CN111618044A - Cleaning method and cleaning device for laser graphite tray - Google Patents
Cleaning method and cleaning device for laser graphite tray Download PDFInfo
- Publication number
- CN111618044A CN111618044A CN201910149485.3A CN201910149485A CN111618044A CN 111618044 A CN111618044 A CN 111618044A CN 201910149485 A CN201910149485 A CN 201910149485A CN 111618044 A CN111618044 A CN 111618044A
- Authority
- CN
- China
- Prior art keywords
- tray
- graphite
- baking
- furnace
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
- B08B7/0085—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
Abstract
The invention relates to a cleaning method and a cleaning device for a laser graphite tray, belongs to the technical field of semiconductor cleaning, and mainly utilizes a baking tray furnace to process the laser graphite tray according to the defects of the existing tray processing technology. The method comprises the following steps of pressure division of a baking tray furnace, temperature rise of the baking tray furnace, introduction of mixed gas, vacuumizing, temperature maintenance, return to normal pressure and taking out of a graphite tray. By controlling the ratio of the processing pressure time to the mixed gas, the growth material on the surface of the tray is processed under the condition that the tray is not damaged, the yield of the laser epitaxial wafer is improved, the influence of impurities of the graphite tray on the performance of the laser device is reduced, the tray can be repeatedly utilized, and the waste of spare parts is reduced.
Description
Technical Field
The invention relates to a method for cleaning a graphite tray for a laser by using a baking tray furnace so as to achieve recycling, belonging to the technical field of semiconductors.
Background
Graphite has various advantages of high temperature resistance, small thermal expansion coefficient, good thermal stability, good strength at high temperature, good heat conducting property, easy processing and the like, and is widely applied to heating bases of various heating devices, but graphite materials have poor wear resistance, are easy to generate graphite powder, are easy to release adsorbed gas under vacuum, and restrict the use of graphite, so when the graphite is used under high-temperature vacuum, the graphite base material needs to be subjected to film coating treatment. The growth of the epitaxial wafer is mainly realized by carrying the substrate by a graphite plate, and the graphite plate for epitaxial growth is generally subjected to polishing covering treatment. The growth material grows the semiconductor structure by deposition on the substrate, the growth material also being deposited on the graphite disk to form the blanket. However, the growth material grows on the graphite plate for a long time, so that the thickness of the graphite plate is continuously increased, the material at the edge of a substrate groove on the graphite plate grows too much, the uniformity and the photoelectric parameters of an epitaxial wafer are influenced, and when the epitaxial material grows to a certain thickness, the probability of wafer cracking is increased when the wafer is taken after the growth is finished. Timely treatment of the material on the surface of the tray reduces the impact on growth parameters. However, in the process of handling the graphite tray, if the graphite tray is not handled properly, damage to the graphite tray is inevitable, and the service life of the graphite tray is reduced.
At present, the method is generally carried out in a disc knocking mode or a baking mode at home, and is also carried out in a Hydrogen Chloride (HCL) corrosion mode, but the improvement is not carried out on the original basis of equipment, and the system description of a specific corrosion process is not carried out.
Patent document No. 201110113400X provides an apparatus for cleaning a graphite plate for MOCVD equipment, which comprises a working chamber, a gas source system, a vacuum system, a heating system, a cooling system and a control system, wherein the working chamber comprises a furnace wall, a heat insulating layer, a heater and an introduction electrode; the heat insulation layer is fixedly connected with the furnace wall, and the lead-in electrode penetrates through the furnace wall from the outside of the furnace wall and the heat insulation layer and is fixedly connected with the heater; the air source system, the vacuum system, the heating system and the cooling system are respectively connected with the working chamber; the control system is respectively connected with the air source system, the vacuum system, the heating system and the cooling system; the graphite plate can be repeatedly used after being cleaned, but the temperature required by the method is higher, so that a large amount of energy is required for driving, the baking time is difficult to grasp by the thickness of the growth material of different graphite plates, waste to a certain degree is indirectly caused, and a device for treating corresponding tail gas is lacked.
