CN102764745A - Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device - Google Patents

Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device Download PDF

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Publication number
CN102764745A
CN102764745A CN201110113400XA CN201110113400A CN102764745A CN 102764745 A CN102764745 A CN 102764745A CN 201110113400X A CN201110113400X A CN 201110113400XA CN 201110113400 A CN201110113400 A CN 201110113400A CN 102764745 A CN102764745 A CN 102764745A
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China
Prior art keywords
baking tray
graphite plate
operating room
cleaning
mocvd equipment
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CN201110113400XA
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Chinese (zh)
Inventor
宋立禄
胡孝策
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QINGDAO RADAR ELECTRONICS CO Ltd
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QINGDAO RADAR ELECTRONICS CO Ltd
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Priority to CN201110113400XA priority Critical patent/CN102764745A/en
Publication of CN102764745A publication Critical patent/CN102764745A/en
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Abstract

The invention provides a baking furnace device of a graphite disk for cleaning a MOCVD (metal-organic chemical vapor deposition) device. The baking furnace device comprises an operation room, an air source system, a vacuum system, a heating system, a cooling system and a control system. The operation room comprises a furnace, a thermal-protective coating, a heater, and an incoming electrode. The thermal-protective coating is fixedly connected with the furnace, and the incoming electrode penetrates through a furnace wall and the thermal-protective coating from the outside of the furnace and is fixedly connected with the heater. The air source system, the vacuum system, the heating system and the cooling system are respectively connected with the operation room. The control system is respectively connected with the air source system, the vacuum system, the heating system and the cooling system. The baking furnace device of the graphite disk for cleaning the MOCVD device solves the problem that production of LED (light-emitting diode) epitaxial slices is always troubled by deposits on the graphite disk, so that the graphite disk can be repeatedly used after being cleaned, and accordingly production cost is lowered, fine quality is guaranteed in MOCVD processing procedure of the production of the LED chips.

