JP2009136728A - Substrate cleaning device, and substrate cleaning method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate cleaning device which can securely clean the surface to be cleaned of a substrate during one time relative moving process of the substrate, and a substrate cleaning method. <P>SOLUTION: The substrate cleaning device is provided with a plurality of cleaning means 4, 5, 6 cleaning the surface to be cleaned of the substrate 1 in parallel with one another, and is further provided with a moving means 3 relatively moving the surface to be cleaned of the substrate 1 with respect to the cleaning means 4, 5, 6. The first cleaning means constituting a plurality of the cleaning means 4, 5, 6 is a plasma cleaning means 6 blowing off atmospheric-pressure plasma, and the plasma cleaning means 6 comprises: an inductively coupled plasma generation part 33 blowing off the primary plasma 36 composed of the inductively coupled plasma of the first inert gas; and a plasma expansion part 37 making the first plasma 36 collide with the mixed gas region 40 of the second inert gas and reactive gas collide, and generating the secondary plasma 41 composed of the mixed gas made into plasma. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate cleaning apparatus and a cleaning method for cleaning surfaces to be cleaned of various substrates such as glass substrates for liquid crystal displays and plasma displays.

  Conventionally, in the manufacturing process of the glass substrate, there is a process of mounting various components on the electrodes formed on the side edges of the glass substrate. In the mounting process, a cleaning process is performed to remove dirt adhering to the side edge where the electrode is arranged on the supplied glass substrate, and then the anisotropic conductive material is applied to the side edge where the electrode is arranged. An ACF attaching process for attaching a film (ACF) is performed, and then a component is supplied to the electrode placement position and temporarily bonded, and then a process of applying pressure and heat higher than the temporary bonding and performing a final bonding is performed.

  As a substrate cleaning apparatus for cleaning the surface deposits on the side edge of the substrate, a tape-shaped cleaning cloth is supplied to the surface of the pressing element facing the substrate surface, and the cleaning cloth feed direction is better than the facing surface of the pressing element. On the side, the cleaning liquid made of ethanol or other organic solvent is discharged from the discharge head toward the cleaning cloth, and the pressing cloth and the substrate are held in a state where the cleaning cloth containing the cleaning liquid is pressed against the side edge of the substrate by the pressing element. A substrate that is relatively moved so as to clean the surface of the side edge of the substrate is known (see, for example, Patent Document 1).

  In addition, the first and second cleaning units and the first and second substrate holding units that perform different cleanings are arranged in parallel in a single apparatus, and the substrate is held by each substrate holding unit. In other words, the substrate is passed through each cleaning unit, the substrate is cleaned by each, and the substrate is transferred to each substrate holding unit by a substrate transfer means (see, for example, Patent Document 2). . As the contents of cleaning, for example, the first cleaning unit performs ultrasonic air blow cleaning and atmospheric pressure plasma cleaning, and the second cleaning unit performs wiping cleaning and ultrasonic air blow cleaning. Yes.

  A configuration example of this type of conventional substrate cleaning apparatus will be described with reference to FIG. Reference numeral 101 denotes a substrate of an object to be cleaned. Reference numeral 102 denotes a wiping / cleaning unit, which is a wiping / cleaning means 103 for wiping and cleaning with a cleaning cloth soaked with a cleaning liquid, and holds the substrate 101 and is positioned in the Z direction perpendicular to the horizontal XY direction and the θ direction around the Z axis. Moving means 104 is provided. A plasma cleaning unit 105 is a plasma that is cleaned by irradiating an atmospheric pressure plasma generated by applying a high-frequency voltage between electrodes arranged while sandwiching the reaction space while supplying a gas to the reaction space near the atmospheric pressure. A cleaning unit 106 and a moving unit 107 similar to the above for positioning and moving the substrate 101 are provided. 108 is a conveying means for wiping the substrate 101 between the cleaning unit 102 and the plasma cleaning unit 105.

In the cleaning process of the substrate 101, the substrate 101 carried into the wiping cleaning unit 102 is held by the transfer means (not shown) by the moving means 104, and the substrate 101 is positioned and moved by the wiping cleaning means 103 to move the substrate 101. Wipe and clean the entire length of the area to be cleaned or the area to be cleaned. Next, the substrate 101 is transferred to the transfer means 108 and transferred to the plasma cleaning unit 105. The transported substrate 101 is held by the moving means 107, the substrate 101 is positioned and moved by the plasma cleaning means 106, and the entire length of the portion to be cleaned or the region to be cleaned is plasma cleaned. Thereafter, the operation of unloading the substrate 101 toward the next process by unloading means (not shown) is repeated.
Japanese Patent No. 3503512 JP 2005-99595 A

  By the way, there is a problem that if a component is mounted as it is in a state where dirt, dust, a glass piece or the like is adhered on the substrate 101, there is a problem that a bonding failure occurs. As the immediately preceding process, a process of wiping and cleaning the substrate surface with a cleaning cloth containing a cleaning liquid is performed. In addition, when an organic solvent such as ethanol or IPA (isopropyl alcohol) is applied as the cleaning liquid, it can be effectively removed not only when dust and glass pieces are attached to the substrate but also when oil is attached.

  In addition, an oxide film or nickel may be deposited on the electrode provided on the substrate, and even in this case, there is a problem in that joining the components as it is may cause a bonding failure. Foreign substances such as an oxide film on the substrate electrode can be removed by irradiation with atmospheric pressure plasma. Therefore, as described with reference to FIG. 17, for example, after wiping and cleaning by the wiping and cleaning unit 102, it is transported to the plasma cleaning unit 105 and irradiated with atmospheric pressure plasma to be cleaned. Occurrence can be suppressed.

  However, conventionally, wiping cleaning means using an organic solvent and plasma cleaning means using atmospheric pressure plasma composed of relatively large parallel plate electrodes are arranged in parallel at a short distance, particularly for cleaning small substrates and the like. However, as described in Patent Document 2 and shown in FIG. 17, a plurality of cleaning apparatuses each provided with each cleaning means and a moving means for holding and moving the substrate are separately provided. In addition, it is necessary to have a configuration in which the transfer means is connected between them, and a plurality of devices and a transfer device between them are required for the cleaning process, and there is a problem that the equipment cost increases.

  In view of the above-described conventional problems, an object of the present invention is to provide a substrate cleaning apparatus and a cleaning method that can reliably clean a surface to be cleaned of a substrate during one relative movement process of the substrate.

