JP3578155B2 - 被処理体の酸化方法 - Google Patents

被処理体の酸化方法 Download PDF

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Publication number
JP3578155B2
JP3578155B2 JP2002197671A JP2002197671A JP3578155B2 JP 3578155 B2 JP3578155 B2 JP 3578155B2 JP 2002197671 A JP2002197671 A JP 2002197671A JP 2002197671 A JP2002197671 A JP 2002197671A JP 3578155 B2 JP3578155 B2 JP 3578155B2
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JP
Japan
Prior art keywords
film
oxidizing
gas
thickness
oxidation
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Expired - Lifetime
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JP2002197671A
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English (en)
Japanese (ja)
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JP2004039990A (ja
Inventor
辰夫 西田
司 米川
鈴木　　啓介
享 佐藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002197671A priority Critical patent/JP3578155B2/ja
Priority to TW092118381A priority patent/TW200402790A/zh
Priority to PCT/JP2003/008609 priority patent/WO2004006322A1/ja
Priority to US10/519,451 priority patent/US7304002B2/en
Priority to KR1020047021595A priority patent/KR101033399B1/ko
Publication of JP2004039990A publication Critical patent/JP2004039990A/ja
Application granted granted Critical
Publication of JP3578155B2 publication Critical patent/JP3578155B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2002197671A 2002-07-05 2002-07-05 被処理体の酸化方法 Expired - Lifetime JP3578155B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002197671A JP3578155B2 (ja) 2002-07-05 2002-07-05 被処理体の酸化方法
TW092118381A TW200402790A (en) 2002-07-05 2003-07-04 Method of oxidizing member to be treated
PCT/JP2003/008609 WO2004006322A1 (ja) 2002-07-05 2003-07-07 被処理体の酸化方法
US10/519,451 US7304002B2 (en) 2002-07-05 2003-07-07 Method of oxidizing member to be treated
KR1020047021595A KR101033399B1 (ko) 2002-07-05 2003-07-07 피처리체의 산화방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002197671A JP3578155B2 (ja) 2002-07-05 2002-07-05 被処理体の酸化方法

Publications (2)

Publication Number Publication Date
JP2004039990A JP2004039990A (ja) 2004-02-05
JP3578155B2 true JP3578155B2 (ja) 2004-10-20

Family

ID=30112407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002197671A Expired - Lifetime JP3578155B2 (ja) 2002-07-05 2002-07-05 被処理体の酸化方法

Country Status (5)

Country Link
US (1) US7304002B2 (https=)
JP (1) JP3578155B2 (https=)
KR (1) KR101033399B1 (https=)
TW (1) TW200402790A (https=)
WO (1) WO2004006322A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100766196B1 (ko) * 2003-08-26 2007-10-10 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
JP4238812B2 (ja) * 2003-11-20 2009-03-18 東京エレクトロン株式会社 被処理体の酸化装置
JP4586544B2 (ja) * 2004-02-17 2010-11-24 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2010087167A (ja) * 2008-09-30 2010-04-15 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5573772B2 (ja) 2010-06-22 2014-08-20 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6127770B2 (ja) * 2013-06-24 2017-05-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6512860B2 (ja) * 2015-02-24 2019-05-15 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP6304410B2 (ja) * 2017-01-26 2018-04-04 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6919350B2 (ja) * 2017-06-09 2021-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102895989B1 (ko) * 2020-12-15 2025-12-04 주식회사 원익아이피에스 산화막 형성 방법 및 장치
KR20240044860A (ko) * 2022-09-29 2024-04-05 (주)이큐테크플러스 고밀도 라디컬을 이용하여 계면을 질화하는 기법이 적용된 박막 생성 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571232A (en) 1980-06-04 1982-01-06 Mitsubishi Electric Corp Oxide film forming device
JP2902012B2 (ja) 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
US6114258A (en) 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
JP2001274154A (ja) 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
KR100560867B1 (ko) 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
JP2002353214A (ja) 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20060094248A1 (en) 2006-05-04
JP2004039990A (ja) 2004-02-05
US7304002B2 (en) 2007-12-04
KR20050016682A (ko) 2005-02-21
TW200402790A (en) 2004-02-16
TWI324364B (https=) 2010-05-01
WO2004006322A1 (ja) 2004-01-15
KR101033399B1 (ko) 2011-05-09

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