JP2002050655A - Chip-packaging method and substrate-cleaning device used for the same - Google Patents

Chip-packaging method and substrate-cleaning device used for the same

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Publication number
JP2002050655A
JP2002050655A JP2000231664A JP2000231664A JP2002050655A JP 2002050655 A JP2002050655 A JP 2002050655A JP 2000231664 A JP2000231664 A JP 2000231664A JP 2000231664 A JP2000231664 A JP 2000231664A JP 2002050655 A JP2002050655 A JP 2002050655A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
wiping
plasma
mounting method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000231664A
Other languages
Japanese (ja)
Other versions
JP4363756B2 (en
Inventor
Akira Yamauchi
朗 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Engineering Co Ltd
Original Assignee
Toray Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Engineering Co Ltd filed Critical Toray Engineering Co Ltd
Priority to JP2000231664A priority Critical patent/JP4363756B2/en
Publication of JP2002050655A publication Critical patent/JP2002050655A/en
Application granted granted Critical
Publication of JP4363756B2 publication Critical patent/JP4363756B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Cleaning In General (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To efficiently remove impurities in a substrate, for packaging a chip with high quality. SOLUTION: The substrate 8 is horizontally conveyed by a substrate conveyance means 7. Along the conveyance path of the substrate, air-blow-, wiping-, and plasma-cleaning means 13, 22, and 25 are arranged adjacent in this order. The substrate 8 is cleaned by the cleaning means 13, 22, and 25 for treatment while the substrate 8 is being conveyed. When a series of cleaning treatment is completed, an adhesive is applied onto the cleaned substrate 8, and the chip is jointed onto the substrate. The substrate is cleaned before the adhesive is applied, thus packaging the chip onto the substrate with high quality.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、チップを基板に実
装するチップ実装方法に係り、特に基板に付着したゴミ
や汚れ等を洗浄してからチップを基板に実装するチップ
実装方法及びこれに用いられる基板洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a chip on a substrate, and more particularly to a method for mounting a chip on a substrate after cleaning dirt and dirt attached to the substrate and a method for mounting the chip on the substrate. To a substrate cleaning apparatus.

【0002】[0002]

【従来の技術】従来、基板(例えば、LCD用ガラス基
板等)の製造工程において、チップ(例えば、半導体チ
ップ等)を基板に実装する工程がある。チップを基板に
実装する方法として、基板に接着剤を付着させてから、
接着剤が付着された上記基板にチップを接合させて実装
する方法がよく知られている。
2. Description of the Related Art Conventionally, in the process of manufacturing a substrate (eg, a glass substrate for LCD), there is a process of mounting a chip (eg, a semiconductor chip) on the substrate. As a method of mounting the chip on the board, after attaching an adhesive to the board,
A method of mounting a chip by bonding the chip to the substrate to which an adhesive is attached is well known.

【0003】即ち、チップを実装するチップ実装装置に
おいて、 (1)基板に接着剤(例えば、ACF(Anisotropic Con
ductive Film) 、ACP(Anisotropic Conductive Past
e)、NCF(Non Conductive Film)、NCP(Non Condu
ctive Paste)等)を転写または塗布する。 (2)認識手段を用いてチップと基板とをアライメント
して、低加熱と低圧力でチップを基板に搭載する(以
下、「仮圧着」という)。 (3)高加熱と高圧力でチップと基板間の接着剤を硬化
させてチップと基板を固着させる(以下、「本圧着」と
いう)といった前記(1)〜(3)の工程によりチップ
を基板に実装している。
That is, in a chip mounting apparatus for mounting a chip, (1) an adhesive (for example, ACF (Anisotropic Con
conductive film), ACP (Anisotropic Conductive Past)
e), NCF (Non Conductive Film), NCP (Non Condu
ctive Paste)). (2) The chip and the substrate are aligned using the recognition means, and the chip is mounted on the substrate with low heating and low pressure (hereinafter, referred to as “temporary pressure bonding”). (3) The chip is bonded to the substrate by the steps (1) to (3), such as curing the adhesive between the chip and the substrate with high heating and high pressure to fix the chip and the substrate (hereinafter referred to as “final pressure bonding”). Has been implemented.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うなチップ実装方法の場合には、次のような問題があ
る。即ち、実装時において基板にガラス粉、ガラス粉じ
ん、有機物膜、酸化膜といったゴミや汚れ等が付着して
しまうことがある。
However, such a chip mounting method has the following problems. That is, dust or dirt such as glass powder, glass dust, an organic film, or an oxide film may adhere to the substrate during mounting.

【0005】ゴミや汚れが付着した基板を用いてチップ
実装を行うと、チップと基板との間にゴミや汚れが介在
するので、チップと基板とが完全に密着接合できない、
電気的良好な接続ができない、チップと基板との位置が
ズレる、チップや基板にキズが付く等の問題が生じてし
まう。
When a chip is mounted using a substrate to which dirt or dirt is attached, dirt or dirt is interposed between the chip and the substrate.
Problems such as the failure of good electrical connection, the displacement of the chip and the substrate, and the scratching of the chip and the substrate occur.

【0006】本発明は、このような事情に鑑みてなされ
たものであって、基板の汚れを効率よく除去してチップ
を高品位に実装することができるチップ実装方法及びこ
れに用いられる基板洗浄装置を提供することを課題とす
る。
The present invention has been made in view of such circumstances, and a chip mounting method capable of efficiently removing dirt from a substrate and mounting a chip with high quality, and a substrate cleaning method used therefor. It is an object to provide a device.

【0007】[0007]

【課題を解決するための手段】本発明は、上記課題を達
成するために、次のような構成をとる。請求項1に記載
の発明は、基板に接着剤を付着させる接着剤付着工程
と、接着剤が付着された基板にチップを接合させるチッ
プ接合工程とを備えたチップ実装方法において、接着剤
付着工程の前に、基板に対してエアーブロー洗浄を行う
エアーブロー洗浄工程と、基板に対してプラズマ洗浄を
行うプラズマ洗浄工程とをその順に配置してなる基板洗
浄工程を備え、エアーブロー洗浄工程とプラズマ洗浄工
程とにわたって基板を搬送移動させることにより、基板
に対してエアーブロー洗浄とプラズマ洗浄とを連続して
行うことを特徴とする。
The present invention has the following configuration to achieve the above object. According to a first aspect of the present invention, there is provided a chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive is attached. Before, a substrate cleaning step in which an air blow cleaning step of performing air blow cleaning on the substrate and a plasma cleaning step of performing plasma cleaning of the substrate are arranged in this order, and the air blow cleaning step and the plasma cleaning step are performed. By transporting and moving the substrate over the cleaning process, air blow cleaning and plasma cleaning are continuously performed on the substrate.

【0008】請求項2に記載の発明は、基板に接着剤を
付着させる接着剤付着工程と、接着剤が付着された基板
にチップを接合させるチップ接合工程とを備えたチップ
実装方法において、接着剤付着工程の前に、基板に対し
て拭き取り洗浄を行う拭き取り洗浄工程と、基板に対し
てプラズマ洗浄を行うプラズマ洗浄工程とをその順に配
置してなる基板洗浄工程を備え、拭き取り洗浄工程とプ
ラズマ洗浄工程とにわたって基板を搬送移動させること
により、基板に対して拭き取り洗浄とプラズマ洗浄とを
連続して行うことを特徴とする。
According to a second aspect of the present invention, there is provided a chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive is attached. Before the agent adhering step, there is provided a substrate cleaning step in which a wiping cleaning step for wiping and cleaning the substrate and a plasma cleaning step for performing plasma cleaning on the substrate are arranged in this order. The present invention is characterized in that wiping cleaning and plasma cleaning are continuously performed on the substrate by transporting and moving the substrate during the cleaning process.

【0009】請求項3に記載の発明は、基板に接着剤を
付着させる接着剤付着工程と、接着剤が付着された基板
にチップを接合させるチップ接合工程とを備えたチップ
実装方法において、接着剤付着工程の前に、基板に対し
てエアーブロー洗浄を行うエアーブロー洗浄工程と、基
板に対して拭き取り洗浄を行う拭き取り洗浄工程と、基
板に対してプラズマ洗浄を行うプラズマ洗浄工程とをそ
の順に配置してなる基板洗浄工程を備え、エアーブロー
洗浄工程と拭き取り洗浄工程とプラズマ洗浄工程とにわ
たって基板を搬送移動させることにより、基板に対して
エアーブロー洗浄と拭き取り洗浄とプラズマ洗浄とを連
続して行うことを特徴とする。
According to a third aspect of the present invention, there is provided a chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive is attached. Before the agent adhering step, an air blow cleaning step of performing air blow cleaning on the substrate, a wiping cleaning step of performing wiping cleaning on the substrate, and a plasma cleaning step of performing plasma cleaning on the substrate are performed in this order. A substrate cleaning step is provided, and the substrate is transported and moved over an air blow cleaning step, a wiping cleaning step, and a plasma cleaning step, so that air blowing cleaning, wiping cleaning, and plasma cleaning are continuously performed on the substrate. It is characterized by performing.

【0010】請求項4に記載の発明は、請求項1から請
求項3のいずれかに記載のチップ実装方法において、前
記基板洗浄工程では、基板の搬送経路に沿って各々の洗
浄工程を隣接配置し、搬送経路を一定の速さで通過する
基板に対して各々の洗浄処理を順に行う。
According to a fourth aspect of the present invention, in the chip mounting method according to any one of the first to third aspects, in the substrate cleaning step, the respective cleaning steps are arranged adjacently along the transport path of the substrate. Then, the respective cleaning processes are sequentially performed on the substrate passing through the transport path at a constant speed.

【0011】請求項5に記載の発明は、請求項1または
請求項3に記載のチップ実装方法において、前記エアー
ブロー洗浄工程では、振動させたエアーを基板に向けて
吹き出すとともに、吹き出したエアーを吸引排出するこ
とによって基板を洗浄する。
According to a fifth aspect of the present invention, in the chip mounting method of the first or third aspect, in the air blow cleaning step, the vibrated air is blown toward the substrate and the blown air is blown. The substrate is cleaned by suction and discharge.

【0012】請求項6に記載の発明は、請求項2または
請求項3に記載のチップ実装方法において、前記拭き取
り洗浄工程では、洗浄液を含浸させた帯状の不織布を巻
き取りながら、この不織布を基板に作用させて基板を洗
浄する。
According to a sixth aspect of the present invention, in the chip mounting method according to the second or third aspect, in the wiping and washing step, the nonwoven fabric is impregnated with a cleaning liquid while winding the nonwoven fabric into a substrate. To clean the substrate.

【0013】請求項7に記載の発明は、請求項6に記載
のチップ実装方法において、前記拭き取り洗浄工程で
は、不織布を基板の表裏両面に作用させて基板を洗浄す
る。
According to a seventh aspect of the present invention, in the chip mounting method of the sixth aspect, in the wiping and cleaning step, the nonwoven fabric is applied to both front and back surfaces of the substrate to clean the substrate.

【0014】請求項8に記載の発明は、請求項7に記載
のチップ実装方法において、前記拭き取り洗浄工程で
は、個別の不織布を基板の表裏両面にそれぞれ作用させ
て基板を洗浄する。
According to an eighth aspect of the present invention, in the chip mounting method of the seventh aspect, in the wiping and cleaning step, the nonwoven fabric is applied to both the front and back surfaces of the substrate to clean the substrate.

【0015】請求項9に記載の発明は、請求項6から請
求項8のいずれかに記載のチップ実装方法において、前
記拭き取り洗浄工程では、基板の進行方向に対して逆方
向へ不織布を巻き取っている。
According to a ninth aspect of the present invention, in the chip mounting method according to any one of the sixth to eighth aspects, in the wiping and cleaning step, the nonwoven fabric is wound in a direction opposite to the direction of travel of the substrate. ing.

【0016】請求項10に記載の発明は、請求項1から
請求項9のいずれかに記載のチップ実装方法において、
前記プラズマ洗浄工程では、大気圧下でプラズマを発生
させて基板を洗浄する。
According to a tenth aspect of the present invention, in the chip mounting method according to any one of the first to ninth aspects,
In the plasma cleaning process, the substrate is cleaned by generating plasma under atmospheric pressure.

【0017】請求項11に記載の発明は、請求項10に
記載のチップ実装方法において、前記プラズマ洗浄工程
では、大気圧下でガス通過管内に電圧を加えてプラズマ
を発生させることによって、基板を洗浄する。
According to an eleventh aspect of the present invention, in the chip mounting method of the tenth aspect, in the plasma cleaning step, a plasma is generated by applying a voltage to the inside of the gas passage tube under atmospheric pressure, thereby forming the substrate. Wash.

【0018】請求項12に記載の発明は、請求項1から
請求項11のいずれかに記載のチップ実装方法におい
て、前記基板は、ガラス基板である。
According to a twelfth aspect of the present invention, in the chip mounting method according to any one of the first to eleventh aspects, the substrate is a glass substrate.

【0019】請求項13に記載の発明は、請求項4に記
載のチップ実装方法において、前記搬送経路を通過する
基板の通過速度が、10〜100mm/秒である。
According to a thirteenth aspect of the present invention, in the chip mounting method of the fourth aspect, a passing speed of the substrate passing through the transport path is 10 to 100 mm / sec.

【0020】請求項14に記載の発明は、請求項1に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板にエアーブロー洗浄を
行うエアーブロー洗浄手段と、エアーブロー洗浄された
基板にプラズマ洗浄を行うプラズマ洗浄手段と、エアー
ブロー洗浄手段とプラズマ洗浄手段とにわたって基板を
搬送移動させる基板搬送手段とを備えたことを特徴とす
る。
According to a fourteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the first aspect, wherein air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is attached. And plasma cleaning means for performing plasma cleaning on the substrate subjected to the air blow cleaning, and substrate transport means for transporting and moving the substrate across the air blow cleaning means and the plasma cleaning means.

【0021】請求項15に記載の発明は、請求項2に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板に拭き取り洗浄を行う
拭き取り洗浄手段と、拭き取り洗浄された基板にプラズ
マ洗浄を行うプラズマ洗浄手段と、拭き取り洗浄手段と
プラズマ洗浄手段とにわたって基板を搬送移動させる基
板搬送手段とを備えたことを特徴とする。
According to a fifteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the second aspect, wherein a wiping cleaning means for wiping and cleaning the substrate before the adhesive is attached thereto; Plasma cleaning means for performing plasma cleaning on the wiped and cleaned substrate, and substrate transport means for transporting and moving the substrate across the wiping and cleaning means are provided.

