JP4946823B2 - Substrate cleaning device - Google Patents

Description

The present invention relates to a substrate cleaning equipment for cleaning a object to be cleaned surfaces of various substrates such as a glass substrate for a liquid crystal display for or a plasma display.

  Conventionally, in the manufacturing process of the glass substrate, there is a process of mounting various components on the electrodes formed on the side edges of the glass substrate. In the mounting process, a cleaning process is performed to remove foreign substances adhering to the side edge where the electrode is arranged on the supplied glass substrate, and then anisotropic conductive is applied to the side edge where the electrode is arranged. An ACF attaching process for attaching a film (ACF) is performed, and then a component is supplied to the electrode placement position and temporarily bonded, and then a process of applying pressure and heat higher than the temporary bonding and performing a final bonding is performed.

  As a substrate cleaning apparatus for cleaning the surface deposits on the side edge of the substrate, a tape-shaped cleaning cloth is supplied to the surface of the pressing element facing the substrate surface, and the cleaning cloth feed direction is better than the facing surface of the pressing element. On the side, a cleaning agent made of ethanol or other organic solvent is discharged from the discharge head toward the cleaning cloth, and the pressing cloth is pressed against the side edge of the substrate with the pressing cloth. A substrate in which the substrate is relatively moved to clean the surface of the side edge portion of the substrate is known (see, for example, Patent Document 1).

  In addition, the first and second cleaning units and the first and second substrate holding units that perform different cleanings are arranged in parallel in a single apparatus, and the substrate is held by each substrate holding unit. In other words, the substrate is passed through each cleaning unit, the substrate is cleaned by each, and the substrate is transferred to each substrate holding unit by a substrate transfer means (see, for example, Patent Document 2). . As the contents of cleaning, for example, the first cleaning unit performs ultrasonic air blow cleaning and atmospheric pressure plasma cleaning, and the second cleaning unit performs wiping cleaning and ultrasonic air blow cleaning. Yes.

In addition, the substrate is immersed in a cleaning tank in which ozone water heated by an ozone water heating unit and having increased active oxygen concentration and increased oxidizing power is stored, thereby performing processing such as removal of organic substances. It is known (see, for example, Patent Document 3).
Japanese Patent No. 3503512 JP 2005-99595 A JP 2000-301085 A

  By the way, since there is a problem in that if a component is mounted as it is in a state where dust or a glass piece adheres to the substrate, there is a problem that a bonding failure occurs. Therefore, as described in Patent Document 1, a process immediately before component mounting is performed. The substrate surface is wiped and cleaned with a cleaning cloth containing a cleaning agent. In addition, when an organic solvent such as ethanol or IPA (isopropyl alcohol) is applied as a cleaning agent, not only dust and glass pieces but also oil can be effectively removed on the substrate. From the aspect of organic solvent management, cleaning without using an organic solvent is required. On the other hand, when water is applied instead of an organic solvent, the oil cannot be removed sufficiently, resulting in the occurrence of defective joining of parts. There is a problem of becoming. For example, Patent Document 3 discloses that the substrate is immersed and cleaned in ozone water heated to about 80 ° C. However, the substrate is immersed in a large cleaning tank to remove organic substances. Yes, it does not suggest application of ozone water to wiping and cleaning with a cleaning cloth. Also, since ozone water has the property of dissolving the cleaning cloth itself when the concentration is high, and ozone gas may have an adverse effect on the operator even at low concentrations, the cleaning cloth should be impregnated with ozone water and cleaned. Is not considered.

  In addition, an oxide film or nickel may be deposited on the electrode provided on the substrate, and even in this case, there is a problem in that joining the components as it is may cause a bonding failure. Foreign substances such as an oxide film on the substrate electrode can be removed by irradiation with atmospheric pressure plasma. Therefore, as described in Patent Document 2, for example, after cleaning by irradiating atmospheric pressure plasma in the first cleaning unit, it is transported to the second cleaning unit and wiped and cleaned in the second cleaning unit. Thus, the occurrence of bonding failure can be suppressed.

