JP3521721B2 - Electronic component mounting method and device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component mounting method, and more particularly to an electronic component mounting method and apparatus for mounting an electronic component on a glass substrate or the like via an anisotropic conductive film.

[0002]

2. Description of the Related Art Conventionally, a liquid crystal display device (LCD) is a so-called CO, in which a semiconductor integrated circuit having a liquid crystal drive circuit is directly mounted on a glass substrate (liquid crystal panel) sandwiching liquid crystal.
It is manufactured by a method called G (Chip On Glass), and is performed by the process shown in FIG.

First, as shown in step 110 of FIG. 6, a liquid crystal panel as a base material is subjected to an acceptance inspection to accept the liquid crystal panel. Then, the liquid crystal panel is subjected to wet cleaning with a detergent or pure water to remove the dirt of the inorganic substances (step 111). Next, the liquid crystal panel is placed in a vacuum chamber, the vacuum chamber is depressurized to generate plasma by oxygen gas, and as shown in step 112,
Contaminating organic substances are removed by cleaning with plasma.

A liquid crystal panel that has been subjected to wet cleaning and plasma cleaning has an anisotropic conductive film (anistro) at predetermined locations.
A pic conductive film (ACF) is attached (step 113). The sticking of the anisotropic conductive film is performed by heating the anisotropic conductive film to a temperature of 60 to 90 ° C. and applying a force of about 10 kgf for about 1 second. Then, a semiconductor integrated circuit (IC), which is an electronic component equipped with a liquid crystal drive circuit, is placed on the anisotropic conductive film, and the anisotropic conductive film is attached to the liquid crystal panel under the same conditions as the temporary compression bonding of the IC. (Step 11
4). For the temporarily pressed IC, the anisotropic conductive film is heated to a temperature of about 200 ° C., and a surface pressure of about 30 to 40 kgf / cm 2 is applied for about 5 seconds. Mainly pressure-bonded to the conductive film.

After that, as shown in step 116,
After attaching a polarizing plate to the liquid crystal panel, a flexible printed circuit (Flexible Printed Circ)
(it: FPC) is crimped (step 117),
Mold the protective resin on the wiring part (step 11
8), inspect and send to the next process (step 119).

[0006]

However, in the above-mentioned conventional COG, the wet-cleaned liquid crystal panel is plasma-cleaned in vacuum to remove organic substances, and it takes time to vacuum the container. At the same time, there is no choice but to carry out batch processing to wash a plurality of panels at once, and it is not possible to achieve time consistency with subsequent processes.
This is an obstacle to cost reduction because in-line plasma cleaning cannot be performed. Further, not only is it troublesome to carry the liquid crystal panel into and out of the vacuum container, but also the plasma cleaning apparatus is expensive and large. Moreover, when the plasma-cleaned liquid crystal panel is taken out from the vacuum container and conveyed to the next ACF bonding step, it is necessary to maintain cleanliness in order to secure the adhesiveness of the anisotropic conductive film, and quality control is easy. Not. Then, due to contamination etc. during transportation of the panel after plasma cleaning to the next step,
It is difficult to reduce the defective rate because the adhesive strength of the anisotropic conductive film is reduced and peeling occurs.

The present invention has been made in order to solve the above-mentioned drawbacks of the prior art, and an object thereof is to enable in-line plasma cleaning.

Another object of the present invention is to improve the adhesive strength of the anisotropic conductive film and reduce the defective rate.

Another object of the present invention is to reduce the number of steps.

[0010]

According to the present invention, when a liquid crystal panel or the like is cleaned with plasma generated under atmospheric pressure or a pressure in the vicinity thereof, it is equivalent to conventional plasma cleaning in vacuum by short-time cleaning. It was made based on the finding that a cleaning effect is obtained, and in order to achieve the above-mentioned object, the mounting method of the electronic component according to the present invention is an electronic component using an anisotropic conductive film as a base material. In a method of mounting an electronic component in which electronic components are joined via a plasma cleaning process in which plasma is generated by a processing gas under atmospheric pressure or a pressure in the vicinity thereof and the base material is sequentially cleaned by the plasma, and a plasma cleaning process. Thermocompression-bonding to the base material sequentially sent to the base material via the anisotropic conductive film, and thermocompression-bonding an electronic component to the anisotropic conductive film bonded to the base material Those having a step, when generating the plasma is characterized by the application of superimposed voltage of a plurality of frequencies to the process gas.