【0022】請求項16に記載の発明は、請求項3に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板にエアーブロー洗浄を
行うエアーブロー洗浄手段と、エアーブロー洗浄された
基板に拭き取り洗浄を行う拭き取り洗浄手段と、拭き取
り洗浄された基板にプラズマ洗浄を行うプラズマ洗浄手
段と、エアーブロー洗浄手段と拭き取り洗浄手段とプラ
ズマ洗浄手段とにわたって基板を搬送移動させる基板搬
送手段とを備えたことを特徴とする。
According to a sixteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the third aspect, wherein air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is attached. And wiping and cleaning means for wiping and cleaning the air-blown substrate; plasma cleaning means for performing plasma cleaning on the wiping-cleaned substrate; and transporting the substrate between the air-blowing cleaning means, the wiping and cleaning means, and the plasma cleaning means. And a substrate transfer means for moving.

【0023】請求項17に記載の発明は、請求項15ま
たは請求項16に記載の基板洗浄装置において、前記拭
き取り洗浄手段は、基板表面の拭き取り洗浄用と基板裏
面の拭き取り洗浄用の2つが個別に配備されている。
According to a seventeenth aspect of the present invention, in the substrate cleaning apparatus according to the fifteenth or sixteenth aspect, the wiping and cleaning means comprises two separate parts, one for wiping the front surface of the substrate and the other for wiping the rear surface of the substrate. Has been deployed.

【0024】請求項18に記載の発明は、請求項15か
ら請求項17のいずれかに記載の基板洗浄装置におい
て、前記拭き取り洗浄手段は、基板の進行方向に対して
逆方向へ不織布を巻き取りながら、不織布を基板に作用
させて基板を洗浄する。
According to an eighteenth aspect of the present invention, in the substrate cleaning apparatus according to any one of the fifteenth to seventeenth aspects, the wiping and cleaning means winds the nonwoven fabric in a direction opposite to a direction in which the substrate advances. While washing the substrate, the nonwoven fabric acts on the substrate.

【0025】請求項19に記載の発明は、請求項14か
ら請求項18のいずれかに記載の基板洗浄装置におい
て、前記基板搬送手段は、基板を一定速度で搬送し、か
つ、前記各洗浄手段は基板の搬送経路に沿って隣接配置
されている。
According to a nineteenth aspect of the present invention, in the substrate cleaning apparatus according to any one of the fourteenth to eighteenth aspects, the substrate transporting means transports the substrate at a constant speed, and the cleaning means comprises: Are arranged adjacent to each other along the substrate transfer path.

【0026】請求項20に記載の発明は、請求項19に
記載の基板洗浄装置において、前記基板搬送手段は、1
0〜100mm/秒の速度で基板を搬送する。
According to a twentieth aspect of the present invention, in the substrate cleaning apparatus according to the nineteenth aspect, the substrate transporting means comprises:
The substrate is transported at a speed of 0 to 100 mm / sec.

【0027】[0027]

【作用】本発明の作用は次のとおりである。即ち、請求
項1に記載の発明によれば、基板に接着剤を付着する前
に、基板にエアーブロー洗浄を行うことにより、基板に
付着していたゴミ粉、ゴミ粉じんなどの汚れが除去され
る。その後、プラズマ洗浄処理を行うことにより、エア
ーブロー洗浄工程で除去できなかった有機物膜や酸化膜
などの汚れが分解除去される。従って、実装時に基板に
付着していたゴミや汚れが除去されて、基板にチップが
高品位に実装される。
The operation of the present invention is as follows. That is, according to the first aspect of the present invention, before the adhesive is attached to the substrate, the substrate is subjected to air blow cleaning, thereby removing dirt such as dust and dust attached to the substrate. You. Thereafter, by performing a plasma cleaning process, dirt such as an organic material film and an oxide film that cannot be removed in the air blow cleaning step is decomposed and removed. Therefore, dust and dirt attached to the substrate at the time of mounting are removed, and the chip is mounted on the substrate with high quality.

【0028】請求項2に記載の発明によれば、基板に接
着剤を付着する前に、基板に拭き取り洗浄を行うことに
より、基板に付着していたゴミ粉やゴミ粉じんなどの汚
れが除去される。その後、プラズマ洗浄処理を行うこと
により、拭き取り洗浄工程で除去できなかった有機物膜
や酸化膜などの汚れが分解除去される。従って、実装時
に基板に付着していたゴミや汚れが除去されて、基板に
チップが高品位に実装される。
According to the second aspect of the present invention, dirt such as dust and dirt adhering to the substrate is removed by wiping and cleaning the substrate before adhering the adhesive to the substrate. You. Thereafter, by performing a plasma cleaning process, dirt such as an organic film and an oxide film that cannot be removed in the wiping cleaning process is decomposed and removed. Therefore, dust and dirt attached to the substrate at the time of mounting are removed, and the chip is mounted on the substrate with high quality.

【0029】請求項3に記載の発明によれば、基板に接
着剤を付着する前に、基板にエアーブロー洗浄を行い、
次に拭き取り洗浄を行うことにより、基板に付着してい
たゴミ粉やゴミ粉じんなどの汚れが除去される。その
後、プラズマ洗浄処理を行うことにより、エアーブロー
洗浄工程および拭き取り洗浄工程で除去できなかった有
機物膜や酸化膜などの汚れが分解除去される。従って、
実装時に基板に付着していたゴミや汚れが効果的に除去
されて、基板にチップが一層高品位に実装される。
According to the third aspect of the present invention, the air blow cleaning is performed on the substrate before the adhesive is applied to the substrate,
Next, by performing wiping cleaning, dirt such as dust and dust attached to the substrate is removed. Thereafter, by performing a plasma cleaning process, dirt such as an organic film and an oxide film that cannot be removed in the air blow cleaning process and the wiping cleaning process is decomposed and removed. Therefore,
The dust and dirt attached to the substrate at the time of mounting are effectively removed, and the chip is mounted on the substrate with higher quality.

【0030】請求項4に記載の発明によれば、基板洗浄
工程において、各洗浄工程を基板の搬送経路に沿って隣
接配置し、この搬送経路を一定の速さで通過する基板に
対して洗浄処理を順に行うので、基板が効率よく洗浄さ
れる。
According to the fourth aspect of the present invention, in the substrate cleaning step, the cleaning steps are arranged adjacent to each other along the transport path of the substrate, and the substrates passing through the transport path at a constant speed are cleaned. Since the processing is performed sequentially, the substrate is efficiently cleaned.

【0031】請求項5に記載の発明によれば、振動させ
たエアーを吹き出すことによって基板に付着したゴミや
汚れ等を剥がし取り、吹き出したエアーを吸引すること
によって、剥がし取られたゴミや汚れ等をエアーととも
に吸引排出する。
According to the fifth aspect of the present invention, dust or dirt attached to the substrate is peeled off by blowing out the vibrated air, and the dust or dirt removed by sucking out the blown-up air. Etc. are sucked and discharged together with air.

【0032】請求項6に記載の発明によれば、洗浄液を
含浸させた帯状の不織布を巻き取りながら、この不織布
を基板に作用させているので、基板に付着しているゴミ
粉やゴミ粉じんの拭き取り除去が効率良く行われる。ま
た、不織布に捕獲されたゴミ粉などが基板に再付着する
こともない。
According to the sixth aspect of the present invention, since the nonwoven fabric is applied to the substrate while winding the belt-like nonwoven fabric impregnated with the cleaning liquid, the dust and the dust attached to the substrate are removed. Wiping and removal are performed efficiently. Further, dust and the like captured by the nonwoven fabric do not adhere to the substrate.

【0033】請求項7に記載の発明によれば、不織布を
基板の表裏両面に作用させているので、基板の表裏両面
が効率よく洗浄される。
According to the seventh aspect of the present invention, since the nonwoven fabric acts on both the front and back surfaces of the substrate, the front and back surfaces of the substrate are efficiently cleaned.

【0034】請求項8に記載の発明によれば、個別の不
織布を基板の表裏面にそれぞれ作用させているので、基
板裏面のゴミ粉や汚れが基板表面に付着したり、その逆
の現象が発生しない。
According to the eighth aspect of the present invention, since the individual nonwoven fabrics act on the front and back surfaces of the substrate, dust and dirt on the back surface of the substrate adhere to the surface of the substrate, and the opposite phenomenon occurs. Does not occur.

【0035】請求項9に記載の発明によれば、基板の進
行方向に対して逆方向へ不織布を巻き取りながら不織布
を基板に作用させて洗浄しているので、汚れていない清
浄な不織布で常に基板が洗浄される。
According to the ninth aspect of the present invention, the non-woven fabric is applied to the substrate and washed while winding the non-woven fabric in a direction opposite to the traveling direction of the substrate. The substrate is cleaned.

【0036】請求項10に記載の発明によれば、大気圧
下でプラズマを発生させているので、真空中でプラズマ
を発生させる場合と比べて、基板を搬送しながらプラズ
マ洗浄を行いやすい。
According to the tenth aspect of the present invention, since plasma is generated under the atmospheric pressure, it is easier to perform plasma cleaning while transporting the substrate than in the case where plasma is generated in a vacuum.

【0037】請求項11に記載の発明によれば、大気圧
下でガス通過管内に電圧を加えてプラズマを発生させて
いるので、基板にチャージ電圧を加えることなくプラズ
マのみを基板に作用させて基板の洗浄が行われる。
According to the eleventh aspect of the present invention, since a plasma is generated by applying a voltage to the gas passage tube under atmospheric pressure, only the plasma is applied to the substrate without applying a charge voltage to the substrate. The substrate is cleaned.

【0038】請求項12に記載の発明によれば、接着剤
を付着する前にガラス基板が効果的に洗浄され、ガラス
基板にチップが高品位に実装される。
According to the twelfth aspect of the present invention, the glass substrate is effectively cleaned before the adhesive is applied, and the chip is mounted on the glass substrate with high quality.

【0039】請求項13に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板が効果的に、かつ効率よく洗浄される。
According to the thirteenth aspect of the present invention, since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate is effectively and efficiently cleaned.

【0040】請求項14に記載の発明によれば、エアー
ブロー洗浄手段とプラズマ洗浄手段とを備えた基板洗浄
装置によって、接着剤付着前の基板に対してエアーブロ
ー洗浄とプラズマ洗浄とがその順に行われる。
According to the fourteenth aspect of the present invention, the substrate cleaning apparatus provided with the air blow cleaning means and the plasma cleaning means performs the air blow cleaning and the plasma cleaning on the substrate before the adhesive is applied in this order. Done.

【0041】請求項15に記載の発明によれば、拭き取
り洗浄手段とプラズマ洗浄手段とを備えた基板洗浄装置
によって、接着剤付着前の基板に対して拭き取り洗浄と
プラズマ洗浄とがその順に行われる。
According to the fifteenth aspect of the present invention, the substrate cleaning apparatus provided with the wiping cleaning means and the plasma cleaning means performs the wiping cleaning and the plasma cleaning on the substrate before the adhesive is applied in that order. .

【0042】請求項16に記載の発明によれば、エアー
ブロー洗浄手段と拭き取り洗浄手段とプラズマ洗浄手段
とを備えた基板洗浄装置によって、接着剤付着前の基板
に対してエアーブロー洗浄と拭き取り洗浄とプラズマ洗
浄とがその順に行われる。
According to the sixteenth aspect of the present invention, the substrate cleaning apparatus provided with the air blow cleaning means, the wiping cleaning means, and the plasma cleaning means performs air blow cleaning and wiping cleaning on the substrate before the adhesive is applied. And plasma cleaning are performed in that order.

【0043】請求項17に記載の発明によれば、基板表
面の拭き取り洗浄用と基板裏面の拭き取り洗浄用の2つ
の拭き取り洗浄手段を使って基板表裏面が個別に洗浄さ
れる。
According to the seventeenth aspect, the front and rear surfaces of the substrate are individually cleaned using two wiping cleaning means for wiping the surface of the substrate and wiping and cleaning the rear surface of the substrate.

【0044】請求項18に記載の発明によれば、基板の
進行方向に対して逆方向へ不織布を巻き取りながら、こ
の不織布を基板に作用させて基板が洗浄される。
According to the eighteenth aspect of the present invention, the non-woven fabric is applied to the substrate while the non-woven fabric is wound in the direction opposite to the traveling direction of the substrate, and the substrate is cleaned.

【0045】請求項19に記載の発明によれば、搬送経
路に沿って隣接配置された各洗浄手段が、基板搬送手段
によって一定速度で搬送されている基板に対して、各洗
浄処理を順に行う。
According to the nineteenth aspect of the present invention, each of the cleaning means disposed adjacently along the transport path sequentially performs each of the cleaning processes on the substrate being transported at a constant speed by the substrate transport means. .

【0046】請求項20に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板が効果的に、かつ効率よく洗浄される。
According to the twentieth aspect, since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate is effectively and efficiently cleaned.

【0047】[0047]

【発明の実施の形態】以下、図面を参照して本発明の実
施例を説明する。図1は、本発明に係るチップ実装方法
の一実施例を示す工程図である。本実施例に係るチップ
実装方法は大きく分けて、基板を洗浄する基板洗浄工程
S1と、洗浄された基板に接着剤を付着する接着剤付着
工程S2と、接着剤が付着された基板にチップを接合す
るチップ接合工程S3とからなる。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a process chart showing one embodiment of a chip mounting method according to the present invention. The chip mounting method according to the present embodiment is roughly divided into a substrate cleaning step S1 for cleaning a substrate, an adhesive application step S2 for applying an adhesive to the cleaned substrate, and a method for attaching a chip to the substrate to which the adhesive is applied. And a chip joining step S3 for joining.

【0048】基板洗浄工程S1は、基板に対してエアー
ブロー洗浄を行うエアーブロー洗浄工程S11と、エア
ーブロー洗浄された基板に対して拭き取り洗浄を行う拭
き取り洗浄工程S12と、拭き取り洗浄された基板に対
してプラズマ洗浄を行うプラズマ洗浄工程S13とから
構成され、エアーブロー洗浄工程S11と拭き取り洗浄
工程S12とプラズマ洗浄工程13とにわたって基板を
搬送移動させることにより、基板に対してエアーブロー
洗浄と拭き取り洗浄とプラズマ洗浄とを連続して行うよ
うになっている。
The substrate cleaning step S1 includes an air blow cleaning step S11 for performing air blow cleaning on the substrate, a wiping cleaning step S12 for performing wiping cleaning on the air blow cleaned substrate, and And a plasma cleaning step S13 for performing plasma cleaning on the substrate. The substrate is transported and moved between the air blow cleaning step S11, the wiping cleaning step S12, and the plasma cleaning step 13, thereby performing air blow cleaning and wiping cleaning on the substrate. And plasma cleaning are performed continuously.