  However, the conventional arrangement of the cleaning means using atmospheric pressure plasma composed of relatively large parallel plate electrodes and the wiping cleaning means using an organic solvent are arranged in parallel at a short distance, particularly when cleaning a small substrate or the like. Therefore, as shown in Patent Document 2, the first and second substrate holding units are provided, and the atmospheric pressure plasma cleaning unit is set to the second substrate holding corresponding to the first substrate holding unit. It is necessary to adopt a configuration in which a cleaning unit corresponding to each of the plurality of substrate holding units is provided, such as a wiping cleaning unit corresponding to each part, the equipment becomes larger, and an atmospheric pressure plasma cleaning device and a wiping cleaning device are installed. Since a plurality of apparatuses and a transfer apparatus between them are required for the cleaning process by providing them separately and transferring the substrate between them by a transfer means, there is a problem that the equipment cost becomes high.

In view of the above-described conventional problems, the present invention is capable of reliably removing and cleaning different kinds of foreign matters, oils, and the like attached or deposited on the surface to be cleaned of the substrate during one relative movement process of the substrate. and to provide a cleaning equipment.

The substrate cleaning apparatus of the present invention is arranged in parallel with a plasma cleaning means for blowing atmospheric pressure plasma toward the surface to be cleaned of the substrate, and the plasma cleaning means, and the surface to be cleaned of the substrate is cleaned with a tape-shaped cleaning cloth. Wiping and cleaning means for wiping and cleaning; and moving means for relatively moving the surface to be cleaned of the substrate in the parallel direction of the plasma cleaning means and the wiping and cleaning means. The plasma cleaning means is inductively coupled with the first inert gas. An inductively coupled plasma generator that blows out a primary plasma composed of a plasma, and a secondary plasma composed of a mixed gas obtained by causing the primary plasma to collide with a mixed gas region of a second inert gas and a reactive gas. and a plasma expansion unit, wipe cleaning means all SANYO having means for impregnating the ozone water in the cleaning cloth, also wipe cleaning means, pressing it is to be cleaned surface of the substrate A pressing cloth, a cleaning cloth feeding means for intermittently sending the cleaning cloth to the surface of the pressing element facing the surface to be cleaned, and an ozone water supply means for discharging ozone water to the cleaning cloth. The pressing member is disposed so as to sandwich the side edge portion of the substrate having the surface to be cleaned from both sides, and the moving means relatively moves the pressing member along the side edge portion of the substrate .

  According to this configuration, it is possible to effectively remove the oxide film generated on the electrode and the deposited nickel by blowing atmospheric pressure plasma, and to clean the object by wiping and cleaning the cleaning cloth with ozone water. Not only dust and glass pieces on the surface, even if oil is attached, it can be reliably removed by the action of ozone water. In particular, in the plasma cleaning means, the primary plasma composed of inductively coupled plasma having a high plasma density collides with the mixed gas region of the second inert gas and the reactive gas, so that the second inert gas is avalanche phenomenon. The target gas (diffusion in the shape of a ball) is converted to plasma and diffused to spread over the entire mixed gas region, and the reactive gas is turned into plasma by the radicals of the second inert gas that has been converted to plasma, resulting in high plasma density. Secondary plasma having a low plasma temperature is generated, and the secondary plasma is blown out to perform plasma treatment, so that the substrate can be reliably cleaned while being moved without causing thermal damage to the surface to be cleaned. Therefore, different types of foreign matter and oil adhering or depositing on the surface to be cleaned of the substrate can be reliably removed and cleaned during a single movement process of the substrate, and cleaning is performed efficiently with a simple apparatus configuration. can do.

  Further, the wiping and cleaning means includes a pressing element pressed against the surface to be cleaned of the substrate, a cleaning cloth feeding means for intermittently sending the cleaning cloth to the surface of the pressing element facing the surface to be cleaned, and ozone water in the cleaning cloth. When the cleaning cloth containing ozone water is pressed against the surface to be cleaned on the opposite surface of the pressing element, the substrate and the pressing element are moved relative to each other. Thus, the surface to be cleaned of the substrate can be reliably wiped and cleaned with the cleaning cloth.

