JP3691852B2 - 研磨パッド - Google Patents

研磨パッド Download PDF

Info

Publication number
JP3691852B2
JP3691852B2 JP50955797A JP50955797A JP3691852B2 JP 3691852 B2 JP3691852 B2 JP 3691852B2 JP 50955797 A JP50955797 A JP 50955797A JP 50955797 A JP50955797 A JP 50955797A JP 3691852 B2 JP3691852 B2 JP 3691852B2
Authority
JP
Japan
Prior art keywords
pad
resin
polishing
wafer
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP50955797A
Other languages
English (en)
Other versions
JPH11512977A (ja
Inventor
ジョン ヴィー.エイチ. ロバーツ
Original Assignee
ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24060375&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3691852(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド filed Critical ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド
Publication of JPH11512977A publication Critical patent/JPH11512977A/ja
Application granted granted Critical
Publication of JP3691852B2 publication Critical patent/JP3691852B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B3/00Sharpening cutting edges, e.g. of tools; Accessories therefor, e.g. for holding the tools
    • B24B3/60Sharpening cutting edges, e.g. of tools; Accessories therefor, e.g. for holding the tools of tools not covered by the preceding subgroups
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31Surface property or characteristic of web, sheet or block

Description

【0001】
[技術分野]
本発明は、ガラス、半導体、誘電/金属複合体及び集積回路等に平滑な超平坦面を形成するのに使用される研磨パッドに関するものである。特に、このようなパッドのバルク構造と、研磨あるいは平坦化の工程中での光学的インシチュ(insitu)終点検出を可能にする能力に関するものである。
【0002】
[従来の技術]
多層集積回路の製造中に、半導体ウェーハの形態において、集積回路構造の平坦化をすることが望ましい。平坦化は非常に精密でなければならず、所定の面からミクロンの何分の一をも違わないウェーハ面を作らなければならない。平坦化は、通常、CMP、即ちケミカル−メカニカル ポリシングにより、大半は研磨パッドを装着した通常円形の回転板と、研磨パッドの上にウェーハをべったりと押しつけるウェーハキャリアと、スラリーの形態で研磨パッドに化学薬品と研磨剤を供給する手段からなる装置において行われる。薄くて平坦な半導体ウェーハを研磨する装置は公知である。これら平坦化装置は、アイペック プレイナ(IPEC Planer)、ストラスボー マニファクチャリング(Strausbaugh Manufacturing)、スピードファム コーポレイション(tha Speedfam Corporation)等によって製造されている。これら装置で半導体ウェーハを平坦化する際におこる特筆すべき問題は、ウェーハが所望の平坦度に研磨されたことを測定することである。従来技術に見られる大半の終点検出方法は、上部層の除去によるウェーハの表面構造の変化に頼っている。従って、平坦度は測定されず、単に、上層が除去されたことによって二次的に平坦になったと見倣されるだけである。アメリカ特許第5,036,015号では、研磨パッドとウェーハ間の摩擦の変化が終点を提示するとしている。アメリカ特許第5,240,552号では、ウェーハの厚みが反射音響波の分析により測定されている。アメリカ特許第5,337,015号は、電気的にアースした研磨テーブルと研磨パッドの下に設けた特殊な電極を開示し、導電性スラリーを利用する絶縁層の厚さの測定を可能にしている。これらインシチュ厚さ測定具は非常に複雑で、測定するためには特殊な電気回路を要する。大抵の場合、複雑なインシチュ測定方法に代えて、ウェーハを研磨装置から取り外し、酸化膜の厚みを測定する分光装置の使用によって平坦度が測定されている。通常ウェーハは、過研磨を防ぐため、所定の終点に達する前に研磨作業から外される。その後、そのウェーハは所望の終点まで研磨するため研磨機に再び装着される。
【0003】