【0049】エアーブロー洗浄工程S11では、エアー
吹出し部よりエアーを基板に吹きつけてゴミを吹き飛ば
し、吸引部からエアーとゴミとを吸引する方法が好まし
い。これにより、吹き飛ばされたゴミが基板に再付着す
るのを防止することができる。また、エアー吹出し部に
エアーを振動させる手段(例えば超音波発生手段等)を
備えると、エアー吹出し部より振動したエアーを基板に
吹きつけることにより、ゴミを一層効率よく除去するこ
とができる。
In the air blow cleaning step S11, it is preferable that air be blown from the air blowing portion to the substrate to blow off dust and the suction portion suck air and dust. This can prevent the blown dust from re-adhering to the substrate. In addition, if the air blowing unit is provided with a means for vibrating the air (for example, an ultrasonic wave generating unit), dust can be removed more efficiently by blowing the air vibrated from the air blowing unit onto the substrate.

【0050】拭き取り洗浄工程S12では、例えば、布
または洗浄液を含浸させた布などによって基板に付着し
ているゴミを拭き取る。このとき帯状の布を巻き取りな
がらゴミを拭き取るようにすれば、布に捕獲されたゴミ
が基板に再付着することがないので好ましい。また、個
別の布を用いて基板表裏面をそれぞれ拭き取り洗浄する
ようにすれば、基板裏面のゴミ粉や汚れが基板表面に付
着したり、その逆の現象が発生しないので好ましい。
In the wiping and cleaning step S12, dust adhering to the substrate is wiped off with, for example, a cloth or a cloth impregnated with a cleaning liquid. At this time, it is preferable to wipe off the dust while winding up the band-shaped cloth, since the dust captured by the cloth does not adhere to the substrate again. Further, it is preferable that the front and back surfaces of the substrate are wiped and cleaned using individual cloths, since dust and dirt on the back surface of the substrate do not adhere to the surface of the substrate, and vice versa.

【0051】プラズマ洗浄工程S13では、基板を搬送
しながらプラズマ処理を行うために、大気圧下で行うプ
ラズマ洗浄が好ましい。大気圧下で行うプラズマ洗浄処
理としては、例えば大気圧下でガス通過管内で電圧をか
けることによりプラズマを発生させる手法がある。この
手法によれば、エアーまたはガスを通過管内に通すこと
により基板にチャージ電圧を加えることなくプラズマの
みを基板に供給して基板に付着している汚れ(例えば有
機物膜、酸化膜等)を除去することができる。
In the plasma cleaning step S13, plasma cleaning performed at atmospheric pressure is preferable in order to perform plasma processing while transporting the substrate. As a plasma cleaning process performed under atmospheric pressure, for example, there is a method of generating plasma by applying a voltage in a gas passage tube under atmospheric pressure. According to this method, only plasma is supplied to the substrate without applying a charging voltage to the substrate by passing air or gas through the passage tube to remove dirt (for example, organic film, oxide film, etc.) attached to the substrate. can do.

【0052】上述したエアーブロー洗浄工程S11で
は、比較的大きいゴミ(例えば、ゴミ粉等)を除去し、
拭き取り洗浄工程S12ではエアーブロー洗浄工程S1
1で除去されるゴミよりも小さなゴミ(例えばガラス粉
じん等の細かいゴミ)を除去する。もし、拭き取り洗浄
工程S12、エアーブロー洗浄工程S11の順に洗浄処
理を行うと、拭き取り洗浄工程S12の段階では、ゴミ
粉等の比較的大きいゴミがまだ除去されていないので、
拭き取り洗浄時に大きいゴミによって基板にキズが付く
恐れがある。従って、エアーブロー洗浄工程S11、拭
き取り洗浄工程S12の順に洗浄処理を行っている。
In the above-described air blow cleaning step S11, relatively large dust (for example, dust) is removed.
In the wiping and cleaning step S12, an air blow cleaning step S1 is performed.
Dust smaller than the dust removed in step 1 (for example, fine dust such as glass dust) is removed. If the cleaning process is performed in the order of the wiping cleaning process S12 and the air blow cleaning process S11, at the stage of the wiping cleaning process S12, since relatively large dust such as dust is not removed yet,
During wiping and cleaning, large dust may scratch the substrate. Therefore, the cleaning process is performed in the order of the air blow cleaning process S11 and the wiping cleaning process S12.

【0053】また、プラズマ洗浄工程S13では、プラ
ズマによって有機物膜や酸化膜等の汚れを炭素分解や酸
素分解によって除去するので、エアーブロー洗浄工程S
11や拭き取り洗浄工程S12でゴミを除去した後に、
プラズマ洗浄工程S13を配置している。
In the plasma cleaning step S13, since the dirt such as the organic film and the oxide film is removed by the decomposition of carbon and oxygen by the plasma, the air blow cleaning step S13 is performed.
11 and after removing dust in the wiping and cleaning step S12,
A plasma cleaning step S13 is provided.

【0054】接着剤付着工程S2では、基板に接着剤
(例えば、ACF(Anisotropic Conductive Film) 、A
CP(Anisotropic Conductive Paste)、NCF(Non Con
ductive Film)、NCP(Non Conductive Paste)等)を
転写または塗布する。
In the adhesive applying step S2, an adhesive (for example, ACF (Anisotropic Conductive Film), A
CP (Anisotropic Conductive Paste), NCF (Non Con
Inductive Film), NCP (Non Conductive Paste) or the like is transferred or applied.

【0055】チップ接合工程S3は、認識手段を用いて
チップと基板とをアライメントして、低加熱と低圧力で
チップを基板に搭載する仮圧着工程S31と、高加熱と
高圧力でチップと基板間の接着剤を硬化させてチップと
基板を固着させる本圧着工程S32とからなる。
The chip bonding step S3 includes aligning the chip and the substrate using a recognition means, and mounting the chip on the substrate with low heating and low pressure, and temporarily bonding the chip and the substrate with high heating and high pressure. The main pressure bonding step S32 of curing the adhesive between the chips and fixing the chip and the substrate.

【0056】なお、本発明における「チップ」とは、例
えば、フィルムチップ、フィルムテープキャリアパッケ
ージ、ICチップ、半導体チップ、光素子、表面実装部
品、チップ、ウエハー等種類や大きさに関係なく、基板
と接合させる側の全ての形態を示す。
The term "chip" in the present invention means, for example, a film chip, a film tape carrier package, an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, etc. All forms on the side to be joined are shown.

【0057】また、本発明における「基板」とは、例え
ば、樹脂基板、ガラス基板、フィルム基板、チップ、ウ
エハー等種類や大きさに関係なく、チップと接合させる
側の全ての形態を示す。
The term "substrate" in the present invention means, for example, all forms on the side to be bonded to a chip, irrespective of the type and size, such as a resin substrate, a glass substrate, a film substrate, a chip, and a wafer.

【0058】さらに、本発明における「接合」とは、例
えば、基板上にチップを搭載することを目的とするマウ
ント、加熱加圧のプロセスを有したボンディング等の広
い概念を意味する。
Further, the term “joining” in the present invention means a broad concept such as mounting for mounting a chip on a substrate, bonding having a heating / pressing process, and the like.

【0059】以下、本発明の要部である基板洗浄工程で
用いられる基板洗浄装置について説明する。図2は、各
洗浄手段を一体化した実施例に係る基板洗浄装置の概略
構成を示す全体斜視図である。
Hereinafter, a substrate cleaning apparatus used in the substrate cleaning step which is a main part of the present invention will be described. FIG. 2 is an overall perspective view showing a schematic configuration of a substrate cleaning apparatus according to an embodiment in which each cleaning unit is integrated.

【0060】基板搬送手段7は、図2に示すように、X
方向に平行移動制御可能なアーム2、昇降制御可能な昇
降テーブル3、回転制御可能な回転テーブル4、Y方向
に平行移動制御可能な平行移動テーブル5(以下、符号
3、4、5を合わせて「可動テーブル6」という)、及
び基板保持部1によって構成されている。
As shown in FIG. 2, the substrate carrying means 7
Arm 2 that can be controlled in parallel in the direction, lifting table 3 that can be controlled in elevation, rotation table 4 that can be controlled in rotation, and translation table 5 that can be controlled in parallel in the Y direction “Movable table 6”) and the substrate holder 1.

【0061】基板保持部1はアーム2の先端に固着され
ており、基板保持面側に吸着孔を備えている。また、吸
着孔は耐圧ホース経由にて真空ポンプに接続(いずれも
図示省略)されており、真空吸着によって基板8を吸着
脱可能な形態に配設されている。
The substrate holding section 1 is fixed to the tip of the arm 2 and has a suction hole on the substrate holding surface side. The suction holes are connected to a vacuum pump via pressure-resistant hoses (both are not shown), and are arranged in such a manner that the substrate 8 can be sucked and removed by vacuum suction.

【0062】基板供給ユニット9a、9bには、各内部
に基板8が各々複数枚セットされており、基板保持部1
が基板供給ユニット9aの正面位置に来るように可動テ
ーブル6が移動した後、アーム2が基板供給ユニット9
a方向へ伸びるように構成されている。
In the substrate supply units 9a and 9b, a plurality of substrates 8 are set inside each of the substrate supply units 9a and 9b.
After the movable table 6 is moved such that the arm comes to the front position of the substrate supply unit 9a, the arm 2 is moved to the substrate supply unit 9a.
It is configured to extend in the direction a.

【0063】基板保持部1が、基板供給ユニット9a、
9b内部にセットされた基板8の下面部に到達後、アー
ム2が停止し、吸気孔を備えた基板保持部1によって基
板8を吸着保持し、その状態のままアーム2が縮む方向
へ移動して基板供給ユニット9aから基板8を取り出
す。
The substrate holding unit 1 includes a substrate supply unit 9a,
After reaching the lower surface of the substrate 8 set inside 9b, the arm 2 stops, the substrate 8 is sucked and held by the substrate holding unit 1 having the suction hole, and the arm 2 moves in the contracting direction in that state. Then, the substrate 8 is taken out from the substrate supply unit 9a.

【0064】基板8の搬送経路に沿って、エアーブロー
洗浄手段13、拭き取り洗浄手段22、及びプラズマ洗
浄手段25がその順に隣接配置されている。前記各洗浄
手段13、22、25の順で各洗浄処理が行われるよう
に、基板供給ユニット9aから取り出された基板8は吸
着保持されたまま基板搬送手段7によってエアーブロー
洗浄手段13方向へ平行移動される。平行移動の際に
は、基板8のチップ実装位置部分(図6中の符号28a
参照)に各洗浄処理が適切に行われるように移動固定さ
れる。
An air blow cleaning means 13, a wiping cleaning means 22, and a plasma cleaning means 25 are arranged adjacent to each other along the transport path of the substrate 8 in that order. The substrate 8 taken out of the substrate supply unit 9a is held by the substrate transport unit 7 in the direction of the air blow cleaning unit 13 while being suction-held so that each cleaning process is performed in the order of the cleaning units 13, 22, and 25. Be moved. In the case of the parallel movement, the chip mounting position portion of the substrate 8 (reference numeral 28a in FIG. 6)
(See Reference)), so that each cleaning process is appropriately performed.

【0065】エアーブロー洗浄手段13における超音波
エアーブロー部10の超音波エアー吹出し口面、拭き取
り洗浄手段22における押えガイド18、19間、及び
プラズマ洗浄手段25におけるプラズマ洗浄部23のプ
ラズマ吹出し口面は同一高さ位置に設けられているの
で、基板搬送手段7に保持された基板8が平行移動しな
がら各洗浄手段13、22、25を通過するときは、基
板を同一高さ位置に保った状態で通過させることができ
る。従って、基板8のサイズが隣接する洗浄手段に跨が
るような大きい場合は、各洗浄手段13、22、25に
よる洗浄が同時処理可能となる。
The ultrasonic air blowing surface of the ultrasonic air blowing unit 10 in the air blowing cleaning means 13, the space between the pressing guides 18 and 19 in the wiping cleaning means 22, and the plasma blowing surface of the plasma cleaning unit 23 in the plasma cleaning means 25. Are provided at the same height position, so that when the substrate 8 held by the substrate transfer means 7 passes through the cleaning means 13, 22, 25 while moving in parallel, the substrate is kept at the same height position. It can be passed in a state. Therefore, when the size of the substrate 8 is so large as to extend over the adjacent cleaning means, the cleaning by the cleaning means 13, 22, 25 can be performed simultaneously.

【0066】図3にエアーブロー洗浄手段13の構成を
示す。エアーブロー洗浄手段13は、支持部材12によ
って超音波エアーブロー部10を固着した形態に配設さ
れている。また、超音波エアーブロー部10の内部は超
音波エアー吹出し口33とゴミ吸引口34に分かれてお
り、耐圧ホース11aの先端は超音波エアー吹出し口3
3、同ホース11aの他端は吹出し用エアーポンプにつ
ながっている。また、耐圧ホース11bの先端はゴミ吸
引口34、同ホース11bの他端は吸引用エアーポンプ
につながっている。
FIG. 3 shows the structure of the air blow cleaning means 13. The air blow cleaning means 13 is provided in a form in which the ultrasonic air blow unit 10 is fixed by the support member 12. The inside of the ultrasonic air blow unit 10 is divided into an ultrasonic air outlet 33 and a dust suction port 34, and the tip of the pressure-resistant hose 11a is connected to the ultrasonic air outlet 3
3. The other end of the hose 11a is connected to a blowing air pump. The end of the pressure-resistant hose 11b is connected to a dust suction port 34, and the other end of the hose 11b is connected to a suction air pump.

【0067】基板搬送手段7に保持された基板8が平行
移動して超音波エアーブロー部10に差し掛かると耐圧
ホース11aによるエアー吹出し及びエアー振動手段2
9(例えば超音波発生部等)によってエアーを振動さ
せ、振動したエアー吹出し口33から振動波エアー(例
えば超音波エアー等)が吹出されると同時に耐圧ホース
11bによるエアー吸引を行う。
When the substrate 8 held by the substrate transfer means 7 moves in parallel and reaches the ultrasonic air blow section 10, air blowing by the pressure-resistant hose 11a and air vibration
The air is vibrated by 9 (for example, an ultrasonic wave generating unit or the like), and the vibration wave air (for example, ultrasonic air or the like) is blown out from the vibrated air outlet 33 and the air is sucked by the pressure-resistant hose 11b.

【0068】基板8は一定の速度で平行移動を続けなが
ら、超音波エアーブロー部10下面を通過するので、吹
出し口33から超音波エアー31を吹出すことによって
基板8のチップ実装位置に付着したゴミ粉30を剥がし
取り、剥がし取られたゴミ粉30をエアー32ごと吸引
口34によって吸引する。従って、ゴミ粉30は周囲へ
飛び散ることなく除去されて、基板8は拭き取り洗浄手
段22方向へ平行移動を続ける。
The substrate 8 passes through the lower surface of the ultrasonic air blow unit 10 while continuing to move in parallel at a constant speed, and thus adheres to the chip mounting position of the substrate 8 by blowing ultrasonic air 31 from the outlet 33. The dust powder 30 is peeled off, and the peeled dust powder 30 is sucked by the suction port 34 together with the air 32. Therefore, the dust powder 30 is removed without scattering to the surroundings, and the substrate 8 continues to move parallel to the wiping / cleaning means 22.