  In addition, a pair or a plurality of pairs of pressing elements are arranged so as to sandwich the side edge portion of the substrate having the surface to be cleaned from both sides, and the moving means relatively moves the pressing elements along the side edge portion of the substrate. In this case, the surface to be cleaned on both the front and back sides of the side edge of the substrate can be cleaned at the same time, and it is not necessary to support the side edge of the substrate from the back side. Can be.

According to the substrate cleaning equipment of the present invention, a plasma cleaning blowing secondary plasma in atmospheric pressure plasma, and a cleaning wipe with ozone water tape-shaped cleaning cloth impregnated, to be cleaned surface of the substrate relatively By moving in parallel at positions spaced in the moving direction while moving, it is possible to reliably remove different types of foreign matter and oil adhering or depositing on the surface to be cleaned of the substrate during a single moving process of the substrate. Can be cleaned efficiently, and can be cleaned efficiently with a simple apparatus configuration.

  Hereinafter, with reference to FIGS. 1 to 9, each embodiment in which the present invention is applied to a substrate cleaning apparatus that cleans a surface to be cleaned of a side edge portion of a glass substrate of a liquid crystal display panel and removes adhered foreign matters will be described with reference to FIGS. explain.

(First embodiment)
First, a substrate cleaning apparatus according to a first embodiment of the present invention will be described with reference to FIGS.

  1 to 4, the substrate cleaning apparatus according to the present embodiment includes a substrate transfer means 2 that carries a substrate 1 such as a glass substrate into the substrate cleaning apparatus, and a movement that accompanies the cleaning operation after receiving the substrate 1 from the substrate transfer means 2. Moving means 3 for performing cleaning, wiping / cleaning means 4 for wiping and cleaning the surfaces to be cleaned on the front and back surfaces of the side edges of the substrate 1, and plasma for performing plasma cleaning by blowing atmospheric pressure plasma to the surface to be cleaned of the substrate 1 The cleaning means 5 is provided on the base 20. The unloading of the substrate 1 is performed by a substrate transfer means (not shown) similar to the substrate transfer means 2 provided in an ACF sticking apparatus (not shown) as a subsequent process.

  The substrate transport means 2 reciprocally moves the substrate platform 6 having a pair of support arms 6a, 6a for placing and supporting the substrate 1 in both directions, and the substrate platform 6 in the X direction which is the substrate transport direction. The drive mechanism 7 is used. The drive mechanism 7 includes a support rail portion 7a that movably supports the substrate platform 6, and a feed screw mechanism 7b that is driven by a motor 7c to move the substrate platform 6.

  The moving means 3 includes a substrate holding portion 8 for placing and supporting the central portion of the substrate 1, a substrate holding portion 8 in the X direction, a Y direction perpendicular thereto, a vertical Z direction, and a θ direction around the Z axis. It is comprised by the movement table 9 which performs a movement and positioning. The moving unit 3 holds the substrate 1 on the substrate holding unit 8, and a wiping cleaning unit 10 described later in the plasma cleaning unit 5 and the wiping cleaning unit 4 is provided on the surface of the side edge of the substrate 1 and on both the front and back surfaces. The substrate 1 is moved so as to relatively move from one end to the other end of the surface to be cleaned. The relative movement speed is set to about 40 to 250 mm / s, preferably about 100 to 250 mm / s.

  Next, the wiping / cleaning means 4 will be described. As shown in FIGS. 2 and 4, the wiping / cleaning unit 10 includes a pair of pressing elements 11 a and 11 b arranged so as to face the upper and lower sides of the side edge of the substrate 1 held by the substrate holding unit 8. I have. The pressers 11a and 11b are preferably made of a material such as polyacetal (POM) that is excellent in chemical resistance and slidable. Both pressing elements 11a and 11b are opened / closed by a chuck mechanism (not shown), and a tape-like cleaning cloth is applied to the surfaces to be cleaned on both upper and lower sides of the side edge of the substrate 1 by these pressing elements 11a and 11b. 12 is pressed. The chucking force of both pressing elements 11a and 11b is preferably about 4 to 9N. Note that the pressers 11a and 11b and the chuck mechanism (not shown) are elastically supported in the vertical direction so as to absorb the positional deviation from the height position of the substrate 1.