アメリカ特許第5,081,796号は、レーザー干渉測定法等の酸化層を迅速に測定する方法をウェーハの下側に使用できるように、研磨機上で、研磨パッドの端を越えてウェーハを移動させるための方法と装置とを開示している。本方法は、所定の時間にウェーハの一部分を研磨工程から外すので、全工程においてウェーハが均一な研磨を受けられないという不利な点がある。これは、アメリカ特許第5,413,941号が開示している半導体平坦化研磨工程中での光学的終点検出法にも当てはまる。ウェーハの継続的な全研磨状態において、このようなレーザー光測定を採用できる装置が非常に好ましい。
【0004】
[発明の概要]
シリコンウェーハが研磨される際のウェーハの表面状態の光学的検出の使用が可能なシリコンウェーハの研磨用装置に、パッドが設置される。これは、パッド全体あるいはパッドの一部を、スラリー粒子を吸収あるいはスラリー粒子を輸送するという本質的な能力を持たず、光学的方法でウェーハの表面状態を検出ために使用される光線が透過する硬質均一樹脂シートから作ることで達成できる。このパッドを作るには、190〜3500nmの範囲の波長を持つ光が透過する樹脂が好ましい。
【0005】
[発明の詳細な説明]
現在、シリコンウェーハの研磨に使用されている硬質均一樹脂シートからなる研磨パッドがある。これらは、この明細書において参照されているアメリカ特許第5,489,233号に記載されている。硬質均一樹脂シートはスラリー粒子を吸収したり、輸送したりする本質的な能力を持たない。このスラリー粒子の吸収あるいは輸送ができないということは、従来技術の研磨パッドのバルクの特性から、硬質均一樹脂シートからなる研磨パッドのバルクの特性を区別するものである。全ての従来技術のパッドは、繊維からなり、マイクロバルーンが充填されたあるいは製造中に発泡されたいずれかの結果として生じる小孔を含むバルク構造を有するか、あるいは砥粒が充填されている。従来技術のパッドが硬質樹脂でできているとしても、それらは均一構造ではなく、進入してくるどんな光線をもひどく散乱させるため、光線が透過しないバルク構造を有する。本発明に有用な樹脂シートの表面には、硬質均一シートを良質の研磨パッドに変えるマクロ溝とミクロ溝の両方を設けることができる。参照したアメリカ特許第5,489,233号で指摘されているように、このようなパッドは、ポリウレタン、アクリル、ポリカーボネート、ナイロン、ポリエステル等の硬質均一樹脂のいずれからも作ることができる。これらは全部、190〜3500nmの範囲の波長の光線が透過する樹脂からできうるため、干渉測定法等の光学的手法を使ってインシチュ終点検出が可能なパッドが作成しうる。
【0006】
透過パッドは、樹脂シート形成の技術分野の専門家に公知な注型、押出成形等のいかなる方法によっても作られうる。樹脂は熱可塑性樹脂材とすることができ、注型、押出成形等の工程によって、流動し、その後成形される温度にまで熱せられる。パッド材料は熱硬化性樹脂でよく、この場合、反応成分が一緒に混ぜられて、モールド中でその混合物が硬化する温度まで熱せられる。もし成形物であるシートが所望の厚さに合えば、そのままで研磨工程に使用することができる。あるいは、成形物である樹脂をスライスしてパッドシートを得ることもできる。
【0007】
透過窓だけを透過ではない不透過パッドに取り付けたいのならば、取り得る製造方法は、透過樹脂の棒やプラグから形成することである。つまり、不透過樹脂がまだ液体である間に、透過プラグと不透過の樹脂の間が完全に接触しているのを確かめながら、この成形物をモールド中の不透過樹脂に挿入する。不透過樹脂が硬化したのちモールドから取り出して、透過窓を有するパッド用シートをその成形物からスライスする。
【0008】
アメリカ特許第5,489,233号で見られるとおり、スラリー粒子を吸収したり輸送したりするという本質的能力のない樹脂シートからなる集積回路搭載ウェーハのケミカル−メカニカルポリシングに有用なパッドは、使用に際しては、表面に大フロー溝と小フロー溝の両方を持つパターンやテクスチャーを持っていなくてはならない。従って、研磨パッドの透過部分を通してインシチューブ光学測定をする際、これらフロー溝には少量のスラリーによる干渉が生じる。この干渉は補正できる。この溝中のスラリーは比較的均一なので、ウェーハ表面の変化を測定する信号には影響ない。
【0009】
集積回路搭載ウェーハのケミカル−メカニカル ポリシングに現在使われているどのタイプの研磨パッドにも窓を挿入することが可能である。これらパッドのタイプの例としては、ウレタン含浸ポリエステルフェルト、デラウェア州ニューワークのロデールインコーポレイテッド(Rodel,Inc.)のポリテックス(Politex)の名で販売されているタイプのマイクロポーラスウレタンパッド、そして、同じくデラウェア州ニューワークのロデールインコーポレイテッドによって製造されているICシリーズやMHシリーズといったような充填および/または発泡(blown)構造ウレタンがある。このようなパッドは、スラリー粒子の吸収、輸送という本質的能力のない硬質均一樹脂シートで構成されるものではない。これらは、小孔を有するという特性により、本質的にスラリーの輸送ができるのである。これらパッドのどれであってもそこに穴をあけて、そこに硬質透過樹脂のプラグを、光学的終点検出用窓としての役割を果たすため挿入することができる。硬質樹脂プラグの表面は、アメリカ特許第5,489,233号で記載されているような表面テクスチャーやパターンを持つことが最適であり、そうすることによって、研磨活動は研磨パッド全体にわたってほぼ均一になる。
【0010】
前述の樹脂(ポリウレタン、アクリル、ポリカーボネート、ナイロン、ポリエステル)に加えて、ポリ塩化ビニル、ポリふっ化ビニリデン、ポリエーテルサルホン、ポリスチレン、ポリエチレン、ポリテトラフルオロエチレンなども透過窓を作ることができる。これら樹脂を注型あるいは押出形成し、所望のサイズや厚さにカットすることによって、透過窓を作ることができる。