In the present invention configured as described above, plasma is generated under atmospheric pressure or a pressure in the vicinity thereof, so that it is not necessary to carry a substrate for plasma cleaning into a vacuum container, and the substrate can be removed. Plasma cleaning can be performed in a short time in a continuously conveyed state, and in-line plasma cleaning can be easily performed. Moreover, since the base material cleaned by atmospheric pressure plasma can be sequentially sent to the thermocompression bonding process of the anisotropic conductive film, the anisotropic conductive film is attached while the base material is extremely clean, and the semiconductor chip (IC ) And other electronic components can be attached, and the adhesive strength between the base material and the anisotropic conductive film and between the anisotropic conductive film and the electronic component can be improved to prevent peeling and the like, and reduce the defect rate. be able to.

Atmospheric pressure plasma, for example, 13.56 MHz
When it is generated using a high frequency voltage such as, a high temperature plasma is obtained, and by cleaning the base material using this high temperature plasma, it is possible to use it for the residual heat of the step of pressure-bonding the anisotropic conductive film, The anisotropic conductive film can be pressure bonded in a shorter time. Further, when cleaning is performed using plasma of nitrogen, cleaning can be performed in a very short time, and wettability can be improved. When the base material is a liquid crystal panel, the cost of the liquid crystal display device can be reduced.

An electronic component mounting apparatus according to the present invention for carrying out the above mounting method generates plasma by a processing gas under atmospheric pressure or a pressure in the vicinity thereof, and sequentially transfers a substrate to the plasma. An atmospheric pressure plasma cleaning unit for contacting and cleaning, a conductive film bonding unit for arranging an anisotropic conductive film on the plasma-cleaned base material and thermocompression bonding to the base material, and for sequentially supplying the base material. An electronic component is disposed on the bonded anisotropic conductive film, and a component mounting part that thermocompresses the electronic component to the base material through the anisotropic conductive film is used, and when the plasma is generated. It is characterized in that voltages of a plurality of frequencies are superimposed and applied to the processing gas.

When the temporary mounting portion and the permanent mounting portion of the electronic component are provided in the component mounting unit, the electronic component can be more securely fixed. Then, when the electronic components are simultaneously main-bonded to the two base materials in the main-bonding section, the time of the time-consuming main-compression bonding process can be matched with the time of other processes, and the flow of the manufacturing process can be made smooth. it can.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of an electronic component mounting method and apparatus of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of an electronic component mounting apparatus according to the first embodiment of the present invention. In FIG. 1, a mounting apparatus 10 has a material supply unit 12 that supplies a liquid crystal panel (not shown) that is a base material, and a plasma cleaning unit that is an atmospheric pressure plasma cleaning unit adjacent to the material supply unit 12. 14 is provided.

In the material supply unit 12, the liquid crystal panels after the wet cleaning are carried in by the trays 16, and a plurality of liquid crystal panels are arranged in each tray 16. In addition, the material supply unit 12 includes a panel loader 1
8 is provided so that the stacked panel trays 16 can be moved up and down. The liquid crystal panel placed on the panel tray 16 is picked up by the material feeding robot 20 and placed at a predetermined position on the turntable 22 provided in the plasma cleaning unit 14.

The plasma cleaning unit 14 has a rotary table 22 and a plasma processing head 26, and the rotary table 22 rotates as indicated by an arrow 28 to carry the liquid crystal panel into the plasma processing head 26. The plasma processing head 26 has, for example, the structure shown in FIG. 2, and the plasma generating unit 32 is provided inside the chamber 30 whose lower portion is opened. The plasma generator 32 is
1 mm to 3 m for forming the flow path 34 for the discharge gas
A pair of plate-shaped dielectrics 36 having a gap of about m
And a pair of electrodes 38 sandwiching the pair of dielectrics 36,
It consists of 40. These electrodes 38 and 40 are for generating glow discharge in the gas flow path 34 to generate plasma, and a plasma generation region 42 is formed between both electrodes.

The lower portion of the chamber 30 has a liquid crystal panel 44.
It is a cleaning unit for cleaning the liquid crystal panel 44.
The peripheral portion of the rotary table 22 in which is disposed passes below the plasma generating portion 32 so that the surface of the liquid crystal panel 44 can be irradiated with plasma from the lower end of the opened gas flow path 34.