  As shown in FIG. 1, the cleaning cloth 12 is provided correspondingly to the pressing elements 11 a and 11 b, respectively, and the pressing elements 11 a and 13 b as appropriate from the supply reels 13 a and 13 b serving as cleaning cloth feeding means via the guide rollers 14. It is supplied to the pressers 11a and 11b from a direction orthogonal to the relative movement direction of 11b. The supplied cleaning cloth 12 is guided to the opposing surface 15 through a guide portion 16 that is inclined on the upper side of the opposing surface 15 that opposes the surface to be cleaned of the substrate 1 in the pressing elements 11a and 11b. The cleaning cloth 12 after being cleaned by being brought into contact with the surface to be cleaned of the substrate 1 at the facing surface 15 is wound around the collection reels 17a and 17b through the guide roller 14 as appropriate. The tension applied to the cleaning cloth 12 is about 0.5 to 1.8N. The cleaning cloth 12 is pitch-fed for each cleaning operation by the supply reels 13a and 13b and the recovery reels 17a and 17b.

  A discharge port 18 is opened in the guide portion 16 of the pressing elements 11a and 11b so that low-concentration ozone water as a cleaning agent is discharged toward the cleaning cloth 12. Before the cleaning cloth 12 is pitch-fed, the ozone water is pumped by a predetermined amount from the ozone water supply means described later to the discharge port 18 through a flow path provided in the pressers 11a and 11b, and is supplied to the cleaning tape 12. It is discharged toward. A detection sensor 19 that detects a change in color tone that occurs when the cleaning cloth 12 is wetted with ozone water is disposed opposite to the guide portions 16 of the pressers 11a and 11b, and a required amount of ozone water is appropriately supplied to the cleaning cloth 12. It is comprised so that it can confirm that it discharged.

  On the opposing surface 15 of the pressing elements 11a and 11b, a protrusion 15a extending in a direction orthogonal to the relative movement direction of the pressing elements 11a and 11b is formed. The lengths of the facing surface 15 and the protrusion 15a are set larger than the width dimension of the surface to be cleaned of the substrate 1. The height h of the protrusion 15a is preferably about 3 to 5 times the thickness of the cleaning cloth 12, and in the specific example, the thickness of the cleaning cloth 12 is 0.2 to 0.3 mm. The height of 15a is preferably about 1 mm. In addition, on both sides of the opposing surface 15 of the pressing elements 11a and 11b, there are provided restricting protrusions 15b that restrict the positions of both side edges of the cleaning cloth 12 with a gap on both sides of the protrusion 15a. The height of the restricting protrusion 15b is set to be the same as the height of the protruded part 15a, and the top surfaces of the protruded part 15a and the restricting protruded part 15b are located on the same plane.

  Next, the plasma cleaning means 5 will be described with reference to FIGS. A coiled antenna 23 is disposed around a cylindrical reaction vessel 22 made of a dielectric material that forms a reaction space 21 having a circular cross section, and a high frequency voltage is applied to the antenna 23 from a high frequency power supply 24 to generate a high frequency in the reaction space 21. By applying an electric field, supplying the first inert gas 25 from the upper end 22a of the reaction vessel 22, and applying a high voltage with an ignition device (not shown) to ignite, from the lower end 22b of the reaction vessel 22, A primary plasma 26 made of high temperature inductively coupled plasma is blown out. This reaction vessel 22 constitutes an inductively coupled plasma generator.

  A rectangular mixed gas container 27 is disposed around the vicinity of the lower end 22b of the reaction container 22, and a plurality of gas supply ports 29 for supplying the mixed gas 28 to the inside are disposed at the upper part of the four peripheral walls. The mixed gas container 27 extends below the lower end 22 b of the reaction container 22, and the lower end open mixed gas in which the primary plasma 26 collides with a portion below the lower end 22 b of the reaction container 22 to generate the secondary plasma 31. Region 30 is formed. This mixed gas container 27 constitutes a plasma developing part.

