JP2003142451A - Semiconductor wafer-drying apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor wafer-drying apparatus that can efficiently dry a semiconductor wafer reduce residual particles and its costs. SOLUTION: In the wafer-drying apparatus, a wafer 100 is heated by a heating lamp 4 or the like for preventing adhering water from freezing when pressure inside a chamber 1 is reduced for evaporating the adhering water in the wafer 100, thus efficiently drying the wafer, and reducing residual particles and its costs.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer drying device and a semiconductor wafer cleaning / drying device.

[0002]

2. Description of the Related Art In recent years, with the high integration of semiconductor devices, the influence of particles adhering to the surface of a wafer on the reliability and yield of products cannot be ignored. Therefore, in the wafer manufacturing process, it is important that no particles remain on the wafer surface when the wafer after the cleaning process is dried.

As a conventional drying method, (1) a spin dryer method in which a wafer after cleaning is accommodated in a predetermined carrier and rotated at a high speed to scatter water on the surface of the wafer to dry it 2) IPA vapor drying method in which the wafer after cleaning treatment is immersed in isopropyl alcohol (IPA) vapor, and the water on the wafer surface is taken into IPA by elevating at a low speed and volatilizing them to dry them; (3) Pure After the washing with water is finished, the pure water is drained, and at the same time, the IPA vapor is put into the tank, and the water on the wafer surface is taken into the IPA and volatilized to dry it. is there.

[0004]

However, the above-mentioned conventional drying methods are insufficient, and improvements thereof are desired.

That is, in the spin dryer method, since it is necessary to supply a large amount of dry nitrogen or dry air into the drying chamber when the wafer is rotated at a high speed, the consumption of these supply gases becomes enormous. In addition, since the wafer comes into contact with the air in the drying chamber during the high-speed rotation process, it is necessary to prevent the adhesion of fine particles contained in the air.

In addition, the IPA vapor drying method and the Maragoni method consume the IPA because the IPA is a consumable item, and in addition, the IPA vapor drying method requires electric power to keep the IPA liquid temperature at a high temperature. There is a cost disadvantage. In addition, all the drying devices adopting the IPA vapor drying method are installed separately from the cleaning device,
When the wafer is transferred from the cleaning device to the drying device, particles may be attached. Furthermore, since IPA is used, separate equipment for fire countermeasures, recycling, and safety treatment is also required, which requires a large-scale device and a large amount of cost.

The present invention has been made in view of the above problems of the prior art, and is capable of efficiently and surely drying a semiconductor wafer after a cleaning process and sufficiently reducing residual particles, An object of the present invention is to provide a semiconductor wafer drying apparatus and a semiconductor wafer cleaning / drying apparatus that can achieve sufficient cost reduction in terms of equipment cost and operation cost.

[0008]

In order to solve the above-mentioned problems, a first semiconductor wafer drying apparatus of the present invention is an apparatus for drying a semiconductor wafer to which water adheres, and includes a processing chamber and a chamber. It is characterized in that it is provided with a supporting means for supporting the wafer, a decompressing means for decompressing the inside of the chamber, and a heating means for heating the wafer to a predetermined temperature in order to prevent freezing of water adhering to the wafer.

In the first semiconductor wafer drying apparatus of the present invention, the decompression means decompresses the inside of the chamber, thereby promoting the evaporation of water adhering to the wafer (hereinafter referred to as "adhered water"). At this time, the attached water is cooled by the heat of vaporization of the water that evaporates, but by heating the attached water on the wafer surface to a predetermined temperature by the heating means, the freezing of the attached water due to such cooling can be sufficiently prevented. Therefore, the drying apparatus can efficiently remove the adhered water from the wafer surface together with the residual particles, and realize a high-level drying process which is difficult to achieve by the conventional drying apparatus.

Further, in the first semiconductor wafer drying apparatus of the present invention, the heating means may heat the wafer surface to 40 to 60 ° C. As a result, it is possible to reliably prevent freezing when the adhered water evaporates, while sufficiently suppressing damage to the wafer due to heating.

