JP3553196B2 - Ｓｏｉ基板の製造方法 - Google Patents

Ｓｏｉ基板の製造方法 Download PDF

Info

Publication number
JP3553196B2
JP3553196B2 JP10990895A JP10990895A JP3553196B2 JP 3553196 B2 JP3553196 B2 JP 3553196B2 JP 10990895 A JP10990895 A JP 10990895A JP 10990895 A JP10990895 A JP 10990895A JP 3553196 B2 JP3553196 B2 JP 3553196B2
Authority
JP
Japan
Prior art keywords
substrate
active substrate
bonded
active
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10990895A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08274286A (ja
Inventor
雄一 中吉
正 小川
明洋 石井
Original Assignee
コマツ電子金属株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コマツ電子金属株式会社 filed Critical コマツ電子金属株式会社
Priority to JP10990895A priority Critical patent/JP3553196B2/ja
Priority to TW85103834A priority patent/TW300318B/zh
Publication of JPH08274286A publication Critical patent/JPH08274286A/ja
Application granted granted Critical
Publication of JP3553196B2 publication Critical patent/JP3553196B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
JP10990895A 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法 Expired - Lifetime JP3553196B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10990895A JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法
TW85103834A TW300318B (enrdf_load_stackoverflow) 1995-03-29 1996-04-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10990895A JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法

Publications (2)

Publication Number Publication Date
JPH08274286A JPH08274286A (ja) 1996-10-18
JP3553196B2 true JP3553196B2 (ja) 2004-08-11

Family

ID=14522207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10990895A Expired - Lifetime JP3553196B2 (ja) 1995-03-29 1995-03-29 Ｓｏｉ基板の製造方法

Country Status (2)

Country Link
JP (1) JP3553196B2 (enrdf_load_stackoverflow)
TW (1) TW300318B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964321A (ja) * 1995-08-24 1997-03-07 Komatsu Electron Metals Co Ltd Ｓｏｉ基板の製造方法
US6090688A (en) * 1996-11-15 2000-07-18 Komatsu Electronic Metals Co., Ltd. Method for fabricating an SOI substrate
JP3672436B2 (ja) 1998-05-19 2005-07-20 シャープ株式会社 太陽電池セルの製造方法
JP3944087B2 (ja) 2003-01-21 2007-07-11 株式会社東芝 素子形成用基板の製造方法
WO2010059556A1 (en) * 2008-11-19 2010-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8035962B2 (en) 2010-03-03 2011-10-11 Antec, Inc. Computer hot-plug structure
JP7187115B2 (ja) * 2018-12-04 2022-12-12 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
TW300318B (enrdf_load_stackoverflow) 1997-03-11
JPH08274286A (ja) 1996-10-18

Similar Documents

Publication Publication Date Title
JP3352896B2 (ja) 貼り合わせ基板の作製方法
JPH0964321A (ja) Ｓｏｉ基板の製造方法
EP0935280A1 (en) SOI substrate and method of manufacturing the same
US6090688A (en) Method for fabricating an SOI substrate
JPH0636414B2 (ja) 半導体素子形成用基板の製造方法
JP2001326206A (ja) 半導体ウエーハの薄型化方法及び薄型半導体ウエーハ
EP1507292A4 (en) LAMINATED SUBSTRATE, METHOD FOR MANUFACTURING SUBSTRATE, AND PRINTING JIG FOR EXTERNAL PERIPHERY OF PLATELETS USED THEREIN
JPH11219873A (ja) 単結晶シリコンウェーハの機械抵抗の改善
JPH1022184A (ja) 基板張り合わせ装置
JPH10223497A (ja) 貼り合わせ基板の作製方法
JP3553196B2 (ja) Ｓｏｉ基板の製造方法
JP2662495B2 (ja) 接着半導体基板の製造方法
JPH0917984A (ja) 貼り合わせｓｏｉ基板の製造方法
JPH08274285A (ja) Ｓｏｉ基板及びその製造方法
JPH08107092A (ja) Ｓｏｉ基板の製造方法
JPH0897111A (ja) Ｓｏｉ基板の製造方法
JP3422225B2 (ja) 貼り合わせ半導体基板及びその製造方法
JP2001085453A (ja) 半導体装置の製造方法
JPH01302837A (ja) 半導体基板の製造方法
JP2003151939A (ja) Ｓｏｉ基板の製造方法
JP3798760B2 (ja) 半導体ウェハの形成方法
CN114496774A (zh) 晶圆背面减薄方法
JP3996557B2 (ja) 半導体接合ウエーハの製造方法
JPS62264864A (ja) 基体の研摩方法
JPH0387012A (ja) 接合ウエハおよびその製造方法

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040413

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040428

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090514

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090514

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100514

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110514

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110514

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120514

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130514

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140514

Year of fee payment: 10

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term