  The substrate cleaning apparatus of the present invention is provided with a plurality of cleaning means for cleaning the surface to be cleaned of the substrate in parallel and a moving means for moving the surface to be cleaned of the substrate relative to the plurality of cleaning means, The first cleaning means constituting the plurality of cleaning means is a plasma cleaning means that blows out atmospheric pressure plasma, and the plasma cleaning means is an inductively coupled type that blows out primary plasma composed of inductively coupled plasma of the first inert gas. A plasma generating unit; and a plasma developing unit that generates a secondary plasma composed of a mixed gas obtained by causing the primary plasma to collide with the mixed gas region of the second inert gas and the reactive gas.

  According to this configuration, it is possible to remove the oxide film on the surface to be cleaned and improve wettability by spraying atmospheric pressure plasma from the first cleaning means. In particular, the atmospheric pressure plasma has plasma density. When the primary plasma composed of high inductively coupled plasma collides with the mixed gas region of the second inert gas and the reactive gas, the second inert gas is turned into a plasma in an avalanche phenomenon (or ball collision). The reactive gas is developed into plasma by the radical of the second inert gas that has been developed and turned into plasma in the mixed gas region, and as a result, a secondary plasma having a high plasma density and a low plasma temperature is generated. By blowing out the next plasma and performing plasma treatment, it is possible to move the substrate in a compact configuration and ensure that the surface to be cleaned is not damaged by heat. Therefore, other cleaning means can be arranged in parallel with this plasma cleaning means, and other cleaning means such as removal of other dirt and foreign matter on the surface to be cleaned can be performed by other cleaning means. It can be performed simultaneously, and the surface to be cleaned can be reliably cleaned during a single movement process of the substrate, and can be efficiently cleaned with a simple apparatus configuration.

  Further, the plurality of cleaning means include a first cleaning means and a second cleaning means, and the second cleaning means is a wiping means for wiping and cleaning the surface to be cleaned of the substrate with a tape-like cleaning cloth containing a cleaning liquid. When the cleaning means is used, it is possible to surely remove even if oil or the like adheres to the surface to be cleaned by wiping and cleaning with a cleaning cloth containing a cleaning liquid. Here, when an organic solvent or ozone water is used as the cleaning liquid, the cleaning effect is large and suitable, and the plasma temperature irradiated from the plasma cleaning means is low. Although the temperature is close to room temperature, there is no problem even if an organic solvent is applied. However, a means for exhausting the portion to be cleaned by the wiping cleaning means is preferably provided.

  Further, the wiping and cleaning means includes a pressing element pressed against the surface to be cleaned of the substrate, a cleaning cloth feeding means for intermittently sending the cleaning cloth to the surface of the pressing element facing the surface to be cleaned, and a cleaning liquid to the cleaning cloth. When the cleaning liquid supply means for discharging is configured, cleaning is performed by moving the substrate and the pressing element relative to each other while the cleaning cloth containing the cleaning liquid is pressed against the surface to be cleaned on the opposite surface of the pressing element. The surface to be cleaned of the substrate can be reliably wiped and cleaned with a cloth.

  In addition, a pair or a plurality of pairs of pressing elements are arranged so as to sandwich the side edge portion of the substrate having the surface to be cleaned from both sides, and the moving means relatively moves the pressing elements along the side edge portion of the substrate. In this case, the surface to be cleaned on both the front and back sides of the side edge of the substrate can be cleaned at the same time, and it is not necessary to support the side edge of the substrate from the back side. Can be.

  In addition, when the first and second cleaning means are arranged in parallel in the relative movement direction of the surface to be cleaned of the substrate, the first cleaning unit performs the first cleaning on the same surface to be cleaned with the relative movement of the substrate. The removal of the oxide film by the plasma cleaning of the cleaning means, the removal of deposited nickel and the improvement of wettability, and the cleaning of foreign matter and oil by the wiping cleaning of the second cleaning means are performed in succession. The cleaning surface can be in a high quality cleaning state.

  The plurality of cleaning means include a first cleaning means and a third cleaning means, and the third cleaning means blows ionized ultrasonic air toward the surface to be cleaned of the substrate and sucks it on both sides. With ultrasonic cleaning means, spraying ultrasonic air on the surface to be cleaned and sucking it on both sides of the ultrasonic air blow off blows away various particles such as dust adhering to the surface to be cleaned. In addition, since the ultrasonic air is ionized, the particles peeled off from the surface to be cleaned are immediately neutralized, and the peeled particles can be prevented from being charged and reattached.

  Further, the third cleaning means can be arranged in parallel with the first cleaning means in parallel with the relative movement direction of the surface to be cleaned of the substrate or facing the substrate. When arranged in parallel in the relative movement direction, with the relative movement of the substrate, with respect to the same surface to be cleaned, removal of the oxide film by plasma cleaning of the first cleaning means, removal of deposited nickel, and improvement of wettability The surface to be cleaned can be brought into a high-quality cleaning state by removing particles by blowing ultrasonic air from the third cleaning means. In addition, when the substrates are placed facing each other, particles on the surface to be cleaned on the back side of the substrate are removed simultaneously with plasma cleaning of the surface to be cleaned, so that the front and back of the surface to be cleaned can be contacted without contact. Therefore, it is possible to clean efficiently and reliably without applying a large external force.

  In addition, when the first to third cleaning means are arranged in parallel in the relative movement direction of the surface to be cleaned of the substrate, the surface to be cleaned of the substrate is subjected to plasma cleaning, wiping cleaning, and ultrasonic cleaning. As a result, it is possible to reliably ensure a high-quality cleaning state even when various foreign substances adhere to the surface to be cleaned. For example, ultrasonic cleaning removes relatively large deposits and adhering particles that may occur during plasma cleaning, fine dust and oil are removed by wiping cleaning, oxide film and deposited nickel by plasma cleaning, etc. The surface to be cleaned can be cleaned with extremely high quality by removing the water and improving the wettability.

  The first substrate cleaning method of the present invention includes a plasma cleaning step in which atmospheric pressure plasma is blown toward the surface to be cleaned of the substrate to perform plasma cleaning, and a substrate-like substrate is covered with a tape-like cleaning cloth impregnated with a cleaning solution. The wiping and cleaning step of wiping and cleaning the cleaning surface is performed in parallel at positions spaced in the moving direction while relatively moving the surface to be cleaned of the substrate, and the plasma cleaning is the first inactive Generating a primary plasma comprising a gas inductively coupled plasma, causing the generated primary plasma to collide with a mixed gas of a second inert gas and a reactive gas to generate a secondary plasma comprising a mixed gas; The generated secondary plasma is sprayed onto the surface to be cleaned of the substrate, and the secondary plasma having a high plasma density and a low plasma temperature is blown out as described above. By performing the process, the surface to be cleaned can be reliably cleaned without causing thermal damage, and in addition to this plasma cleaning, the surface can be cleaned by wiping with a cleaning cloth. The foreign matter and oil can be cleaned at the same time, and the surface to be cleaned can be reliably and efficiently cleaned during the single movement process of the substrate.