【0069】図4に拭き取り洗浄手段22の構成を示
す。例えば帯条の不織布テープ等の拭き取りテープ21
が供給ローラー14に保持される。このテープ21は、
昇降制御可能な押えガイド18、平行移動制御可能なロ
ーラ17、昇降制御可能な押えガイド19、テープ21
を送るための制御可能な駆動ローラ16、テープ21を
巻取るための巻取りローラ15の経路順にセットされ
る。
FIG. 4 shows the structure of the wiping / cleaning means 22. For example, a wiping tape 21 such as a nonwoven fabric tape of a strip
Is held by the supply roller 14. This tape 21
Pressing guide 18 capable of raising and lowering control, roller 17 capable of controlling parallel movement, pressing guide 19 capable of controlling lifting and lowering, tape 21
Is set in the order of the controllable driving roller 16 for feeding the tape and the winding roller 15 for winding the tape 21.

【0070】また、押えガイド18、19に設けられた
孔は洗浄液供給ホース20が各々接続され、ホース20
の各他端に接続された洗浄液装置(図示省略)によって
洗浄液が一定量ごとに供給制御される。このとき洗浄液
は常に供給されているのではなく、例えば基板1枚分や
基板の通過時間等によって洗浄液の供給/供給停止制御
を行う。そしてホース20によって供給された洗浄液は
押えガイド18、19の孔を経由してテープ21に洗浄
液を染み込ませる。
The holes provided in the holding guides 18 and 19 are connected to cleaning solution supply hoses 20, respectively.
The supply of the cleaning liquid is controlled by a predetermined amount by a cleaning liquid device (not shown) connected to each of the other ends. At this time, the supply of the cleaning liquid is not always supplied. For example, supply / supply stop control of the cleaning liquid is performed based on, for example, one substrate or the passage time of the substrate. The cleaning liquid supplied by the hose 20 penetrates the tape 21 through the holes of the holding guides 18 and 19.

【0071】エアーブロー洗浄手段13による洗浄完了
後、基板8が拭き取り洗浄手段22に差し掛かると、基
板8の厚み分が通過できるように押えガイド18、19
間が開いている状態(ガイド18が上昇、ガイド19は
下降している状態)にあったガイド18が下降、ガイド
19は上昇して基板8のチップを実装する部分(図6中
の符号28a等のようにゴミ粉じんを拭き取りたい部
分)を軽く挟む。このとき、ローラ17は基板8の端辺
が接触しない位置に調整及び固定されている。
After the cleaning by the air blow cleaning means 13 is completed, when the substrate 8 reaches the wiping and cleaning means 22, the pressing guides 18 and 19 allow the thickness of the substrate 8 to pass therethrough.
The guide 18 which was in the state where the gap was open (the state where the guide 18 was raised and the guide 19 was lowered) was lowered, and the guide 19 was raised to mount the chip of the substrate 8 (reference numeral 28a in FIG. 6). Etc.), etc.). At this time, the roller 17 is adjusted and fixed at a position where the edge of the substrate 8 does not contact.

【0072】基板搬送手段7に保持された基板8は、ガ
イド18、19によって軽く挟まれた状態のまま、平行
移動を一定の速度で続ける。つまり、ガイド18と基板
8との表面間、ガイド19と基板8との裏面間には拭き
取りテープ21が挟みこまれた状態になっており、この
挟みこまれたテープ21の周辺部分は洗浄液供給ホース
20によって一定量ごとに洗浄液が供給制御されている
ので、一定量の洗浄液が染み込んだ状態のまま基板8が
平行移動を続けることになる。従って、洗浄液が染み込
んだテープ21によって、エアーブロー洗浄手段13で
は洗浄しきれなかったゴミ粉じん35(例えばガラス粉
じん等の細かいゴミ)を拭き取る。
The substrate 8 held by the substrate transfer means 7 continues to be translated at a constant speed while being lightly sandwiched by the guides 18 and 19. That is, the wiping tape 21 is sandwiched between the front surface of the guide 18 and the back surface of the substrate 8 and between the back surface of the guide 19 and the back surface of the substrate 8. The peripheral portion of the sandwiched tape 21 is supplied with the cleaning liquid. Since the supply of the cleaning liquid is controlled by the hose 20 for each predetermined amount, the substrate 8 continues to move in a parallel state while a certain amount of the cleaning liquid permeates. Therefore, the dust 21 (for example, fine dust such as glass dust) which cannot be completely cleaned by the air blow cleaning means 13 is wiped off by the tape 21 impregnated with the cleaning liquid.

【0073】基板8がガイド18、19間を通過し終わ
ると、ゴミ拭き取り作業は完了となる。次の基板を拭き
取るための準備として次基板の厚み分が通過できるよう
にガイド18が上昇、ガイド19が下降すると同時に、
駆動ローラ16を駆動制御することによってテープ21
の拭き取り作業で汚れた部分を巻取りローラ15側へ巻
き取る。このときテープ21の送り量は、テープ21の
汚れた部分が次基板に接触しない量だけ送られる。な
お、拭き取り洗浄手段22による洗浄作業が完了した基
板8は、基板搬送手段7によってプラズマ洗浄手段25
方向へ平行移動を続ける。
When the substrate 8 has passed between the guides 18 and 19, the dust wiping operation is completed. As a preparation for wiping the next substrate, the guide 18 rises so that the thickness of the next substrate can pass, and at the same time the guide 19 descends,
By controlling the drive of the drive roller 16, the tape 21 is
The dirty part is taken up by the take-up roller 15 side by the wiping operation described in (1). At this time, the feeding amount of the tape 21 is such that the dirty portion of the tape 21 does not contact the next substrate. The substrate 8 having been subjected to the cleaning operation by the wiping and cleaning means 22 is removed by the substrate transporting means 7 to the plasma cleaning means 25.
Continue translation in the direction.

【0074】図5にプラズマ洗浄手段25の構成を示
す。プラズマ洗浄手段25は、支持部材24によって、
ガス通過管であるプラズマ洗浄部23を固着された形態
に配設されている。また、ノズル47はプラズマ洗浄部
23の下面に設けられており、プラズマ吹き出し口38
は、基板8のチップを実装する部分(図6中の符号28
a等のように有機物膜等の汚れを洗浄したい部分)にプ
ラズマが放出される位置に調整及び固定されている。
FIG. 5 shows the structure of the plasma cleaning means 25. The plasma cleaning means 25 is
The plasma cleaning unit 23, which is a gas passage tube, is provided in a fixed form. Further, the nozzle 47 is provided on the lower surface of the plasma cleaning unit 23, and is provided with the plasma outlet 38.
Are the parts of the substrate 8 on which the chips are mounted (reference numeral 28 in FIG. 6).
The position is adjusted and fixed at a position where plasma is emitted to a portion where contamination such as an organic film is to be cleaned, such as a.

【0075】基板搬送手段7に保持された基板8が平行
移動してプラズマ洗浄部23に差し掛かると、ガス供給
ホース48からガスまたはエアーがプラズマ洗浄部23
に供給される。プラズマ洗浄部23内に設けられた高周
波電源49及びアース50によってプラズマ洗浄部23
の内部でプラズマが生成される。生成されたプラズマ
は、ノズル47のプラズマ吹き出し口38から基板に向
けて放出される。基板8は一定の速度で平行移動してい
るので、有機物膜や酸化膜等の汚れ36が順次除去され
ていく。このとき、プラズマ洗浄部23内に高周波電源
49及びアース50が設けられているので、プラズマの
みが基板に放電されて、チャージ電圧は基板に引加され
ない。
When the substrate 8 held by the substrate transfer means 7 moves in parallel and approaches the plasma cleaning section 23, gas or air is supplied from the gas supply hose 48 to the plasma cleaning section 23.
Supplied to The high frequency power supply 49 and the ground 50 provided in the plasma cleaning unit 23
A plasma is generated in the inside. The generated plasma is emitted from the plasma outlet 38 of the nozzle 47 toward the substrate. Since the substrate 8 is moving in parallel at a constant speed, dirt 36 such as an organic film and an oxide film is sequentially removed. At this time, since the high frequency power supply 49 and the ground 50 are provided in the plasma cleaning unit 23, only the plasma is discharged to the substrate, and the charge voltage is not applied to the substrate.

【0076】また、基板に付着している汚れが有機物膜
の場合、ガス供給ホース48からは窒素、ヘリウム、ア
ルゴン、酸素等のガスを供給することによって汚れを除
去(炭素を分解)し、汚れが酸化膜の場合、ガス供給ホ
ース48からは窒素、ヘリウム、アルゴン、水素等のガ
スを供給することによって汚れを除去(酸素を分解)す
る。このとき供給するガスは基板の条件によって任意に
どちらかを選択してもよいし、両方選択してもよく、基
板に付着した汚れを除去する上記以外のガスを選択して
もよい。
If the dirt adhering to the substrate is an organic film, the dirt is removed (carbon is decomposed) by supplying a gas such as nitrogen, helium, argon or oxygen from the gas supply hose 48, and the dirt is removed. Is an oxide film, dirt is removed (oxygen is decomposed) by supplying a gas such as nitrogen, helium, argon, or hydrogen from the gas supply hose 48. The gas to be supplied at this time may be arbitrarily selected depending on the conditions of the substrate, may be selected from both, or may be a gas other than those described above for removing dirt attached to the substrate.

【0077】基板8がプラズマ洗浄部を通過し終わる
と、プラズマ洗浄作業は完了となりプラズマ37の放出
が停止する。なお、プラズマ洗浄手段25による洗浄作
業が完了した基板8は、基板搬送手段7によって可動テ
ーブル26方向へ平行移動を続ける。
When the substrate 8 has passed through the plasma cleaning section, the plasma cleaning operation is completed, and the emission of the plasma 37 stops. The substrate 8 after the cleaning operation by the plasma cleaning unit 25 has been completed is continuously moved in the direction of the movable table 26 by the substrate transfer unit 7.

【0078】基板搬送手段7に保持された基板8が平行
移動テーブル5の端(可動テーブル26の手前)に平行
移動を完了すると回転テーブル4によって可動テーブル
26側に90度回転制御した後、昇降テーブル3を制御
して基板保持部1に保持された基板8を可動テーブル2
6に搭載する。
When the substrate 8 held by the substrate transfer means 7 completes the parallel movement to the end of the parallel moving table 5 (before the movable table 26), the rotary table 4 controls the movable table 26 to rotate 90 degrees, and then moves up and down. By controlling the table 3, the substrate 8 held by the substrate holding unit 1 is moved to the movable table 2.
6

【0079】このとき、図6に示すように基板8におけ
るチップ実装位置28aのみの単辺だけであれば基板洗
浄装置27における洗浄工程は完了となり、基板搬送手
段7は、可動テーブル6によって基板供給ユニット9a
の正面位置に移動した後(戻った後)、アーム2が基板
供給ユニット9a方向へ伸びて次期基板を取出し、前記
同洗浄作業を繰り返す。また、可動テーブル26に残っ
た洗浄処理完了基板は搬送アーム(図示省略)によって
基板に接着剤(例えば、ACF(AnisotropicConductive
Film)、ACP(Anisotropic Conductive Paste)、NC
F(Non Conductive Film)、NCP(Non Conductive Pa
ste)等)を転写または塗布する接着剤付着工程以降の作
業ラインに搬送される。
At this time, as shown in FIG. 6, if only a single side of the chip mounting position 28a on the substrate 8 is a single side, the cleaning process in the substrate cleaning device 27 is completed. Unit 9a
(After returning), the arm 2 extends toward the substrate supply unit 9a to take out the next substrate, and the same cleaning operation is repeated. The cleaning-completed substrate remaining on the movable table 26 is attached to the substrate by an adhesive (for example, ACF (Anisotropic Conductive) by a transfer arm (not shown).
Film), ACP (Anisotropic Conductive Paste), NC
F (Non Conductive Film), NCP (Non Conductive Pa)
ste) etc. are transferred to a work line after the adhesive adhering step of transferring or applying.

【0080】また、図7に示すように基板8におけるチ
ップ実装位置が複数辺ある場合、例えばチップ実装位置
28a以外に28b、28c、28d等、基板の全辺に
チップを実装しなくてはならないときは、洗浄処理を行
っていない個所に対して前記同洗浄処理を行わなくては
ならないので、基板8を搭載した可動テーブル26が回
転する。例えば図7のように基板の全辺において洗浄処
理を要する場合は90度回転して基板の向きを変える。
そのあと再度、基板搬送手段7の基板保持部1によって
吸着保持される。
When the chip mounting position on the substrate 8 has a plurality of sides as shown in FIG. 7, the chip must be mounted on all sides of the substrate such as 28b, 28c and 28d, for example, in addition to the chip mounting position 28a. At this time, since the same cleaning process must be performed on a portion where the cleaning process has not been performed, the movable table 26 on which the substrate 8 is mounted rotates. For example, as shown in FIG. 7, when cleaning processing is required on all sides of the substrate, the substrate is rotated 90 degrees to change the direction of the substrate.
Thereafter, the substrate is held by the substrate holding unit 1 of the substrate transfer means 7 again.

【0081】基板搬送手段7に保持された基板8は可動
テーブル6によってエアーブロー洗浄手段13まで移動
した後(戻った後)、前記同洗浄工程であるエアーブロ
ー洗浄手段13、拭き取り洗浄手段22、及びプラズマ
洗浄手段25による洗浄処理を行い、可動テーブル26
に洗浄処理完了基板が搭載される。そして可動テーブル
26の回転制御によって基板の向きを変えた後、再度、
基板搬送手段7によって保持して、エアーブロー洗浄手
段13まで移動して前記同洗浄処理を行う。
After the substrate 8 held by the substrate transfer means 7 is moved by the movable table 6 to the air blow cleaning means 13 (after returning), the air blow cleaning means 13, the wiping cleaning means 22, Then, a cleaning process is performed by the plasma cleaning unit 25 and the movable table 26
The substrate on which the cleaning process has been completed is mounted. Then, after changing the direction of the substrate by the rotation control of the movable table 26, again
The substrate is held by the substrate transfer means 7 and moved to the air blow cleaning means 13 to perform the same cleaning processing.