Patent document No. CN2174690A discloses an MOCVD graphite plate cleaning device, which includes: the system comprises a gas circuit controller, a vacuum reaction chamber, a heating unit, a pressure controller, a pump and a tail gas treatment device; the gas circuit controller is used for mixing corrosive gas and carrier gas in proportion and then introducing the mixture into the vacuum reaction chamber, the heating unit is used for heating and controlling the temperature, the pressure controller is used for controlling the pressure, the mixed gas and the deposit on the surface of the graphite disc are fully reacted, and reaction residues are discharged out of the vacuum reaction chamber along with the carrier gas through a pump and enter a tail gas treatment device for purification treatment. The solution of this document can be used for cleaning solid deposits adhering to the graphite disk after epitaxial growth, but it requires additional equipment design, adds additional cost, and is difficult to control the uniformity and time of corrosion, which can have some effect on the graphite disk over time.
In summary, most of the existing methods for cleaning the tray are physical treatment on materials or in-situ treatment by using MOCVD, the flatness of the tray is easily damaged by physical treatment and knocking, and pipeline blockage and equipment utilization rate are easily caused by in-situ corrosion.
Disclosure of Invention
To physical treatment strike damage tray roughness, normal position corruption produces easily that the pipeline blocks up and equipment utilization rate, utilizes high temperature baking dish stove to let in the mist (nitrogen-hydrogen gas mixture) through the different pressure of different temperatures, has both solved the difficult problem of tray roughness, has reduced the dependence to MOCVD equipment again, has reduced the influence to the graphite plate, has prolonged the life of graphite plate, has reduced manufacturing cost. Aiming at the defects of the prior art in processing the laser graphite tray, the invention provides a tray processing method for a laser epitaxial graphite tray.
The invention also provides a device structure for cleaning.
The technical scheme of the invention is as follows:
a method for cleaning a laser graphite tray comprises the following steps:
(1) opening the baking tray furnace, putting the laser graphite tray into the baking tray furnace, and enabling the surface with the growth material to face the heating wire of the baking tray furnace;
(2) closing the baking oven and vacuumizing to 0.01-10 mbar;
(3) heating the baking tray furnace after the vacuum degree reaches 0.01-10 mbar;
(4) firstly, heating the baking tray furnace from room temperature to 1200 ℃ for 60-240 minutes; adding nitrogen-hydrogen mixed gas with the hydrogen content of 5-50% while heating, so as to accelerate the decomposition of the surface material of the graphite disc during the heating;
(5) after the temperature is raised to 1200 ℃, keeping the temperature unchanged, and aerating mixed gas for 10-30 minutes to ensure that the pressure is 1-100 mbar; stopping inflating after the pressure is reached, and keeping the temperature for 30-120 minutes; then vacuumizing to the pressure of 0.01-10 mbar; in the step, mixed gas is filled, heat preservation and vacuumizing are carried out for cycle repetition for 1-20 times, and the discharge of materials in the cavity is accelerated;
(6) after the circulation is finished, cooling the equipment for 30-120 minutes; after the temperature is reduced to 700-;
(7) after the temperature of the cavity is reduced to the normal temperature, the pressure is increased from 700 and 900mbar to the normal pressure of 1000 mbar; and opening the baking pan furnace, and taking out the graphite pan.
By the method, the decomposition of substances on the surface of the graphite tray is accelerated, and the substances are quickly discharged out of the cavity, so that the cleanliness of the graphite tray is obviously improved, the overall yield of the laser epitaxial wafer is improved, and residual impurities of the graphite tray are removed to the maximum extent.
According to the invention, the method also comprises the step (8), after the graphite plate is taken out, the door of the baking tray is closed, and the vacuum pump is opened to pump vacuum to 0.1-500 mbar; when the material is used for the next time, the pressure of the baking oven is increased from 0.1-500mbar to 1000mbar, and then the step (1) is carried out. The negative pressure in the cavity is ensured, and the long-term contact with air is avoided.