  As the high frequency power supply 24 for supplying a high frequency voltage to the antenna 23, a VHF frequency band whose output frequency band is typified by 100 MHz is suitable, but a microwave frequency band or the like can also be used. Between the high frequency power supply 24 and the antenna 23, a matching unit (not shown) that suppresses a reflected wave generated by the antenna 23 is interposed. In addition, as the first and second inert gases, a single gas or a mixed gas selected from argon, neon, xenon, helium, and nitrogen is applied. As the reactive gas, oxygen gas suitable for electrode cleaning and surface modification is applied in the present embodiment.

  As shown in FIG. 5, the plasma cleaning means 5 and the wiping cleaning unit 10 are covered with cover bodies 32 and 34 as ozone recovery means and the internal gas in order to prevent the generated ozone gas from flowing out to the surroundings. Is sucked by the exhaust fans 33 and 35. The ozone gas sucked by the exhaust fans 33 and 35 collects a required amount of ozone gas by the ozone concentration adjusting unit 36, and the excess ozone gas is made harmless by the gas processing unit (not shown) by the exhaust fan 37. And released into the atmosphere. The recovered ozone gas is fed into an ozone water generation unit 38 to which dissolved water is supplied, and is subjected to ultrasonic vibration applied by the ultrasonic vibration applying means 39 in the ozone water generation unit 38 to be dissolved water. The ozone gas is effectively dissolved, and ozone water having a relatively low concentration and a predetermined concentration is generated. The ozone concentration of the generated ozone water is set to such a concentration that the cleaning cloth 12 does not dissolve and the oil (oil film) adhering to the substrate 1 can be effectively removed during normal wiping cleaning. In terms of numerical values, the above effect can be reliably obtained by setting it to 0.01 PPM or less. This concentration adjustment is performed by the ozone concentration adjusting unit 36. In the ozone water generation unit 38, a heater that applies thermal energy instead of or in combination with the ultrasonic vibration applying unit 39 may be applied.

  The generated ozone water is pressurized by supplying high-pressure air from the high-pressure air source 40 through the valve 41 into the ozone water generation unit 38 and the ozone water in the ozone water generation unit 38 is supplied through the valve 42 to the ozone water. While being supplied to the pressers 11a and 11b through the supply pipe 43, ozone water is discharged from the discharge port 18 toward the cleaning cloth 12 by a predetermined amount as required by opening / closing control of the valve 42. These high-pressure air source 40, valves 41 and 42, ozone water supply pipe 43 and discharge port 18 constitute ozone water supply means. With the above configuration, ozone gas generated in the plasma cleaning means 5 and the wiping cleaning unit 10 can be collected, ozone water can be generated and sent to the wiping cleaning unit 10, and ozone can be circulated and used. The ozone water generation unit 38 may generate ozone water continuously or intermittently using a batch method.

  Next, the process of cleaning the surface to be cleaned at the side edge of the substrate 1 with the substrate cleaning apparatus having such a configuration will be described with reference to FIGS. 1, 2, 4, and 6. First, the substrate 1 is carried into the substrate cleaning apparatus by the substrate transfer means 2. The loaded substrate 1 is received on the substrate holding unit 8 of the moving unit 3, and movement control is performed by the moving unit 3 so that the side edge of the substrate 1 sequentially passes through the plasma cleaning unit 5 and the wiping cleaning unit 10. Is done. Therefore, first, the moving means 3 is positioned so that one end of the side edge portion of the substrate 1 faces the plasma cleaning means 5. In parallel with this carry-in operation, ozone water is discharged from the discharge port 18 to the cleaning cloth 12 facing the guide portion 16 so that the cleaning cloth 12 is impregnated with a required amount of ozone water. The detection sensor 19 detects that the cleaning cloth 12 sufficiently contains ozone water.

  Next, the moving surface 3 moves the side edge of the substrate 1 as described above, so that the surface to be cleaned of the substrate 1 passes under the plasma cleaning device 5 and is irradiated with atmospheric pressure plasma to be atmospheric pressure. Plasma cleaning is performed. When the movement of the side edge portion of the substrate 1 is started, a predetermined amount of the cleaning cloth 12 is fed by the wiping cleaning unit 10, and the opposing surface 15 of the pressers 11 a and 11 b and the surface to be cleaned of the substrate 1 are moved. A part containing the cleaning agent is fed in between.