A second semiconductor wafer drying apparatus of the present invention is an apparatus for drying a semiconductor wafer to which water is attached, which is a processing chamber which transmits infrared rays, and a supporting means which supports the wafer in the chamber. Decompression means for decompressing the inside of the chamber, and arranged at a predetermined position outside the chamber,
Infrared irradiation means for irradiating the wafer with infrared rays is provided. In the drying device, when the pressure in the chamber is reduced to evaporate the water adhered to the wafer, the wafer surface and / or the water adhered is heated to a predetermined temperature by irradiating the wafer with infrared rays from the infrared irradiation means. Since the adhered water is prevented from freezing, the adhered water can be removed from the wafer surface together with the residual particles, and the wafer can be dried efficiently and surely.

In the second semiconductor wafer drying apparatus of the present invention, the supporting means can support a plurality of wafers in parallel with each other, and the supporting means and the infrared irradiating means are the infrared irradiating means. It may be characterized in that the emitted infrared rays are arranged so as to enter the surface of the wafer at a predetermined angle. As a result, infrared rays are repeatedly incident and reflected between the opposing wafer surfaces, so that even if the distance between adjacent wafers is relatively short, the surfaces of multiple wafers can be heated in a short time without leakage. The efficiency and accuracy in drying the wafer and removing the residual particles are further enhanced.

Further, a third semiconductor wafer drying apparatus of the present invention is an apparatus for drying a semiconductor wafer to which water is attached, which is a processing chamber having an electrically insulating property, a decompression means for decompressing the inside of the chamber, and a chamber. At least one pair of electrostatic electrodes facing each other through a power source, and a power source for applying a voltage to the electrodes,
Supporting means for supporting the wafer so that the wafer is arranged between the electrodes in the chamber. In the drying device, when the pressure inside the chamber is reduced to evaporate the water attached to the wafer, a voltage is applied to the electrostatic electrode to generate an electric field in the chamber, and the electric field vibrates water molecules to generate heat. As a result, the attached water is heated to prevent freezing. Therefore, the adhered water can be removed from the wafer surface together with the residual particles, and the wafer can be dried efficiently and surely.

In the third semiconductor wafer drying apparatus of the present invention, the supporting means is capable of supporting a plurality of wafers in parallel with each other, and the supporting means and the electrodes are provided with an electric field generated by the electrodes. It may be characterized in that the orientation is arranged along the surface of the wafer. This allows
Water molecules attached to the surface of each wafer are
That is, since the wafer vibrates along the surface of the wafer, the degree of freedom of vibration of water molecules is increased, and the heat generation efficiency is improved. Therefore,
The surfaces of a plurality of wafers can be heated in a short time without leakage, and the efficiency and accuracy in drying the wafers and removing residual particles can be further improved.

A fourth semiconductor wafer drying apparatus of the present invention is an apparatus for drying a semiconductor wafer to which water is attached, which is a processing chamber having an electrically insulating property, a decompression means for decompressing the inside of the chamber, and a chamber. An induction coil wound at a predetermined external position; a power supply for applying a voltage to the induction coil; and a supporting means for supporting the wafer in the chamber so that the wafer is placed in the induction coil. Characterize. In the drying device, when the pressure inside the chamber is reduced to evaporate the water attached to the wafer, a voltage is applied to the induction coil to generate an electric field in the chamber, and the electric field vibrates the water molecules attached to the wafer surface. By making it generate heat, the attached water is heated to prevent freezing. Therefore, the adhered water can be removed from the wafer surface together with the residual particles, and the wafer can be dried efficiently and surely.

Further, in the fourth semiconductor wafer drying apparatus of the present invention, the supporting means is capable of supporting a plurality of wafers in parallel with each other, and the supporting means and the induction coil are:
The electric field generated by the induction coil may be arranged along the surface of the wafer.
As a result, the water molecules attached to the surface of each wafer vibrate in the direction of the electric field (along the wafer surface), so that the degree of freedom of vibration of the water molecules is increased and the heat generation efficiency is improved. Therefore, the surfaces of a plurality of wafers can be heated in a short time without leakage, and the efficiency and accuracy in drying the wafers and removing the residual particles can be further improved.

A fifth semiconductor wafer drying apparatus of the present invention is an apparatus for drying a semiconductor wafer to which water has adhered, which comprises a processing chamber, a supporting means for supporting the wafer in the chamber, and a reduced pressure inside the chamber. And a gas supply means for supplying dry air or dry nitrogen heated to a predetermined temperature into the chamber. In the drying apparatus, when the pressure inside the chamber is reduced to evaporate the water attached to the wafer, the attached water is heated by supplying dry air or dry nitrogen heated to a predetermined temperature into the chamber. Because freezing is prevented
The attached water can be removed from the wafer surface together with the residual particles, and the wafer can be dried efficiently and surely.

