CN101041892A - Graphite washing unit - Google Patents
Graphite washing unit Download PDFInfo
- Publication number
- CN101041892A CN101041892A CN 200610064974 CN200610064974A CN101041892A CN 101041892 A CN101041892 A CN 101041892A CN 200610064974 CN200610064974 CN 200610064974 CN 200610064974 A CN200610064974 A CN 200610064974A CN 101041892 A CN101041892 A CN 101041892A
- Authority
- CN
- China
- Prior art keywords
- graphite
- shell
- washing unit
- heater
- base support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a graphite cleaning device, which comprises the following parts: case, which is hollow rectangular structure; graphite base rack, which is set on the bottom of case; graphite heater, which is box structure on the graphite base rack; insulating material, which surrounds the periphery of graphite heater; upper lid, which lies on the case; inductive coil, which is twisted on the periphery of case; three-path gas inlet, which is set on one side of case separately; tail gas discharge, which is set on the other side of case; temperature-control heat couple, which is under the case to connect graphite base rack. When the device cleans graphite base, it doesn't occupy equipment with high using rate for equipment.
Description
Technical field
The present invention is designed into the manufacturing field of semiconductor devices, particularly relates to the baking depositional texture in the MOCVD equipment.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) is since nineteen sixties at first proposes, through 70 development to the eighties, the nineties has become the mainstream technology of photoelectron material growths such as AsGa, InP, also is simultaneously the main stream approach of producing III group-III nitride LED.
The MOCVD equipment principle is that different starting material arrive substrate by the tuyere pipeline, (require to decide according to differing materials) usually under 200-2000 ℃ of temperature, react, and grow required thin-film material.In reaction process, resultant of reaction and intermediate product not only deposit on substrate material, also can deposit on reaction chamber wall and graphite base.In order to improve the quality of material, behind each thin-film material growth ending, need carry out clean to graphite base or reaction chamber wall, otherwise these settlings particularly the graphite base settling can in next process of growth, volatilize and transfer on the substrate, reduce the epitaxial wafer quality thus.Traditional cleaning process is carried out at reaction chamber.But this mode has following shortcoming: (1) has reduced the service efficiency of equipment when taking machine; (2) clean not thoroughly, toast untotally, miss one's aim sometimes.
Summary of the invention
The objective of the invention is graphite base in the MOCVD equipment process of growth to be carried out clean by a kind of new device, and clean is carried out outside the MOCVD reaction chamber, substitute the treating method of tradition baking graphite base in the reaction chamber of MOCVD, can effectively avoid reaching deposition again with this because the reactive deposition thing that baking graphite causes pollutes, reduce scavenging period, improve growth efficiency and growth quality.Feed high-purity chlorination and high-purity hydrogen when the present invention adopts baking in addition graphite handled, high-purity hydrogenchloride can with resultant of reaction generation chemical reaction, farthest settling on the graphite of place to go.Guarantee the cleaning of graphite base when next time growing, improved the quality of epitaxial wafer.
In order to reach above purpose, technical solution of the present invention is:
A kind of graphite washing unit of the present invention is characterized in that, comprising:
One shell, this shell are a hollow rectangular structure;
One graphite base support, this graphite base support is positioned at the bottom of shell;
One graphite heater, this graphite heater are a body structure, and this graphite heater is positioned at the top of graphite base support;
One lagging material, this lagging material be centered around graphite heater around;
One loam cake, this loam cake is positioned at the top of shell;
One induction coil, this induction coil is spirally wound on the periphery of shell;
Side at shell is separately installed with three tunnel gas inletes;
Opposite side at shell is equipped with an exhaust port;
The bottom that one temperature-control heat couple, this temperature-control heat couple are positioned at shell is connected with the graphite base support.
Wherein three tunnel gas inletes comprise: high pure nitrogen inlet, high-purity hydrogen inlet and high-purity HCI gas inlet.
Wherein this device is placed in the glove box of MOCVD equipment.