  In the atmospheric pressure plasma cleaning by the plasma cleaning means 5, the mixed gas 28 is supplied into the mixed gas container 27 while the primary plasma 26 made of inductively coupled plasma is blown out from the lower end 22 b of the reaction container 22. In the mixed gas region 30, the primary plasma 26 collides with the mixed gas 28 to generate a secondary plasma 31, and the secondary plasma 31 develops in the entire region of the mixed gas region 30 and further from the mixed gas region 30 downward. To blow out. The secondary plasma 31 has a plasma temperature lower than that of the primary plasma 26 (about 250 ° C.) (about 80 ° C.) and a conventional capacitively coupled plasma composed of parallel plate electrodes having a low plasma density. The plasma density is as high as several tens to several hundreds. By irradiating the surface to be cleaned of the substrate 1 with the secondary plasma 31, a desired plasma treatment can be performed efficiently in a short time. In the parallel-plate electrode method that is a capacitive coupling type, plasma is generated between the electrodes. However, in order to improve the relative plasma density for processing, if the electrode is too close to the substrate to be processed, a discharge is generated with respect to the substrate, but the secondary plasma 31 of the present invention is not very close. , The distance to the substrate can be reduced to about 2 mm, and a high plasma density can be imparted to the substrate. As described above, appropriate plasma processing can be reliably performed even when the substrate 1 is moved at about 100 to 150 mm / sec. The temperature of the substrate cleaning surface at this time is about 40 ° C. The primary plasma 26 having a role of a plasma ignition function for the high-density secondary plasma 31 diffused by the collision of the primary plasma 26 is a conventional inductively coupled plasma (thermal plasma) system in which the substrate is directly irradiated with the primary plasma. Compared to igniting a small amount of inert gas, the output is as low as about 50 W and the calorific value is as low as 250 ° C., which is about 1/50, and the coil can be air-cooled. In addition, since the secondary plasma 31 expands greatly in this way, plasma processing in a large area compared to the cross-sectional area of the reaction vessel 22 can be performed efficiently and reliably in a short time, and the mixed gas 28 Irradiation / stop control of the secondary plasma 31 can be performed with good responsiveness by supply / stop control, and plasma processing can be performed only at necessary locations while the substrate 1 is moving. Is possible. As described above, a compact high-pressure plasma cleaning can be configured with a high-density plasma having a low output power ratio with a low output.

  Next, when one end of the side edge portion of the substrate 1 is positioned between the pair of pressing elements 11 a and 11 b in the wiping cleaning unit 10 as the substrate 1 is moved by the moving unit 3, the chuck mechanism of the wiping cleaning unit 10 (Not shown), the gap between the pair of pressing elements 11a and 11b is closed, and the cleaning cloth 12 is brought into contact with the surface to be cleaned of the substrate 1 by the protrusion 15a formed on the opposing surface 15 of the pressing elements 11a and 11b. It will be in contact. In this way, the substrate 1 continues to move while the cleaning cloth 12 is in contact with the surface to be cleaned of the substrate 1 at the protrusions 15a of the pressing members 11a and 11b, and the pressing members 11a and 11b are moved to the substrate 1 side. The surface to be cleaned of the substrate 1 is cleaned by moving relative to the other end of the surface to be cleaned along the edge. This cleaning operation is performed only by movement in one direction or by one or more reciprocating movements.

  Thereafter, a pair of pressing elements 11a and 11b are opened by a chuck mechanism (not shown), the substrate 1 is separated from the plasma cleaning means 5 and the wiping cleaning unit 10 by the moving means 3, and the ACF sticking device of the subsequent process is separated. It is delivered to a substrate transfer device (not shown) and carried out. And the next board | substrate 1 is carried in in the board | substrate conveyance means 2, and the above washing | cleaning process is repeated.

