en) * 2001-07-02 2005-12-27 Intel Corporation Integrated circuit burn-in systems
JP4267865B2 (ja) * 2002-04-19 2009-05-27 株式会社デンソー 負荷駆動装置
US6700763B2 (en) 2002-06-14 2004-03-02 Thomson Licensing S.A. Protected dual-voltage microcircuit power arrangement
JP4765252B2 (ja) * 2004-01-13 2011-09-07 株式会社豊田自動織機 温度検出機能付き半導体装置
JP4570896B2 (ja) * 2004-04-06 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102004019447A1 (de) * 2004-04-19 2005-11-10 Siemens Ag Vorrichtung, insbesondere intelligentes Leistungsmodul, mit planarer Verbindungstechnik
JP4641164B2 (ja) * 2004-09-14 2011-03-02 ルネサスエレクトロニクス株式会社 過熱検出回路
US20080001647A1 (en) * 2006-06-29 2008-01-03 George Stennis Moore Temperature stabilized integrated circuits
EP2383607A1 (en) * 2006-07-19 2011-11-02 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal display panel and television receiver
JP5226248B2 (ja) * 2006-08-02 2013-07-03 ルネサスエレクトロニクス株式会社 温度検出回路及び半導体装置
US7573687B2 (en) 2006-11-21 2009-08-11 Denso Corporation Power semiconductor device
JP5315730B2 (ja) * 2008-03-12 2013-10-16 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5499792B2 (ja) * 2010-03-12 2014-05-21 オムロン株式会社 センサ用出力集積回路およびセンサ装置
JP5655705B2 (ja) * 2011-05-24 2015-01-21 住友電気工業株式会社 半導体装置
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6345930B2 (ja) 2013-12-26 2018-06-20 ローム株式会社 半導体装置およびその設計方法
US9712156B2 (en) * 2014-12-01 2017-07-18 Hamilton Sundstrand Corporation Solid state power controllers
US10777475B2 (en) * 2015-12-04 2020-09-15 Renesas Electronics Corporation Semiconductor chip, semiconductor device, and electronic device
JP7155534B2 (ja) * 2018-02-16 2022-10-19 富士電機株式会社 半導体装置
JP7206652B2 (ja) * 2018-03-30 2023-01-18 富士電機株式会社 半導体装置、半導体パッケージ、半導体モジュール、および半導体回路装置
CN110323273B (zh) 2018-03-30 2025-02-25 富士电机株式会社 半导体装置、半导体封装、半导体模块及半导体电路装置
WO2019198800A1 (ja) 2018-04-11 2019-10-17 ローム株式会社 半導体装置
JP6609348B2 (ja) * 2018-05-24 2019-11-20 ローム株式会社 半導体チップ
CN115428143A (zh) * 2020-04-27 2022-12-02 罗姆股份有限公司 半导体装置
JP7286044B2 (ja) * 2021-02-19 2023-06-02 三菱電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
US4667121A (en) * 1986-05-27 1987-05-19 Motorola, Inc. Integrated circuit speed controller
JPH0472755A (ja) * 1990-07-13 1992-03-06 Sumitomo Electric Ind Ltd 化合物半導体集積装置
JPH0567661A (ja) 1991-09-10 1993-03-19 Nippondenso Co Ltd 電力用半導体装置
DE69311921T2 (de) * 1992-02-03 1998-01-29 Philips Electronics Nv Anordnung zum Ein- und Ausschalten eines Leistungstransistors
JP2837054B2 (ja) * 1992-09-04 1998-12-14 三菱電機株式会社 絶縁ゲート型半導体装置
JP3353388B2 (ja) 1993-06-23 2002-12-03 株式会社デンソー 電力用半導体装置
JP3226074B2 (ja) 1994-02-17 2001-11-05 富士電機株式会社 半導体集積回路装置
GB9423076D0 (en) * 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
GB9420572D0 (en) * 1994-10-12 1994-11-30 Philips Electronics Uk Ltd A protected switch
JPH09191103A (ja) * 1996-01-09 1997-07-22 Nec Corp 電流検出手段を有する半導体装置
US5796278A (en) * 1996-04-26 1998-08-18 Delco Electronics Corporaiton Circuitry for controlling load current

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