CN103074600A - Etching roasting equipment - Google Patents
Etching roasting equipment Download PDFInfo
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- CN103074600A CN103074600A CN2013100378275A CN201310037827A CN103074600A CN 103074600 A CN103074600 A CN 103074600A CN 2013100378275 A CN2013100378275 A CN 2013100378275A CN 201310037827 A CN201310037827 A CN 201310037827A CN 103074600 A CN103074600 A CN 103074600A
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Abstract
The invention provides etching roasting equipment which comprises a reaction chamber assembly, a heating assembly, and an equipment platform, wherein the reaction chamber assembly forms a reaction chamber for containing graphite discs; the heating assembly is arranged at the periphery of the reaction chamber assembly; the reaction chamber assembly and the heating assembly are supported by the equipment platform; the reaction chamber assembly particularly comprises a reaction hood, a reaction hood fixing seat, and a bottom cover; a vent pipe is arranged on the top side of the reaction hood; the bottom side of the reaction hood is opened; the reaction hood fixing seat fixedly supports the reaction hood; and the bottom cover is provided with a tail gas channel communicated with the reaction chamber, and is in sealing connection with the fixing seat. With the adoption of the reaction chamber structure, all-around requirements of the etching roasting equipment on the reaction chamber can be met.
Description
Technical field
The present invention relates to a kind of etching roasting plant, this etching roasting plant is generally chlorine etching roasting plant, and it has reaction chamber assembly, and graphite plate or epitaxial substrate sheet can carry out etching and baking in reaction chamber assembly.
Background technology
Metal organic chemical vapor deposition equipment (being called for short MOCVD) carries out the electroless plating reaction in the pyrolysis mode at substrate, the thin layer monocrystal material of various III-V family, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution of growing, graphite plate is as the carrying platform of substrate, having unnecessary chemical reaction residue in this reaction process is deposited on the graphite plate surface, if do not removed, will inevitably in a new stove epitaxial wafer process of growth, affect corresponding temperature control, surface particles etc., and finally have influence on the yield rate of epitaxial wafer growth.The common mode that adopts long-time high bake of graphite plate cleaning method that existing market provides and uses in the industry, exist the time of single heat baking long, storing temperature is too high to affect the problems such as life-span that graphite plate recycles, and can't carry out etching to the epitaxial substrate sheet of scrapping that produces in the technique process of growth simultaneously.
Also not do not carry out in the market the specific equipment of etching, cleaning for MOCVD and epitaxial wafer, the graphite plate cleaning method that uses in the industry at present adopts vacuum sintering furnace to carry out the mode of long-time high bake usually, the time long (single heat approximately 14 hours) that has single heat baking, storing temperature too high (top temperature is 1400 degree approximately) affects the problems such as life-span that graphite plate recycles, and can't carry out etching to the epitaxial substrate sheet of scrapping that produces in the technique process of growth simultaneously.Such equipment volume is larger in addition, takies larger installation and usage space in the cleaning shop.This equipment is to use the mode of high temperature sintering gan residue physical property dust formation in the principle of work of baking graphite plate, can produce a large amount of dust after the operation, can remain in the Reaktionsofen in a large number simultaneously, so such equipment claimed is often safeguarded and cleaning.Can adopt the means that in heating, pass into nitrogen, chlorine or chloride gas to clean graphite plate or epitaxial wafer carries out.This has certain particular requirement to reaction chamber structure and the corresponding pathway structure that roasting plant holds graphite plate, and it comprises the many aspects such as materials'use, stopping property, light transmission, reactant gases model, cavity indoor pressure.Present existing etching roasting plant is difficult to make everyway to meet the requirements.
Summary of the invention
In order to satisfy the etching roasting plant for the omnibearing requirement of reaction chamber, the invention provides a kind of etching roasting plant, this etching roasting plant comprises: reaction chamber assembly, reaction chamber assembly are configured for holding the reaction chamber of graphite plate or epitaxial substrate sheet; Heating component, heating component are arranged on the periphery of reaction chamber assembly; And equipment platform, reaction chamber assembly and heating component are by this equipment platform supporting.Reaction chamber assembly comprises especially: reaction hood, and the top of this reaction hood is provided with ventpipe, and the bottom side of this reaction hood is opened wide; The reaction hood permanent seat, this reaction hood permanent seat fixed support reaction hood; And bottom, this bottom is provided with at least one exhaust gas channel that is communicated with reaction chamber, and bottom is sealably coupled on the permanent seat.When etching epitaxial substrate sheet, can place epitaxial substrate sheet correspondence in the film trap that is adsorbed on the graphite plate.
According to an aspect of the present invention, reaction hood is connected on the reaction hood permanent seat hermetically.Preferably, the lower end of reaction hood is provided with flange part, and reaction hood is fixed to reaction hood on the reaction hood permanent seat by trim ring engages male edge.Preferably, be provided with sealing member in the junction surface of flange part and trim ring, with being tightly connected of realization response cover and reaction hood permanent seat.