  Further, the wiping cleaning is performed by discharging the cleaning liquid onto the cleaning cloth, impregnating the cleaning cloth with the cleaning liquid, and pressing the surface impregnated with the cleaning liquid toward the surface to be cleaned of the pressing element facing the surface to be cleaned. When the pressing member is relatively moved along the surface to be cleaned of the substrate, the surface to be cleaned of the substrate can be reliably wiped and cleaned with the cleaning cloth.

  Further, the second substrate cleaning method of the present invention includes a plasma cleaning step in which atmospheric pressure plasma is sprayed toward the surface to be cleaned of the substrate to perform plasma cleaning, and ultrasonic air ionized on the surface to be cleaned of the substrate is An ultrasonic cleaning step of spraying and cleaning the surface to be cleaned is performed in parallel while relatively moving the surface to be cleaned of the substrate, and the plasma cleaning is performed by inductively coupled plasma of the first inert gas. A primary plasma comprising: a secondary plasma comprising a mixed gas formed by causing the generated primary plasma to collide with a mixed gas of a second inert gas and a reactive gas, and generating the generated secondary plasma. This is performed by spraying on the surface to be cleaned of the substrate. As described above, the plasma processing is performed by blowing out the secondary plasma having a high plasma density and a low plasma temperature. Plasma cleaning can be performed reliably without causing thermal damage to the surface, and by cleaning with ultrasonic air in parallel with this plasma cleaning, particles adhering to the surface to be cleaned can be simultaneously cleaned. Thus, the surface to be cleaned can be reliably and efficiently cleaned during a single movement process of the substrate.

  Further, the ultrasonic cleaning step can be performed on the surface to be cleaned of the substrate in parallel with the plasma cleaning step, or can be performed on the back surface side of the surface to be cleaned of the substrate. When the surface to be cleaned is performed in parallel with the plasma cleaning process, the removal of oxide film by plasma cleaning, the removal of deposited nickel and the improvement of wettability, and the removal of particles by spraying ultrasonic air are in succession. As a result, the surface to be cleaned can be cleaned at a high quality. In addition, if it is performed on the back side of the surface to be cleaned, plasma cleaning of the surface to be cleaned and removal of particles on the back side are performed at the same time. Can be efficiently and surely cleaned without being acted on.

  The third substrate cleaning method of the present invention includes a plasma cleaning step in which atmospheric pressure plasma is blown toward the surface to be cleaned of the substrate to perform plasma cleaning, and a substrate covering by a tape-shaped cleaning cloth impregnated with a cleaning solution. The surface to be cleaned of the substrate includes a wiping and cleaning step for wiping and cleaning the surface to be cleaned, and an ultrasonic cleaning step for blowing and cleaning ionized ultrasonic air onto the surface to be cleaned of the substrate toward the surface to be cleaned. The plasma cleaning is performed in parallel at a position spaced in the moving direction while moving the plasma, and the plasma cleaning generates a primary plasma composed of inductively coupled plasma of the first inert gas, and the generated primary plasma is A secondary plasma composed of a mixed gas that is made into plasma by colliding with a mixed gas of a second inert gas and a reactive gas is generated, and the generated secondary plasma is sprayed on the surface to be cleaned of the substrate. As described above, the surface to be cleaned of the substrate is subjected to plasma cleaning, wiping cleaning and ultrasonic cleaning in succession, so that even if various foreign substances are attached to the surface to be cleaned, it is ensured. A high-quality cleaning state can be ensured.

  According to the substrate cleaning apparatus and the cleaning method of the present invention, the surface to be cleaned is subjected to the plasma treatment by blowing out the secondary plasma having a high plasma density and a low plasma temperature from the first cleaning means constituting the plurality of cleaning means. It is possible to clean the plasma without causing heat damage, and by arranging other cleaning means in parallel with this plasma cleaning means, cleaning such as removal of other foreign matters on the surface to be cleaned Can be performed at the same time, the surface to be cleaned can be reliably cleaned during a single moving step of the substrate, and the cleaning can be efficiently performed with a simple apparatus configuration.

  Hereinafter, each embodiment in which the present invention is applied to a substrate cleaning apparatus that cleans a surface to be cleaned of a side edge portion of a glass substrate of a liquid crystal display panel and removes adhered foreign substances will be described with reference to FIGS. explain.

(First embodiment)
First, a substrate cleaning apparatus according to a first embodiment of the present invention will be described with reference to FIGS.

  1 to 5, the substrate cleaning apparatus according to the present embodiment includes a substrate transfer means 2 that carries a substrate 1 such as a glass substrate into the substrate cleaning apparatus, and a movement that accompanies the cleaning operation after receiving the substrate 1 from the substrate transfer means 2. Moving means 3 for performing the cleaning, ultrasonic cleaning means 4 for cleaning by blowing ionized ultrasonic air onto the surface to be cleaned on the side edge of the substrate 1, and the surfaces to be cleaned on both the front and back surfaces of the side edge of the substrate 1 A wiping and cleaning means 5 for wiping and cleaning, and a plasma cleaning means 6 for blowing out atmospheric pressure plasma to the surface to be cleaned at the side edge of the substrate 1 and performing plasma cleaning, are each disposed on a base 19. Yes. The unloading of the substrate 1 is performed by a substrate transfer means (not shown) similar to the substrate transfer means 2 provided in an ACF sticking apparatus (not shown) as a subsequent process.

  The substrate transport means 2 reciprocates the substrate platform 7 having a pair of support arms 7a, 7a for placing and supporting the substrate 1 in both directions, and the substrate platform 7 in the X direction which is the substrate transport direction. The drive mechanism 8 is used. The drive mechanism 8 includes a support rail portion 8a that movably supports the substrate platform 6, and a feed screw mechanism 8b that is driven by a motor 8c to move the substrate platform 7.

  The moving means 3 includes a substrate holding portion 9 for placing and supporting the central portion of the substrate 1, the substrate holding portion 9 in the X direction, the Y direction orthogonal thereto, the vertical Z direction, and the θ direction around the Z axis. The moving table 10 is used for moving and positioning. The moving means 3 holds and moves the substrate 1 on the substrate holding section 9, so that the surface of the side edge of the substrate 1 and the one end to the other end of the surface to be cleaned are ultrasonic cleaning means. 4. Relative movement is performed so as to pass through a wiping / cleaning section 20 and a plasma cleaning means 6 described later in the wiping / cleaning means 5. The relative movement speed is set to about 40 to 250 mm / s, preferably about 100 to 250 mm / s.