Wherein this shell is made with stainless steel or quartz material.
Wherein the heating work temperature range of this induction coil is 400 ℃-1300 ℃.
A kind of graphite washing unit of the present invention is characterized in that, comprising:
One shell, this shell are a hollow rectangular structure;
One graphite base support, this graphite base support is positioned at the bottom of shell;
One graphite heater, this graphite heater are a body structure, and this graphite heater is positioned at the top of graphite base support;
One lagging material, this lagging material be centered around graphite heater around;
One loam cake, this loam cake is positioned at the top of shell;
Graphite heater in one powered electrode, this powered electrode and shell is connected;
Side at shell is separately installed with three tunnel gas inletes;
Opposite side at shell is equipped with one road exhaust port;
The bottom that one temperature-control heat couple, this temperature-control heat couple are positioned at shell is connected with the graphite base support.
Wherein three tunnel gas inletes comprise: high pure nitrogen inlet, high-purity hydrogen inlet and high-purity HCI gas inlet.
Wherein this shell is made with stainless steel or quartz material.
Wherein the heating work temperature range of this powered electrode is 400 ℃-2800 ℃.
Wherein this device is placed in the glove box of MOCVD equipment.
Mechanism of the present invention and technical characterstic:
Graphite washing unit in the MOCVD equipment is a kind of novel washing unit that designs at the graphite clean process that must carry out in the material process of growth.This device is placed in the glove box in the MOCVD equipment, can guarantee that like this graphite base can shift between glove box and reaction chamber, has effectively avoided the pollution of graphite base.This device adopts high-purity hydrogenchloride (or hydrogen) as reactant gases, and heating simultaneously needs the graphite of cleaning, can carry out the cleaning processing to graphite to the full extent.
Description of drawings
Use of the present invention is described further patent of the present invention in order better to illustrate below in conjunction with drawings and Examples, wherein:
Fig. 1 is the synoptic diagram of graphite washing unit, also is the first embodiment of the present invention.
Fig. 2 is the graphite apparatus for baking that adopts the resistance wire heating, is the second embodiment of the present invention.
Wherein, 1 for high pure nitrogen inlet, 2 for the high-purity hydrogen inlet, 3 for high-purity HCI gas inlet, 4 for induction coil, 5 for temperature-control heat couple, 6 for exhaust port, 7 for loam cake, 8 for shell, 9 for graphite heater, 10 for the graphite base support, 11 for the graphite that is cleaned, 12 for lagging material, 13 be that powered electrode, 20 is three tunnel gas inletes.
Embodiment
See also shown in Figure 1ly, Fig. 1 is the first embodiment of the present invention, and a kind of graphite washing unit of the present invention is characterized in that, comprising:
One shell 8, this shell 8 is a hollow rectangular structure, these shell 8 usefulness stainless steels or quartz material are made;
One graphite base support 10, this graphite base support 10 is positioned at the bottom of shell 8;
One graphite heater 9, this graphite heater 9 is a body structure, this graphite heater 9 is positioned at the top of graphite base support 10;
One lagging material 12, this lagging material 12 be centered around graphite heater 9 around;
One loam cake 7, this loam cake 7 is positioned at the top of shell 8;
One induction coil 4, this induction coil 4 is spirally wound on the periphery of shell 8, and the heating work temperature range of this induction coil 4 is 400 ℃-1300 ℃.；
Side at shell 8 is separately installed with three tunnel gas inletes 20, and wherein three tunnel gas inletes 20 comprise: high pure nitrogen inlet 1, high-purity hydrogen inlet 2 and high-purity HCI gas inlet 3;
Opposite side at shell 8 is equipped with an exhaust port 6;
The bottom that one temperature-control heat couple 5, this temperature-control heat couple 5 are positioned at shell 8 is connected with graphite base support 10.
This device is placed in the glove box of MOCVD equipment.