Description

Clean the baking tray furnace apparatus of MOCVD equipment with graphite plate
Technical field
The present invention relates to clean the baking tray furnace apparatus of MOCVD equipment with graphite plate.
Background technology
The basic principle of the LED epitaxial wafer growth before led chip produces is that gaseous material InGaAlP has the substrate surface that is transported to of control, grows specific monocrystal thin films on a substrate base that is heated to proper temperature (mainly containing sapphire and, SiC, Si).LED epitaxial wafer growing technology mainly adopts MOCVD (metallo-organic compound chemical vapor deposition) technology at present; MOCVD equipment collection precision optical machinery, semi-conducting material, vacuum electronic, hydrodynamics, optics, chemistry, computer is multidisciplinary is one; Be a kind of automaticity high, cost an arm and a leg, most advanced and sophisticated photoelectron special equipment that the technology integrated level is high, the manufacturing of the epitaxial growth that is mainly used in GaN (gallium nitride) based semiconductor material and blue, green or ultra-violet light-emitting diode chip.
In the MOCVD technology that LED produces, understand the deposition of solid that on graphite plate, forms materials such as GaAs.After forming deposit on the graphite plate, the graphite plate that need more renew just can be guaranteed to produce and carries out smoothly, thereby production cost is improved.In order to reuse graphite plate, can also clean it, yet the deposit that how to clean on the graphite plate perplexs the difficult problem that the LED epitaxial wafer is produced always.
Summary of the invention
[0005] in order to solve above technical problem; The invention provides the baking tray furnace apparatus of a kind of MOCVD of cleaning equipment with graphite plate; It can remove deposit on the graphite plate; Graphite plate can repeatedly be used after cleaning repeatedly, reduce production costs, for the MOCVD technical process of led chip production good quality assurance is provided simultaneously thereby solve a production difficult problem.
Cleaning MOCVD equipment according to the invention comprises operating room, air supply system, vacuum system, heating system, cooling system and control system with the baking tray furnace apparatus of graphite plate, wherein:
The operating room comprises furnace wall, thermal insulation layer, heater, introducing electrode; Thermal insulation layer is fixedly connected with the furnace wall, introduces electrode and is fixedly connected with thermal insulation layer and with heater by passing the furnace wall outside the furnace wall;
Air supply system, vacuum system, heating system, cooling system link to each other with the operating room respectively;
The control system links to each other respectively with air supply system, vacuum system, heating system, cooling system.
During work, open fire door, put into the heater of operating room being coated with sedimental graphite plate, after closed fire door; Start vacuum system and heating system, after reaching certain vacuum desired value and temperature objectives value, start air supply system, just charged into N in the stove at this moment 2Perhaps N 2, H 2Mist.In the environment of this high-temperature low-pressure of body of heater, after after a while, deposit just can all evaporate into gas, through vacuum system it is taken away, thereby reaches the purpose that cleans graphite plate.After cleaning finished, cooling system was started working, in cooling procedure; According to the principle that gas expands with heat and contract with cold, pressure in the burner hearth can slowly be lower than the force value of setting, this moment air supply system can be in the trend stove make-up gas; Recover pressure; Until normal temperature and pressure, can open fire door, take out the graphite plate that has cleaned completion.
Cleaning MOCVD equipment according to the invention is one and is used for LED is produced the special equipment that used graphite plate cleans with the baking tray furnace apparatus of graphite plate, is the baking tray furnace apparatus of domestic first successful development and application.It has solved the deposit on the graphite plate and has perplexed the difficult problem that the LED epitaxial wafer is produced always, graphite plate can repeatedly be used after cleaning repeatedly, thereby reduce production costs, and also for the MOCVD technical process of led chip production good quality assurance is provided.
For obtaining better effect, cleaning MOCVD equipment according to the invention can adopt following measure with the baking tray furnace apparatus of graphite plate:
1, the furnace wall in the said operating room is the double-layer stainless steel plate structure, has spiral to divide water ring between the interlayer.It is the spiral helicine water-cooling system of annular that said spiral divides water ring; Cooling water circulates in this system, disposes until graphite boat owing to bring into operation from the baking tray stove, remains high temperature in the stove and possibly cause the temperature distortion of whole operating room; Wherein discharge a large amount of heats and possibly reach the furnace wall through thermal insulation layer; This spiral divides water ring better to reach cooling effect, makes the furnace wall cooling evenly, has guaranteed that furnace body outer wall is a room temperature.
2, the heater in the said operating room is a mouse-cage type.Can fully guarantee the intensity and the warm place uniformity of heater like this.
3, the thermal insulation layer in the said operating room mainly is made up of graphite felt, graphite tube and corrosion resistant plate.
4, the thermal insulation layer in the said operating room is fixedly connected with the furnace wall through support.
5, said air supply system comprises mass flowmenter, pneumatic operated valve, pipeline.Wherein, pneumatic operated valve by control system control with the fit quality flowmeter, thereby be that the operating room provides technology and protective gas through pipeline.
6, said vacuum system comprises vavuum pump, cold-trap, valve and vacuum meter.Wherein, vavuum pump links to each other with the operating room through valve, and when finding time, control system acting valve is opened it, vacuum meter then the indoor vacuum of surveying work and with signal feedback to the control system.
7, said heating system is made up of power adjustment plate, pressure regulator and heater and thermocouple.Wherein, temperature signal is detected by thermocouple, sends into the control system and handles; Send control signal by the control system then; Send into the power adjustment plate on the direct current source plate, go to control the power output of pressure regulator by power adjustment plate, thereby accomplish temperature controlling through control to heater.