Claims (2)

  1. 光学的方法を用いるインシチュ終点検出に有用であり、かつ集積回路搭載ウェーハの研磨に有用なパッドであって、
    前記パッドが、第一の樹脂からなる第一の部分と、第二の樹脂からなる第二の部分とを含み、
    前記第一の部分が、スラリー粒子の吸収、輸送という本質的な能力を持たず、かつ190〜3500nmの範囲の波長の光線が透過する、硬質均一樹脂シートからなり、
    前記パッドが、外部手段によって、前記第一の部分及び前記第二の部分の表面上に設けられる、フロー溝を有する表面テクスチャーを有し、前記フロー溝がスラリー粒子の吸収、輸送という本質的な能力を与える、
    パッド。
  2. 前記第一の部分が、ポリウレタン、アクリル、ポリカーボネイト、ナイロン又はポリエステルからなる、請求項1記載のパッド。
JP50955797A 1995-08-21 1996-08-20 研磨パッド Expired - Lifetime JP3691852B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/517,578 US5605760A (en) 1995-08-21 1995-08-21 Polishing pads
US08/517,578 1995-08-21
PCT/US1996/013443 WO1997006921A1 (en) 1995-08-21 1996-08-20 Polishing pads

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005112423A Division JP4019087B2 (ja) 1995-08-21 2005-04-08 研磨パッドの製造方法及び研磨パッド

Publications (2)

Publication Number Publication Date
JPH11512977A JPH11512977A (ja) 1999-11-09
JP3691852B2 true JP3691852B2 (ja) 2005-09-07

Family

ID=24060375

Family Applications (5)

Application Number Title Priority Date Filing Date
JP50955797A Expired - Lifetime JP3691852B2 (ja) 1995-08-21 1996-08-20 研磨パッド
JP2005112423A Expired - Lifetime JP4019087B2 (ja) 1995-08-21 2005-04-08 研磨パッドの製造方法及び研磨パッド
JP2007206070A Expired - Lifetime JP4714715B2 (ja) 1995-08-21 2007-08-08 研磨パッドの製造方法及び研磨パッド
JP2009247447A Expired - Lifetime JP5016655B2 (ja) 1995-08-21 2009-10-28 研磨パッド
JP2012041145A Expired - Lifetime JP5461603B2 (ja) 1995-08-21 2012-02-28 研磨パッド

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2005112423A Expired - Lifetime JP4019087B2 (ja) 1995-08-21 2005-04-08 研磨パッドの製造方法及び研磨パッド
JP2007206070A Expired - Lifetime JP4714715B2 (ja) 1995-08-21 2007-08-08 研磨パッドの製造方法及び研磨パッド
JP2009247447A Expired - Lifetime JP5016655B2 (ja) 1995-08-21 2009-10-28 研磨パッド
JP2012041145A Expired - Lifetime JP5461603B2 (ja) 1995-08-21 2012-02-28 研磨パッド

Country Status (7)

Country Link
US (1) US5605760A (ja)
EP (2) EP0846040A4 (ja)
JP (5) JP3691852B2 (ja)
KR (1) KR100422603B1 (ja)
CN (1) CN1068814C (ja)
TW (1) TW340082B (ja)
WO (1) WO1997006921A1 (ja)