  Next, the ultrasonic cleaning means 4 will be described. As shown in FIGS. 2 to 5, the ultrasonic cleaning means 4 includes a central blowing portion 11 and suction portions 12 on both sides of the blowing portion 11 so as to be aligned along the moving direction (cleaning direction) of the substrate 1. ing. When the compressed air 13 is supplied from a compressed air source (not shown), the blowing unit 11 generates ultrasonic vibrations at the ultrasonic generation unit 14 and is ionized by being ionized by the built-in ionizer 15. The ultrasonic air 16 is blown out, the suction unit 12 is connected to a suction source (not shown), and the ultrasonic air 16 blown to the surface to be cleaned is blown by the ultrasonic air 16 to be cleaned. It is comprised so that it may attract with the particle which peeled from.

  According to the ultrasonic cleaning means 4, the ionized ultrasonic air 16 is blown from the blowing portion 11 to the surface to be cleaned, and is sucked by the suction portions 12 on both sides of the blowout port of the ultrasonic air 16. Various particles 17 such as dust adhering to the surface are effectively blown off and sucked and removed, and since the ultrasonic air 16 is ionized, the particles 17 separated from the surface to be cleaned are immediately discharged, and the separated particles Since 17 can be prevented from being charged and reattached, it can be reliably washed.

  Next, the wiping / cleaning means 5 will be described. As shown in FIGS. 2 to 4, the wiping / cleaning unit 20 includes a pair of pressing elements 21 a and 21 b arranged so as to face the upper and lower sides of the side edge of the substrate 1 held by the substrate holding unit 9. I have. The pressers 21a and 21b are preferably made of a material such as polyacetal (POM) that is excellent in chemical resistance and slidable. Then, both pressing elements 21a and 21b are opened and closed by a chuck mechanism (not shown), and a tape-like cleaning cloth is applied to the surfaces to be cleaned on both upper and lower sides of the side edge of the substrate 1 by these pressing elements 21a and 21b. It is comprised so that 22 may be pressed. The chucking force of both the pressing elements 21a and 21b is preferably about 4 to 9N. The pressing elements 21a and 21b and the chuck mechanism (not shown) are elastically supported in the vertical direction so as to absorb the positional deviation from the height position of the substrate 1.

  As shown in FIG. 1, the cleaning cloth 22 is provided corresponding to the pressing elements 21 a and 21 b, and is supplied from the supply reels 23 a and 23 b serving as cleaning cloth feeding means via the guide rollers 24 as appropriate. It is supplied to the pressing elements 21a and 21b from a direction orthogonal to the relative movement direction of 21b. The supplied cleaning cloth 22 is guided to the facing surface 25 through a guide portion 26 that is inclined on the upper side of the facing surface 25 that faces the surface to be cleaned of the substrate 1 in the pressing members 21a and 21b. The cleaning cloth 22 after being cleaned by being brought into contact with the surface to be cleaned of the substrate 1 at the opposing surface 25 is wound around the collection reels 27a and 27b through the guide roller 24 as appropriate. The tension applied to the cleaning cloth 22 is about 0.5 to 1.8N. The cleaning cloth 22 is pitch-fed for each cleaning operation by the supply reels 23a and 23b and the recovery reels 27a and 27b.

  Discharge ports 28 are opened in the guide portions 26 of the pressing elements 21a and 21b so that an aqueous solution of an organic solvent such as ethanol or IPA (isopropyl alcohol) is discharged toward the cleaning cloth 22 as a cleaning liquid. Before the cleaning cloth 22 is pitch-fed, the cleaning liquid is pressure-fed by a predetermined amount from a cleaning liquid supply means (not shown) to the discharge port 28 through a flow path provided in the pressing elements 21a and 21b. It is discharged toward. A detection sensor 29 that detects a change in color tone caused by the cleaning cloth 22 getting wet with the cleaning liquid is disposed opposite to the guide portions 26 of the pressing elements 21a and 21b, and a required amount of ozone water is properly discharged to the cleaning cloth 22. It is configured so that it can be confirmed.

  On the opposing surface 25 of the pressing elements 21a, 21b, a protrusion 25a is formed extending in a direction orthogonal to the relative movement direction of the pressing elements 21a, 21b. The length l of the facing surface 25 and the protrusion 25a is set larger than the width dimension of the surface to be cleaned of the substrate 1. The height h of the protrusion 25a is preferably about 3 to 5 times the thickness of the cleaning cloth 22, and in the specific example, the thickness of the cleaning cloth 22 is 0.2 to 0.3 mm. The height of 25a is preferably about 1 mm. In addition, on both sides of the facing surface 25 of the pressing elements 12a and 21b, there are provided regulating projections 25b that regulate the positions of both side edges of the cleaning cloth 22 with an interval on both sides of the projection 25a. The height h1 of the restricting protrusion 25b is set to the same height as the height h of the protrusion 25a, and the top surfaces of the protrusion 25a and the restricting protrusion 25b are configured to be on the same plane.

  Next, the plasma cleaning means 6 will be described with reference to FIGS. A coiled antenna 33 is disposed around a cylindrical reaction vessel 32 made of a dielectric material that forms a reaction space 31 having a circular cross section, and a high frequency voltage is applied to the antenna 33 from a high frequency power source 34 to generate a high frequency in the reaction space 31. An electric field is applied, the first inert gas 35 is supplied from the upper end of the reaction vessel 32, and a high voltage is applied and ignited by an ignition device (not shown) to ignite the plasma density from the lower end of the reaction vessel 32. The primary plasma 36 made of high temperature inductively coupled plasma (thermal plasma) is blown out. This reaction vessel 32 constitutes an inductively coupled plasma generating unit.

  A rectangular tube-shaped mixed gas container 37 is disposed around the vicinity of the lower end of the reaction container 32, and a plurality of gases supplying a mixed gas 38 of a second inert gas and a reactive gas to the inside thereof at the upper part of the four peripheral walls. A supply port 39 is provided. The mixed gas container 37 extends downward from the lower end of the reaction container 32, and the lower end open mixed gas region 40 where the primary plasma 36 collides with a portion below the lower end of the reaction container 32 to generate the secondary plasma 41. Is formed. This mixed gas container 37 constitutes a plasma developing part.

  As the high frequency power supply 34 for supplying a high frequency voltage to the antenna 33, a VHF frequency band whose output frequency band is typified by 100 MHz is suitable, but a microwave frequency band or the like can also be used. A matching unit (not shown) that suppresses a reflected wave generated by the antenna 33 is interposed between the high-frequency power source 34 and the antenna 33. In addition, as the first and second inert gases, a single gas or a mixed gas selected from argon, neon, xenon, helium, and nitrogen is applied. As the reactive gas, oxygen gas suitable for electrode cleaning and surface modification is applied in the present embodiment.