Further, in the fifth semiconductor wafer drying apparatus of the present invention, the supporting means can support a plurality of wafers in parallel with each other, and the supporting means and the gas supply means are different from each other. It may be characterized in that the supplied dry air or dry nitrogen is arranged so as to pass between adjacent wafers. As a result, the contact efficiency between the water adhering to the surface of the wafer and the dry air or dry nitrogen is improved, so that the surfaces of a plurality of wafers can be heated in a short time without leakage, and the wafer is dried and residual particles are removed. The efficiency and accuracy in

Further, the semiconductor wafer cleaning / drying apparatus of the present invention includes any one of the above-mentioned first to fifth semiconductor wafer drying apparatuses, a chemical solution supplying means for supplying a predetermined chemical solution into the chamber, and a pure solution inside the chamber. And pure water supply means for supplying water. This eliminates the need to transfer the wafer from the cleaning device to the drying device, which causes particles to adhere to the wafer, so that residual particles can be further reduced and the cleaning / drying process can be sufficiently efficient. It is possible to improve.

Further, neither the semiconductor wafer drying apparatus nor the semiconductor wafer cleaning / drying apparatus of the present invention requires an expensive reagent such as IPA, and the facility cost and the operating cost are relatively low, so that sufficient cost reduction can be achieved. Can be achieved.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will now be described in detail with reference to the drawings. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.

FIG. 1 is a schematic configuration diagram showing a first embodiment of a semiconductor wafer cleaning / drying apparatus of the present invention. In the apparatus shown in FIG. 1, the processing chamber 1 made of quartz plays a role of both a processing tank in a cleaning process and a processing tank in a drying process, as described later. A lid (cover) 2 that can be opened and closed is provided on the upper portion of the chamber 1, and the semiconductor wafer 100 supported by a support member (boat) 3 can be accommodated from the upper portion of the chamber 1. Also, cover 2
The inside of the chamber 1 which is closed is kept in a sealed state.

The boat 3 is made of quartz in which a plurality of grooves are formed in parallel. By supporting the wafer 100 in the grooves, a plurality of boats 3 are formed so that the surfaces of adjacent wafers face each other, as shown in FIG. 100 wafers (eg 25)
Can be arranged in parallel with each other.

At a predetermined position outside the chamber 1,
A plurality of heating lamps 4 that emit infrared rays are arranged. FIG. 3 is an explanatory view schematically showing a state when infrared rays are emitted from the heating lamp 4 toward the wafer 100.
In FIG. 3, infrared rays 10 emitted from the heating lamp 4
Is transmitted through the quartz chamber 1 to irradiate the wafer 100. Here, by arranging the wafer 100 (that is, the boat 3) and the heating lamp 4 so that the infrared rays 10 are incident on the surface of the wafer 100 at a predetermined angle, the infrared rays 10 are provided between the opposing surfaces of the wafer 100. Since the reflection and reflection are repeated, a plurality of wafers 100 can be heated in a short time without leakage even when the distance between adjacent wafers is relatively short.

Further, a line L1 is provided below the chamber 1.
Are connected. The line L1 branches into a supply line L2 and a discharge line at a predetermined position, an ultrapure water supply device is provided at the other end of the line L2, and a dry pump 5 is provided at a predetermined position of the line L3. Furthermore, the line L2,
L3 is branched at each predetermined position to store the chemical solution storage tank 6
It is connected to a-6c.

The chemical solution storage tanks 6a to 6c are provided with reagent measuring ampoules 7a to 7 via lines L4a to L4c, respectively.
It is connected to the ultrapure water measuring ampoules 7d to 7f through the line c and lines L4d to L4f. Thereby, the reagent or ultrapure water is injected from the lower part of the measuring ampoules 7a to 7f, dry nitrogen or the like is blown from the upper part of each measuring ampoule, the reagent and the ultrapure water are transferred to the chemical solution storage tank, and the chemical solution having a desired concentration is obtained. Is prepared. As such a chemical solution, hydrogen peroxide (H
₂ O ₂ ) aqueous solution, ammonium hydroxide (NH ₄ OH) aqueous solution, hydrochloric acid, hydrogen fluoride (HF) aqueous solution and the like.