See also shown in Figure 2ly, Fig. 2 is the second embodiment of the present invention, and a kind of graphite washing unit of the present invention is characterized in that, comprising:
One shell 8, this shell 8 is a hollow rectangular structure, these shell 8 usefulness stainless steels or quartz material are made;
One graphite base support 10, this graphite base support 10 is positioned at the bottom of shell 8;
One graphite heater 9, this graphite heater 9 is a body structure, this graphite heater 9 is positioned at the top of graphite base support 10;
One lagging material 12, this lagging material 12 be centered around graphite heater 9 around;
One loam cake 7, this loam cake 7 is positioned at the top of shell 8;
One powered electrode 13, the graphite heater 9 in this powered electrode 13 and the shell 8 is connected, and the heating work temperature range of this powered electrode 13 is 400 ℃-2800 ℃;
Side at shell 8 is separately installed with three tunnel gas inletes 20, and this three tunnel gas inlet 20 comprises: high pure nitrogen inlet 1, high-purity hydrogen inlet 2 and high-purity HCI gas inlet 3;
Opposite side at shell 8 is equipped with one road exhaust port 6;
The bottom that one temperature-control heat couple 5, this temperature-control heat couple 5 are positioned at shell 8 is connected with graphite base support 10.
This device is placed in the glove box of MOCVD equipment.
Please consult Fig. 1 and Fig. 2 again, the structure of the first embodiment of the present invention and second embodiment is all basic identical, difference only is, what first embodiment adopted is high-frequency induction coil 4, this high-frequency induction coil 4 is spirally wrapped around the type of heating of the periphery of shell 8, and the second embodiment of the present invention is to adopt the type of heating of the quartzy apparatus for baking of ratio-frequency heating mode.
Wherein first embodiment adopts high-frequency induction coil 4, is spirally wrapped around in the periphery of shell 8, gives graphite heater 9 heating by high-frequency induction.The graphite 11 that is cleaned be placed on graphite heater 9 above.Introduced in detail above other the principle of work, here just no longer explanation.
Wherein second embodiment is the quartzy apparatus for baking that adopts the resistance wire type of heating, and wherein powered electrode 3 is to the graphite heater energising, and well heater heats up.The graphite 11 that is cleaned is placed on the inside of well heater 9.Storing temperature and other operation are all identical with Fig. 1 with principle of work.
This device placement location is in the glove box of MOCVD equipment.The operating process that picks and places graphite is finished in glove box, can avoid graphite base to be polluted in the process that shifts like this.In the process of operation, glove box and washing unit are all taken out the operation of filling high-purity argon gas (or nitrogen), guarantee to be full of argon gas (or nitrogen) in glove box and the washing unit, to guarantee the cleaning of graphite base in the operating process.
Three tunnel gas inletes 20 of this device are positioned at a side of washing unit, comprise high-purity hydrogen inlet 2, high pure nitrogen inlet 1 and high-purity HCI gas inlet 3.Each road gas is by the mass flowmeter dominant discharge, and gas flow is adjustable continuously, has the gas of a corrosion resistant off-gas pump in will installing to be found time by the exhaust port 6 of washing unit opposite side in addition.When graphite is carried out heated wash, by high-purity HCI gas inlet 3 and/be that high-purity hydrogen inlet 2 feeds high-purity hydrogenchloride and/or high-purity hydrogen as reactant gases, these gases and the settling generation chemical reaction that is cleaned graphite 11 have been accelerated cleaning speed.Regulate atmosphere in the washing unit by the flow of regulating high-purity hydrogen and high-purity hydrogen chloride gas.
Picking and placeing the operating process that is cleaned graphite 11 in washing unit is to finish in the glove box that is filled with nitrogen, argon gas or other rare gas elementes.Shell 8 can be by high temperature material: stainless steel or quartz material are made, and have a loam cake 7 to open above washing unit shell 8, conveniently pick and place graphite.