【0082】つまり、基板8における洗浄処理を要する
複数辺の数だけ洗浄処理を繰り返した後、洗浄処理作業
は完了となる。そして、可動テーブル26に搭載された
洗浄処理完了基板は搬送アーム(図示省略)によって基
板に接着剤(例えば、ACF(Anisotropic Conductive
Film) 、ACP(Anisotropic Conductive Paste)、NC
F(Non Conductive Film)、NCP(Non Conductive Pa
ste)等)を転写または塗布する接着剤付着工程以降の作
業ラインに搬送される。
That is, after the cleaning process is repeated for a plurality of sides of the substrate 8 that require the cleaning process, the cleaning process is completed. The cleaning-completed substrate mounted on the movable table 26 is attached to the substrate by a transfer arm (not shown) with an adhesive (for example, ACF (Anisotropic Conductive)).
Film), ACP (Anisotropic Conductive Paste), NC
F (Non Conductive Film), NCP (Non Conductive Pa)
ste) etc. are transferred to a work line after the adhesive adhering step of transferring or applying.

【0083】上述したように、ACF、ACP等の接着
剤を基板に貼付または塗布した後、チップと基板とをア
ライメントしてから仮圧着と本圧着とを施す。
As described above, after the adhesive such as ACF or ACP is attached or applied to the substrate, the chip and the substrate are aligned, and then the temporary compression and the final compression are performed.

【0084】なお、基板8を保持した基板搬送手段7
は、一定の速度でエアーブロー洗浄手段13、拭き取り
洗浄手段22、及びプラズマ洗浄手段25を通過する
が、このときの移動速度は基板条件等によって任意に選
択されるが、一般的に10〜100mm/秒の速度で基
板を移動させる形態が好ましい。
The substrate transfer means 7 holding the substrate 8
Passes through the air blow cleaning means 13, the wiping cleaning means 22, and the plasma cleaning means 25 at a constant speed, and the moving speed at this time is arbitrarily selected depending on the substrate conditions and the like. A preferred mode is one in which the substrate is moved at a speed of / sec.

【0085】本発明は上述した実施例に限らず、以下の
ように変形実施することもできる。 (1)本発明に係るチップ実装方法における基板洗浄工
程は、上述した実施例のようにエアーブロー洗浄工程S
11、拭き取り洗浄工程S12、プラズマ洗浄工程S1
3をその順に配置するものに限らず、次のような基板洗
浄工程であってもよい。
The present invention is not limited to the above embodiment, but can be modified as follows. (1) The substrate cleaning step in the chip mounting method according to the present invention includes the air blow cleaning step S as in the above-described embodiment.
11, wiping cleaning step S12, plasma cleaning step S1
3 is not limited to the order, and the following substrate cleaning process may be used.

【0086】例えば、接着剤付着工程の前の基板洗浄工
程として、基板に対してエアーブロー洗浄を行うエアー
ブロー洗浄工程S11と、基板に対してプラズマ洗浄を
行うプラズマ洗浄工程S13とをその順に配置し、エア
ーブロー洗浄工程S11とプラズマ洗浄工程S13とに
わたって基板を搬送移動させることにより、基板に対し
てエアーブロー洗浄とプラズマ洗浄とを連続して行うよ
うにしてもよい。
For example, as a substrate cleaning process before the adhesive application process, an air blow cleaning process S11 for performing air blow cleaning on a substrate and a plasma cleaning process S13 for performing plasma cleaning on the substrate are arranged in this order. Then, the substrate may be conveyed and moved between the air blow cleaning step S11 and the plasma cleaning step S13, so that the air blow cleaning and the plasma cleaning may be continuously performed on the substrate.

【0087】あるいは、接着剤付着工程の前の基板洗浄
工程として、基板に対して拭き取り洗浄を行う拭き取り
洗浄工程S12と、基板に対してプラズマ洗浄を行うプ
ラズマ洗浄工程S13とをその順に配置し、拭き取り洗
浄工程S12とプラズマ洗浄工程S13とにわたって基
板を搬送移動させることにより、基板に対して拭き取り
洗浄とプラズマ洗浄とを連続して行うようにしてもよ
い。
Alternatively, as a substrate cleaning step before the adhesive adhering step, a wiping cleaning step S12 for wiping and cleaning the substrate and a plasma cleaning step S13 for performing plasma cleaning on the substrate are arranged in this order. By carrying and moving the substrate over the wiping cleaning step S12 and the plasma cleaning step S13, the wiping cleaning and the plasma cleaning may be continuously performed on the substrate.

【0088】(2)同様に、本発明に係る基板洗浄装置
は、上述した実施例装置のように、エアーブロー洗浄手
段13、拭き取り洗浄手段22、プラズマ洗浄手段25
を備えたものに限らず、次のような基板洗浄装置であっ
てもよい。
(2) Similarly, the substrate cleaning apparatus according to the present invention comprises an air blow cleaning unit 13, a wiping cleaning unit 22, and a plasma cleaning unit 25, as in the above-described embodiment.
The present invention is not limited to the one provided with the above, and may be the following substrate cleaning apparatus.

【0089】例えば、接着剤が付着される前の基板にエ
アーブロー洗浄を行うエアーブロー洗浄手段13と、エ
アーブロー洗浄された基板にプラズマ洗浄を行うプラズ
マ洗浄手段25と、エアーブロー洗浄手段13とプラズ
マ洗浄手段25とにわたって基板を搬送移動させる基板
搬送手段7とを備えた基板洗浄装置であってもよい。
For example, the air blow cleaning means 13 for performing air blow cleaning on the substrate before the adhesive is attached, the plasma cleaning means 25 for performing plasma cleaning on the air blow cleaned substrate, and the air blow cleaning means 13 The substrate cleaning apparatus may include a substrate cleaning unit 7 that transports and moves the substrate over the plasma cleaning unit 25.

【0090】あるいは、接着剤が付着される前の基板に
拭き取り洗浄を行う拭き取り洗浄手段22と、拭き取り
洗浄された基板にプラズマ洗浄を行うプラズマ洗浄手段
25と、拭き取り洗浄手段22とプラズマ洗浄手段25
とにわたって基板を搬送移動させる基板搬送手段7とを
備えた基板洗浄装置であってもよい。
Alternatively, wiping and cleaning means 22 for wiping and cleaning the substrate before the adhesive is applied, plasma cleaning means 25 for performing plasma cleaning on the wiped and cleaned substrate, wiping and cleaning means 22 and plasma cleaning means 25
And a substrate transporting means 7 for transporting and moving the substrate.

【0091】(3)基板搬送手段7における基板保持部
1は、吸気孔による吸着保持手段だけでなく、静電気に
よる静電保持手段、磁石や磁気等による磁気保持手段、
複数または単数の可動ツメによってチップを掴むまたは
押さえる機械的手段等、どのような保持手段を備えた形
態であってもよい。
(3) The substrate holding portion 1 of the substrate transfer means 7 is not limited to the suction holding means by the suction hole, but also the electrostatic holding means by static electricity, the magnetic holding means by magnet or magnetism,
Any type of holding means such as mechanical means for gripping or holding the chip by a plurality of or a single movable claw may be provided.

【0092】(4)基板中央部等の位置にチップを実装
するような基板の場合、図8〜14に示すように基板保
持部1の形状を例えばコの字型基板保持部39に工夫す
る等によって基板中央部でも洗浄可能な形態にしてもよ
く、この他の形態であってもよい。なお、基板保持手段
も図8〜14に示すように吸着孔40等による吸着保持
手段(図8参照)、静電気等による静電保持手段、磁石
(磁気)41等による磁気保持手段(図9参照)、複数
の可動ツメ42によって基板8を挟む機械的手段(図1
0参照)、単数の可動ツメ42によって基板8を押える
機械的手段(図11参照)、ツメやクリップ43等によ
る機械的手段(図12参照)、剥離可能な粘着テープや
接着剤44等による粘着保持手段(図13参照)、複数
のコの字型基板保持部39によって挟む機械的手段(図
14参照)等、どのような形態に設けてもよい。
(4) In the case of a substrate on which a chip is mounted at a position such as the center of the substrate, the shape of the substrate holding portion 1 is modified into, for example, a U-shaped substrate holding portion 39 as shown in FIGS. For example, the central part of the substrate may be cleaned, or another form may be used. As shown in FIGS. 8 to 14, the substrate holding means also includes suction holding means (see FIG. 8) using suction holes 40 and the like, electrostatic holding means using static electricity and the like, and magnetic holding means using a magnet (magnetism) 41 and the like (see FIG. 9). ), Mechanical means for sandwiching the substrate 8 between the plurality of movable claws 42 (FIG. 1)
0), mechanical means for pressing the substrate 8 with a single movable claw 42 (see FIG. 11), mechanical means for using a claw or a clip 43 (see FIG. 12), adhesion using a peelable adhesive tape or an adhesive 44 or the like. The holding means (see FIG. 13) and mechanical means (see FIG. 14) sandwiched by a plurality of U-shaped substrate holding portions 39 may be provided in any form.

【0093】(5)また、エアーブロー洗浄手段13
は、図15に示すように基板8の表面/裏面の両面洗浄
できるように表面用、裏面用の超音波エアーブロー部1
0を設けた形態であってもよい。
(5) Air blow cleaning means 13
As shown in FIG. 15, the ultrasonic air blow unit 1 for the front surface and the back surface so that both the front and back surfaces of the substrate 8 can be cleaned.
0 may be provided.

【0094】(6)プラズマ洗浄手段25は、図16に
示すように基板8の表面/裏面の両面洗浄できるように
表面用、裏面用の各プラズマ洗浄部23を設けた形態で
あってもよい。
(6) As shown in FIG. 16, the plasma cleaning means 25 may have a form in which each of the front and back plasma cleaning sections 23 is provided so that both the front and back surfaces of the substrate 8 can be cleaned. .

【0095】(7)拭き取り洗浄手段22は、ガイド1
8、19によって基板の表面と裏面とを拭き取る1体型
に設けられた形態だけでなく、図17に示すように基板
表面用、基板裏面用等2つに分離した形態等のように、
1体型以外の形態に構成してもよい。このように構成す
れば、基板裏面に付着していたゴミ粉や汚れが基板表面
に付着したり、その逆の現象が生じないので好ましい。
さらに拭き取り中は、テープ21は固定した状態で基板
を通過させてもよいが、基板の進行方向と逆方向へテー
プ21を駆動させ、常にテープの汚れていない部分で拭
き取る形態が好ましい。
(7) The wiping and cleaning means 22 includes the guide 1
In addition to the configuration provided in a single body for wiping the front and back surfaces of the substrate by 8 and 19, as shown in FIG.
You may comprise in forms other than one-piece type. This configuration is preferable because dust and dirt adhering to the back surface of the substrate do not adhere to the surface of the substrate, and the opposite phenomenon does not occur.
Further, during the wiping, the tape 21 may be passed through the substrate in a fixed state. However, it is preferable that the tape 21 is driven in a direction opposite to the direction in which the substrate advances, and the tape 21 is always wiped with a clean portion of the tape.

【0096】(8)拭き取り洗浄手段22に用いる拭き
取りテープ21は、帯状の不織布に洗浄液を含浸した形
態が好ましいが、洗浄液を含浸していない形態であって
もよく、さらに同効果を得ることが可能なテープであれ
ば不織布以外のテープであってもよい。
(8) The wiping tape 21 used for the wiping / cleaning means 22 is preferably in a form in which a strip-shaped nonwoven fabric is impregnated with a cleaning liquid, but may be in a form in which the cleaning liquid is not impregnated. A tape other than a nonwoven fabric may be used as long as the tape is possible.

【0097】(9)拭き取り洗浄手段22のユニット
は、基板洗浄装置27に固定されているが、ユニット全
体を平行移動制御、回転制御、昇降制御する等、どのよ
うな動作形態に配設してもよい。基板保持部1はアーム
2に固着された形態だけでなく、図18に示すように回
転テーブル46等によって回転制御可能な形態に設けて
基板の向きを変えることができる等、どのような形態に
設けてもよい。また、エアーブロー洗浄手段13の形態
は、超音波エアーブロー部10が支持部材12に固着さ
れた形態だけでなく、エアーブロー洗浄手段13全体を
平行移動制御、回転制御、昇降制御する等、どのような
動作形態に配設してもよい。プラズマ洗浄手段25の形
態も超音波洗浄手段13と同様である。
(9) The unit of the wiping and cleaning means 22 is fixed to the substrate cleaning device 27, but the whole unit is arranged in any operation form such as parallel movement control, rotation control, and elevation control. Is also good. The substrate holding unit 1 is not limited to a form fixed to the arm 2, but may be provided in a form in which rotation can be controlled by a rotary table 46 or the like as shown in FIG. It may be provided. The form of the air blow cleaning means 13 is not limited to the form in which the ultrasonic air blow section 10 is fixed to the support member 12, but may be any of such as parallel movement control, rotation control, and elevation control of the entire air blow cleaning means 13. It may be arranged in such an operation mode. The form of the plasma cleaning means 25 is the same as that of the ultrasonic cleaning means 13.

【0098】(10)超音波エアーブロー部10内部の
中央部に超音波エアー吹出し口33、その両側にゴミ吸
引口34が配設されているが、この逆に両側から超音波
エアーを吹出し、中央部からゴミを吸引する形態等、ゴ
ミ粉30が周囲に飛び散ることなく洗浄処理できる形態
であれば、どのような形態であってもよい。
(10) An ultrasonic air blowout port 33 is provided at the center of the ultrasonic air blow section 10 and a dust suction port 34 is provided on both sides. On the contrary, ultrasonic air is blown from both sides. Any form, such as a form in which dust is sucked from the central portion, may be used as long as the dust powder 30 can be cleaned without scattering around.

【0099】(11)チップを基板に実装する接着剤は
ACF、ACP等の異方性導電膜(異方性導電膜とは、
膜の厚み方向には導電性、面方向には絶縁性を持ってい
る導電膜のことをいう)のみならず、通常の導電膜(等
方性導電膜)や絶縁性の接着剤等、特に限定されない。
絶縁性の接着剤の場合には、チップを基板に実装する際
に機械的にチップと基板とを導通接続させる処理が必要
になるときもある。また、接着剤を基板に転写または塗
布する以外にも、接着剤を基板上に滴下する等、基板に
接着剤を付着させる方法についても特に限定されない。
(11) The adhesive for mounting the chip on the substrate is an anisotropic conductive film such as ACF or ACP.
Not only a conductive film having conductivity in the thickness direction of the film and an insulating property in the plane direction), but also a normal conductive film (isotropic conductive film), an insulating adhesive, etc. Not limited.
In the case of an insulating adhesive, there is a case where a process of mechanically connecting the chip and the substrate is required when the chip is mounted on the substrate. In addition to transferring or applying the adhesive to the substrate, there is no particular limitation on the method of attaching the adhesive to the substrate, such as by dropping the adhesive on the substrate.