The utility model provides a belt cleaning device of laser instrument graphite tray, its structure includes the baking pan stove, and the baking pan stove includes baking pan stove cavity, places the graphite plate in the baking pan stove cavity, connects on the baking pan stove cavity to be equipped with air inlet pipeline and exhaust pipe, and the exhaust pipe is equipped with main valve of taking out including filtering the pipeline and mainly taking out the pipeline, and main taking out is equipped with on the pipeline and mainly takes out the valve, is equipped with tail gas management device and discharge valve on the filter pipe way, filters the pipeline and mainly takes out the pipeline and all is connected to the main pump, and the spray tower is. The main pumping pipeline is used for rapidly exhausting the baking tray furnace cavity before and after the graphite tray material is decomposed and cleaned, and the filtering pipeline is used for exhausting and filtering in the process of cleaning and decomposing the graphite tray material. The tail gas is treated by a compound, is purified by a chemical reagent, and is subjected to harmless treatment in a tail gas spray tower to be discharged into the atmosphere, so that the tail gas is discharged after reaching the standard, and air pollution is avoided.
Preferably, the tail gas management device includes arsenic filter and phosphorus filter, and the last discharge valve quantity of filter tube is two, sets up respectively in tail gas management device's both ends, and the discharge valve is the electromagnetic pneumatic valve. Effectively collect arsenic and phosphorus materials. As the graphite tray for the laser contains compounds such as arsenic, phosphorus and the like, the pipeline is additionally provided with the arsenic and phosphorus filters and the electromagnetic pneumatic valves at the front end and the rear end, so that air is prevented from entering the phosphorus filter to burn when the vacuum pumping and the pressure reduction are carried out.
Further preferably, a water-cooling circulation device is arranged outside the phosphorus filter, and the set circulating water temperature of the phosphorus filter is-5 to 18 ℃.
Preferably, a heat insulation layer is arranged outside the baking tray furnace cavity, a heater is arranged in the baking tray furnace cavity, and the leading-in electrode penetrates through the furnace wall and the heat insulation layer from the outside of the furnace wall to enter the baking tray furnace cavity and is fixedly connected with the heater.
The invention has the beneficial effects that:
according to the technical scheme of the invention, after the tray is treated, the influence on the surface covering protection material is small, the flatness of the tray is not influenced, the tray is not damaged due to physical action, the uniformity of the graphite tray in use is not influenced, and the repeated utilization rate of the tray is greatly increased. The technical scheme is directly completed by using the baking tray furnace, reduces the dependence on MOCVD equipment, and greatly improves the utilization rate and the performance of the laser epitaxial wafer.
The invention adopts the baking tray of the baking tray furnace, does not occupy the production time of MOCVD equipment, improves the capacity utilization rate of the MOCVD equipment, avoids the risk that the tail gas pipeline is easy to block due to the corrosion of hydrogen chloride, increases the maintenance time and cost, and also improves the capacity utilization rate of the equipment. The corrosion of the graphite plate can generate chemical deposition on the surface of the graphite plate, the influence is generated on the product quality of the equipment at the initial stage of plate changing, no chemical residue exists after the baking plate is baked, and the product quality is improved.
Drawings
FIG. 1 is a schematic structural diagram of a cleaning device for a laser graphite tray according to the present invention;
wherein: 1. the device comprises an air inlet pipeline 2, a baking tray furnace cavity 3, a graphite tray 4, a main pumping valve 5, a 6 exhaust valve 7, an arsenic filter 8, a phosphorus filter 9, a main pump 10 and a spray tower.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1:
a method for cleaning a laser graphite tray comprises the following steps:
(1) opening the baking tray furnace, putting the laser graphite tray into the baking tray furnace, and enabling the surface with the growth material to face the heating wire of the baking tray furnace;
(2) closing the baking oven and vacuumizing to 0.6 mbar;
(3) heating the baking tray furnace after the vacuum degree reaches 0.6 mbar;
(4) firstly, heating the baking tray furnace from room temperature to 1200 ℃ for 130 minutes; adding nitrogen-hydrogen mixed gas with the hydrogen content of 35% while heating, so as to accelerate the decomposition of the surface material of the graphite disk during the heating;
(5) after the temperature has risen to 1200 ℃, keeping the temperature constant, and aerating the mixed gas for 10 minutes to make the pressure to 20 mbar; stopping inflating after the pressure is reached, and keeping the temperature for 30 minutes; then vacuumizing until the pressure is 0.6 mbar; in the step, mixed gas is filled, heat preservation and vacuumizing are carried out for cycle repetition for 3 times, and the discharge of materials in the cavity is accelerated;
(6) after the circulation is finished, cooling the equipment for 30 minutes; after the temperature is reduced to 950 ℃, nitrogen is filled, the pressure is 700mbar, and an air door and an exhaust fan are opened to bring heat to the cavity wall through airflow to accelerate the temperature reduction process;
(7) after the temperature of the cavity is reduced to the normal temperature, the pressure is increased from 700mbar to the normal pressure of 1000 mbar; and opening the baking pan furnace, and taking out the graphite pan.