The type of heating of this washing unit can adopt high-frequency induction heating, the heating of graphite resistance silk or other type of heating.Fig. 1 adopts high-frequency induction heating exactly, induction coil 4 is spirally wrapped around the periphery of shell 8, by high-frequency induction the graphite heater 9 that is positioned on the graphite base support 10 is heated, what Fig. 2 adopted is the heated by electrodes mode, two powered electrodes 13 are arranged directly to graphite heater 9 heating, the temperature of the two type of heating all is to be read by the temperature-control heat couple of inserting in the graphite heater 95, and the other end of temperature-control heat couple 5 can be connected with temperature controller in the outside of washing unit.Between temperature-control heat couple 5 and the shell 8 by magnetic current sealing.Require to adopt different type of heating according to actual temp, operating temperature range can accurately be regulated between 400 ℃-2800 ℃, temperature-controlled precision≤± 3 ℃.General induction heating temperature can be adjustable between 400 ℃-1300 ℃, and the heated by electrodes temperature can be adjustable between 400 ℃-2800 ℃.In order to reduce the loss of heat, surround with lagging material 12 around the graphite heater 9 in addition.
During with MOCVD equipment growth III group-III nitride and associated materials thereof, after repeatedly growing, sedimentary reactive deposition thing acquires a certain degree on the graphite 11, when needing to clean, at first close organic source, each road, as metal Ga source, metal In source, metal A l source, metal M g sources etc. are given in the reaction chamber and are fed high-purity argon gas (or nitrogen), feed high-purity argon gas (or nitrogen) simultaneously in washing unit, to be cleaned graphite 11 this moment and take out, transfer in the glove box.Open loam cake 7, will be cleaned on the graphite heater 9 that graphite is placed on washing unit, close loam cake 7 by glove box operation.Feed high-purity hydrogen chloride gas (or hydrogen etc.) to washing unit this moment, simultaneously graphite heater 9 heated up, and reaches set(ting)value (400 ℃-2800 ℃) until temperature, carries out the timing baking processing to being cleaned graphite 11.In baking, to keep constant pressure (high-purity HCI gas inlet 3 is arranged gas or high-purity hydrogen inlet 2 enters, and bled from exhaust port 6 by corrosion resistant off-gas pump, makes the pressure in the washing unit keep constant) in the washing unit
Through one period scheduled time, be cleaned graphite 11 baking processing and finish.Close high-purity hydrogen chloride gas (or hydrogen) this moment, with off-gas pump the gas in the washing unit found time by exhaust port 6, feeds high pure nitrogen by high pure nitrogen inlet 1 then.Open loam cake 7, in glove box, will be cleaned graphite 11 and take out, cover loam cake 7.Graphite 11 after cleaning is shifted back reaction chamber.Like this, just graphite base has been carried out baking processing one time.Can carry out the growth of material next time again.
Because graphite cleans in washing unit, reaction chamber is not caused any pollution, thereby guaranteed the cleaning of reaction chamber.
Use this baking vessel graphite to be carried out in the operating process of baking processing:
At first close organic source, each road, feed high-purity argon gas (or nitrogen) in reaction chamber, feed high-purity argon gas (or nitrogen) by high pure nitrogen inlet 1 in washing unit simultaneously, flow is 1000-2000sccm.
To be cleaned graphite 11 and from reaction chamber, take out, transfer in the glove box.Loam cake 7 is opened, will be cleaned on the graphite heater 9 that graphite 11 is positioned over washing unit, cover loam cake 7 by glove box operation.
With corrosion resistant pump the gas in the washing unit is pumped by exhaust port 6, in washing unit, feed high-purity hydrogenchloride (or hydrogen) by high-purity HCI gas inlet 3 (or high-purity hydrogen inlet 2), after reaching the pressure that sets in the device to be cleaned, graphite heater 9 is heated, read temperature by temperature-control heat couple 5, it is temperature required to reach cleaning until temperature, and temperature range is 400 ℃-2800 ℃, and graphite 11 is toasted.