One electrode 38 is grounded, and the other electrode 40 is connected to the filter circuit 46 and the impedance matching device 4.
The high frequency power source 50 is connected via 8 and
A low frequency power supply 56 is connected via a filter circuit 52 and a step-up transformer 54. Therefore, the pair of electrodes 38, 4
During 0, for example, 13.56M by the high frequency power supply 50
20kHz by high frequency voltage of Hz and low frequency power supply 56
It is possible to superimpose the voltage and the voltage of 1) and to easily generate the high frequency discharge through the processing gas.

An intermediate chamber 58 is provided above the chamber 30. A nitrogen generator 62 that generates a nitrogen gas that is a processing gas is connected to the intermediate chamber 58 via a pipe line 60. And the intermediate chamber 5
8 and the gas flow path 34 communicate with each other through a gas supply port 64 formed in the chamber 30, and an intermediate chamber 58
The nitrogen gas that has flowed into the chamber can be supplied to the gas passage 34.

The liquid crystal panel 44 cleaned by the atmospheric pressure plasma is transferred from the rotary table 22 to the main turning table 68 by the panel pre-alignment transfer robot 65. This panel pre-alignment transfer robot 6
The image pickup device 5 picks up an image of the liquid crystal panel 44 with a CCD camera (not shown), and arranges the liquid crystal panel 44 on the main turning table 68 so that the liquid crystal panel 44 is oriented in a predetermined direction. Then, the main turning table 68 conveys the liquid crystal panel 44 to the conductive film attaching unit 66, which is a conductive film bonding portion provided adjacent to the plasma cleaning unit 14.

In the conductive film attaching unit 66, an anisotropic conductive film is arranged at a predetermined position on the liquid crystal panel 44 on the main turning table 68 and thermocompression bonded. Then, the main turning table 68 carries the liquid crystal panel into a chip temporary mounting unit (temporary mounting portion) 76 which is a part of the mounting portion 74 provided next to the conductive film attaching unit 66.

The chip tacking unit 76 takes out the chip tray from the chip tray loader elevator 78 and the chip tray loader elevator 78 which raises and lowers the chip tray on which semiconductor chips (not shown) which are ICs which are electronic parts are arranged. A tray transfer robot 82 for transferring to a chip tray supply index 80 rotating in a horizontal plane,
And a chip tray unloader elevator 83 into which an empty chip tray is loaded. A chip feeding robot 84 is provided in the chip tacking unit 76 so that the semiconductor chips on the chip tray feeding index 80 can be transferred to the chip pre-alignment turning table 86.

Further, the chip tacking unit 76 includes
A chip tacking robot 88 is provided, the semiconductor chip is taken out from the chip pre-alignment turning table 86, and the semiconductor chip is placed on the anisotropic conductive film attached to the liquid crystal panel 44 on the main turning table 68. It is designed to be temporarily attached by heating and pressurizing.

The chip tacking unit 76 includes a chip recognition moving table 90 and a panel recognition moving table 9.
2 is provided so that the semiconductor chip can be mounted at a predetermined position on the liquid crystal panel 44 in a predetermined direction by the chip temporary mounting robot 88. The chip temporary mounting robot 88 has a pair of heads, and while one head temporarily mounts the semiconductor chip, the other head mounts the semiconductor chip from the chip pre-alignment rotary table 86 to the main rotary table 68. It is designed to be transported to.

The chip book-bonding unit 94, which is the book-bonding section that constitutes the mounting section 74, is provided with a transfer robot 96 and a pair of main pressure bonding heads 98.
6 takes out the liquid crystal panel 44 to which the semiconductor chip is temporarily attached from the main turning table 68, and arranges it below the main pressure bonding head 98. The pair of main pressure bonding heads 98 are controlled so as to operate simultaneously, and the semiconductor chip is mainly pressure bonded to the anisotropic conductive film of the liquid crystal panel 44 disposed under each of them. Further, the liquid crystal panel 44 to which the semiconductor chips are finally attached is arranged by the carry-out robot 102 of the carry-out unit 100 on the carry-out tray 104 arranged in the tray unloader 103, and is sent to the next step.

The operation of the first embodiment constructed as described above is as follows. The liquid crystal panel 44, which has been subjected to the wet cleaning in the same manner as the conventional one, is placed on the chip tray 16 and carried into the material supply unit 12, and the material supply robot 2
When the number is 0, the sheets are sequentially arranged one by one at predetermined positions on the rotary table 22. Then, the liquid crystal panel 44 is conveyed to the plasma processing head 26 of the plasma cleaning unit 14 by the rotary table 22 and passes below the plasma generating unit 32, as shown in FIG.