  According to the present embodiment described above, the plasma cleaning means 5 sprays atmospheric pressure plasma (secondary plasma 31) onto the surface to be cleaned of the substrate 1, so that an oxide film generated on the electrode on the surface to be cleaned and deposited. Nickel can be effectively removed and wiped and washed with a cleaning cloth 12 impregnated with low-concentration ozone water in the wiping and cleaning unit 10, so that the surface to be cleaned is not limited to dust and glass pieces but has oil content. Even if it adheres, it can be reliably removed by the action of ozone water. Further, since ozone water is applied to the wiping / cleaning unit 10, there is no possibility of causing a problem in safety even if the plasma cleaning means 5 are arranged close to each other in parallel. Therefore, in a simple apparatus configuration in which the wiping cleaning means 4 and the plasma cleaning means 5 are arranged in parallel in a single apparatus, the substrate 1 is deposited or deposited on the surface to be cleaned during the single movement process of the substrate 1. All kinds of foreign matters can be surely removed, and the substrate 1 can be cleaned efficiently.

  In the plasma cleaning means 5, a reactive gas containing oxygen gas is applied, and the ozone gas generated in the plasma cleaning means 5 and the ozone gas generated in the wiping cleaning means 4 to which ozone water is applied are recovered, and this recovery is performed. Since ozone water is generated by the ozone generation unit 38 using the ozone gas and supplied to the wiping / cleaning means 4, the surface of the substrate 1 to be cleaned is treated with oxygen plasma so that the surface has high wettability. The ozone water generated by the wiping cleaning means 4 can be generated using the ozone gas generated by the plasma treatment, and the ozone gas generated from the ozone water of the wiping cleaning means 4 can also be secured. By using it, it is possible to effectively use ozone gas generated from plasma treatment or ozone water. Note that ozone water generated by the plasma cleaning means 5 is not collected to generate ozone water, but ozone water produced by a separately provided ozone water production apparatus is supplied to the wiping cleaning section 10 of the wiping cleaning means 4. You may make it supply.

  In the above description, the plasma cleaning means 5 is disposed on the upper side in the moving direction of the substrate 1 and the wiping cleaning means 4 is disposed on the lower side, as shown in FIG. Although an example in which wiping and cleaning is performed after cleaning is shown, wiping and cleaning means 4 is disposed on the upper side in the moving direction of the substrate 1 and plasma cleaning means 5 is disposed on the lower side. As shown in FIG. 7, after performing wiping and cleaning, cleaning with atmospheric pressure plasma may be performed. If it carries out like this, the to-be-cleaned surface wet in the wiping washing | cleaning process can be dried with the heat of a plasma washing | cleaning process, and the next process can be implemented rapidly.

(Second Embodiment)
Next, a substrate cleaning apparatus according to a second embodiment of the present invention will be described with reference to FIGS. In addition, about the component substantially the same as what was demonstrated in 1st Embodiment, the same referential mark is attached | subjected and description is abbreviate | omitted, and only a different point is mainly demonstrated.

  In the wiping / cleaning unit 10 of the wiping / cleaning means 4 of the first embodiment, the wiping / cleaning unit 50 is illustrated as having a pair of pressers 11a and 11b. As shown in FIG. 9, the cleaning cloth 12 is disposed so as to be capable of being fed and moved along the longitudinal direction of the surface to be cleaned at one end of the substrate 1, that is, the relative movement direction of the substrate 1, and is spaced apart in the longitudinal direction. The first pressing position P1 and the second pressing position P2 are provided with pressing rollers 51a and 51b as pressing elements and pressing rollers 52a and 52b, respectively, and cleaning is performed at the first pressing position P1. Ozone water is dropped onto the cloth 12 to perform wet cleaning, and moisture is wiped off with the cleaning cloth 12 in a dry state at the second pressing position P2.

  8 and 9, the cleaning cloth 12 drawn from the supply reel 53a is sent to the pressing roller 52a through the guide roller 54a, and then sent to the pressing roller 51a through the guide roller 55a, and then the guide roller. It is wound around the collection reel 57a through 56a. Similarly, the cleaning cloth 12 drawn out from the supply reel 53b is sent to the pressing roller 52b through the guide roller 54b, then sent to the pressing roller 51b through the guide roller 55b, and then through the guide roller 56b. It is wound around the collection reel 57b.