When the wafer 100 is cleaned by using the apparatus shown in FIG. 1, for example, the chemical solution in the chemical solution storage tank is drawn out by the transfer pump 8a, the impurities are removed by the filter 9a, and then the line is removed. It is supplied into the chamber 1 through L2 and L1 and a chemical solution cleaning process is performed. This operation includes three-way valve V1 and open / close valves V3b, V3c,
It is performed with V4 closed and the open / close valve V2 opened.
Further, the chemical liquid after the chemical liquid cleaning process may be discharged from the discharge line L3, and may be returned to the chemical liquid storage tank 6a and reused if the degree of contamination is sufficiently low.

Next, with the valve V3a closed and the valve V4 opened, ultrapure water is supplied from the line L2 into the chamber 1 to perform an ultrapure water cleaning process. The waste water after the ultrapure water cleaning process is discharged from the line L3 or the line L6 connected to the upper part of the chamber 1. The wafer 100 wet by the cleaning process can be dried by the drying process described later.

That is, the three-way valve V1 is adjusted so that only the chamber 1 communicates with the dry pump 5, the valve V5 is opened, and the valves V2 and V6 to V9 are closed.
The inside of the chamber 1 is decompressed by the dry pump 5 while heating the wafer 100 by irradiating the wafer 100 with infrared rays.

At this time, the temperature of the heated surface of the wafer 100 is preferably 40 to 60 ° C. If the temperature is lower than 40 ° C, the drying efficiency tends to decrease, while if it exceeds 60 ° C, the wafer 100 may be damaged. In addition, the reduced pressure in the chamber 1 is not particularly limited as long as the evaporation of water can be promoted,
About 10 ^-2 Torr (about 1 Pa) is suitable.

Since the pressure inside the chamber 1 after the drying process is reduced, when the wafer 100 is taken out, the leak valve V8 above the chamber 1 is opened before the cover 2 is opened to return the inside of the chamber 1 to the normal pressure. Be done.

As described above, in the first embodiment, the chamber 1
When decompressing the inside to evaporate the water adhering to the wafer 100,
By irradiating the infrared rays from the heating lamp 4 toward the wafer 5 as described above, the surface of the wafer 100 is heated to a predetermined temperature and the freezing of the adhered water is prevented. The wafer 100 can be removed from the surface and the wafer 100 can be dried efficiently and surely.

The state change of the adhered water in the above drying process will be described in more detail with reference to FIG. FIG. 4 is a graph showing a state diagram of water, and a point a in the figure represents a state of attached water at room temperature and normal pressure. In the above drying process,
Although the evaporation of the adhered water is promoted as the pressure inside the chamber 1 decreases, if the pressure inside the chamber 1 is reduced without heating the wafer 100, the residual adhered water is likely to be cooled by the heat of evaporation and frozen. (Point c). If the attached water freezes in this way, not only the efficiency of the drying process decreases, but also the residual particles on the wafer surface cannot be sufficiently reduced.

On the other hand, in this embodiment, by depressurizing the inside of the chamber 1 while heating the wafer 100 as described above, the adhered water evaporates together with the residual particles without freezing, so that the wafer is dried and remains. The efficiency and accuracy in removing particles can be sufficiently improved.

Further, in the present embodiment, as described above, the wafer 100 is not required to be transferred when performing the cleaning process and the drying process, and the chamber 1 is processed through these processes.
Since it is hermetically sealed, the possibility of particles mixing from the outside of the chamber 1 is extremely low, and therefore the residual particles on the wafer 100 after the drying process can be sufficiently reduced.

Further, in the present embodiment, since the wafer 100 is heated by the infrared irradiation, even if the wiring is formed on the wafer 100, the drying process can be performed without damaging the wafer 100. You can

The present embodiment is not limited to this. For example, the apparatus shown in FIG. 1 performs a cleaning process and a drying process in one chamber 1. However, when the use environment is kept sufficiently clean and the mixture of particles can be sufficiently prevented. The chamber for cleaning processing and the chamber for drying processing may be separately provided.

Further, in order to keep the heating temperature within a predetermined range, the temperature in the chamber 1 (preferably the wafer 100) is maintained.
A temperature adjusting device for measuring the surface temperature) and controlling the output of the heating lamp 4 based on the measured value may be further provided.

