JP3622492B2 - 薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置の製造方法 Download PDFInfo
- Publication number
- JP3622492B2 JP3622492B2 JP08465898A JP8465898A JP3622492B2 JP 3622492 B2 JP3622492 B2 JP 3622492B2 JP 08465898 A JP08465898 A JP 08465898A JP 8465898 A JP8465898 A JP 8465898A JP 3622492 B2 JP3622492 B2 JP 3622492B2
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- JP
- Japan
- Prior art keywords
- thin film
- gate insulating
- film
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 120
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 25
- 239000010408 film Substances 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 43
- 239000001257 hydrogen Substances 0.000 claims description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000137 annealing Methods 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- -1 fluorine ions Chemical class 0.000 claims description 20
- 239000000460 chlorine Substances 0.000 claims description 15
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- 239000011737 fluorine Substances 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 45
- 229920005591 polysilicon Polymers 0.000 description 44
- 230000007547 defect Effects 0.000 description 29
- 239000013078 crystal Substances 0.000 description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 238000005224 laser annealing Methods 0.000 description 10
- 238000005984 hydrogenation reaction Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
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- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08465898A JP3622492B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08465898A JP3622492B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11284193A JPH11284193A (ja) | 1999-10-15 |
| JPH11284193A5 JPH11284193A5 (enExample) | 2004-08-05 |
| JP3622492B2 true JP3622492B2 (ja) | 2005-02-23 |
Family
ID=13836830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08465898A Expired - Fee Related JP3622492B2 (ja) | 1998-03-30 | 1998-03-30 | 薄膜半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3622492B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408510A (zh) * | 2015-03-25 | 2017-11-28 | 凸版印刷株式会社 | 薄膜晶体管、薄膜晶体管的制造方法及使用了薄膜晶体管的图像显示装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3806596B2 (ja) * | 1999-12-27 | 2006-08-09 | 三洋電機株式会社 | 表示装置およびその製造方法 |
| JP4896286B2 (ja) * | 2000-01-07 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2002124678A (ja) * | 2000-10-13 | 2002-04-26 | Sony Corp | 薄膜トランジスタの製造方法 |
| JP4689155B2 (ja) * | 2002-08-29 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2006019609A (ja) * | 2004-07-05 | 2006-01-19 | Hitachi Displays Ltd | 画像表示装置 |
-
1998
- 1998-03-30 JP JP08465898A patent/JP3622492B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408510A (zh) * | 2015-03-25 | 2017-11-28 | 凸版印刷株式会社 | 薄膜晶体管、薄膜晶体管的制造方法及使用了薄膜晶体管的图像显示装置 |
| CN107408510B (zh) * | 2015-03-25 | 2021-06-15 | 凸版印刷株式会社 | 薄膜晶体管、薄膜晶体管的制造方法及使用了薄膜晶体管的图像显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11284193A (ja) | 1999-10-15 |
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