  In this embodiment, the wiping cleaning means 4 and the plasma cleaning means 5 are configured to move in the direction of arrow D along the longitudinal direction of the surface to be cleaned at one end of the substrate 1 by the moving device 58. ing. A recognition camera 59 recognizes the degree of removal of dirt on the surface to be cleaned. Reference numeral 60 denotes a control unit that comprehensively controls the operation of the substrate cleaning apparatus.

  Also in the present embodiment, a simple apparatus configuration in which the wiping cleaning means 4 and the plasma cleaning means 5 are arranged in parallel in a single apparatus on the surface to be cleaned of the substrate 1 during a single moving process of the substrate 1. Different kinds of foreign matters, oils, and the like that have adhered or deposited can be reliably removed, and the substrate 1 can be cleaned efficiently.

According to the substrate cleaning equipment of the present invention, it is possible to reliably remove the different foreign substances or oil or the like of the type adhering or precipitated in the relative moving step of once the substrate onto the cleaned surface of the substrate, and a compact Since the substrate can be efficiently cleaned with a simple apparatus configuration, it can be suitably used for a component mounting apparatus for mounting various components on various substrates.

The perspective view which shows the whole schematic structure of 1st Embodiment of the board | substrate cleaning apparatus of this invention. The perspective view which shows the principal part structure of the embodiment. The perspective view of the plasma cleaning means of the embodiment. The longitudinal cross-sectional front view which shows the principal part structure of the embodiment. The block diagram which shows the ozone water production | generation structure in the embodiment. The flowchart of the board | substrate cleaning operation | movement in the embodiment. The flowchart of the other board | substrate cleaning operation | movement in the same embodiment. The perspective view which shows the whole schematic structure of 1st Embodiment of the board | substrate cleaning apparatus of this invention. The block diagram which shows the principal part structure in the embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 3 Moving means 4 Wipe cleaning means 5 Plasma cleaning means 10 Wipe cleaning part 11a, 11b Press 12 Cleaning cloth 13a, 13b Supply reel (cleaning cloth feeding means)
18 Discharge port (Ozone water supply means)
22 Reaction vessel (inductively coupled plasma generator)
25 1st inert gas 26 Primary plasma 27 Mixed gas container (plasma expansion part)
28 Mixed gas 30 Mixed gas region 31 Secondary plasma 32, 34 Cover body (ozone recovery means)
36 Ozone concentration adjusting unit 38 Ozone water generating unit 39 Ultrasonic vibration applying means 40 High pressure air source (ozone water supplying means)
43 Ozone water supply pipe (Ozone water supply means)
50 Wiping cleaning part 51a, 51b Press roller (pressor)
52a, 52b Pressing roller (pressing element)
53a, 53b Supply reel (cleaning cloth feeding means)

Claims (1)

A plasma cleaning means for blowing out atmospheric pressure plasma toward the surface to be cleaned; a wiping cleaning means disposed in parallel with the plasma cleaning means for wiping and cleaning the surface to be cleaned with a tape-shaped cleaning cloth; And a moving means for relatively moving the surface to be cleaned of the substrate in the parallel direction of the plasma cleaning means and the wiping cleaning means, and the plasma cleaning means blows out primary plasma composed of inductively coupled plasma of the first inert gas. An inductively coupled plasma generating section; and a plasma expanding section for generating a secondary plasma composed of a mixed gas obtained by causing the primary plasma to collide with the mixed gas region of the second inert gas and the reactive gas, The wiping cleaning means has means for impregnating the cleaning cloth with ozone water ,
Further, the wiping and cleaning means includes a pressing element pressed against the surface to be cleaned of the substrate, a cleaning cloth feeding means for intermittently sending the cleaning cloth to the surface of the pressing element facing the surface to be cleaned, and ozone water to the cleaning cloth. An ozone water supply means for discharging,
A pair or a plurality of pairs of pressing elements are arranged so as to sandwich the side edge portion of the substrate having the surface to be cleaned from both sides, and the moving means moves the pressing elements relative to each other along the side edge portion of the substrate. A substrate cleaning apparatus.

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