8, said cooling system is made up of pipe-line system, wind circulating system.During cooling, pipe-line system can charge into N in the trend stove under the effect of control system 2, wind circulating system starts, and makes gas circulation between (workpiece place) in furnace wall and burner hearth, through the furnace wall heat in the burner hearth is taken away.
9, said control system mainly comprises temperature control unit, air supply system control module, vacuum system control module.Wherein, after temperature control unit receives temperature signal, send instruction to heating system and cooling system, control heating system and cooling system bring into operation in suitable program; The vacuum system unit is responsible for vacuum system is controlled, and accomplishes bleeding to the operating room through the action vavuum pump; The air supply system control module is then controlled air supply system, when reaching certain pressure limit in the operating room it is inflated.
Description of drawings
Fig. 1 is the structural representation of cleaning MOCVD equipment according to the invention with the baking tray furnace apparatus of graphite plate.
Fig. 2 is the structure chart of operating room shown in Fig. 1.
Numbering explanation among the figure:
The 1-furnace wall; The 2-support; The 3-thermal insulation layer; 4-mouse-cage type heater; 5-introduces electrode.
The specific embodiment
In conjunction with Fig. 1 to Fig. 2 the baking tray furnace apparatus of said cleaning MOCVD equipment with graphite plate is elaborated.
As shown in Figure 1; Cleaning MOCVD equipment according to the invention is with the baking tray furnace apparatus of graphite plate; Comprise operating room, air supply system, vacuum system, heating system, cooling system and control system, wherein air supply system, vacuum system, heating system, cooling system link to each other with the operating room respectively; The control system links to each other respectively with air supply system, vacuum system, heating system, cooling system, wherein:
Said air supply system comprises mass flowmenter, pneumatic operated valve, pipeline.The control system gathers and signal voltage transmission through its A/D and D/A module, thus the flow size of control mass flowmenter; Simultaneously, the control system comes the fit quality flowmeter through the control pneumatic operated valve, thus charging in the operating room the gas success.
Said vacuum system comprises vavuum pump, cold-trap, valve and vacuum meter.Wherein, vavuum pump links to each other with the operating room through valve, when needs vacuumize; Control system acting valve is opened it, and vavuum pump is started working, and vacuum meter is the indoor vacuum of surveying work then; Along with vacuum system open-interval lengthening, the vacuum in the operating room is just increasingly high; After reaching the target vacuum value, vacuum meter is given the control system with signal feedback.
Said heating system is made up of power adjustment plate, pressure regulator and heater and thermocouple.Wherein, temperature signal is detected by thermocouple, sends into the control system and handles; Send control signal by the control system then; Send into the power adjustment plate on the direct current source plate, go to control the power output of pressure regulator by power adjustment plate, thereby accomplish temperature controlling through control to heater.
Said cooling system is made up of pipe-line system, wind circulating system.Wherein, pipe-line system is distributed in the bottom of operating room, and wind circulating system is distributed in the rear portion of operating room, and when running to quick cooling program, pipe-line system can charge into N in the trend stove under the effect of control system 2, and reach pre-set pressure.At this moment wind circulating system starts, and makes gas circulation between (workpiece place) in furnace wall and burner hearth, through the furnace wall heat in the burner hearth is taken away, and accomplishes the operation of cooling fast.
Said control system mainly comprises temperature control unit, air supply system control module, vacuum system control module.Wherein,
Temperature control unit adopts intelligent instrument specially for same, and main control unit is carried out and set and monitoring temperature curve on computers through communication port and instrument communication.Temperature control intelligent instrument specially for same antijamming capability is strong, and the control system is not produced interference.There is cold-junction compensation inside, has reduced ambient temperature and has changed the thermocouple temperature measurement influence of fluctuations, has strengthened control accuracy more.
During work, open fire door, put into the heater of operating room being coated with sedimental graphite plate, after closed fire door; Start vacuum system and heating system, after reaching certain vacuum desired value and temperature objectives value, start air supply system, just charged into N in the stove at this moment 2Perhaps N 2, H 2Mist.In the environment of this high-temperature low-pressure of body of heater, after after a while, deposit just can all evaporate into gas, through vacuum system it is taken away, thereby reaches the purpose that cleans graphite plate.After cleaning finished, cooling system was started working, in cooling procedure; According to the principle that gas expands with heat and contract with cold, pressure in the burner hearth can slowly be lower than the force value of setting, this moment air supply system can be in the trend stove make-up gas; Recover pressure; Until normal temperature and pressure, can open fire door, take out the graphite plate that has cleaned completion.
Fig. 2 is the structure chart of cleaning MOCVD equipment according to the invention with operating room in the baking tray furnace apparatus of graphite plate.
The operating room comprises furnace wall 1, support 2, thermal insulation layer 3, mouse cage heater 4, introduces electrode 5; Wherein thermal insulation layer 3 is fixedly connected with furnace wall 1 through support 2, introduces electrode 5 and is fixedly connected with thermal insulation layer 3 and with mouse cage heater 4 by passing furnace wall 1 outside the furnace wall 1; Wherein
The furnace wall is the double-layer stainless steel plate structure, has spiral to divide water ring between the interlayer, and it is the spiral helicine water-cooling system of annular that said spiral divides water ring, and cooling water circulates in this system, can better reach cooling effect;
Thermal insulation layer mainly is made up of graphite felt, graphite tube and corrosion resistant plate, has good effect of heat insulation.
The whole process that graphite plate cleans is all accomplished in the operating room, and this structure makes the operating room in heating, living pressure process, can keep good insulation and sealing function, and the intensity and the warm place uniformity that fully guarantee heater.The temperature-fall period that finishes in cleaning can better reach cooling effect, makes the furnace wall cooling evenly, has guaranteed that furnace body outer wall is a room temperature.