【0100】(12)仮圧着と本圧着とによってチップ
を基板に接合したが、仮圧着を行わずに本圧着のみでチ
ップを基板に接合してもよく、チップを基板に接合可能
であるならば、圧着に限定されることもない。
(12) Although the chip was bonded to the substrate by the temporary compression and the final compression, the chip may be bonded to the substrate only by the final compression without performing the temporary compression, and if the chip can be bonded to the substrate. It is not limited to crimping.

【0101】[0101]

【発明の効果】以上に詳述したように、請求項1の発明
に係るチップ実装方法によれば、基板に接着剤を付着す
る前に、基板にエアーブロー洗浄とプラズマ洗浄とをそ
の順に行って、基板に付着していたゴミ粉、ゴミ粉じ
ん、有機物膜や酸化膜などの汚れを除去しているので、
チップを基板に高品位に実装することができる。つま
り、基板に付着した汚れによってチップと基板との接着
不良や電気的接続不良が発生したり、チップと基板との
位置がずれたり、チップや基板にキズが付くなどの不具
合を解消することができる。また、エアーブロー洗浄工
程とプラズマ洗浄工程とにわたって基板を搬送移動させ
ることにより、基板に対してエアーブロー洗浄とプラズ
マ洗浄とを連続して行っているので、基板の汚れを効率
よく除去することもできる。
As described above in detail, according to the chip mounting method according to the first aspect of the present invention, the air blow cleaning and the plasma cleaning are sequentially performed on the substrate before the adhesive is attached to the substrate. And removes dirt such as dust, dust, organic film and oxide film attached to the substrate.
The chip can be mounted on the substrate with high quality. In other words, it is possible to eliminate problems such as poor adhesion and poor electrical connection between the chip and the substrate due to dirt attached to the substrate, misalignment between the chip and the substrate, and scratches on the chip and the substrate. it can. In addition, since the substrate is conveyed and moved between the air blow cleaning step and the plasma cleaning step, the air blow cleaning and the plasma cleaning are continuously performed on the substrate, so that the substrate can be efficiently cleaned. it can.

【0102】請求項2の発明に係るチップ実装方法によ
れば、基板に接着剤を付着する前に、基板に拭き取り洗
浄とプラズマ洗浄とをその順に行って基板の汚れを除去
しているので、請求項1の発明と同様に、チップを基板
に高品位に実装することができる。また、基板の汚れを
効率よく除去することもできる。
According to the chip mounting method according to the second aspect of the present invention, the dirt on the substrate is removed by performing wiping cleaning and plasma cleaning on the substrate in this order before the adhesive is attached to the substrate. As in the first aspect, the chip can be mounted on the substrate with high quality. In addition, dirt on the substrate can be efficiently removed.

【0103】請求項3の発明に係るチップ実装方法によ
れば、基板に接着剤を付着する前に、基板にエアーブロ
ー洗浄と拭き取り洗浄とプラズマ洗浄とをその順に行っ
て基板の汚れを除去しているので、請求項1や請求項2
の場合よりも一層高品位にチップを基板に実装すること
ができる。また、基板の汚れを効率よく除去することも
できる。
According to the chip mounting method according to the third aspect of the present invention, before the adhesive is attached to the substrate, the substrate is subjected to air blow cleaning, wiping cleaning, and plasma cleaning in that order to remove dirt from the substrate. Claims 1 and 2
The chip can be mounted on the substrate with higher quality than in the case of (1). In addition, dirt on the substrate can be efficiently removed.

【0104】請求項4の発明に係るチップ実装方法によ
れば、各洗浄工程を基板の搬送経路に沿って隣接配置
し、この搬送経路を一定の速さで通過する基板に対して
洗浄処理を順に行うので、基板を効率よく洗浄すること
ができる。
According to the chip mounting method of the present invention, the cleaning steps are arranged adjacent to each other along the transport path of the substrate, and the cleaning process is performed on the substrate passing through the transport path at a constant speed. Since the steps are sequentially performed, the substrate can be efficiently cleaned.

【0105】請求項5の発明に係るチップ実装方法によ
れば、振動させたエアーを吹き出すことによって基板に
付着したゴミや汚れ等を剥がし取り、エアーを吸引する
ことによって、剥がし取られたゴミや汚れ等をエアーと
ともに吸引排出するので、ゴミや汚れ等は他部へ飛び散
ることなく除去することができる。
According to the chip mounting method according to the fifth aspect of the present invention, dust or dirt attached to the substrate is removed by blowing out vibrated air, and the dust or dirt is removed by sucking air. Since dirt and the like are sucked and discharged together with the air, dust and dirt can be removed without scattering to other parts.

【0106】請求項6に記載の発明に係るチップ実装方
法によれば、洗浄液を含浸させた帯状の不織布を巻き取
りながら、この不織布を基板に作用させているので、基
板に付着しているゴミ粉じんや汚れの拭き取り除去を効
率良く行うことができる。また、不織布に捕獲されたゴ
ミ粉じんなどが基板に再付着することもない。
According to the chip mounting method of the sixth aspect of the present invention, the non-woven fabric is applied to the substrate while winding the band-shaped non-woven fabric impregnated with the cleaning liquid, so that the dust adhering to the substrate is removed. Dust and dirt can be efficiently wiped and removed. Further, dust and the like captured by the nonwoven fabric do not adhere to the substrate again.

【0107】請求項7に記載の発明に係るチップ実装方
法によれば、不織布を基板の表裏両面に作用させている
ので、基板の表裏両面が効率よく洗浄することができ
る。
According to the chip mounting method of the present invention, since the nonwoven fabric acts on both the front and back surfaces of the substrate, the front and back surfaces of the substrate can be efficiently cleaned.

【0108】請求項8に記載の発明によれば、個別の不
織布を基板の表裏面にそれぞれ作用させているので、基
板裏面のゴミ粉や汚れが基板表面に付着したり、その逆
の現象を抑制して基板を良好に洗浄することができる。
According to the eighth aspect of the present invention, since the individual nonwoven fabrics act on the front and back surfaces of the substrate, dust and dirt on the back surface of the substrate adhere to the surface of the substrate and vice versa. The substrate can be satisfactorily cleaned by suppressing the above.

【0109】請求項9に記載の発明によれば、基板の進
行方向に対して逆方向へ不織布を巻き取りながら不織布
を基板に作用させて洗浄しているので、基板を良好に洗
浄することができる。
According to the ninth aspect of the present invention, since the nonwoven fabric is applied to the substrate and washed while the nonwoven fabric is being wound in the direction opposite to the direction of travel of the substrate, the substrate can be cleaned well. it can.

【0110】請求項10の発明に係るチップ実装方法に
よれば、大気圧下でプラズマを発生させているので、真
空中でプラズマを発生させて洗浄を行う場合と比べて、
プラズマ洗浄を容易に行うことができる。
According to the chip mounting method according to the tenth aspect of the present invention, since plasma is generated under the atmospheric pressure, cleaning is performed by generating plasma in a vacuum.
Plasma cleaning can be easily performed.

【0111】請求項11の発明に係るチップ実装方法に
よれば、大気圧下でガス通過管内に電圧を加えてプラズ
マを発生させているので、基板に対してチャージ電圧を
印加する必要がなく、その結果、チャージ電圧による基
板の破壊(例えば、基板上の回路パターンなどの剥離や
破壊)を防止することがてきる。
According to the chip mounting method of the eleventh aspect, since a plasma is generated by applying a voltage to the gas passage tube under the atmospheric pressure, it is not necessary to apply a charge voltage to the substrate. As a result, destruction of the substrate due to the charge voltage (for example, peeling or destruction of a circuit pattern or the like on the substrate) can be prevented.

【0112】請求項12の発明に係るチップ実装方法に
よれば、ガラス基板にチップを高品位に実装することが
できる。
According to the chip mounting method of the twelfth aspect, a chip can be mounted on a glass substrate with high quality.

【0113】請求項13の発明に係るチップ実装方法に
よれば、基板を10〜100mm/秒の速度で搬送しな
がら洗浄処理を行うので、基板を効果的に、かつ効率よ
く洗浄することができる。
According to the chip mounting method of the thirteenth aspect, since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate can be effectively and efficiently cleaned. .

【0114】請求項14の発明に係る基板洗浄装置によ
れば、エアーブロー洗浄手段とプラズマ洗浄手段とにわ
たって基板を搬送して洗浄を行うので、人手を介するこ
となく、基板の洗浄処理を効率よく行うことができる。
According to the substrate cleaning apparatus of the fourteenth aspect, the substrate is transported and cleaned between the air blow cleaning means and the plasma cleaning means, so that the substrate cleaning process can be efficiently performed without manual operation. It can be carried out.

【0115】請求項15の発明に係る基板洗浄装置によ
れば、拭き取り洗浄手段とプラズマ洗浄手段とにわたっ
て基板を搬送して洗浄を行うので、人手を介することな
く、基板の洗浄処理を効率よく行うことができる。
According to the apparatus for cleaning a substrate according to the fifteenth aspect of the present invention, the substrate is transported and cleaned between the wiping cleaning means and the plasma cleaning means, so that the substrate cleaning process can be efficiently performed without manual operation. be able to.

【0116】請求項16の発明に係る基板洗浄装置によ
れば、エアーブロー洗浄手段と拭き取り洗浄手段とプラ
ズマ洗浄手段とにわたって基板を搬送して洗浄を行うの
で、人手を介することなく、基板の洗浄処理を効率よく
行うことができる。
According to the substrate cleaning apparatus of the sixteenth aspect of the present invention, the substrate is transported and cleaned across the air blow cleaning means, the wiping cleaning means, and the plasma cleaning means. Processing can be performed efficiently.

【0117】請求項17の発明に係る基板洗浄装置によ
れば、基板表面の拭き取り洗浄用と基板裏面の拭き取り
洗浄用の2つの拭き取り洗浄手段を使って基板表裏面が
個別に洗浄されるので、基板裏面のゴミ粉や汚れが基板
表面に付着したり、その逆の現象が抑制され、基板を良
好に洗浄することができる。
According to the seventeenth aspect of the present invention, the front and back surfaces of the substrate are individually cleaned using two wiping and cleaning means for wiping the surface of the substrate and for wiping the rear surface of the substrate. Dust powder and dirt on the back surface of the substrate are prevented from adhering to the substrate surface, and the opposite phenomenon is suppressed, and the substrate can be cleaned well.

【0118】請求項18の発明に係る基板洗浄装置によ
れば、基板の進行方向に対して逆方向へ不織布を巻き取
りながら、この不織布を基板に作用させているので、基
板を良好に洗浄することができる。
According to the eighteenth aspect of the present invention, the nonwoven fabric is applied to the substrate while the nonwoven fabric is being wound in the direction opposite to the traveling direction of the substrate. be able to.

【0119】請求項19の発明に係る基板洗浄装置によ
れば、各洗浄手段が搬送経路に沿って隣接配置されてい
るので、コンパクトな装置で基板の洗浄処理を効率よく
行うことができる。
According to the nineteenth aspect of the present invention, since the respective cleaning means are arranged adjacent to each other along the transport path, the substrate can be efficiently cleaned by a compact apparatus.

【0120】請求項20に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板を効果的に、かつ効率よく洗浄すること
ができる。
According to the twentieth aspect of the present invention, since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate can be effectively and efficiently cleaned.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例に係るチップ実装方法の工程図である。FIG. 1 is a process chart of a chip mounting method according to an embodiment.

【図2】実施例に係る基板洗浄装置の概略構成を示す全
体斜視図である。
FIG. 2 is an overall perspective view showing a schematic configuration of a substrate cleaning apparatus according to an embodiment.

【図3】本実施例に係るエアーブロー洗浄手段の構成を
示す斜視図である。
FIG. 3 is a perspective view illustrating a configuration of an air blow cleaning unit according to the present embodiment.

【図4】本実施例に係る拭き取り洗浄手段の構成を示す
斜視図である。
FIG. 4 is a perspective view illustrating a configuration of a wiping and cleaning unit according to the present embodiment.

【図5】本実施例に係るプラズマ洗浄手段の構成を示す
斜視図である。
FIG. 5 is a perspective view illustrating a configuration of a plasma cleaning unit according to the present embodiment.

【図6】チップ実装位置が単辺の場合の基板の保持状態
を示す図である。
FIG. 6 is a diagram illustrating a holding state of a substrate when a chip mounting position is a single side;

【図7】チップ実装位置が複数辺の場合の基板の保持状
態を示す図である。
FIG. 7 is a diagram illustrating a holding state of a substrate when a chip mounting position is on a plurality of sides.

【図8】変形例に係る基板保持部の構成を示す図であ
る。
FIG. 8 is a diagram illustrating a configuration of a substrate holding unit according to a modification.

【図9】他の変形例に係る基板保持部の構成を示す図で
ある。
FIG. 9 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図10】他の変形例に係る基板保持部の構成を示す図
である。
FIG. 10 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図11】他の変形例に係る基板保持部の構成を示す図
である。
FIG. 11 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図12】他の変形例に係る基板保持部の構成を示す図
である。
FIG. 12 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図13】他の変形例に係る基板保持部の構成を示す図
である。
FIG. 13 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図14】他の変形例に係る基板保持部の構成を示す図
である。
FIG. 14 is a diagram illustrating a configuration of a substrate holding unit according to another modification.

【図15】変形例に係るエアーブロー洗浄手段の構成を
示す図である。
FIG. 15 is a diagram showing a configuration of an air blow cleaning unit according to a modification.

【図16】変形例に係るプラズマ洗浄手段の構成を示す
図である。
FIG. 16 is a diagram showing a configuration of a plasma cleaning unit according to a modification.

【図17】変形例に係る拭き取り洗浄手段の構成を示す
図である。
FIG. 17 is a diagram showing a configuration of a wiping / cleaning unit according to a modification.

【図18】回転制御可能に構成された場合の基板保持部
の構成を示す図である。
FIG. 18 is a diagram illustrating a configuration of a substrate holding unit when configured to be capable of rotation control.

【符号の説明】[Explanation of symbols]

7 … 基板搬送手段 8 … 基板 13 … エアーブロー洗浄手段 21 … 拭き取りテープ 22 … 拭き取り洗浄手段 25 … プラズマ洗浄手段 26 … 可動テーブル 27 … 基板洗浄装置 7 substrate transfer means 8 substrate 13 air blow cleaning means 21 wiping tape 22 wiping cleaning means 25 plasma cleaning means 26 movable table 27 substrate cleaning device

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成13年10月31日(2001.10.
31)
[Submission date] October 31, 2001 (2001.10.
31)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0017[Correction target item name] 0017

【補正方法】削除[Correction method] Deleted

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0018[Correction target item name] 0018

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0018】請求項11に記載の発明は、請求項1から
請求項10のいずれかに記載のチップ実装方法におい
て、前記基板は、ガラス基板である。
[0018] The invention according to claim 11 is the invention according to claim 1
11. The chip mounting method according to claim 10 , wherein the substrate is a glass substrate.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0019[Correction target item name] 0019

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0019】請求項12に記載の発明は、請求項4に記
載のチップ実装方法において、前記搬送経路を通過する
基板の通過速度が、10〜100mm/秒である。
According to a twelfth aspect of the present invention, in the chip mounting method of the fourth aspect, a passing speed of the substrate passing through the transport path is 10 to 100 mm / sec.