The plasma processing head 26 includes a nitrogen generator 6
The nitrogen gas of atmospheric pressure is supplied from 2 to the gas flow path 34, and a high frequency voltage of 13.56 MHz and a low frequency voltage of 20 kHz are applied between the pair of electrodes 38 and 40 to ionize the nitrogen gas and generate plasma. Are generated and sprayed onto a predetermined position on the surface of the liquid crystal panel 44. As a result, the liquid crystal panel 4
In No. 4, the adhering organic substances are removed by plasma in a short time and washed to improve the wettability. That is, when irradiating glass with nitrogen plasma, as shown in FIG. 3, the contact angle of water with respect to glass of 70 degrees or more is reduced to 10 degrees or less by plasma irradiation for 1 to 2 seconds. You can Therefore, in-line plasma cleaning becomes possible.

Liquid crystal panel 44 after plasma cleaning
Are arranged on the main turning table 68 in a predetermined direction by the panel pre-alignment transfer robot 65, and are transferred to the conductive film attaching unit 66. The conductive film pasting unit 66 thermocompresses the anisotropic conductive film at a predetermined washed position of the liquid crystal panel. The liquid crystal panel to which the anisotropic conductive film is attached is carried into the chip temporary mounting unit 76 of the mounting portion 74 as the main turning table 68 turns. In the chip tacking unit 76, the chip tacking robot 88 takes out the semiconductor chip from the chip pre-alignment turning table 86, arranges it on the anisotropic conductive film attached to the liquid crystal panel 44, and heats and presses the semiconductor chip. And make a tack.

Liquid crystal panel 4 to which a semiconductor chip is temporarily attached
4 is conveyed below each of the pair of main pressure bonding heads 98 by the conveyance robot 96 of the tip bookbinding unit 94. Then, the pair of main pressure bonding heads 98 heat and pressurize the semiconductor chip on the anisotropic conductive film of the liquid crystal panel disposed below each of them to perform final bonding. The liquid crystal panel 44 to which the semiconductor chips are finally attached is arranged by the carry-out robot 102 on the carry-out tray 104 and is carried to the next step.

As described above, in the first embodiment,
Since plasma cleaning is performed by generating plasma from nitrogen gas under atmospheric pressure, the liquid crystal panel 44 can be quickly cleaned, plasma cleaning in COG can be performed in-line, and cost can be reduced. Moreover, a conductive film attaching portion 66 for attaching an anisotropic conductive film is provided adjacent to the plasma cleaning unit 14,
Since the anisotropic conductive film is attached to the liquid crystal panel 44 immediately after the plasma cleaning is completed, the adhesive strength of the anisotropic conductive film is improved and the incidence of defective products such as peeling is significantly reduced. And the yield is improved. Also, unlike conventional plasma cleaning in vacuum, plasma is generated under atmospheric pressure, so a vacuum container and vacuum pump are not required, and it is possible to reduce the size of the device and the cost of equipment, and to use plasma The number of washing steps can be reduced. Furthermore, in the above embodiment, 13.
Since a high frequency voltage of 56 MHz is applied to generate plasma, high temperature plasma can be generated, and the liquid crystal panel is preheated by cleaning with this high temperature plasma.
It is possible to reduce the attachment time of the anisotropic conductive film.

In the above embodiment, the COG in which the semiconductor chip is mounted on the liquid crystal panel 44 as the base material.
The TAB (Tape Automatic Bond) using a carrier film as a base material was described.
ing) can also be applied. Further, in the above-described embodiment, the case where the steps of temporary attachment and permanent attachment are performed to mount the semiconductor chip on the liquid crystal panel 44 has been described, but the liquid crystal panel immediately after plasma cleaning is anisotropic. Since the conductive film is pasted and the semiconductor chip is immediately pasted to the anisotropic conductive film,
By improving the adhesive strength of the anisotropic conductive film, the main pressure bonding time of the semiconductor chip can be shortened, and the main bonding of the semiconductor chip may be performed without temporary bonding, and the manufacturing process can be reduced.