  In the plasma cleaning means 6, as shown in FIGS. 2 and 4, in order to prevent the generated ozone gas from flowing out to the surroundings, the plasma cleaning means 6 is covered with a cover body 42 and the internal gas is supplied to an exhaust fan (not shown). It is configured to be sucked out and detoxified, and then released into the atmosphere. Further, as shown in FIG. 4, the wiping / cleaning unit 20 is also provided with an exhaust means 43 for sucking the surrounding atmosphere, and is configured to prevent the generated organic solvent gas from flowing out to the surroundings. .

  As a specific configuration example of the exhaust means 43 provided in the wiping / cleaning unit 20, as shown in FIG. 6, a suction port member 44 having an intake port is provided in the vicinity of the lower portion of the wiping / cleaning unit 20, and suction is performed. Suction is performed by an exhaust fan 46 disposed under the base 19 through a pipe 45. An exhaust port of the exhaust fan 46 is connected to an exhaust duct (not shown) of factory equipment by an exhaust duct 47. Further, in order to detect that the surrounding atmosphere is reliably sucked and discharged by the exhaust fan 46, an outside air suction pipe 48 is branched and connected to a position near the suction port of the suction port member 44. The tip is disposed at an obliquely upper position away from the upper space of the wiping cleaning unit 20, a filter 49 is attached to the opening end, and the flow rate detecting means 50 is disposed directly below the filter 49. Thereby, when the atmosphere containing the organic solvent gas in the vicinity of the wiping / cleaning unit 20 is sucked, the flow rate detection means 50 detects the flow rate of the outside air sucked into the outside air suction pipe 48, so that an inexpensive flow rate detection means is obtained. 50 can detect the suction state in the vicinity of 20 parts of the wiping / cleaning part.

  Next, the process of cleaning the surface to be cleaned at the side edge of the substrate 1 with the substrate cleaning apparatus having such a configuration will be described mainly with reference to FIGS. 1 to 4 and 7. First, the substrate 1 is carried into the substrate cleaning apparatus by the substrate transfer means 2. The loaded substrate 1 is received on the substrate holding unit 9 of the moving unit 3, and the side edge portion which is the cleaning region of the substrate 1 is moved by the ultrasonic cleaning unit 4, the wiping cleaning unit 20 and the plasma cleaning unit. The movement is controlled so as to sequentially pass through the means 5. Therefore, first, the moving means 3 is positioned so that one end of the side edge portion of the substrate 1 faces the ultrasonic cleaning means 4. In parallel with this carrying-in operation, the cleaning liquid is discharged from the discharge port 28 to the cleaning cloth 22 facing the guide portion 26, and the cleaning cloth 22 is impregnated with a required amount of cleaning liquid. Note that the detection sensor 29 detects that the cleaning cloth 22 sufficiently contains the cleaning liquid.

  Next, by moving the side edge of the substrate 1 as described above by the moving means 3, the surface to be cleaned of the substrate 1 passes under the ultrasonic cleaning means 4 and becomes the surface to be cleaned as described above. By ionized ultrasonic air 16 being blown and sucked on both sides thereof, various particles 17 such as relatively large dust adhering to the surface to be cleaned are effectively blown off and immediately discharged. Ultrasonic cleaning is effectively performed by the ultrasonic air 16 which is sucked and ionized without reattaching. When the movement of the side edge portion of the substrate 1 is started, a predetermined amount of the cleaning cloth 22 is fed by the wiping cleaning unit 20, and the opposing surface 25 of the pressing elements 21 a and 21 b and the surface to be cleaned of the substrate 1 are A part containing the cleaning agent is fed in between.

  Next, when one end of the surface to be cleaned of the substrate 1 is positioned between the pair of pressers 21 a and 21 b in the wiping cleaning unit 20 as the substrate 1 is moved by the moving unit 3, the chuck mechanism of the wiping cleaning unit 20 A cleaning cloth 22 in which a gap between the pair of pressing elements 21a and 21b is closed by a not-shown and impregnated with a cleaning liquid in a protrusion 25a formed on the opposing surface 25 of the pressing elements 21a and 21b is the substrate 1. It will be in the state contacted to the surface to be cleaned. In this way, the substrate 1 continues to move in a state where the cleaning cloth 22 is in contact with the surface to be cleaned of the substrate 1 at the protrusions 25a of the pressing members 21a and 21b, and the pressing members 21a and 21b are moved to the substrate 1 side. By moving relative to the other end of the surface to be cleaned along the edge, fine glass pieces adhering on the surface to be cleaned of substrate 1 and dirt 18 such as dust and oil are impregnated with the cleaning liquid. The cleaning cloth 22 is effectively wiped and cleaned. When the wiping / cleaning section 20 moves relative to the other end of the surface to be cleaned, the pair of pressing elements 21a and 21b are opened by a chuck mechanism (not shown).

  Next, the surface to be cleaned of the substrate 1 passes under the plasma cleaning means 6 and is irradiated with atmospheric pressure plasma to perform atmospheric pressure plasma cleaning. In the atmospheric pressure plasma cleaning by the plasma cleaning means 6, the mixed gas 38 is supplied into the mixed gas container 37 while the primary plasma 36 made of inductively coupled plasma is blown from the lower end of the reaction container 32. In the mixed gas region 40, the primary plasma 36 collides with the mixed gas 38 to generate a secondary plasma 41. The secondary plasma 41 develops in the entire region of the mixed gas region 40 and is further downward from the mixed gas region 40. To blow out. The secondary plasma 41 has a plasma temperature lower than that of the primary plasma 36 (about 250 ° C.) (about 80 ° C.) and a conventional capacitively coupled plasma composed of parallel plate electrodes having a low plasma density. The plasma density is as high as several tens to several hundreds. By irradiating the surface to be cleaned of the substrate 1 with the secondary plasma 41, desired plasma processing can be efficiently performed in a short time.

  In addition, in the parallel plate electrode method that is a capacitive coupling type of the conventional atmospheric pressure plasma cleaning method, plasma is generated between the electrodes, but in order to improve the relative plasma density for processing, the electrode is applied to the substrate to be processed. However, when the secondary plasma 41 of the present invention is sprayed, the distance to the substrate can be reduced to about 2 mm, and the plasma density is high. Can be granted. As described above, appropriate plasma processing can be reliably performed even when the substrate 1 is moved at about 100 to 150 mm / sec. The temperature of the substrate cleaning surface at this time is about 40 ° C.