【手続補正5】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0020[Correction target item name] 0020

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0020】請求項13に記載の発明は、請求項1に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板にエアーブロー洗浄を
行うエアーブロー洗浄手段と、エアーブロー洗浄された
基板にプラズマ洗浄を行うプラズマ洗浄手段と、エアー
ブロー洗浄手段とプラズマ洗浄手段とにわたって基板を
搬送移動させる基板搬送手段とを備えたことを特徴とす
る。
According to a thirteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the first aspect, wherein air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is attached. And plasma cleaning means for performing plasma cleaning on the substrate subjected to the air blow cleaning, and substrate transport means for transporting and moving the substrate across the air blow cleaning means and the plasma cleaning means.

【手続補正6】[Procedure amendment 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0021[Correction target item name] 0021

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0021】請求項14に記載の発明は、請求項2に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板に拭き取り洗浄を行う
拭き取り洗浄手段と、拭き取り洗浄された基板にプラズ
マ洗浄を行うプラズマ洗浄手段と、拭き取り洗浄手段と
プラズマ洗浄手段とにわたって基板を搬送移動させる基
板搬送手段とを備えたことを特徴とする。
According to a fourteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the second aspect, wherein a wiping and cleaning means for wiping and cleaning the substrate before the adhesive is attached thereto; Plasma cleaning means for performing plasma cleaning on the wiped and cleaned substrate, and substrate transport means for transporting and moving the substrate across the wiping and cleaning means are provided.

【手続補正7】[Procedure amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0022[Correction target item name] 0022

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0022】請求項15に記載の発明は、請求項3に記
載のチップ実装方法に用いられる基板洗浄装置であっ
て、接着剤が付着される前の基板にエアーブロー洗浄を
行うエアーブロー洗浄手段と、エアーブロー洗浄された
基板に拭き取り洗浄を行う拭き取り洗浄手段と、拭き取
り洗浄された基板にプラズマ洗浄を行うプラズマ洗浄手
段と、エアーブロー洗浄手段と拭き取り洗浄手段とプラ
ズマ洗浄手段とにわたって基板を搬送移動させる基板搬
送手段とを備えたことを特徴とする。
According to a fifteenth aspect of the present invention, there is provided a substrate cleaning apparatus used in the chip mounting method according to the third aspect, wherein air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is attached. And wiping and cleaning means for wiping and cleaning the air-blown substrate; plasma cleaning means for performing plasma cleaning on the wiping-cleaned substrate; and transporting the substrate between the air-blowing cleaning means, the wiping and cleaning means, and the plasma cleaning means. And a substrate transfer means for moving.

【手続補正8】[Procedure amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0023[Correction target item name] 0023

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0023】請求項16に記載の発明は、請求項14ま
たは請求項15に記載の基板洗浄装置において、前記拭
き取り洗浄手段は、基板表面の拭き取り洗浄用と基板裏
面の拭き取り洗浄用の2つが個別に配備されている。
The invention described in claim 16 is the same as in claim 14
Alternatively, in the substrate cleaning apparatus according to the fifteenth aspect , the wiping and cleaning means is provided separately for wiping and cleaning the substrate surface and for wiping and cleaning the rear surface of the substrate.

【手続補正9】[Procedure amendment 9]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0024[Correction target item name] 0024

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0024】請求項17に記載の発明は、請求項14か
ら請求項16のいずれかに記載の基板洗浄装置におい
て、前記拭き取り洗浄手段は、基板の進行方向に対して
逆方向へ不織布を巻き取りながら、不織布を基板に作用
させて基板を洗浄する。
[0024] The invention according to claim 17 or claim 14
17. The substrate cleaning apparatus according to claim 16 , wherein the wiping and cleaning means cleans the substrate by applying the nonwoven fabric to the substrate while winding the nonwoven fabric in a direction opposite to a traveling direction of the substrate.

【手続補正10】[Procedure amendment 10]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0025[Correction target item name] 0025

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0025】請求項18に記載の発明は、請求項13か
ら請求項17のいずれかに記載の基板洗浄装置におい
て、前記基板搬送手段は、基板を一定速度で搬送し、か
つ、前記各洗浄手段は基板の搬送経路に沿って隣接配置
されている。
The invention according to claim 18 is the invention according to claim 13.
18. The substrate cleaning apparatus according to claim 17 , wherein the substrate transport means transports the substrate at a constant speed, and each of the cleaning means is arranged adjacently along a transport path of the substrate.

【手続補正11】[Procedure amendment 11]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0026[Correction target item name] 0026

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0026】請求項19に記載の発明は、請求項18
記載の基板洗浄装置において、前記基板搬送手段は、1
0〜100mm/秒の速度で基板を搬送する。
According to a nineteenth aspect of the present invention, in the substrate cleaning apparatus according to the eighteenth aspect , the substrate transporting means may include:
The substrate is transported at a speed of 0 to 100 mm / sec.

【手続補正12】[Procedure amendment 12]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0036[Correction target item name] 0036

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0036】請求項10に記載の発明によれば、大気圧
下でプラズマを発生させているので、真空中でプラズマ
を発生させる場合と比べて、基板を搬送しながらプラズ
マ洗浄を行いやすい。さらに、好ましくは、プラズマ洗
浄工程で、大気圧下でガス通過管内に電圧を加えてプラ
ズマを発生させることで基板を洗浄するように構成す
る。このように構成することで、大気圧下でガス通過管
内に電圧を加えてプラズマを発生させているので、基板
にチャージ電圧を加えることなくプラズマのみを基板に
作用させて基板の洗浄が行われる。
According to the tenth aspect of the present invention, since plasma is generated under the atmospheric pressure, it is easier to perform plasma cleaning while transporting the substrate than in the case where plasma is generated in a vacuum. Further, preferably, plasma washing
During the cleaning process, a voltage is applied to the gas
The substrate is configured to be cleaned by generating
You. With this configuration, the gas passage pipe can be
Since voltage is applied inside to generate plasma, the substrate
Only plasma to substrate without applying charge voltage
The cleaning of the substrate is effected.

【手続補正13】[Procedure amendment 13]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0037[Correction target item name] 0037

【補正方法】削除[Correction method] Deleted

【手続補正14】[Procedure amendment 14]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0038[Correction target item name] 0038

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0038】請求項11に記載の発明によれば、接着剤
を付着する前にガラス基板が効果的に洗浄され、ガラス
基板にチップが高品位に実装される。
According to the eleventh aspect of the present invention, the glass substrate is effectively cleaned before the adhesive is applied, and the chip is mounted on the glass substrate with high quality.

【手続補正15】[Procedure amendment 15]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0039[Correction target item name] 0039

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0039】請求項12に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板が効果的に、かつ効率よく洗浄される。
According to the twelfth aspect of the present invention, the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec. Therefore, the substrate is effectively and efficiently cleaned.

【手続補正16】[Procedure amendment 16]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0040[Correction target item name] 0040

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0040】請求項13に記載の発明によれば、エアー
ブロー洗浄手段とプラズマ洗浄手段とを備えた基板洗浄
装置によって、接着剤付着前の基板に対してエアーブロ
ー洗浄とプラズマ洗浄とがその順に行われる。
According to the thirteenth aspect of the present invention, the substrate cleaning apparatus provided with the air blow cleaning means and the plasma cleaning means performs the air blow cleaning and the plasma cleaning on the substrate before the adhesive is applied in this order. Done.

【手続補正17】[Procedure amendment 17]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0041[Correction target item name] 0041

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0041】請求項14に記載の発明によれば、拭き取
り洗浄手段とプラズマ洗浄手段とを備えた基板洗浄装置
によって、接着剤付着前の基板に対して拭き取り洗浄と
プラズマ洗浄とがその順に行われる。
According to the fourteenth aspect of the present invention, the substrate cleaning apparatus provided with the wiping cleaning means and the plasma cleaning means performs the wiping cleaning and the plasma cleaning on the substrate before the adhesive is applied in that order. .

【手続補正18】[Procedure amendment 18]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0042[Correction target item name] 0042

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0042】請求項15に記載の発明によれば、エアー
ブロー洗浄手段と拭き取り洗浄手段とプラズマ洗浄手段
とを備えた基板洗浄装置によって、接着剤付着前の基板
に対してエアーブロー洗浄と拭き取り洗浄とプラズマ洗
浄とがその順に行われる。
According to the fifteenth aspect of the present invention, the substrate cleaning apparatus provided with the air blow cleaning means, the wiping cleaning means, and the plasma cleaning means performs air blow cleaning and wiping cleaning on the substrate before the adhesive is applied. And plasma cleaning are performed in that order.

【手続補正19】[Procedure amendment 19]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0043[Correction target item name] 0043

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0043】請求項16に記載の発明によれば、基板表
面の拭き取り洗浄用と基板裏面の拭き取り洗浄用の2つ
の拭き取り洗浄手段を使って基板表裏面が個別に洗浄さ
れる。
According to the sixteenth aspect of the present invention, the front and rear surfaces of the substrate are individually cleaned using two wiping and cleaning means for wiping and cleaning the surface of the substrate and for wiping and cleaning the rear surface of the substrate.

【手続補正20】[Procedure amendment 20]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0044[Correction target item name] 0044

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0044】請求項17に記載の発明によれば、基板の
進行方向に対して逆方向へ不織布を巻き取りながら、こ
の不織布を基板に作用させて基板が洗浄される。
According to the seventeenth aspect of the present invention, the non-woven fabric is applied to the substrate while the non-woven fabric is being wound in the direction opposite to the traveling direction of the substrate, and the substrate is washed.

【手続補正21】[Procedure amendment 21]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0045[Correction target item name] 0045

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0045】請求項18に記載の発明によれば、搬送経
路に沿って隣接配置された各洗浄手段が、基板搬送手段
によって一定速度で搬送されている基板に対して、各洗
浄処理を順に行う。
According to the eighteenth aspect of the present invention, each of the cleaning means arranged adjacently along the transport path sequentially performs each of the cleaning processes on the substrate being transported at a constant speed by the substrate transport means. .

【手続補正22】[Procedure amendment 22]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0046[Correction target item name] 0046

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0046】請求項19に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板が効果的に、かつ効率よく洗浄される。
According to the nineteenth aspect , since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate is effectively and efficiently cleaned.

【手続補正23】[Procedure amendment 23]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0110[Correction target item name] 0110

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0110】請求項10の発明に係るチップ実装方法に
よれば、大気圧下でプラズマを発生させているので、真
空中でプラズマを発生させて洗浄を行う場合と比べて、
プラズマ洗浄を容易に行うことができる。さらに、好ま
しくは、プラズマ洗浄工程で、大気圧下でガス通過管内
に電圧を加えてプラズマを発生させることで基板を洗浄
するように構成する。このように構成することで、大気
圧下でガス通過管内に電圧を加えてプラズマを発生させ
ているので、基板に対してチャージ電圧を印加する必要
がなく、その結果、チャージ電圧による基板の破壊(例
えば、基板上の回路パターンなどの剥離や破壊)を防止
することができる。
According to the chip mounting method according to the tenth aspect of the present invention, since plasma is generated under the atmospheric pressure, cleaning is performed by generating plasma in a vacuum.
Plasma cleaning can be easily performed. In addition, preferred
Or, in the plasma cleaning process, at atmospheric pressure
Cleans the substrate by applying voltage to it and generating plasma
It is constituted so that. With this configuration, the atmosphere
A plasma is generated by applying a voltage to the gas passage tube under pressure.
Need to apply charge voltage to the substrate
And as a result, the substrate is destroyed by the charge voltage (eg
For example, peeling or destruction of circuit patterns on the substrate)
can do.

【手続補正24】[Procedure amendment 24]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0111[Correction target item name] 0111

【補正方法】削除[Correction method] Deleted

【手続補正25】[Procedure amendment 25]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0112[Correction target item name] 0112

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0112】請求項11の発明に係るチップ実装方法に
よれば、ガラス基板にチップを高品位に実装することが
できる。
According to the chip mounting method of the eleventh aspect , a chip can be mounted on a glass substrate with high quality.

【手続補正26】[Procedure amendment 26]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0113[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0113】請求項12の発明に係るチップ実装方法に
よれば、基板を10〜100mm/秒の速度で搬送しな
がら洗浄処理を行うので、基板を効果的に、かつ効率よ
く洗浄することができる。
According to the chip mounting method of the twelfth aspect of the present invention, since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate can be cleaned effectively and efficiently. .

【手続補正27】[Procedure amendment 27]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0114[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0114】請求項13の発明に係る基板洗浄装置によ
れば、エアーブロー洗浄手段とプラズマ洗浄手段とにわ
たって基板を搬送して洗浄を行うので、人手を介するこ
となく、基板の洗浄処理を効率よく行うことができる。
According to the substrate cleaning apparatus of the thirteenth aspect, since the substrate is transported and cleaned between the air blow cleaning means and the plasma cleaning means, the cleaning processing of the substrate can be efficiently performed without manual operation. It can be carried out.

【手続補正28】[Procedure amendment 28]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0115[Correction target item name] 0115

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0115】請求項14の発明に係る基板洗浄装置によ
れば、拭き取り洗浄手段とプラズマ洗浄手段とにわたっ
て基板を搬送して洗浄を行うので、人手を介することな
く、基板の洗浄処理を効率よく行うことができる。
According to the substrate cleaning apparatus of the fourteenth aspect, the substrate is transported and cleaned between the wiping cleaning means and the plasma cleaning means, so that the substrate cleaning process can be performed efficiently without manual intervention. be able to.

【手続補正29】[Procedure amendment 29]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0116[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0116】請求項15の発明に係る基板洗浄装置によ
れば、エアーブロー洗浄手段と拭き取り洗浄手段とプラ
ズマ洗浄手段とにわたって基板を搬送して洗浄を行うの
で、人手を介することなく、基板の洗浄処理を効率よく
行うことができる。
According to the apparatus for cleaning a substrate according to the fifteenth aspect of the present invention, the substrate is transported and cleaned between the air blow cleaning means, the wiping cleaning means, and the plasma cleaning means. Processing can be performed efficiently.