By the method, the decomposition of substances on the surface of the graphite tray is accelerated, and the substances are quickly discharged out of the cavity, so that the cleanliness of the graphite tray is obviously improved, the overall yield of the laser epitaxial wafer is improved, and residual impurities of the graphite tray are removed to the maximum extent.
Example 2:
a method for cleaning a laser graphite tray comprises the following steps:
(1) opening the baking tray furnace, putting the laser graphite tray into the baking tray furnace, and enabling the surface with the growth material to face the heating wire of the baking tray furnace;
(2) closing the baking oven and vacuumizing to 0.01 mbar;
(3) heating the baking tray furnace after the vacuum degree reaches 0.01 mbar;
(4) firstly, heating the baking tray furnace from room temperature to 1200 ℃ for 60 minutes; adding nitrogen-hydrogen mixed gas with the hydrogen content of 5% while heating, so as to accelerate the decomposition of the surface material of the graphite disk during the heating;
(5) after the temperature had risen to 1200 ℃ the temperature was kept constant and the mixture was aerated for 10 minutes to bring the pressure to 1 mbar; stopping inflating after the pressure is reached, and keeping the temperature for 30 minutes; then vacuumizing until the pressure is 0.01 mbar; in the step, mixed gas is filled, heat preservation and vacuumizing are carried out for cycle repetition for 2 times, and the discharge of materials in the cavity is accelerated;
(6) after the circulation is finished, cooling the equipment for 30 minutes; after the temperature is reduced to 700 ℃, nitrogen is filled, the pressure is 700mbar, and an air door and an exhaust fan are opened to bring heat to the cavity wall through airflow to accelerate the temperature reduction process;
(7) after the temperature of the cavity is reduced to the normal temperature, the pressure is increased from 700mbar to the normal pressure of 1000 mbar; and opening the baking pan furnace, and taking out the graphite pan.
By the method, the decomposition of substances on the surface of the graphite tray is accelerated, and the substances are quickly discharged out of the cavity, so that the cleanliness of the graphite tray is obviously improved, the overall yield of the laser epitaxial wafer is improved, and residual impurities of the graphite tray are removed to the maximum extent.
Example 3:
a method for cleaning a laser graphite tray, the steps of which are as described in example 2, except that,
(1) opening the baking tray furnace, putting the laser graphite tray into the baking tray furnace, and enabling the surface with the growth material to face the heating wire of the baking tray furnace;
(2) closing the baking oven and vacuumizing to 10 mbar;
(3) heating the baking tray furnace after the vacuum degree reaches 10 mbar;
(4) firstly, heating the baking tray furnace from room temperature to 1200 ℃ for 240 minutes; adding nitrogen-hydrogen mixed gas with the hydrogen content of 50% while heating, so as to accelerate the decomposition of the surface material of the graphite disk during the heating;
(5) after the temperature has risen to 1200 ℃, keeping the temperature constant, and aerating the mixed gas for 30 minutes to ensure that the pressure is 100 mbar; stopping inflating after the pressure is reached, and keeping the temperature for 120 minutes; then vacuumizing until the pressure is 10 mbar; in the step, mixed gas is filled, heat preservation and vacuumizing are carried out for 20 times of circulation, and the discharge of materials in the cavity is accelerated;
(6) after the circulation is finished, cooling the equipment for 120 minutes; after the temperature is reduced to 1000 ℃, nitrogen is filled, the pressure is 900mbar, and an air door and an exhaust fan are opened to bring heat to the cavity wall through airflow to accelerate the temperature reduction process;
(7) after the temperature of the cavity is reduced to the normal temperature, the pressure is increased from 900mbar to the normal pressure of 1000 mbar; and opening the baking pan furnace, and taking out the graphite pan.
