JP3676240B2 - 圧接型半導体装置 - Google Patents

圧接型半導体装置 Download PDF

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Publication number
JP3676240B2
JP3676240B2 JP2001017405A JP2001017405A JP3676240B2 JP 3676240 B2 JP3676240 B2 JP 3676240B2 JP 2001017405 A JP2001017405 A JP 2001017405A JP 2001017405 A JP2001017405 A JP 2001017405A JP 3676240 B2 JP3676240 B2 JP 3676240B2
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JP
Japan
Prior art keywords
control signal
contact type
semiconductor device
electrode
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001017405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001298152A5 (https=
JP2001298152A (ja
Inventor
英太郎 三宅
暁 柳澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001017405A priority Critical patent/JP3676240B2/ja
Priority to US09/774,610 priority patent/US6605870B2/en
Publication of JP2001298152A publication Critical patent/JP2001298152A/ja
Publication of JP2001298152A5 publication Critical patent/JP2001298152A5/ja
Application granted granted Critical
Publication of JP3676240B2 publication Critical patent/JP3676240B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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  • Die Bonding (AREA)
JP2001017405A 2000-02-07 2001-01-25 圧接型半導体装置 Expired - Fee Related JP3676240B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001017405A JP3676240B2 (ja) 2000-02-07 2001-01-25 圧接型半導体装置
US09/774,610 US6605870B2 (en) 2000-02-07 2001-02-01 Pressure-contact type semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000029569 2000-02-07
JP2000-29569 2000-02-07
JP2001017405A JP3676240B2 (ja) 2000-02-07 2001-01-25 圧接型半導体装置

Publications (3)

Publication Number Publication Date
JP2001298152A JP2001298152A (ja) 2001-10-26
JP2001298152A5 JP2001298152A5 (https=) 2005-07-21
JP3676240B2 true JP3676240B2 (ja) 2005-07-27

Family

ID=26584997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001017405A Expired - Fee Related JP3676240B2 (ja) 2000-02-07 2001-01-25 圧接型半導体装置

Country Status (2)

Country Link
US (1) US6605870B2 (https=)
JP (1) JP3676240B2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7042086B2 (en) 2002-10-16 2006-05-09 Nissan Motor Co., Ltd. Stacked semiconductor module and assembling method of the same
JP4802210B2 (ja) * 2008-05-13 2011-10-26 株式会社東芝 マルチチップ圧接型半導体装置
JP2013008784A (ja) * 2011-06-23 2013-01-10 Mitsubishi Electric Corp 圧接型半導体装置
DE102013216709B4 (de) 2013-08-22 2021-03-25 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung
DE102013217801B4 (de) * 2013-09-05 2019-07-18 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung
DE102013217802B4 (de) * 2013-09-05 2020-01-09 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung
US9177943B2 (en) * 2013-10-15 2015-11-03 Ixys Corporation Power device cassette with auxiliary emitter contact
JP2016082105A (ja) * 2014-10-17 2016-05-16 株式会社東芝 半導体装置
CN108122895B (zh) * 2015-03-27 2021-07-27 英飞凌科技股份有限公司 具有芯片阵列的半导体组件
JP6359573B2 (ja) * 2016-01-19 2018-07-18 株式会社東芝 半導体装置
CN108379737B (zh) * 2018-03-21 2023-07-04 江西合力泰科技有限公司 一种脉冲治疗排线及其制造方法
JP7494613B2 (ja) 2020-07-17 2024-06-04 富士電機株式会社 半導体装置
JP7395452B2 (ja) * 2020-09-23 2023-12-11 株式会社東芝 半導体装置
JP7803811B2 (ja) * 2022-08-10 2026-01-21 株式会社東芝 半導体パッケージ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258200B2 (ja) 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
US6200407B1 (en) * 1994-08-18 2001-03-13 Rockwell Technologies, Llc Method of making a multilayer circuit board having a window exposing an enhanced conductive layer for use as an insulated mounting area
JP3319569B2 (ja) 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
GB9725960D0 (en) * 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips

Also Published As

Publication number Publication date
JP2001298152A (ja) 2001-10-26
US6605870B2 (en) 2003-08-12
US20010011757A1 (en) 2001-08-09

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