【手続補正30】[Procedure amendment 30]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0117[Correction target item name] 0117

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0117】請求項16の発明に係る基板洗浄装置によ
れば、基板表面の拭き取り洗浄用と基板裏面の拭き取り
洗浄用の2つの拭き取り洗浄手段を使って基板表裏面が
個別に洗浄されるので、基板裏面のゴミ粉や汚れが基板
表面に付着したり、その逆の現象が抑制され、基板を良
好に洗浄することができる。
According to the substrate cleaning apparatus of the sixteenth aspect, the front and rear surfaces of the substrate are individually cleaned using two wiping cleaning means for wiping the substrate surface and wiping the substrate back surface. Dust powder and dirt on the back surface of the substrate are prevented from adhering to the substrate surface, and the opposite phenomenon is suppressed, and the substrate can be cleaned well.

【手続補正31】[Procedure amendment 31]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0118[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0118】請求項17の発明に係る基板洗浄装置によ
れば、基板の進行方向に対して逆方向へ不織布を巻き取
りながら、この不織布を基板に作用させているので、基
板を良好に洗浄することができる。
According to the seventeenth aspect of the present invention, the non-woven fabric is applied to the substrate while winding the non-woven fabric in the direction opposite to the direction in which the substrate moves, so that the substrate can be cleaned well. be able to.

【手続補正32】[Procedure amendment 32]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0119[Correction target item name] 0119

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0119】請求項18の発明に係る基板洗浄装置によ
れば、各洗浄手段が搬送経路に沿って隣接配置されてい
るので、コンパクトな装置で基板の洗浄処理を効率よく
行うことができる。
According to the apparatus for cleaning a substrate according to the eighteenth aspect of the present invention, since the respective cleaning means are arranged adjacent to each other along the transport path, the substrate can be efficiently cleaned by a compact apparatus.

【手続補正33】[Procedure amendment 33]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0120[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0120】請求項19に記載の発明によれば、基板を
10〜100mm/秒の速度で搬送しながら洗浄処理を
行うので、基板を効果的に、かつ効率よく洗浄すること
ができる。
According to the nineteenth aspect , since the cleaning process is performed while transporting the substrate at a speed of 10 to 100 mm / sec, the substrate can be effectively and efficiently cleaned.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/52 H01L 21/52 F Fターム(参考) 2H088 FA17 FA18 FA21 FA30 HA01 HA05 MA20 2H090 HC18 JB02 JC19 3B116 AA02 AB14 BA08 BB24 BB32 BB83 BC01 5F044 LL07 LL09 PP15 5F047 BA21 FA31 FA66 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/52 H01L 21/52 FF Term (Reference) 2H088 FA17 FA18 FA21 FA30 HA01 HA05 MA20 2H090 HC18 JB02 JC19 3B116 AA02 AB14 BA08 BB24 BB32 BB83 BC01 5F044 LL07 LL09 PP15 5F047 BA21 FA31 FA66

Claims (20)

【特許請求の範囲】[Claims] 【請求項1】 基板に接着剤を付着させる接着剤付着工
程と、接着剤が付着された基板にチップを接合させるチ
ップ接合工程とを備えたチップ実装方法において、 接着剤付着工程の前に、基板に対してエアーブロー洗浄
を行うエアーブロー洗浄工程と、基板に対してプラズマ
洗浄を行うプラズマ洗浄工程とをその順に配置してなる
基板洗浄工程を備え、 エアーブロー洗浄工程とプラズマ洗浄工程とにわたって
基板を搬送移動させることにより、基板に対してエアー
ブロー洗浄とプラズマ洗浄とを連続して行うことを特徴
とするチップ実装方法。
1. A chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive has been attached. A substrate cleaning step is provided in which an air blow cleaning step of performing air blow cleaning on the substrate and a plasma cleaning step of performing plasma cleaning on the substrate are arranged in this order. A chip mounting method, wherein air blow cleaning and plasma cleaning are continuously performed on a substrate by transporting the substrate.
【請求項2】 基板に接着剤を付着させる接着剤付着工
程と、接着剤が付着された基板にチップを接合させるチ
ップ接合工程とを備えたチップ実装方法において、 接着剤付着工程の前に、基板に対して拭き取り洗浄を行
う拭き取り洗浄工程と、基板に対してプラズマ洗浄を行
うプラズマ洗浄工程とをその順に配置してなる基板洗浄
工程を備え、 拭き取り洗浄工程とプラズマ洗浄工程とにわたって基板
を搬送移動させることにより、基板に対して拭き取り洗
浄とプラズマ洗浄とを連続して行うことを特徴とするチ
ップ実装方法。
2. A chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive has been attached. A substrate cleaning process is provided in which a wiping cleaning process for wiping and cleaning the substrate and a plasma cleaning process for performing plasma cleaning on the substrate are arranged in this order, and the substrate is transported between the wiping cleaning process and the plasma cleaning process. A chip mounting method, wherein wiping cleaning and plasma cleaning are continuously performed on a substrate by moving the substrate.
【請求項3】 基板に接着剤を付着させる接着剤付着工
程と、接着剤が付着された基板にチップを接合させるチ
ップ接合工程とを備えたチップ実装方法において、 接着剤付着工程の前に、基板に対してエアーブロー洗浄
を行うエアーブロー洗浄工程と、基板に対して拭き取り
洗浄を行う拭き取り洗浄工程と、基板に対してプラズマ
洗浄を行うプラズマ洗浄工程とをその順に配置してなる
基板洗浄工程を備え、 エアーブロー洗浄工程と拭き取り洗浄工程とプラズマ洗
浄工程とにわたって基板を搬送移動させることにより、
基板に対してエアーブロー洗浄と拭き取り洗浄とプラズ
マ洗浄とを連続して行うことを特徴とするチップ実装方
法。
3. A chip mounting method comprising: an adhesive attaching step of attaching an adhesive to a substrate; and a chip joining step of joining a chip to the substrate to which the adhesive is attached. A substrate cleaning process in which an air blow cleaning process of performing air blow cleaning on a substrate, a wiping cleaning process of performing wiping cleaning on a substrate, and a plasma cleaning process of performing plasma cleaning on a substrate are arranged in this order. By transporting and moving the substrate over the air blow cleaning process, the wiping cleaning process, and the plasma cleaning process,
A chip mounting method comprising continuously performing air blow cleaning, wiping cleaning, and plasma cleaning on a substrate.
【請求項4】 請求項1から請求項3のいずれかに記載
のチップ実装方法において、 前記基板洗浄工程では、基板の搬送経路に沿って各々の
洗浄工程を隣接配置し、搬送経路を一定の速さで通過す
る基板に対して各々の洗浄処理を順に行うチップ実装方
法。
4. The chip mounting method according to claim 1, wherein in the substrate cleaning step, each cleaning step is arranged adjacently along a substrate transport path, and the transport path is fixed. A chip mounting method for sequentially performing each cleaning process on a substrate passing at a high speed.
【請求項5】 請求項1または請求項3に記載のチップ
実装方法において、 前記エアーブロー洗浄工程では、振動させたエアーを基
板に向けて吹き出すとともに、吹き出したエアーを吸引
排出することによって基板を洗浄するチップ実装方法。
5. The chip mounting method according to claim 1, wherein in the air blow cleaning step, the vibrated air is blown toward the substrate, and the blown air is suctioned and discharged to remove the substrate. Chip mounting method to be cleaned.
【請求項6】 請求項2または請求項3に記載のチップ
実装方法において、 前記拭き取り洗浄工程では、洗浄液を含浸させた帯状の
不織布を巻き取りながら、この不織布を基板に作用させ
て基板を洗浄するチップ実装方法。
6. The chip mounting method according to claim 2, wherein in the wiping and cleaning step, the substrate is washed by winding the band-shaped nonwoven fabric impregnated with a cleaning liquid while allowing the nonwoven fabric to act on the substrate. Chip mounting method.
【請求項7】 請求項6に記載のチップ実装方法におい
て、 前記拭き取り洗浄工程では、不織布を基板の表裏両面に
作用させて基板を洗浄するチップ実装方法。
7. The chip mounting method according to claim 6, wherein in the wiping and cleaning step, the nonwoven fabric is applied to both front and back surfaces of the substrate to clean the substrate.
【請求項8】 請求項7に記載のチップ実装方法におい
て、 前記拭き取り洗浄工程では、個別の不織布を基板の表裏
両面にそれぞれ作用させて基板を洗浄するチップ実装方
法。
8. The chip mounting method according to claim 7, wherein in the wiping and cleaning step, a nonwoven fabric is applied to each of the front and back surfaces of the substrate to clean the substrate.
【請求項9】 請求項6から請求項8のいずれかに記載
のチップ実装方法において、 前記拭き取り洗浄工程では、基板の進行方向に対して逆
方向へ不織布を巻き取っているチップ実装方法
9. The chip mounting method according to claim 6, wherein in the wiping and cleaning step, the nonwoven fabric is wound in a direction opposite to a direction in which the substrate advances.
【請求項10】 請求項1から請求項9のいずれかに記
載のチップ実装方法において、 前記プラズマ洗浄工程では、大気圧下でプラズマを発生
させて基板を洗浄するチップ実装方法。
10. The chip mounting method according to claim 1, wherein in the plasma cleaning step, plasma is generated under atmospheric pressure to clean the substrate.
【請求項11】 請求項10に記載のチップ実装方法に
おいて、 前記プラズマ洗浄工程では、大気圧下でガス通過管内に
電圧を加えてプラズマを発生させることによって、基板
を洗浄するチップ実装方法。
11. The chip mounting method according to claim 10, wherein in the plasma cleaning step, a substrate is cleaned by applying a voltage to a gas passage tube under atmospheric pressure to generate plasma.
【請求項12】 請求項1から請求項11のいずれかに
記載のチップ実装方法において、 前記基板は、ガラス基板であるチップ実装方法。
12. The chip mounting method according to claim 1, wherein the substrate is a glass substrate.
【請求項13】 請求項4に記載のチップ実装方法にお
いて、 前記搬送経路を通過する基板の通過速度が、10〜10
0mm/秒であるチップ実装方法。
13. The chip mounting method according to claim 4, wherein a passing speed of the substrate passing through the transport path is 10 to 10.
A chip mounting method of 0 mm / sec.
【請求項14】 請求項1に記載のチップ実装方法に用
いられる基板洗浄装置であって、 接着剤が付着される前の基板にエアーブロー洗浄を行う
エアーブロー洗浄手段と、 エアーブロー洗浄された基板にプラズマ洗浄を行うプラ
ズマ洗浄手段と、 エアーブロー洗浄手段とプラズマ洗浄手段とにわたって
基板を搬送移動させる基板搬送手段とを備えたことを特
徴とする基板洗浄装置。
14. A substrate cleaning apparatus used in the chip mounting method according to claim 1, wherein air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is applied, and wherein the air blow cleaning is performed. A substrate cleaning apparatus comprising: a plasma cleaning unit that performs plasma cleaning on a substrate; and a substrate transport unit that transports and moves the substrate across the air blow cleaning unit and the plasma cleaning unit.
【請求項15】 請求項2に記載のチップ実装方法に用
いられる基板洗浄装置であって、 接着剤が付着される前の基板に拭き取り洗浄を行う拭き
取り洗浄手段と、 拭き取り洗浄された基板にプラズマ洗浄を行うプラズマ
洗浄手段と、 拭き取り洗浄手段とプラズマ洗浄手段とにわたって基板
を搬送移動させる基板搬送手段とを備えたことを特徴と
する基板洗浄装置。
15. A substrate cleaning apparatus used in the chip mounting method according to claim 2, wherein a wiping cleaning means for wiping and cleaning the substrate before the adhesive is applied, and a plasma cleaning method for the wiping and cleaning substrate. A substrate cleaning apparatus comprising: plasma cleaning means for performing cleaning; and substrate transport means for transporting and moving a substrate across the wiping cleaning means and the plasma cleaning means.
【請求項16】 請求項3に記載のチップ実装方法に用
いられる基板洗浄装置であって、 接着剤が付着される前の基板にエアーブロー洗浄を行う
エアーブロー洗浄手段と、 エアーブロー洗浄された基板に拭き取り洗浄を行う拭き
取り洗浄手段と、 拭き取り洗浄された基板にプラズマ洗浄を行うプラズマ
洗浄手段と、 エアーブロー洗浄手段と拭き取り洗浄手段とプラズマ洗
浄手段とにわたって基板を搬送移動させる基板搬送手段
とを備えたことを特徴とする基板洗浄装置。
16. A substrate cleaning apparatus used in the chip mounting method according to claim 3, wherein: an air blow cleaning means for performing air blow cleaning on the substrate before the adhesive is attached; A wiping cleaning means for wiping and cleaning the substrate; a plasma cleaning means for performing plasma cleaning on the wiping-cleaned substrate; and a substrate transport means for transporting the substrate across the air blow cleaning means, the wiping cleaning means, and the plasma cleaning means. A substrate cleaning apparatus, comprising:
【請求項17】 請求項15または請求項16に記載の
基板洗浄装置において、 前記拭き取り洗浄手段は、基板表面の拭き取り洗浄用と
基板裏面の拭き取り洗浄用の2つが個別に配備されてい
る基板洗浄装置。
17. The substrate cleaning apparatus according to claim 15, wherein the wiping and cleaning unit is provided with two units, one for wiping and cleaning the surface of the substrate and the other for wiping and cleaning the rear surface of the substrate. apparatus.
【請求項18】 請求項15から請求項17のいずれか
に記載の基板洗浄装置において、 前記拭き取り洗浄手段は、基板の進行方向に対して逆方
向へ不織布を巻き取りながら、不織布を基板に作用させ
て基板を洗浄する基板洗浄装置。
18. The substrate cleaning apparatus according to claim 15, wherein the wiping and cleaning unit applies the nonwoven fabric to the substrate while winding the nonwoven fabric in a direction opposite to a direction in which the substrate travels. A substrate cleaning device that cleans a substrate.
【請求項19】 請求項14から請求項18のいずれか
に記載の基板洗浄装置において、 前記基板搬送手段は、基板を一定速度で搬送し、 かつ、前記各洗浄手段は基板の搬送経路に沿って隣接配
置されている基板洗浄装置。
19. The substrate cleaning apparatus according to claim 14, wherein said substrate transport means transports the substrate at a constant speed, and said cleaning means travels along a substrate transport path. And a substrate cleaning device disposed adjacent to the substrate cleaning device.
【請求項20】 請求項19に記載の基板洗浄装置にお
いて、 前記基板搬送手段は、10〜100mm/秒の速度で基
板を搬送する基板洗浄装置。
20. The substrate cleaning apparatus according to claim 19, wherein the substrate transport unit transports the substrate at a speed of 10 to 100 mm / sec.
JP2000231664A 2000-07-31 2000-07-31 Chip mounting method and substrate cleaning apparatus used therefor Expired - Lifetime JP4363756B2 (en)

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