Example 4:
a method for cleaning a laser graphite tray, which comprises the steps as described in embodiment 2, except that the method further comprises the step (8) of closing a baking tray furnace door after the graphite tray is taken out, and opening a vacuum pump to pump vacuum to 0.1-500 mbar; when the material is used for the next time, the pressure of the baking oven is increased from 0.1-500mbar to 1000mbar, and then the step (1) is carried out. The negative pressure in the cavity is ensured, and the long-term contact with air is avoided.
Example 5:
the utility model provides a belt cleaning device of laser instrument graphite tray, as shown in figure 1, its structure includes the overware stove, the overware stove includes overware stove cavity, place the graphite dish in the overware stove cavity, connect on the overware stove cavity and be equipped with air inlet pipeline and exhaust pipe, the exhaust pipe is including filtering the pipeline and mainly take out the pipeline, it takes out the valve mainly to be equipped with on the pipeline to take out, be equipped with tail gas management device and discharge valve on the filtering pipe way, filtering the pipeline and mainly taking out the pipeline and all being connected to the main pump, the spray column is connected to the main pump, the working procedure is as embodiment 1. And the main pumping pipeline is used for quickly exhausting the baking tray furnace cavity before and after the graphite tray material is decomposed and cleaned, and the main pumping valve 4 and the main pump 9 are opened for vacuumizing in the step (3). The filtering pipeline is used for exhausting gas and filtering in the process of cleaning and decomposing the graphite disc material, and in step (4), the main extraction valve 4 needs to be closed, and the exhaust valve needs to be opened, so that the gas passes through the filtering pipeline. The tail gas is treated by a compound, is purified by a chemical reagent, and is subjected to harmless treatment in a tail gas spray tower to be discharged into the atmosphere, so that the tail gas is discharged after reaching the standard, and air pollution is avoided.
Example 6:
the utility model provides a belt cleaning device of laser instrument graphite tray, its structure is as embodiment 5, the difference is that, and the tail gas management device includes arsenic filter and phosphorus filter, and the last discharge valve quantity of filter line is two, sets up respectively in the both ends of tail gas management device, and discharge valve is the electromagnetic pneumatic valve. Effectively collect arsenic and phosphorus materials. As the graphite tray for the laser contains compounds such as arsenic, phosphorus and the like, the pipeline is additionally provided with the arsenic and phosphorus filters and the electromagnetic pneumatic valves at the front end and the rear end, so that air is prevented from entering the phosphorus filter to burn when the vacuum pumping and the pressure reduction are carried out.
Example 7:
a cleaning device for a laser graphite tray, which has the structure as described in embodiment 6, except that a water cooling circulation device is provided outside the phosphorus filter, and the temperature of the circulation water of the phosphorus filter is set to be-5 to 18 ℃.
Example 8:
the structure of the cleaning device for the laser graphite tray is as described in embodiment 5, except that a heat insulation layer is arranged outside a baking tray furnace cavity, a heater is arranged in the baking tray furnace cavity, and an introduction electrode penetrates through a furnace wall and the heat insulation layer from the outside of the furnace wall to enter the baking tray furnace cavity to be fixedly connected with the heater.