FIG. 4 is an explanatory diagram of an electronic component mounting apparatus according to the second embodiment. In FIG. 4, the mounting device 120
Is provided with a panel loader 124 and a material supplying robot 126 in the material supplying unit 122, and a liquid crystal panel in a panel tray arranged in the panel loader 124 is supplied to the material supplying robot 1
By 26, two sheets can be supplied to the index conveyor 130 of the plasma cleaning unit 128. The index conveyor 130 is a chain conveyor made of a ceramic that is hard to be invaded by plasma.
Transport to 6. Further, the plasma-processed liquid crystal panels are placed two by two on the revolving table 136 provided in the apparatus main body 134 by the transfer robot 132 provided on the downstream side of the index conveyor 130.

The apparatus main body 134 includes a revolving table 136.
A panel pre-alignment unit 138 for orienting the liquid crystal panel in a predetermined direction and a conductive film attaching unit 140 for thermocompression bonding an anisotropic conductive film to the liquid crystal panel along the periphery of the liquid crystal panel.
A chip temporary attachment unit 142 for arranging and temporarily attaching a semiconductor chip on the anisotropic conductive film, a chip final attachment unit 144 for permanently attaching the temporarily attached semiconductor chip, and a semiconductor chip are attached. A crimp confirmation unit 146 for confirming that is provided.

In the chip tacking unit 142, the chip tray on which the semiconductor chips are arranged is moved from the chip tray loader elevator 148 to the tray index 152 as shown by an arrow 150. The semiconductor chips on the tray index 152 are carried into the chip pre-alignment index 156 by the chip feeding robot 154, and then temporarily attached to the anisotropic conductive film of the liquid crystal panel by the temporary pressure bonding robot 158. Then, the empty chip tray on the tray index 152 is moved to the chip tray unloader elevator 162 as indicated by an arrow 160, and is carried out.

The semiconductor chip temporarily attached by the provisional pressure bonding robot 158 is subjected to main pressure bonding by the chip main bonding unit 144, and pressure bonding is confirmed by the pressure bonding confirmation unit 146. Then, the liquid crystal panel is rotated two by two by the carry-out robot 166 provided in the carry-out section 164.
6, the sheets are arranged on the carry-out tray arranged in the tray unloader 168, and are conveyed to the next step.

Also in the second embodiment, the same effect as described above can be obtained.

FIG. 5 is an explanatory diagram of an electronic component mounting apparatus according to the third embodiment. The mounting device 170 includes the material supply unit 12
2 is provided with a material supplying robot 172, and by this material supplying robot 172, liquid crystal panels are transferred one by one from the panel tray arranged in the panel loader 124 to the index conveyor 130 of the plasma cleaning unit 128. It has become. The liquid crystal panel that has been plasma-cleaned by the plasma processing head 26 is
Panel pre-alignment transfer robot 176 provided in No. 4
Thus, the sheets are arranged one by one at a predetermined position on the turning table 178 in a predetermined direction.

In the liquid crystal panel arranged on the turntable 178, the anisotropic conductive film is thermocompression bonded by the conductive film bonding unit 140, and then the chip temporary mounting unit 180 is used.
Be delivered to. In the chip temporary attachment unit 180, the temporary compression robot 158 thermocompresses the semiconductor chip arranged at the chip pre-alignment index 156 to the anisotropic conductive film of the liquid crystal panel for temporary attachment. The liquid crystal panel to which the semiconductor chips have been temporarily attached is transported to the chip main assembly unit 182 by the turning table 178.

The chip main assembly unit 182 has a panel transfer robot 184, a pressure bonding rotary table 186, and a main pressure bonding robot 188.
4 arranges two liquid crystal panels on the turning table 178 side by side on the pressure bonding rotary table. Then, the main pressure bonding robot 188 heats and presses two liquid crystal panels arranged on the pressure bonding rotary table 186 to permanently bond the semiconductor chips. The liquid crystal panels to which the semiconductor chips are finally attached are arranged by the panel unloading robot 190 of the unloading unit 164 on the panel unloading tray arranged in the panel unloader 168.

[0042]

As described above, according to the present invention, plasma is generated under atmospheric pressure or a pressure in the vicinity thereof, so that it is necessary to carry a substrate to be plasma-cleaned into a vacuum container. Therefore, plasma cleaning can be performed in a short time while the substrate is continuously conveyed, and plasma cleaning can be easily performed in-line. Moreover, since the base material cleaned by atmospheric pressure plasma can be sequentially sent to the thermocompression bonding process of the anisotropic conductive film, the anisotropic conductive film is attached while the base material is extremely clean, and the semiconductor chip (IC ) And other electronic components can be attached, and the adhesive strength between the base material and the anisotropic conductive film and between the anisotropic conductive film and the electronic component can be improved to prevent peeling.
The defective rate can be reduced.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a mounting apparatus according to a first embodiment of the present invention.