  The primary plasma 36 having a role of a plasma ignition function for the high-density secondary plasma 41 diffused by the collision of the primary plasma 36 is an inductively coupled plasma that directly irradiates the substrate with the primary plasma which is another conventional example ( Compared with the thermal plasma method, a small amount of inert gas is ignited, so the output is as low as about 50 W and the calorific value is as low as about 250 ° C., and the antenna 33 can be air-cooled. In addition, since the secondary plasma 41 expands greatly in this way, plasma processing in a large area compared to the cross-sectional area of the reaction vessel 32 can be performed efficiently and reliably in a short time. In addition, the irradiation / stop control of the secondary plasma 41 can be performed with good responsiveness by the supply / stop control of the mixed gas 38, and a necessary portion during the movement of the substrate 1 can be performed. Only plasma treatment is possible. As described above, a compact high-pressure plasma cleaning can be configured with a high-density plasma having a low output power ratio with a low output.

  Thereafter, as the substrate 1 is moved by the moving unit 3, the surface to be cleaned is sequentially separated from the ultrasonic cleaning unit 4, the wiping cleaning unit 20, and the plasma cleaning unit 6, and the substrate 1 is a substrate of the ACF attaching apparatus in the subsequent process. It is delivered to a transfer device (not shown) and carried out. And the next board | substrate 1 is carried in in the board | substrate conveyance means 2, and the above washing | cleaning process is repeated.

  According to the present embodiment described above, the particles 17 such as relatively large dust on the surface to be cleaned of the substrate 1 are surely removed by first cleaning with the ultrasonic air 16 ionized by the ultrasonic cleaning means 4. Next, by wiping and cleaning with the cleaning cloth 22 impregnated with the cleaning liquid by the wiping / cleaning unit 20 of the wiping / cleaning means 5, in addition to fine dust and glass pieces adhering to the surface to be cleaned, adhesion The dirt 18 such as the oil component is also reliably removed, and then the atmospheric pressure plasma (secondary plasma 41) is sprayed on the surface to be cleaned of the substrate 1 by the plasma cleaning means 6 so that the surface to be cleaned cannot be seen. It is possible to effectively remove the oxide film and the deposited nickel generated on the electrode on the surface to be cleaned and dirt, and improve the wettability of the surface to be cleaned and improve the bondability. In addition, the surface to be cleaned that has been wetted in the wiping cleaning process can be dried by the heat of the plasma cleaning process, and the next process can be performed quickly. Thus, the surface to be cleaned of the substrate 1 in a single moving process of the substrate 1 with a simple apparatus configuration in which the ultrasonic cleaning means 4, the wiping cleaning means 5 and the plasma cleaning means 6 are arranged in parallel in a single apparatus. All of the different kinds of foreign matters adhering or depositing on the substrate can be surely removed, and the substrate 1 can be cleaned efficiently.

  In the above description, the example in which the ultrasonic cleaning means 4, the wiping cleaning means 5, and the plasma cleaning means 6 are arranged in this order from the upper side to the lower side in the moving direction of the substrate 1 has been shown. The means 4, the plasma cleaning means 6 and the wiping cleaning means 5 are arranged in this order, and as shown in FIG. 8, after ultrasonic cleaning, cleaning with atmospheric pressure plasma is performed, and then wiping cleaning is performed. Also good.

  Further, in the above description, as shown by solid lines in FIGS. 7 and 8, an example in which ultrasonic cleaning by the ultrasonic cleaning means 4 is performed first is shown, but as shown by virtual lines in FIGS. In addition, the ultrasonic cleaning means 4 may be disposed after the plasma cleaning means 6 (in the case of FIG. 7) and the wiping cleaning means 5 (in the case of FIG. 8), and finally ultrasonic cleaning may be performed. . In this case, it is possible to remove extremely fine residue that may be generated when the surface to be cleaned is scraped by atmospheric pressure plasma cleaning. Furthermore, depending on the state of the surface of the substrate 1 to be cleaned, the first ultrasonic cleaning can be omitted.

(Second Embodiment)
Next, a substrate cleaning apparatus according to a second embodiment of the present invention will be described with reference to FIGS. In the following description of the embodiment, components that are substantially the same as those described in the preceding embodiment are denoted by the same reference numerals, description thereof is omitted, and only differences are mainly described.

  In the first embodiment, an example is shown in which the moving means 3 is provided with the single substrate holder 9 that can be moved up and down and rotated on the moving table 10, but in this embodiment, the moving means 3 can be moved up and down and rotated. A plurality (a pair of) of substrate holders 9 and 9 are disposed at a predetermined interval in the moving direction of the substrate 1. Further, the wiping cleaning means 5, the plasma cleaning means 6, and the ultrasonic cleaning means 4 are arranged in this order from the upper side to the lower side in the moving direction of the substrate 1. Further, the cleaning operation area 51 in which the wiping cleaning means 5, the plasma cleaning means 6 and the ultrasonic cleaning means 4 are disposed is accommodated in a size range of about 100 mm. Thereby, the moving range of the moving unit 3 in the X direction is also set in the substrate cleaning apparatus configured such that the entire one or a plurality of substrates 1 held on the substrate holding units 9 and 9 pass through the cleaning operation region 51. The entire structure can be made compact.

  In this configuration, as shown in FIG. 10, when cleaning the surface to be cleaned of the large substrate 1, as shown in FIG. While holding the position biased to one end side and holding the other end of the substrate 1 by the other substrate holding portion 9, the surface to be cleaned 1 a on the long side of the substrate 1 is opposed to the cleaning operation region 51, Cleaning is performed by relatively moving the cleaning operation region 51 along the surface to be cleaned 1a. Thereafter, as shown in FIG. 10B, one substrate holding portion 9 is raised and rotated 90 degrees so that the surface 1b to be cleaned on the short side of the substrate 1 is opposed to the cleaning operation region 51. As shown in FIG. 10C, the cleaning operation region 51 is relatively moved along the surface 1b to be cleaned on the short side to perform cleaning, so that the L-shaped surfaces 1a and 1b of the substrate 1 are cleaned. Wash.

  In addition, as shown in FIG. 11, when the surface to be cleaned of the medium-sized substrate 1 is cleaned, as shown in FIG. In this state, the surface 1a to be cleaned on the long side of each substrate 1 is opposed to the cleaning operation region 51, and the cleaning operation region 51 is relatively moved along the surfaces 1a to be cleaned of both substrates 1 to perform cleaning. . Thereafter, as shown in FIG. 11B, both substrate holding portions 9 are rotated 90 degrees so that the surface 1 b to be cleaned on the short side of each substrate 1 is opposed to the cleaning operation region 51. At that time, the substrate 1 on both the substrate holding portions 9 is brought close to the other substrate holding portion 9 by raising the one substrate holding portion 9 and rotating it 90 degrees so that a step is generated in the height direction. Even if they are arranged, the steps 1 are arranged in the height direction, so that the substrates 1 can be prevented from interfering with each other during rotation. After that, as shown in FIG. 11C, the cleaning operation region 51 is relatively moved along the surface to be cleaned 1b on the short side of both the substrates 1 to perform cleaning, so that the L-shaped of the plurality of substrates 1 is formed. The surfaces to be cleaned 1a and 1b can be cleaned in one step.