Although the boat 3 can support a plurality of wafers, the wafers may be processed one by one in one cleaning or drying process. FIG. 5 is a schematic configuration diagram showing a second embodiment of the semiconductor wafer drying apparatus of the present invention. The apparatus shown in FIG. 5 is provided with a pair of electrostatic electrodes 20, and a high frequency electric field is applied to the electrodes 20 by a power source (not shown) to generate a high frequency electric field in the processing chamber 1 made of quartz. (For example, frequency: 400 kHz,
Output: several tens of W to several kW). The configurations of the boat 3, the dry pump 5, etc. are the same as those of the apparatus shown in FIG. 1 (the same applies to the third and fourth embodiments described later).

FIG. 6 is an explanatory view schematically showing a state when a voltage is applied to the electrostatic electrode 20 to generate a high frequency electric field in the chamber 1. Generally, the wafer 100 has a shielding property against electromagnetic waves, but as shown in FIG.
00 (that is, the boat 3) and the electrostatic electrode 20 are arranged so that the generated high-frequency electric field 21 is oriented along the surface of the wafer 100, so that water molecules on the surface of the wafer 100 are in the electric field direction (direction horizontal to the surface). ) To vibrate and generate heat,
The degree of freedom of vibration of water molecules is increased, heat generation efficiency is improved, and even if the distance between adjacent wafers is relatively short, a plurality of wafers 100 can be heated in a short time without leakage.

As described above, in the second embodiment, the electrostatic electrode 2
Although it differs from the first embodiment in which a heating lamp is used in that heating is performed by using 0, the surface of the wafer 100 has a predetermined surface when the pressure inside the chamber 1 is reduced by the dry pump 5 to evaporate the adhered water on the wafer 100. The first point is that it is possible to prevent the freezing of the attached water by being heated to the temperature of 100 ° C., remove the attached water together with the residual particles from the surface of the wafer 100, and efficiently and surely dry the wafer 100. It is similar to the embodiment.

Further, by arranging the wafer 100 and the electrostatic electrode 20 as described above and vibrating the water adhered to the wafer 100 along the electric field direction, for example, an electric field is applied to the wafer 1.
00 is more likely to be heated than when it is generated along the direction perpendicular to the surface, so that the efficiency and accuracy in the drying process can be improved.

FIG. 7 is a schematic configuration diagram showing a third embodiment of the semiconductor wafer drying apparatus of the present invention. The apparatus shown in FIG. 7 is provided with a high frequency induction coil 30 wound outside the chamber 1, and a high frequency voltage is applied to the induction coil 30 by a power source (not shown) so that the inside of the processing chamber 1 made of quartz. A high-frequency electric field can be generated (for example, frequency: 400 kHz, output: several tens W to several kW).

FIG. 8 is an explanatory view schematically showing a state when a high frequency voltage is applied to the dielectric coil 30 to generate a high frequency electric field 21 in the chamber 1. As shown in FIG. 8, by arranging the wafer 100 (that is, the boat 3) and the induction coil 30 so that the direction of the generated high frequency electric field 21 is along the surface of the wafer 100, the same as in the second embodiment. Since water molecules on the surface of the wafer 100 vibrate in the electric field direction (a direction horizontal to the surface) to generate heat, the degree of freedom of vibration of the water molecules is increased, heat generation efficiency is improved, and the distance between adjacent wafers is relatively large. Even if the length is short, a plurality of wafers 100 can be heated in a short time without leakage.

As described above, the third embodiment is different from the first and second embodiments in that the induction coil 30 is used for heating, but the inside of the chamber 1 is decompressed by the dry pump 5, and the wafer 100 is attached. When evaporating water, the wafer 10
The surface of No. 0 is heated to a predetermined temperature to prevent freezing of the attached water, remove the attached water from the surface of the wafer 100 together with the residual particles, and obtain an effect that the wafer 100 can be dried efficiently and surely. The same applies to the points.

Further, by arranging the wafer 100 and the induction coil 30 as described above and vibrating the water adhered to the wafer 100 along the direction of the electric field, the efficiency and accuracy in the drying process can be improved. This is similar to the second embodiment.