Claims (6)
1. A cleaning method of a laser graphite tray is characterized by comprising the following steps:
(1) opening the baking tray furnace, putting the laser graphite tray into the baking tray furnace, and enabling the surface with the growth material to face the heating wire of the baking tray furnace;
(2) closing the baking oven and vacuumizing to 0.01-10 mbar;
(3) heating the baking tray furnace after the vacuum degree reaches 0.01-10 mbar;
(4) firstly, heating the baking tray furnace from room temperature to 1200 ℃ for 60-240 minutes; adding nitrogen-hydrogen mixed gas with the hydrogen content of 5-50% while heating;
(5) after the temperature is raised to 1200 ℃, keeping the temperature unchanged, and aerating mixed gas for 10-30 minutes to ensure that the pressure is 1-100 mbar; stopping inflating after the pressure is reached, and keeping the temperature for 30-120 minutes; then vacuumizing to the pressure of 0.01-10 mbar; in the step, mixed gas is filled, heat preservation and vacuumizing are carried out for cycle repetition for 1-20 times;
(6) after the circulation is finished, cooling the equipment for 30-120 minutes; after the temperature is reduced to 700 ℃ and 1000 ℃, nitrogen is filled, and the pressure is 900 mbar;
(7) after the temperature of the cavity is reduced to the normal temperature, the pressure is increased from 700 and 900mbar to the normal pressure of 1000 mbar; and opening the baking pan furnace, and taking out the graphite pan.
2. The method of claim 1, further comprising the step of cleaning the laser graphite tray
(8) After the graphite plate is taken out, closing the oven door of the baking tray, and opening a vacuum pump to pump vacuum to 0.1-500 mbar; when the material is used for the next time, the pressure of the baking oven is increased from 0.1-500mbar to 1000mbar, and then the step (1) is carried out.
3. The utility model provides a belt cleaning device of laser instrument graphite tray, a serial communication port, its structure includes the baking pan stove, the baking pan stove includes baking pan stove cavity, place the graphite dish in the baking pan stove cavity, it is equipped with air inlet pipeline and exhaust pipe to connect on the baking pan stove cavity, the exhaust pipe is equipped with main valve of taking out including filtering the pipeline and mainly taking out the pipeline, it takes out to be equipped with owner on the pipeline to mainly take out, be equipped with tail gas management device and discharge valve on the filtering duct, it all is connected to the main pump to filter the pipeline and mainly take out the pipeline, the spray tower is connected to.
4. The cleaning device for the laser graphite tray as claimed in claim 3, wherein the exhaust gas management device comprises an arsenic filter and a phosphorus filter, the number of the exhaust valves on the filtering pipeline is two, the two exhaust valves are respectively arranged at two ends of the exhaust gas management device, and the exhaust valves are electromagnetic pneumatic valves.
5. The cleaning device for the laser graphite tray as claimed in claim 4, wherein a water cooling circulation device is arranged outside the phosphorus filter, and the set circulating water temperature of the phosphorus filter is-5 to 18 ℃.
6. The cleaning device for the laser graphite tray as claimed in claim 3, wherein a heat insulation layer is arranged outside the baking tray furnace cavity, a heater is arranged in the baking tray furnace cavity, and the lead-in electrode penetrates through the furnace wall and the heat insulation layer from the outside of the furnace wall to enter the baking tray furnace cavity and is fixedly connected with the heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910149485.3A CN111618044A (en) | 2019-02-28 | 2019-02-28 | Cleaning method and cleaning device for laser graphite tray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910149485.3A CN111618044A (en) | 2019-02-28 | 2019-02-28 | Cleaning method and cleaning device for laser graphite tray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111618044A true CN111618044A (en) | 2020-09-04 |
Family
ID=72255839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910149485.3A Pending CN111618044A (en) | 2019-02-28 | 2019-02-28 | Cleaning method and cleaning device for laser graphite tray |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111618044A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101041892A (en) * | 2006-03-20 | 2007-09-26 | 中国科学院半导体研究所 | Graphite washing unit |