  In addition, as shown in FIG. 12, when cleaning the surface to be cleaned in which only one side of the substrate is a target region to be cleaned, like a small substrate 1, as shown in FIG. Since the surface 1a to be cleaned is provided only on the long side of the substrate 1, or the surface 1b to be cleaned is provided only on the short side of the substrate 1 as shown in FIG. As shown in FIG. 12, the side edge of each substrate 1 is held by both substrate holding portions 9, 9, or as shown in FIG. 12B, a jig 52 that holds the substrates 1 in parallel. Is held by both substrate holders 9, 9, the surface to be cleaned 1 a or 1 b of each substrate 1 is opposed to the cleaning operation region 51, and the cleaning operation region is along the surface to be cleaned 1 a or 1 b of each substrate 1. By relatively moving 51, the surface to be cleaned 1a or 1b of each substrate 1 can be cleaned in one step.

(Third embodiment)
Next, a substrate cleaning apparatus according to a third embodiment of the present invention will be described with reference to FIG.

  In the first embodiment, together with the plasma cleaning means 6 and the wiping cleaning means 5, the single ultrasonic cleaning means 4 is disposed so as to face only the surface to be cleaned on the surface (upper surface) side of the substrate 1. Although an example has been shown, in this embodiment, as shown in FIGS. 13A and 13B, the pair of ultrasonic cleaning means 4 is arranged on both the front surface (upper surface) side and the back surface (lower surface) side of the substrate 1. It is arranged to face the surface to be cleaned. According to this configuration, the surface to be cleaned on the back surface (lower surface) side of the substrate 1 is also cleaned by both ultrasonic cleaning and wiping cleaning, thereby ensuring higher cleanliness.

(Fourth embodiment)
Next, a substrate cleaning apparatus according to a fourth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment, the example in which the ultrasonic cleaning means 4, the wiping cleaning means 5 and the plasma cleaning means 6 are arranged in parallel is shown. However, in this embodiment, FIG. As shown in (b), the ultrasonic cleaning means 4 is not provided. When the surface to be cleaned of the substrate 1 brought in from the previous process is relatively clean and particles such as relatively large dust do not adhere so much, the wiping and cleaning means 5 removes dust and oil. Since it can wash | clean at once, it can also be set as such a structure.

(Fifth embodiment)
Next, a substrate cleaning apparatus according to a fifth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment, the example in which the ultrasonic cleaning means 4, the wiping cleaning means 5 and the plasma cleaning means 6 are arranged in parallel has been shown, but in this embodiment, FIG. As shown in (b), the wiping and cleaning means 5 is not disposed, and the pair of ultrasonic cleaning means 4 is opposed to the surface to be cleaned on both the front surface (upper surface) side and the back surface (lower surface) side of the substrate 1. Both surfaces are cleaned by spraying ultrasonic air evenly on the surface to be cleaned of the substrate 1 from above and below. When the cleanliness of the surface to be cleaned of the substrate 1 carried in from the previous process is relatively high, and particularly when there is relatively little dirt and oil content of the strongly adhered organic matter, the surfaces to be cleaned on both the front and back surfaces of the substrate 1 are thus formed. Is cleaned by ultrasonic cleaning, and the surface to be cleaned is then subjected to atmospheric pressure plasma cleaning, so that the surface to be cleaned on the back side can be made free of dust and the surface to be cleaned on the surface side. Organic matter and oil adhering to the surface can be reliably decomposed and cleaned with plasma, and oxide films and deposited nickel can be effectively removed, and the wettability of the surface to be cleaned is improved and bonding properties are improved. Can be improved. Further, in this embodiment, since the cleaning is performed in a non-contact manner instead of being brought into contact as in the wiping cleaning means 5, the thickness of the substrate 1 is reduced from about 0.5 mm to about 0.2 mm. Even if the process is further advanced, there is no fear that the pressing element cannot follow well during the cleaning operation and an excessive stress is applied to cause cracking, which is effective for cleaning the thinned substrate 1.

(Sixth embodiment)
Next, a substrate cleaning apparatus according to a sixth embodiment of the present invention will be described with reference to FIG.

  In the fifth embodiment, the example in which the plasma cleaning means 6 for the surface to be cleaned and the pair of upper and lower ultrasonic cleaning means 4 for the surfaces to be cleaned are arranged in parallel is shown. In this embodiment, as shown in FIGS. 16A and 16B, the substrate 1 is sandwiched between the plasma cleaning means 6 for the surface to be cleaned and the ultrasonic cleaning means 4 for the surface to be cleaned on the back side. Are arranged opposite to each other. In the case where the cleanliness of the surface to be cleaned of the substrate 1 carried in from the previous process is relatively high, and particularly when there is relatively little dust and oil content of the strongly adhered organic matter, the surface to be cleaned on the back surface of the substrate 1 is thus formed. By cleaning with ultrasonic cleaning, and then cleaning the surface to be cleaned with atmospheric pressure plasma, the surface to be cleaned on the back side can be kept free of dust and the surface to be cleaned on the surface side. Adhering organic substances and oils can be reliably decomposed and cleaned with plasma, oxide films and deposited nickel can be removed effectively, and the wettability of the surface to be cleaned is improved to improve the bondability. Can do.

  According to the substrate cleaning apparatus and the cleaning method of the present invention, it is possible to reliably remove different kinds of foreign matters and oils that have adhered or deposited on the surface to be cleaned of the substrate during one relative movement process of the substrate. In addition, since the substrate can be efficiently cleaned with a simple apparatus configuration, it can be suitably used for a component mounting apparatus for mounting various components on various substrates.