Families Citing this family (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5823853A (en) * 1996-07-18 1998-10-20 Speedfam Corporation Apparatus for the in-process detection of workpieces with a monochromatic light source
US5733171A (en) * 1996-07-18 1998-03-31 Speedfam Corporation Apparatus for the in-process detection of workpieces in a CMP environment
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) * 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US6676717B1 (en) * 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6876454B1 (en) * 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
EP0738561B1 (en) * 1995-03-28 2002-01-23 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations
US6537133B1 (en) * 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
JPH09254027A (ja) * 1996-03-25 1997-09-30 Chiyoda Kk 研磨用マウンテン材
US6074287A (en) * 1996-04-12 2000-06-13 Nikon Corporation Semiconductor wafer polishing apparatus
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US6287185B1 (en) 1997-04-04 2001-09-11 Rodel Holdings Inc. Polishing pads and methods relating thereto
US6682402B1 (en) * 1997-04-04 2004-01-27 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6736714B2 (en) 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
TW421620B (en) * 1997-12-03 2001-02-11 Siemens Ag Device and method to control an end-point during polish of components (especially semiconductor components)
US6332470B1 (en) 1997-12-30 2001-12-25 Boris Fishkin Aerosol substrate cleaner
US6068539A (en) * 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6248000B1 (en) * 1998-03-24 2001-06-19 Nikon Research Corporation Of America Polishing pad thinning to optically access a semiconductor wafer surface
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US7718102B2 (en) * 1998-06-02 2010-05-18 Praxair S.T. Technology, Inc. Froth and method of producing froth
US6395130B1 (en) 1998-06-08 2002-05-28 Speedfam-Ipec Corporation Hydrophobic optical endpoint light pipes for chemical mechanical polishing
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
JP4484370B2 (ja) 1998-11-02 2010-06-16 アプライド マテリアルズ インコーポレイテッド 基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US6280289B1 (en) 1998-11-02 2001-08-28 Applied Materials, Inc. Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
US6908374B2 (en) 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
US6716085B2 (en) 2001-12-28 2004-04-06 Applied Materials Inc. Polishing pad with transparent window
US20040082271A1 (en) * 1999-01-25 2004-04-29 Wiswesser Andreas Norbert Polishing pad with window
US6247998B1 (en) 1999-01-25 2001-06-19 Applied Materials, Inc. Method and apparatus for determining substrate layer thickness during chemical mechanical polishing
US6190234B1 (en) 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6994607B2 (en) * 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6179709B1 (en) 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
DE60039054D1 (de) 1999-03-30 2008-07-10 Nikon Corp Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)
DE60035341D1 (de) * 1999-03-31 2007-08-09 Nikon Corp Polierkörper, poliermaschine, poliermaschinenjustierverfahren, dicken- oder endpunkt-messverfahren für die polierte schicht, herstellungsverfahren eines halbleiterbauelementes
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
US20040072518A1 (en) * 1999-04-02 2004-04-15 Applied Materials, Inc. Platen with patterned surface for chemical mechanical polishing
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6224460B1 (en) * 1999-06-30 2001-05-01 Vlsi Technology, Inc. Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process
US6171181B1 (en) 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
KR100445045B1 (ko) * 1999-08-27 2004-08-18 아사히 가세이 일렉트로닉스 가부시끼가이샤 연마패드 및 연마장치
US6406363B1 (en) 1999-08-31 2002-06-18 Lam Research Corporation Unsupported chemical mechanical polishing belt
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6299516B1 (en) 1999-09-28 2001-10-09 Applied Materials, Inc. Substrate polishing article
US6399501B2 (en) * 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
US20020068516A1 (en) * 1999-12-13 2002-06-06 Applied Materials, Inc Apparatus and method for controlled delivery of slurry to a region of a polishing device
US6241596B1 (en) 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
US6533645B2 (en) 2000-01-18 2003-03-18 Applied Materials, Inc. Substrate polishing article
US6607428B2 (en) 2000-01-18 2003-08-19 Applied Materials, Inc. Material for use in carrier and polishing pads
US6506097B1 (en) 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process
US6623341B2 (en) 2000-01-18 2003-09-23 Applied Materials, Inc. Substrate polishing apparatus
US6383058B1 (en) 2000-01-28 2002-05-07 Applied Materials, Inc. Adaptive endpoint detection for chemical mechanical polishing
US6309276B1 (en) 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