Through 10-20min, graphite 11 bakings finish.Close high-purity hydrogen chloride gas (or hydrogen) this moment, stops heating, and graphite is lowered the temperature.With pump the gas in the washing unit is found time by exhaust port 6, in washing unit, charge into high-purity argon gas (or nitrogen) by high pure nitrogen inlet 1, after treating that temperature drops to room temperature, open loam cake 7, in glove box, from washing unit, take out and be cleaned graphite 11, cover loam cake 7, and will be cleaned graphite 11 and shift back reaction chamber.Like this, just graphite base has been carried out baking processing one time.
Claims (10)
1, a kind of graphite washing unit is characterized in that, comprising:
One shell, this shell are a hollow rectangular structure;
One graphite base support, this graphite base support is positioned at the bottom of shell;
One graphite heater, this graphite heater are a body structure, and this graphite heater is positioned at the top of graphite base support;
One lagging material, this lagging material be centered around graphite heater around;
One loam cake, this loam cake is positioned at the top of shell;
One induction coil, this induction coil is spirally wound on the periphery of shell;
Side at shell is separately installed with three tunnel gas inletes;
Opposite side at shell is equipped with an exhaust port;
The bottom that one temperature-control heat couple, this temperature-control heat couple are positioned at shell is connected with the graphite base support.
2, graphite washing unit according to claim 1 is characterized in that, wherein three tunnel gas inletes comprise: high pure nitrogen inlet, high-purity hydrogen inlet and high-purity HCI gas inlet.
3, graphite washing unit according to claim 1 is characterized in that, wherein this device is placed in the glove box of MOCVD equipment.
4, graphite washing unit according to claim 1 is characterized in that, wherein this shell is made with stainless steel or quartz material.
5, graphite washing unit according to claim 1 is characterized in that, wherein the heating work temperature range of this induction coil is 400 ℃-1300 ℃.
6, a kind of graphite washing unit is characterized in that, comprising:
One shell, this shell are a hollow rectangular structure;
One graphite base support, this graphite base support is positioned at the bottom of shell;
One graphite heater, this graphite heater are a body structure, and this graphite heater is positioned at the top of graphite base support;
One lagging material, this lagging material be centered around graphite heater around;
One loam cake, this loam cake is positioned at the top of shell;
Graphite heater in one powered electrode, this powered electrode and shell is connected;
Side at shell is separately installed with three tunnel gas inletes;
Opposite side at shell is equipped with one road exhaust port;
The bottom that one temperature-control heat couple, this temperature-control heat couple are positioned at shell is connected with the graphite base support.
7, graphite washing unit according to claim 6 is characterized in that, wherein three tunnel gas inletes comprise: high pure nitrogen inlet, high-purity hydrogen inlet and high-purity HCI gas inlet.
8, graphite washing unit according to claim 6 is characterized in that, wherein this shell is made with stainless steel or quartz material.
9, graphite washing unit according to claim 6 is characterized in that, wherein the heating work temperature range of this powered electrode is 400 ℃-2800 ℃.