Claims (10)

1. a baking tray furnace apparatus that cleans MOCVD equipment with graphite plate is characterized in that it comprises operating room, air supply system, vacuum system, heating system, cooling system and control system, and wherein the operating room comprises furnace wall, thermal insulation layer, heater, introducing electrode; Thermal insulation layer is fixedly connected with the furnace wall, introduces electrode and is fixedly connected with thermal insulation layer and with heater by passing the furnace wall outside the furnace wall; Air supply system, vacuum system, heating system, cooling system link to each other with the operating room respectively; The control system links to each other respectively with air supply system, vacuum system, heating system, cooling system.
2. cleaning MOCVD equipment according to claim 1 is characterized in that with the baking tray furnace apparatus of graphite plate the furnace wall in the said operating room is the double-layer stainless steel plate structure, has spiral to divide water ring between the interlayer.
3. cleaning MOCVD equipment according to claim 1 is characterized in that with the baking tray furnace apparatus of graphite plate the heater in the said operating room is a mouse-cage type.
4. cleaning MOCVD equipment according to claim 1 is characterized in that with the baking tray furnace apparatus of graphite plate the thermal insulation layer in the said operating room mainly is made up of graphite felt, graphite tube and corrosion resistant plate.
5. cleaning MOCVD equipment according to claim 1 is characterized in that with the baking tray furnace apparatus of graphite plate the thermal insulation layer in the said operating room is fixedly connected with the furnace wall through support.
6. according to each described cleaning of claim 1 to 5 MOCVD equipment baking tray furnace apparatus, it is characterized in that said air supply system comprises, mass flowmenter, pneumatic operated valve, pipeline with graphite plate.
7. according to each described cleaning of claim 1 to 5 MOCVD equipment baking tray furnace apparatus, it is characterized in that said vacuum system comprises, vavuum pump, cold-trap, valve and vacuum meter with graphite plate.
8. according to each described cleaning of claim 1 to 5 MOCVD equipment baking tray furnace apparatus, it is characterized in that said heating system is adjusted plate, pressure regulator and heater by a power and thermocouple is formed with graphite plate.
9. according to each described cleaning of claim 1 to 5 MOCVD equipment baking tray furnace apparatus, it is characterized in that said cooling system is made up of pipe-line system, wind circulating system with graphite plate.
10. according to each described cleaning of claim 1 to 5 MOCVD equipment baking tray furnace apparatus, it is characterized in that said control system mainly comprises temperature control unit, air supply system control module, vacuum system control module with graphite plate.
CN201110113400XA 2011-05-04 2011-05-04 Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device Pending CN102764745A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060769A (en) * 2013-01-29 2013-04-24 杭州士兰明芯科技有限公司 Etching and baking equipment and operation method thereof
CN103074600A (en) * 2013-01-29 2013-05-01 杭州士兰明芯科技有限公司 Etching roasting equipment
CN104925793A (en) * 2015-06-11 2015-09-23 湘能华磊光电股份有限公司 Method for removing GaN-based compounds on surface of graphite disc
CN106435470A (en) * 2016-11-09 2017-02-22 上海华力微电子有限公司 Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure
CN111618044A (en) * 2019-02-28 2020-09-04 潍坊华光光电子有限公司 Cleaning method and cleaning device for laser graphite tray