US7059948B2 (en) * 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
JP2003524300A (ja) * 2000-02-25 2003-08-12 ロデール ホールディングス インコーポレイテッド 透明部分のある研磨パッド
US6860793B2 (en) 2000-03-15 2005-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window portion with an adjusted rate of wear
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
US7374477B2 (en) * 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6561891B2 (en) 2000-05-23 2003-05-13 Rodel Holdings, Inc. Eliminating air pockets under a polished pad
US6736709B1 (en) 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6685537B1 (en) * 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
JP2002001647A (ja) * 2000-06-19 2002-01-08 Rodel Nitta Co 研磨パッド
WO2002002274A2 (en) 2000-06-30 2002-01-10 Rodel Holdings, Inc. Base-pad for a polishing pad
US6495464B1 (en) * 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
US6878038B2 (en) 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
JP2002036129A (ja) * 2000-07-25 2002-02-05 Roki Techno Co Ltd 研磨パッド及びその製造方法
US6602724B2 (en) 2000-07-27 2003-08-05 Applied Materials, Inc. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
EP1319244A1 (en) * 2000-09-20 2003-06-18 Kla-Tencor Inc. Methods and systems for semiconductor fabrication processes
AU2001291143A1 (en) 2000-10-06 2002-04-22 Cabot Microelectronics Corporation Polishing pad comprising a filled translucent region
US20020072296A1 (en) 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
US6688956B1 (en) * 2000-11-29 2004-02-10 Psiloquest Inc. Substrate polishing device and method
US6609961B2 (en) 2001-01-09 2003-08-26 Lam Research Corporation Chemical mechanical planarization belt assembly and method of assembly
US6840843B2 (en) 2001-03-01 2005-01-11 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
DE60228784D1 (de) 2001-04-25 2008-10-23 Jsr Corp Lichtduchlässiges Polierkissen für eine Halbleiterschleife
US6966816B2 (en) 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
WO2002102547A1 (en) * 2001-06-15 2002-12-27 Rodel Holdings, Inc. Polishing apparatus that provides a window
JP4131632B2 (ja) * 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
JP4570286B2 (ja) * 2001-07-03 2010-10-27 ニッタ・ハース株式会社 研磨パッド
JP2003133270A (ja) 2001-10-26 2003-05-09 Jsr Corp 化学機械研磨用窓材及び研磨パッド
US6586337B2 (en) * 2001-11-09 2003-07-01 Speedfam-Ipec Corporation Method and apparatus for endpoint detection during chemical mechanical polishing
US6811466B1 (en) * 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US6942546B2 (en) 2002-01-17 2005-09-13 Asm Nutool, Inc. Endpoint detection for non-transparent polishing member
US6722946B2 (en) * 2002-01-17 2004-04-20 Nutool, Inc. Advanced chemical mechanical polishing system with smart endpoint detection
US6878039B2 (en) 2002-01-28 2005-04-12 Speedfam-Ipec Corporation Polishing pad window for a chemical-mechanical polishing tool
US7175503B2 (en) * 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
US6852020B2 (en) * 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US7037184B2 (en) * 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20030194959A1 (en) * 2002-04-15 2003-10-16 Cabot Microelectronics Corporation Sintered polishing pad with regions of contrasting density
KR20030086655A (ko) * 2002-05-06 2003-11-12 삼성전자주식회사 연마 종점을 검출하기 위한 장치 및 이를 갖는 화학적기계적 연마장치
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US20040171339A1 (en) * 2002-10-28 2004-09-02 Cabot Microelectronics Corporation Microporous polishing pads
US7040957B2 (en) * 2002-08-14 2006-05-09 Novellus Systems Inc. Platen and manifold for polishing workpieces
KR100465649B1 (ko) * 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
US7435165B2 (en) 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7311862B2 (en) 2002-10-28 2007-12-25 Cabot Microelectronics Corporation Method for manufacturing microporous CMP materials having controlled pore size
US7267607B2 (en) 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
TWI220405B (en) * 2002-11-19 2004-08-21 Iv Technologies Co Ltd Method of fabricating a polishing pad having a detection window thereon
WO2004049417A1 (ja) 2002-11-27 2004-06-10 Toyo Tire & Rubber Co., Ltd. 研磨パッド及び半導体デバイスの製造方法
JP4620331B2 (ja) * 2003-01-31 2011-01-26 ニッタ・ハース株式会社 研磨パッド及び研磨パッドの製造方法
US7008295B2 (en) * 2003-02-04 2006-03-07 Applied Materials Inc. Substrate monitoring during chemical mechanical polishing
US6832947B2 (en) * 2003-02-10 2004-12-21 Cabot Microelectronics Corporation CMP pad with composite transparent window
US6960120B2 (en) 2003-02-10 2005-11-01 Cabot Microelectronics Corporation CMP pad with composite transparent window
US7141155B2 (en) * 2003-02-18 2006-11-28 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
EP1610929B1 (en) 2003-03-25 2014-10-22 NexPlanar Corporation Method for customizing a polish pads for chemical mechanical planarization (cmp)