The perspective view which shows the whole schematic structure of 1st Embodiment of the board | substrate cleaning apparatus of this invention. The perspective view which shows the washing | cleaning process in the same embodiment. The perspective view which shows the principal part structure of the embodiment. The longitudinal cross-sectional front view which shows the principal part structure of the embodiment. The block diagram of the ultrasonic cleaning means of the embodiment. The perspective view which shows the whole schematic structure of the state which has arrange | positioned the exhaust means in the same embodiment. The flowchart of the board | substrate cleaning operation | movement in the embodiment. The flowchart of the other board | substrate cleaning operation | movement in the same embodiment. The perspective view which shows schematic structure of 2nd Embodiment of the board | substrate cleaning apparatus of this invention. Explanatory drawing of the washing | cleaning process of the large sized substrate in the same embodiment. Explanatory drawing of the washing | cleaning process of the medium-sized board | substrate in the embodiment. Explanatory drawing of the washing | cleaning process of the small substrate in the embodiment. The 3rd Embodiment of the board | substrate cleaning apparatus of this invention is shown, (a) is a perspective view which shows the principal part structure, (b) is the longitudinal cross-sectional front view. The 4th Embodiment of the board | substrate cleaning apparatus of this invention is shown, (a) is a perspective view which shows the principal part structure, (b) is the longitudinal cross-sectional front view. The 5th Embodiment of the board | substrate cleaning apparatus of this invention is shown, (a) is a perspective view which shows the principal part structure, (b) is the longitudinal cross-sectional front view. The 6th Embodiment of the board | substrate cleaning apparatus of this invention is shown, (a) is a perspective view which shows the principal part structure, (b) is the longitudinal cross-sectional front view. The perspective view which shows schematic structure of the board | substrate cleaning apparatus of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 3 Moving means 4 Ultrasonic cleaning means 5 Wiping cleaning means 6 Plasma cleaning means 16 Ionized ultrasonic air 20 Wiping cleaning part 21a, 21b Press 22 Cleaning cloth 23a, 23b Supply reel (cleaning cloth feeding means)
28 Discharge port (ozone water supply means)
32 reaction vessel (inductively coupled plasma generator)
35 1st inert gas 36 Primary plasma 37 Mixed gas container (plasma expansion part)
38 Mixed gas 40 Mixed gas region 41 Secondary plasma

Claims (13)

  A plurality of cleaning means for cleaning the surface to be cleaned of the substrate are arranged in parallel, and a moving means for moving the surface to be cleaned of the substrate relative to the plurality of cleaning means is provided. The first cleaning unit is a plasma cleaning unit that blows out atmospheric pressure plasma. The plasma cleaning unit includes an inductively coupled plasma generating unit that blows out a primary plasma composed of a first inert gas inductively coupled plasma; A substrate cleaning apparatus, comprising: a plasma developing unit that generates a secondary plasma composed of a mixed gas obtained by causing a primary plasma to collide with a mixed gas region of an inert gas and a reactive gas.   The plurality of cleaning means has a first cleaning means and a second cleaning means, and the second cleaning means wipes and cleans the surface to be cleaned of the substrate with a tape-like cleaning cloth containing a cleaning liquid. The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus is a means.   The wiping and cleaning means includes a pressing member pressed against the surface to be cleaned of the substrate, a cleaning cloth feeding unit that intermittently sends the cleaning cloth to the surface of the pressing element facing the surface to be cleaned, and a cleaning liquid is discharged to the cleaning cloth. The substrate cleaning apparatus according to claim 2, further comprising a cleaning liquid supply unit.   A pair or a plurality of pairs of pressing elements are disposed so as to sandwich the side edge portion having the surface to be cleaned of the substrate from both sides, and the moving means relatively moves the pressing elements along the side edge portion of the substrate. The substrate cleaning apparatus according to claim 3.   The substrate cleaning apparatus according to claim 2, wherein the first and second cleaning means are arranged in parallel in a relative movement direction of the surface to be cleaned of the substrate.   The plurality of cleaning means include a first cleaning means and a third cleaning means, and the third cleaning means blows ionized ultrasonic air toward the surface to be cleaned of the substrate, and both sides of the ultrasonic air blowing. The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus is an ultrasonic cleaning unit that sucks the substrate.   7. The third cleaning means is disposed in parallel with the first cleaning means in parallel with the relative movement direction of the surface to be cleaned of the substrate or opposite to the substrate with the substrate interposed therebetween. Substrate cleaning equipment.   7. The substrate cleaning apparatus according to claim 6, wherein the first to third cleaning means are arranged in parallel in the relative movement direction of the surface to be cleaned of the substrate.   A plasma cleaning process in which atmospheric pressure plasma is sprayed toward the surface to be cleaned of the substrate to perform plasma cleaning, and a wiping cleaning process in which the surface to be cleaned of the substrate is wiped and cleaned with a tape-shaped cleaning cloth impregnated with a cleaning liquid. In addition, the surface to be cleaned of the substrate is moved relatively in parallel at positions spaced in the moving direction, and the plasma cleaning generates primary plasma composed of inductively coupled plasma of the first inert gas. Then, the generated primary plasma is collided with the mixed gas of the second inert gas and the reactive gas to generate a secondary plasma composed of the mixed gas, and the generated secondary plasma is sprayed on the surface to be cleaned of the substrate. And a substrate cleaning method.   In wiping and cleaning, the cleaning liquid is discharged onto the cleaning cloth and the cleaning cloth is impregnated with the cleaning liquid, and the portion impregnated with the cleaning liquid is sent to the surface of the pressing element that is pressed toward the surface to be cleaned, facing the surface to be cleaned. The substrate cleaning method according to claim 9, wherein the pressing member is moved relative to the surface to be cleaned of the substrate.   A plasma cleaning process in which atmospheric pressure plasma is blown toward the surface to be cleaned of the substrate to perform plasma cleaning, and an ultrasonic cleaning in which ionized ultrasonic air is sprayed toward the surface to be cleaned of the substrate toward the surface to be cleaned. The process is performed in parallel while relatively moving the surface to be cleaned of the substrate, and the plasma cleaning generates a primary plasma composed of an inductively coupled plasma of a first inert gas, and the generated primary plasma is A secondary plasma comprising a mixed gas which is made into plasma by colliding with a mixed gas of a second inert gas and a reactive gas is generated, and the generated secondary plasma is sprayed on the surface to be cleaned. Substrate cleaning method.   12. The substrate cleaning method according to claim 11, wherein the ultrasonic cleaning step is performed on the surface to be cleaned of the substrate in parallel with the plasma cleaning step or on the back side of the surface to be cleaned of the substrate.   A plasma cleaning process in which atmospheric pressure plasma is blown toward the surface to be cleaned of the substrate to perform plasma cleaning, and a wiping cleaning process in which the surface to be cleaned of the substrate is wiped and cleaned with a tape-shaped cleaning cloth impregnated with a cleaning liquid; An ultrasonic cleaning process in which ultrasonic air ionized on the surface to be cleaned is blown toward the surface to be cleaned is spaced apart in the moving direction while relatively moving the surface to be cleaned. The plasma cleaning is performed in parallel with each other, and the primary cleaning composed of the inductively coupled plasma of the first inert gas is generated, and the generated primary plasma is mixed with the second inert gas and the reactive gas. A substrate cleaning method comprising: generating a secondary plasma comprising a mixed gas that has been made into plasma by colliding with the substrate, and spraying the generated secondary plasma onto a surface to be cleaned of the substrate.

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