FIG. 9 is a schematic block diagram showing a fourth embodiment of the semiconductor wafer drying apparatus of the present invention. In the apparatus shown in FIG. 9, a dry nitrogen supply line L6 is connected to the upper part of the chamber 1, and a heater 40 is provided near the connection between the line L6 and the chamber 1. As a result, the dry nitrogen from the line L6 is heated to a predetermined temperature by the heater 40 and then introduced into the chamber 1 in a viscous flow state.

FIG. 10 is an explanatory view schematically showing a state in which the water adhering to the wafer 100 is heated by the heated dry nitrogen 41 in the chamber 1. As shown in FIG. 10, by arranging the wafers 100 (that is, the boats 3) along the flow direction of the dry nitrogen 41, even if the distance between adjacent wafers is relatively short, a plurality of wafers 100 can be arranged. The sheets can be heated in a short time without leakage. Further, by introducing the dry nitrogen into the chamber 1 in a viscous flow, it is possible to sufficiently suppress the temperature decrease of the dry nitrogen due to the reduced pressure. In the present embodiment, the wafer 100 may be heated by using dry air instead of dry nitrogen.

As described above, the fourth embodiment is different from the above embodiment in that the wafer 100 is heated by the heated dry nitrogen, but the chamber 1 is operated by the dry pump 5.
When decompressing the inside to evaporate the water adhering to the wafer 100,
The surface of the wafer 100 is heated to a predetermined temperature to prevent freezing of the adhered water, remove the adhered water from the surface of the wafer 100 together with residual particles, and obtain an effect that the wafer 100 can be dried efficiently and surely. The same applies to the points. Further, by arranging the wafer 100 along the flow direction of dry nitrogen, efficiency and accuracy in the drying process can be improved.

Further, in the present embodiment, since the wafer 100 is heated by the heated dry nitrogen, the wafer 100 is
Even if wiring is formed on the wafer 100,
The drying process can be performed without damaging the.

The above-mentioned drying devices according to the second to fourth embodiments may be used alone, respectively, and further provided with a chemical solution supplying means, a pure water supplying means and the like like the apparatus shown in FIG. It may be used as a washing and drying device.

[0052]

As described above, in the semiconductor wafer drying apparatus of the present invention, when the pressure inside the chamber is reduced to evaporate the adhered water on the wafer, the wafer surface and / or the adhered water is heated to a predetermined temperature. As a result, freezing of the adhered water due to the heat of evaporation is sufficiently prevented, so that the adhered water can be removed from the wafer surface together with the residual particles, and the wafer can be dried efficiently and surely.

Further, the semiconductor wafer cleaning / drying apparatus of the present invention comprises the above-mentioned semiconductor wafer drying apparatus of the present invention, a chemical solution supplying means for supplying a chemical solution to the drying apparatus, and a pure water supplying means for supplying pure water. In the case where the cleaning process and the drying process are performed, the wafer transfer process is not required and these processes can be performed in one processing chamber. Therefore, it is possible to sufficiently improve the efficiency of the cleaning / drying process and further enhance the effect of reducing the residual particles.

Further, neither the semiconductor wafer drying apparatus nor the semiconductor wafer cleaning / drying apparatus of the present invention requires an expensive reagent such as IPA, and the equipment cost and the operating cost are relatively low, so that sufficient cost reduction can be achieved. Can be achieved.

[Brief description of drawings]

FIG. 1 is a first view of a semiconductor wafer cleaning / drying apparatus according to the present invention.
It is a schematic structure figure showing an embodiment.

FIG. 2 is a perspective view showing a plurality of wafers supported by a supporting means (boat).

FIG. 3 is an explanatory diagram schematically showing a state when infrared rays are radiated from a heating lamp toward a wafer.

FIG. 4 is a graph showing changes in the state of attached water in a drying process.

FIG. 5 is a schematic configuration diagram showing a second embodiment of the semiconductor wafer drying apparatus of the present invention.

FIG. 6 is an explanatory diagram schematically showing a state when a high frequency electric field is generated in the chamber by an electrostatic electrode.

FIG. 7 is a schematic configuration diagram showing a third embodiment of the semiconductor wafer drying apparatus of the present invention.

FIG. 8 is an explanatory diagram schematically showing a state when a high frequency electric field is generated in the chamber by the high frequency induction coil.