FIG. 2 is a detailed explanatory diagram of the plasma processing head according to the embodiment.

FIG. 3 is an explanatory diagram of a cleaning effect by nitrogen plasma according to the embodiment.

FIG. 4 is an explanatory diagram of a mounting apparatus according to a second embodiment.

FIG. 5 is an explanatory diagram of a mounting apparatus according to a third embodiment.

FIG. 6 is a process diagram of a conventional COG.

[Explanation of symbols]

10 Mounting Device 12 Material Supply Unit 14 Atmospheric Pressure Plasma Cleaning Section (Plasma Cleaning Unit) 20 Material Supply Robot 22 Rotating Table 26 Plasma Processing Head 65 Panel Pre-Alignment Transfer Robot 66 Conductive Film Joining Section (Conductive Film Pasting Unit) 68 Main Turning Table 74 Mounting part 76 Temporary mounting part (chip temporary mounting unit) 88 Chip temporary mounting robot 94 Main mounting part (chip final mounting unit) 96 Transfer robot 98 Main pressure bonding head 100 Carrying out unit 102 Carrying out robot 120 Mounting device 122 Feeding part 126 Material supply robot 128 Plasma cleaning unit 132 Transfer robot 134 Device body 136 Turning table 140 Conductive film attaching unit 142 Chip temporary attaching unit 144 Chip final attaching unit 158 Temporary pressure bonding robot 170 Mounting device 17 Material supplying robot 174 apparatus main body 176 panels pre-alignment transfer robot 178 turntable 180 chips tacking unit 182 chips present with units 184 panel transfer robot 186 crimping rotary table 188 present crimping robot

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-8-114812 (JP, A) JP-A-8-37200 (JP, A) JP-A-8-6059 (JP, A) JP-A-9- 43622 (JP, A) JP-A-9-17825 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/60 H01L 21/302 H01L 21/304 645 G02F 1/1333 500

Claims (8)

(57) [Claims] 1. A generates a plasma by the processing gas at a pressure of atmospheric pressure or near, a plasma cleaning step of successively cleaning a substrate by the plasma, the substrate has been sequentially transmitted from the plasma cleaning step A method for mounting an electronic component, comprising : a step of thermocompression-bonding an anisotropic conductive film; and a step of thermocompression-bonding an electronic component to the base material via the anisotropic conductive film bonded to the base material. To produce a plurality of cycles in the process gas.
A method for mounting electronic components, characterized in that a voltage of a wave number is superimposed and applied . 2. The mounting method for an electronic component according to claim 1, wherein the processing gas is nitrogen gas. 3. The electronic device according to claim 1, wherein the base material is a liquid crystal panel, and the electronic component is a semiconductor integrated circuit including a circuit for driving the liquid crystal panel. How to mount parts. 4. A transfer for plasma-cleaning the substrate.
The member is made of ceramic.
4. A method for mounting an electronic component according to any one of 3 to 3. 5. A plasma is generated by a processing gas under atmospheric pressure or a pressure in the vicinity thereof, and a substrate that is sequentially conveyed is brought into contact with the plasma to perform atmospheric pressure plasma cleaning. the anisotropic conductive film is disposed, the electronic component is arranged on the anisotropic conductive film, in the electronic component mounting apparatus for thermal compression bonding to the substrate the electronic component via the anisotropic conductive film, wherein When generating plasma, the process gas may have a plurality of
An electronic component mounting device characterized in that a voltage of a wave number is superimposed and applied . 6. The component mounting portion arranges the electronic component on the anisotropic conductive film and temporarily attaches the electronic component, and a book that heats the temporarily attached electronic component to a high temperature to perform pressure bonding. The electronic component mounting apparatus according to claim 5, further comprising a mounting portion. 7. The main attachment section includes an aligning machine for arranging two of the base materials side by side and a crimping machine for simultaneously heating and crimping the pair of base materials. The electronic component mounting apparatus described in. 8. A transfer for cleaning the substrate by plasma
The member is made of ceramics.
The electronic component mounting apparatus described in.