10, graphite washing unit according to claim 6 is characterized in that, wherein this device is placed in the glove box of MOCVD equipment
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100649741A CN100491588C (en) | 2006-03-20 | 2006-03-20 | Graphite washing unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100649741A CN100491588C (en) | 2006-03-20 | 2006-03-20 | Graphite washing unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101041892A true CN101041892A (en) | 2007-09-26 |
| CN100491588C CN100491588C (en) | 2009-05-27 |
Family
ID=38807681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100649741A Expired - Fee Related CN100491588C (en) | 2006-03-20 | 2006-03-20 | Graphite washing unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100491588C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN103060769A (en) * | 2013-01-29 | 2013-04-24 | 杭州士兰明芯科技有限公司 | Etching and baking equipment and operation method thereof |
| CN103074600A (en) * | 2013-01-29 | 2013-05-01 | 杭州士兰明芯科技有限公司 | Etching roasting equipment |
| CN105834171A (en) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | Method for corrosion cleaning of graphite tray by using MOCVD equipment |
| CN106086817A (en) * | 2016-08-05 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | A kind of graphite carrier apparatus for baking |
| CN111618044A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | Cleaning method and cleaning device for laser graphite tray |
| CN116332173A (en) * | 2023-05-29 | 2023-06-27 | 江苏金亚隆科技有限公司 | High-temperature purification method of graphite product |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3433392B2 (en) * | 1999-01-12 | 2003-08-04 | セントラル硝子株式会社 | Cleaning gas and cleaning method for vacuum processing apparatus |
| US6596123B1 (en) * | 2000-01-28 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for cleaning a semiconductor wafer processing system |
| DE60120278T8 (en) * | 2000-06-21 | 2007-09-06 | Tokyo Electron Ltd. | Heat treatment plant and method for its purification |
-
2006
- 2006-03-20 CN CNB2006100649741A patent/CN100491588C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN103060769A (en) * | 2013-01-29 | 2013-04-24 | 杭州士兰明芯科技有限公司 | Etching and baking equipment and operation method thereof |
| CN103074600A (en) * | 2013-01-29 | 2013-05-01 | 杭州士兰明芯科技有限公司 | Etching roasting equipment |
| CN103060769B (en) * | 2013-01-29 | 2016-03-16 | 杭州士兰明芯科技有限公司 | Etching roasting plant and working method thereof |
| CN105834171A (en) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | Method for corrosion cleaning of graphite tray by using MOCVD equipment |
| CN106086817A (en) * | 2016-08-05 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | A kind of graphite carrier apparatus for baking |
| CN111618044A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | Cleaning method and cleaning device for laser graphite tray |
| CN116332173A (en) * | 2023-05-29 | 2023-06-27 | 江苏金亚隆科技有限公司 | High-temperature purification method of graphite product |
| CN116332173B (en) * | 2023-05-29 | 2023-08-22 | 江苏金亚隆科技有限公司 | High-temperature purification method of graphite product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100491588C (en) | 2009-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101041892A (en) | Graphite washing unit | |
| CN1129956C (en) | Growth method of III-IV nitride semiconductors and gas phase growth apparatus | |
| CN1278386C (en) | Heat treating apparatus and heat-treating method | |
| CN1230379C (en) | Method of mfg. silicon | |
| KR101481806B1 (en) | cleaning apparatus and method, and film growth reaction apparatus and method | |
| CN1823404A (en) | Process for producing semiconductor device and substrate treating apparatus | |
| CN2573509Y (en) | Heat treatment device | |
| CN101048852A (en) | Substrate carrier for parallel wafer processing reactor | |
| CN1842899A (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
| CN1664179A (en) | Method of manufacturing group-III nitride crystal | |
| CN1898409A (en) | Method and apparatus for forming a high quality low temperature silicon nitride layer | |
| CN1943019A (en) | Substrate processing equipment and semiconductor device manufacturing method | |
| CN1661433A (en) | Processing apparatus and method for removing particles therefrom | |
| CN1763915A (en) | Method of cleaning thin film deposition system, thin film deposition system and program | |
| KR20130138232A (en) | Mechanically fluidized reactor systems and methods, suitable for production of silicon | |
| JP2003151737A (en) | Heater | |
| WO2019153585A1 (en) | Vacuum reaction device and reaction method | |
| US20120003141A1 (en) | Process and apparatuses for preparing ultrapure silicon | |
| CN109804110A (en) | For laying the device and method of carbon-coating | |
| CN1842894A (en) | Method of depositing thin film on wafer | |
| CN105714380A (en) | Silicon carbide epitaxial growth device and method | |
| CN108070842B (en) | Method for growing single crystal diamond by using MPCVD method based on hair as carbon source | |
| CN1270358C (en) | Oxide film forming method | |
| CN108411362B (en) | Chamber and epitaxial growth equipment | |
| KR20110020778A (en) | Method for producing polycrystalline silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090527 Termination date: 20130320 |