KR100771738B1 (ko) * 2003-04-03 2007-10-30 히다치 가세고교 가부시끼가이샤 연마패드, 그 제조방법 및 그것을 이용한 연마방법
US7238097B2 (en) * 2003-04-11 2007-07-03 Nihon Microcoating Co., Ltd. Polishing pad and method of producing same
JP2004319584A (ja) * 2003-04-11 2004-11-11 Nihon Micro Coating Co Ltd 研磨パッド及びその製造方法
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6997777B2 (en) 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmissive region
US6884156B2 (en) 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US7086932B2 (en) * 2004-05-11 2006-08-08 Freudenberg Nonwovens Polishing pad
CN100352605C (zh) 2003-07-17 2007-12-05 Jsr株式会社 化学机械抛光垫以及化学机械抛光方法
US7153185B1 (en) 2003-08-18 2006-12-26 Applied Materials, Inc. Substrate edge detection
US7097537B1 (en) 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
US7195539B2 (en) * 2003-09-19 2007-03-27 Cabot Microelectronics Coporation Polishing pad with recessed window
US7264536B2 (en) * 2003-09-23 2007-09-04 Applied Materials, Inc. Polishing pad with window
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US20050173259A1 (en) * 2004-02-06 2005-08-11 Applied Materials, Inc. Endpoint system for electro-chemical mechanical polishing
US7186651B2 (en) * 2003-10-30 2007-03-06 Texas Instruments Incorporated Chemical mechanical polishing method and apparatus
US6984163B2 (en) * 2003-11-25 2006-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with high optical transmission window
US7132033B2 (en) * 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
US7731568B2 (en) 2004-03-11 2010-06-08 Toyo Tire & Rubber Co., Ltd. Polishing pad and semiconductor device manufacturing method
US7204742B2 (en) * 2004-03-25 2007-04-17 Cabot Microelectronics Corporation Polishing pad comprising hydrophobic region and endpoint detection port
CN100424830C (zh) 2004-04-23 2008-10-08 Jsr株式会社 用于抛光半导体晶片的抛光垫、层叠体和方法
US7018581B2 (en) * 2004-06-10 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a polishing pad with reduced stress window
US7252871B2 (en) * 2004-06-16 2007-08-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a pressure relief channel
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
KR101181786B1 (ko) 2004-12-10 2012-09-11 도요 고무 고교 가부시키가이샤 연마 패드 및 연마 패드의 제조 방법
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
TWI385050B (zh) * 2005-02-18 2013-02-11 Nexplanar Corp 用於cmp之特製拋光墊及其製造方法及其用途
US20070037487A1 (en) * 2005-08-10 2007-02-15 Kuo Charles C Polishing pad having a sealed pressure relief channel
US7210980B2 (en) 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
KR101294863B1 (ko) * 2006-02-06 2013-08-08 도레이 카부시키가이샤 연마 패드 및 연마 장치
US7601050B2 (en) * 2006-02-15 2009-10-13 Applied Materials, Inc. Polishing apparatus with grooved subpad
WO2007104063A1 (en) * 2006-03-09 2007-09-13 Rimpad Tech Ltd. Composite polishing pad
CN102672630B (zh) 2006-04-19 2015-03-18 东洋橡胶工业株式会社 抛光垫的制造方法
JP2007307639A (ja) * 2006-05-17 2007-11-29 Toyo Tire & Rubber Co Ltd 研磨パッド
JP5110677B2 (ja) * 2006-05-17 2012-12-26 東洋ゴム工業株式会社 研磨パッド
JP4931133B2 (ja) * 2007-03-15 2012-05-16 東洋ゴム工業株式会社 研磨パッド
JP4971028B2 (ja) * 2007-05-16 2012-07-11 東洋ゴム工業株式会社 研磨パッドの製造方法
JP4943233B2 (ja) * 2007-05-31 2012-05-30 東洋ゴム工業株式会社 研磨パッドの製造方法
DE102008045216A1 (de) 2007-08-23 2009-04-09 Technische Universität Dresden Verfahren und Anordnung zum Erkennen des Endpunktes beim Polieren von eingebetteten SiN-Strukturen auf Halbleiterwafern
US8337278B2 (en) * 2007-09-24 2012-12-25 Applied Materials, Inc. Wafer edge characterization by successive radius measurements
WO2009070352A1 (en) * 2007-11-30 2009-06-04 Innopad, Inc. Chemical-mechanical planarization pad having end point detection window
US20090305610A1 (en) * 2008-06-06 2009-12-10 Applied Materials, Inc. Multiple window pad assembly
US7967661B2 (en) * 2008-06-19 2011-06-28 Micron Technology, Inc. Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture
JP5142866B2 (ja) * 2008-07-16 2013-02-13 富士紡ホールディングス株式会社 研磨パッド
US8118644B2 (en) * 2008-10-16 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having integral identification feature
US8118641B2 (en) * 2009-03-04 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having window with integral identification feature
US8257544B2 (en) * 2009-06-10 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having a low defect integral window
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
US8697217B2 (en) 2010-01-15 2014-04-15 Rohm and Haas Electronics Materials CMP Holdings, Inc. Creep-resistant polishing pad window
US9156124B2 (en) * 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
US8257545B2 (en) 2010-09-29 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
US8758659B2 (en) 2010-09-29 2014-06-24 Fns Tech Co., Ltd. Method of grooving a chemical-mechanical planarization pad
US8657653B2 (en) 2010-09-30 2014-02-25 Nexplanar Corporation Homogeneous polishing pad for eddy current end-point detection
