TW200402790A - Method of oxidizing member to be treated - Google Patents

Method of oxidizing member to be treated Download PDF

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Publication number
TW200402790A
TW200402790A TW092118381A TW92118381A TW200402790A TW 200402790 A TW200402790 A TW 200402790A TW 092118381 A TW092118381 A TW 092118381A TW 92118381 A TW92118381 A TW 92118381A TW 200402790 A TW200402790 A TW 200402790A
Authority
TW
Taiwan
Prior art keywords
film
oxidation
nitride film
oxidizing
gas
Prior art date
Application number
TW092118381A
Other languages
English (en)
Chinese (zh)
Other versions
TWI324364B (https=
Inventor
Tatsuo Nishita
Tsukasa Yonekawa
Keisuke Suzuki
Toru Sato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200402790A publication Critical patent/TW200402790A/zh
Application granted granted Critical
Publication of TWI324364B publication Critical patent/TWI324364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW092118381A 2002-07-05 2003-07-04 Method of oxidizing member to be treated TW200402790A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002197671A JP3578155B2 (ja) 2002-07-05 2002-07-05 被処理体の酸化方法

Publications (2)

Publication Number Publication Date
TW200402790A true TW200402790A (en) 2004-02-16
TWI324364B TWI324364B (https=) 2010-05-01

Family

ID=30112407

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118381A TW200402790A (en) 2002-07-05 2003-07-04 Method of oxidizing member to be treated

Country Status (5)

Country Link
US (1) US7304002B2 (https=)
JP (1) JP3578155B2 (https=)
KR (1) KR101033399B1 (https=)
TW (1) TW200402790A (https=)
WO (1) WO2004006322A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100766196B1 (ko) * 2003-08-26 2007-10-10 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
JP4238812B2 (ja) * 2003-11-20 2009-03-18 東京エレクトロン株式会社 被処理体の酸化装置
JP4586544B2 (ja) * 2004-02-17 2010-11-24 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2010087167A (ja) * 2008-09-30 2010-04-15 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5573772B2 (ja) 2010-06-22 2014-08-20 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6127770B2 (ja) * 2013-06-24 2017-05-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6512860B2 (ja) * 2015-02-24 2019-05-15 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP6304410B2 (ja) * 2017-01-26 2018-04-04 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6919350B2 (ja) * 2017-06-09 2021-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102895989B1 (ko) * 2020-12-15 2025-12-04 주식회사 원익아이피에스 산화막 형성 방법 및 장치
KR20240044860A (ko) * 2022-09-29 2024-04-05 (주)이큐테크플러스 고밀도 라디컬을 이용하여 계면을 질화하는 기법이 적용된 박막 생성 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571232A (en) 1980-06-04 1982-01-06 Mitsubishi Electric Corp Oxide film forming device
JP2902012B2 (ja) 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
US6114258A (en) 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
JP2001274154A (ja) 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
KR100560867B1 (ko) 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
JP2002353214A (ja) 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20060094248A1 (en) 2006-05-04
JP2004039990A (ja) 2004-02-05
US7304002B2 (en) 2007-12-04
KR20050016682A (ko) 2005-02-21
TWI324364B (https=) 2010-05-01
WO2004006322A1 (ja) 2004-01-15
JP3578155B2 (ja) 2004-10-20
KR101033399B1 (ko) 2011-05-09

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