| JP2009136728A (en) * | 2007-12-04 | 2009-06-25 | Panasonic Corp | Substrate cleaning device, and substrate cleaning method |
| CN102174690A (en) * | 2011-01-13 | 2011-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | MOCVD (metal-organic chemical vapor deposition) graphite disc cleaning device |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN204550789U (en) * | 2015-04-07 | 2015-08-12 | 安徽三安光电有限公司 | Adopt graphite plate outside a kind of and clean stove |
| CN105834171A (en) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | Method for corrosion cleaning of graphite tray by using MOCVD equipment |
| CN106146045A (en) * | 2016-09-05 | 2016-11-23 | 江苏协鑫特种材料科技有限公司 | A kind of method and device of graphite piece surface depositing silicon silicon |
| CN205956645U (en) * | 2016-08-03 | 2017-02-15 | 中山德华芯片技术有限公司 | Scale deposit is prevented to pipeline structure for MOCVD vent gas treatment system in |
-
2019
- 2019-02-28 CN CN201910149485.3A patent/CN111618044A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101041892A (en) * | 2006-03-20 | 2007-09-26 | 中国科学院半导体研究所 | Graphite washing unit |
| JP2009136728A (en) * | 2007-12-04 | 2009-06-25 | Panasonic Corp | Substrate cleaning device, and substrate cleaning method |
| CN102174690A (en) * | 2011-01-13 | 2011-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | MOCVD (metal-organic chemical vapor deposition) graphite disc cleaning device |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN204550789U (en) * | 2015-04-07 | 2015-08-12 | 安徽三安光电有限公司 | Adopt graphite plate outside a kind of and clean stove |
| CN105834171A (en) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | Method for corrosion cleaning of graphite tray by using MOCVD equipment |
| CN205956645U (en) * | 2016-08-03 | 2017-02-15 | 中山德华芯片技术有限公司 | Scale deposit is prevented to pipeline structure for MOCVD vent gas treatment system in |
| CN106146045A (en) * | 2016-09-05 | 2016-11-23 | 江苏协鑫特种材料科技有限公司 | A kind of method and device of graphite piece surface depositing silicon silicon |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100519835C (en) | Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell | |
| CN110644048A (en) | Chemical vapor deposition method and device for preparing polycrystalline silicon carbide | |
| CN101192531B (en) | Method for processing polysilazanes film | |
| CN111618044A (en) | Cleaning method and cleaning device for laser graphite tray | |
| CN112885709B (en) | Preparation method of silicon carbide epitaxial structure and semiconductor device | |
| KR101731410B1 (en) | Method for depositing polycrystalline silicone | |
| WO2011079699A1 (en) | Method and plasma enhanced chemical vapor deposition system for removing film contamination produced during working process | |
| CN103643220A (en) | Method for decreasing impurity particles in low pressure furnace tube | |
| EP3854492A1 (en) | Apparatus for cleaning component of semiconductor production apparatus, method for cleaning component of semiconductor production apparatus, and system for cleaning component of semiconductor production apparatus | |
| CN204550789U (en) | Adopt graphite plate outside a kind of and clean stove | |
| WO2012117758A1 (en) | Dry cleaning method | |
| CN103938268A (en) | Method for reducing surface grain density of silicon carbide epitaxial wafer | |
| CN111370284B (en) | Cleaning method for semiconductor heat treatment equipment | |
| CN111229736A (en) | Cleaning method of graphite boat for manufacturing solar cell | |
| CN113564558B (en) | Chemical vapor deposition and annealing continuous processing device, method and application | |
| CN111490126A (en) | Method for cleaning carrier plate | |
| CN107771226A (en) | The preparation method that the reactor of epitaxial growth restarts is carried out on chip | |
| US7972961B2 (en) | Purge step-controlled sequence of processing semiconductor wafers | |
| CN114029300B (en) | Method for cleaning graphite plate | |
| TWM620034U (en) | Vacuum furnace capable of introducing gas to remove deposits | |
| CN116516470A (en) | Reset method after oven maintenance | |
| CN210001929U (en) | equipment for remotely cleaning PECVD chamber by plasma | |
| CN213845238U (en) | Vacuum furnace capable of removing nitride coating by introducing hydrogen chloride | |
| CN111129223B (en) | Novel superlattice infrared detector preparation method | |
| TWM612597U (en) | Vacuum furnace capable of introducing hydrogen chloride to remove nitride coating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200904 |
|
| RJ01 | Rejection of invention patent application after publication |