US8628384B2 (en) * 2010-09-30 2014-01-14 Nexplanar Corporation Polishing pad for eddy current end-point detection
KR101602544B1 (ko) * 2010-11-18 2016-03-10 캐보트 마이크로일렉트로닉스 코포레이션 투과성 영역을 포함하는 연마 패드
US9133299B2 (en) 2011-07-15 2015-09-15 Lg Chem, Ltd. Poly-urethane resin and poly-urethane absorbing pad using the same
KR101277296B1 (ko) 2011-07-15 2013-06-20 주식회사 엘지화학 폴리우레탄 수지 조성물 및 이를 이용한 폴리우레탄 흡착 패드
CN102248462A (zh) * 2011-07-25 2011-11-23 成都光明光电股份有限公司 抛光磨具
US10722997B2 (en) 2012-04-02 2020-07-28 Thomas West, Inc. Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
TWI671161B (zh) 2012-04-02 2019-09-11 美商湯瑪士衛斯有限公司 用於離心鑄造聚合物拋光墊之方法及系統及由該方法製得之拋光墊
US10022842B2 (en) 2012-04-02 2018-07-17 Thomas West, Inc. Method and systems to control optical transmissivity of a polish pad material
US9156125B2 (en) 2012-04-11 2015-10-13 Cabot Microelectronics Corporation Polishing pad with light-stable light-transmitting region
US20140256231A1 (en) 2013-03-07 2014-09-11 Dow Global Technologies Llc Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window
US9186772B2 (en) 2013-03-07 2015-11-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with broad spectrum, endpoint detection window and method of polishing therewith
US9216489B2 (en) 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9064806B1 (en) 2014-03-28 2015-06-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Soft and conditionable chemical mechanical polishing pad with window
US9259820B2 (en) 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9333620B2 (en) 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
SG11201703114QA (en) 2014-10-17 2017-06-29 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US9452507B2 (en) * 2014-12-19 2016-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-viscosity CMP casting method
US9446498B1 (en) 2015-03-13 2016-09-20 rohm and Hass Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing pad with window
US9475168B2 (en) 2015-03-26 2016-10-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad window
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US20180304539A1 (en) 2017-04-21 2018-10-25 Applied Materials, Inc. Energy delivery system with array of energy sources for an additive manufacturing apparatus
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
US10898986B2 (en) 2017-09-15 2021-01-26 Applied Materials, Inc. Chattering correction for accurate sensor position determination on wafer
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11638979B2 (en) 2020-06-09 2023-05-02 Applied Materials, Inc. Additive manufacturing of polishing pads
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11633830B2 (en) 2020-06-24 2023-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with uniform window
US20220203495A1 (en) 2020-12-29 2022-06-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with window having transparency at low wavelengths and material useful in such window
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
WO2022202059A1 (ja) * 2021-03-24 2022-09-29 富士紡ホールディングス株式会社 研磨パッドの製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728552A (en) * 1984-07-06 1988-03-01 Rodel, Inc. Substrate containing fibers of predetermined orientation and process of making the same
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
JPH01193166A (ja) * 1988-01-28 1989-08-03 Showa Denko Kk 半導体ウェハ鏡面研磨用パッド
JP2734007B2 (ja) * 1988-10-07 1998-03-30 ソニー株式会社 研磨装置および研磨方法
JPH02218561A (ja) * 1989-02-15 1990-08-31 Fujimi Kenmazai Kogyo Kk 研磨布の製造法
JPH03213265A (ja) * 1990-01-12 1991-09-18 Fujitsu Ltd ラップ盤の定盤
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5036015A (en) * 1990-09-24 1991-07-30 Micron Technology, Inc. Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
AU3781293A (en) * 1992-04-13 1993-11-18 Minnesota Mining And Manufacturing Company Abrasive article
JP2770101B2 (ja) * 1992-05-08 1998-06-25 コマツ電子金属株式会社 貼り合わせウェーハの研磨方法
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5216843A (en) * 1992-09-24 1993-06-08 Intel Corporation Polishing pad conditioning apparatus for wafer planarization process
US5337015A (en) * 1993-06-14 1994-08-09 International Business Machines Corporation In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage
JP3326443B2 (ja) * 1993-08-10 2002-09-24 株式会社ニコン ウエハ研磨方法及びその装置
US5413941A (en) * 1994-01-06 1995-05-09 Micron Technology, Inc. Optical end point detection methods in semiconductor planarizing polishing processes
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
EP0738561B1 (en) * 1995-03-28 2002-01-23 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations
JP2003145414A (ja) * 2001-11-13 2003-05-20 Toyobo Co Ltd 研磨パッド及びその製造方法
JP4420761B2 (ja) * 2004-07-27 2010-02-24 日華化学株式会社 研磨用シートの製造方法及び研磨用シート
JP2007063323A (ja) * 2005-08-29 2007-03-15 Dainippon Ink & Chem Inc 研磨パッド用ポリウレタン組成物及びそれを用いた研磨パッド
JP4971028B2 (ja) * 2007-05-16 2012-07-11 東洋ゴム工業株式会社 研磨パッドの製造方法
JP4943233B2 (ja) * 2007-05-31 2012-05-30 東洋ゴム工業株式会社 研磨パッドの製造方法