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059915A (en) * 2001-06-08 2003-02-28 Tokyo Electron Ltd Cleaning method for thin film formation system
JP2007227435A (en) * 2006-02-21 2007-09-06 Taiyo Nippon Sanso Corp Method of cleaning semiconductor manufacturing apparatus, cleaning apparatus, and semiconductor manufacturing apparatus
CN101041892A (en) * 2006-03-20 2007-09-26 中国科学院半导体研究所 Graphite washing unit
US20080216872A1 (en) * 2003-02-18 2008-09-11 Hisayoshi Yamoto Carburetor, Method of Vaporizing Material Solution, and Method of Washing Carburetor
CN201740384U (en) * 2010-03-30 2011-02-09 杭州海鲸光电科技有限公司 High-temperature vacuum baking oven
CN202070515U (en) * 2011-05-04 2011-12-14 青岛赛瑞达设备制造有限公司 Tray oven device used for cleaning graphite disc of MOCVD (Metal-organic Chemical Vapor Deposition) equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059915A (en) * 2001-06-08 2003-02-28 Tokyo Electron Ltd Cleaning method for thin film formation system
US20080216872A1 (en) * 2003-02-18 2008-09-11 Hisayoshi Yamoto Carburetor, Method of Vaporizing Material Solution, and Method of Washing Carburetor
JP2007227435A (en) * 2006-02-21 2007-09-06 Taiyo Nippon Sanso Corp Method of cleaning semiconductor manufacturing apparatus, cleaning apparatus, and semiconductor manufacturing apparatus
CN101041892A (en) * 2006-03-20 2007-09-26 中国科学院半导体研究所 Graphite washing unit
CN201740384U (en) * 2010-03-30 2011-02-09 杭州海鲸光电科技有限公司 High-temperature vacuum baking oven
CN202070515U (en) * 2011-05-04 2011-12-14 青岛赛瑞达设备制造有限公司 Tray oven device used for cleaning graphite disc of MOCVD (Metal-organic Chemical Vapor Deposition) equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060769A (en) * 2013-01-29 2013-04-24 杭州士兰明芯科技有限公司 Etching and baking equipment and operation method thereof
CN103074600A (en) * 2013-01-29 2013-05-01 杭州士兰明芯科技有限公司 Etching roasting equipment
CN103060769B (en) * 2013-01-29 2016-03-16 杭州士兰明芯科技有限公司 Etching roasting plant and working method thereof
CN104925793A (en) * 2015-06-11 2015-09-23 湘能华磊光电股份有限公司 Method for removing GaN-based compounds on surface of graphite disc
CN104925793B (en) * 2015-06-11 2017-03-01 湘能华磊光电股份有限公司 A kind of method removing graphite surface gan-based compound
CN106435470A (en) * 2016-11-09 2017-02-22 上海华力微电子有限公司 Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure
CN111618044A (en) * 2019-02-28 2020-09-04 潍坊华光光电子有限公司 Cleaning method and cleaning device for laser graphite tray

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Application publication date: 20121107