FIG. 9 is a schematic configuration diagram showing a fourth embodiment of the semiconductor wafer drying apparatus of the present invention.

FIG. 10 is an explanatory view schematically showing a state where a wafer is heated by heated dry nitrogen.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Chamber, 3 ... Support member (boat), 4 ... Heating lamp, 5 ... Dry pump, 6a-6c ... Chemical solution storage tank,
20 ... Electrostatic electrode, 30 ... Dielectric coil, 40 ... Heater, L
2 ... Ultrapure water supply line, L6 ... Dry nitrogen supply line.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Issei Kosuge             14-3 Shinizumi, Narita City, Chiba Prefecture Nogedaira Industrial Park               Applied Materials Japan Co., Ltd.             Inside the company F term (reference) 3L113 AA01 AB10 AC10 AC12 AC13                       AC28 AC67 BA01 DA02 DA06

Claims (11)

[Claims] 1. A device for drying a semiconductor wafer to which water adheres, comprising a processing chamber, a supporting means for supporting the wafer in the chamber, a decompressing means for decompressing the inside of the chamber, and an adhering device for the wafer. And a heating means for heating the surface of the wafer to a predetermined temperature in order to prevent the freezing of the water. 2. The heating means applies 40 to the wafer surface.
The semiconductor wafer drying apparatus according to claim 1, which is heated to -60 ° C. 3. An apparatus for drying a semiconductor wafer to which water adheres, the processing chamber transmitting infrared rays, a supporting means for supporting the wafer in the chamber, and a decompressing means for decompressing the inside of the chamber. An infrared irradiator that is disposed at a predetermined position outside the chamber and irradiates the wafer with infrared rays. 4. The supporting means is capable of supporting a plurality of the wafers in parallel with each other, and the supporting means and the infrared irradiating means are such that the infrared rays emitted from the infrared irradiating means are on the surface of the wafer. The semiconductor wafer drying apparatus according to claim 3, wherein the semiconductor wafer drying apparatus is arranged so as to be incident at a predetermined angle with respect to. 5. An apparatus for drying a semiconductor wafer to which water adheres, comprising a processing chamber having an electrical insulating property, a decompression means for decompressing the inside of the chamber, and at least one pair of static chambers facing each other through the chamber. An apparatus for drying a semiconductor wafer, comprising: an electric electrode; a power source for applying a voltage to the electrode; and a supporting means for supporting the wafer so that the wafer is arranged between the electrodes in the chamber. 6. The supporting means is capable of supporting a plurality of the wafers in parallel with each other, and the supporting means and the electrodes have an electric field generated by the electrodes oriented along the surface of the wafer. The semiconductor wafer drying apparatus according to claim 5, wherein the semiconductor wafer drying apparatus is arranged as follows. 7. An apparatus for drying a semiconductor wafer to which water adheres, the processing chamber having an electrically insulating property, a decompression means for decompressing the inside of the chamber, and a device wound around a predetermined position outside the chamber. A semiconductor wafer drying apparatus, comprising: an induction coil; a power supply for applying a voltage to the induction coil; and a supporting means for supporting the wafer so that the wafer is arranged in the induction coil in the chamber. apparatus. 8. The supporting means is capable of supporting a plurality of wafers in parallel with each other, and the supporting means and the induction coil have a direction of an electric field generated by the induction coil in the surface of the wafer. The semiconductor wafer drying apparatus according to claim 7, wherein the semiconductor wafer drying apparatus is arranged along the line. 9. An apparatus for drying a semiconductor wafer to which water adheres, comprising a processing chamber, a supporting means for supporting the wafer in the chamber, a decompressing means for decompressing the inside of the chamber, and a predetermined temperature. A semiconductor wafer drying apparatus, comprising: a gas supply unit that supplies heated dry air or dry nitrogen into the chamber. 10. The supporting means is capable of supporting a plurality of the wafers in parallel with each other, and the supporting means and the gas supply means are dry air or dry nitrogen supplied from the gas supply means. 10. The semiconductor wafer drying apparatus according to claim 9, wherein is arranged so as to pass between the adjacent wafers. 11. The semiconductor wafer drying apparatus according to claim 1, a chemical solution supply means for supplying a predetermined chemical solution into the chamber, and pure water for supplying pure water into the chamber. A semiconductor wafer cleaning / drying apparatus comprising: a supply unit.