Also Published As

Publication number Publication date
CN1193932A (zh) 1998-09-23
JP2010017848A (ja) 2010-01-28
EP0846040A1 (en) 1998-06-10
US5605760A (en) 1997-02-25
CN1068814C (zh) 2001-07-25
EP0846040A4 (en) 1998-09-30
JP2007313645A (ja) 2007-12-06
KR100422603B1 (ko) 2004-05-31
JP2012109616A (ja) 2012-06-07
JP4714715B2 (ja) 2011-06-29
JP5016655B2 (ja) 2012-09-05
KR19990044003A (ko) 1999-06-25
EP1281477A1 (en) 2003-02-05
JPH11512977A (ja) 1999-11-09
TW340082B (en) 1998-09-11
JP2005210143A (ja) 2005-08-04
JP4019087B2 (ja) 2007-12-05
WO1997006921A1 (en) 1997-02-27
JP5461603B2 (ja) 2014-04-02

Similar Documents

Publication Publication Date Title
JP3691852B2 (ja) 研磨パッド
US7553214B2 (en) Polishing article with integrated window stripe
EP0921906B1 (en) Abrasive construction for semiconductor wafer modification
EP2523777B1 (en) Cmp pad with local area transparency
US6857941B2 (en) Multi-phase polishing pad
EP1502703B1 (en) Porous polyurethane polishing pads
KR100804344B1 (ko) 연마 패드
US8475228B2 (en) Polishing pad with partially recessed window
US20050054275A1 (en) Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
KR20050052513A (ko) 평탄화를 위한 윈도를 가진 연마 패드
US11541504B2 (en) Recycled polishing pad

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050408

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050617

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080624

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20170624

Year of fee payment: 12

EXPY Cancellation because of completion of term