According to another aspect of the present invention, the reaction hood permanent seat have face the top the first mating surface and the second mating surface of faced downwards, the end face of the lower end of opening wide of the first mating surface and reaction hood is combined together, the second matching surface cooperates with bottom, is provided with sealing member between the second matching surface and the bottom.Preferably, the second mating surface is formed with stage portion, and stage portion is divided into two parts with the second mating surface, and wherein the part of the second mating surface cooperates with the equipment table top, and another part of the second mating surface cooperates with bottom.
According to a further aspect of the invention, reaction hood permanent seat inside is provided with water cavity, and water cavity is provided with the outlet of water cavity entrance and water cavity, and water coolant passes into and from water cavity outlet pass-out from the water cavity entrance, thereby at the water cavity internal recycle.
According to a further aspect of the invention, the downside of equipment platform is fixed with a plurality of rotation clamping cylinders, and bottom is fastened to the equipment platform below by a plurality of rotation clamping cylinders,
According to a further aspect of the invention, the outlet of exhaust gas channel is provided with check valve.
According to a further aspect of the invention, bottom is provided with a pressure detection mouth, in order to the chamber pressure in the internal space of detection reaction chamber component.
According to a further aspect of the invention, the etching roasting plant comprises the baking tray frock, needs processed graphite plate to be erected on the baking tray frock, and the baking tray frock is supported by bottom.Such as need the extension substrate slice is carried out clean, the epitaxial substrate sheet can be placed on the graphite plate.Preferably, graphite plate is installed on the baking tray frock with vertical state.In addition, graphite plate preferably is 1 or 2.
According to a further aspect of the invention, siphunculus in the middle of the top of reaction hood also is provided with is used for inserting temperature thermocouple.
According to a further aspect of the invention, the top of reaction hood is provided with at least one deck port plate, and this port plate is provided with a plurality of through holes.Preferably, port plate has two-layer, and the lead to the hole site on the through hole on the port plate on upper strata and the port plate of lower floor staggers.
Preferably, bottom is sealably coupled on the reaction hood permanent seat.
In etching roasting plant according to the present invention, ventpipe is used for passing into reactant gases, and reactant gases can comprise one or more in chlorine or the chloride gas.
Adopt etching roasting plant of the present invention, the gas in the reaction chamber assembly can be precisely controlled, and the temperature in the reaction chamber of reaction chamber assembly can obtain evenly, accurate control, thereby satisfy in all directions the technical requirements of reaction chamber.
Description of drawings
Fig. 1 shows to comprise the according to an embodiment of the invention stereographic map of the etching roasting plant of reaction chamber, and its outer hull is removed, so that its internal structure to be shown;
Fig. 2 shows the according to an embodiment of the invention three-dimensional cutaway view of the reaction chamber assembly of etching roasting plant;
Fig. 3 shows the according to an embodiment of the invention schematic diagram of the top structure of reaction hood;
Fig. 4 shows the according to an embodiment of the invention sectional view of reaction chamber, wherein is placed with graphite plate; And
Fig. 5 shows the according to an embodiment of the invention stereographic map of the bottom cover plate structure of reaction chamber.
Embodiment
The invention will be further described below in conjunction with specific embodiments and the drawings; set forth in the following description more details so that fully understand the present invention; but the present invention obviously can implement with the multiple alternate manner that is different from this description; those skilled in the art can be in the situation that do similar popularization, deduction without prejudice to intension of the present invention according to practical situations, therefore should be with content constraints protection scope of the present invention of this specific embodiment.
Fig. 1 shows and comprises the according to an embodiment of the invention stereographic map of the etching roasting plant 10 of reaction chamber assembly 100, and the outer hull of equipment 10 is removed, so that its internal structure to be shown.Etching roasting plant 10 comprises the reaction chamber assembly 100 of the reaction chamber 150 that is formed for holding graphite plate 20 or epitaxial substrate sheet and is arranged on the heating component 200 of reaction chamber assembly 100 peripheries, consisted of thus the Reaktionsofen of etching roasting plant 10.Usually, the epitaxial substrate sheet is corresponding to be placed in the film trap that is adsorbed on the graphite plate 20, together be placed in the Reaktionsofen with graphite plate 20, but this is not restrictive, and the epitaxial substrate sheet also can be placed in the Reaktionsofen separately by the frock of special use.
Heating component 200 and reaction chamber assembly 100 support by equipment platform 500, and equipment platform 500 is parts of the bearing assembly of etching roasting plant 10.Heating component 200 comprises infrared lamp assembly 210, infrared lamp assembly 210 can comprise the first infrared lamp assembly section 212 and the second infrared lamp assembly section (not shown), they are separately positioned on the outside of the two opposite side surfaces of reaction chamber assembly 100, and namely reaction chamber assembly 100 is roughly between two infrared lamp assembly sections.Under the heat effect of infrared lamp assembly 210, the top temperature in the reaction chamber 150 can reach 800 degrees centigrade.The outside in two other opposite flank of reaction chamber assembly 100 does not arrange the infrared lamp assembly usually, but is provided with reflection plate assembly 300, is used for the heat that reflection is sent by the infrared lamp assembly.Like this, the heating component 200 that consists of of two infrared lamp assembly sections and two reflection plate assemblies 300 is wherein fenced with reaction chamber 150.
Fig. 2 shows the according to an embodiment of the invention three-dimensional cutaway view of the reaction chamber assembly 100 of etching roasting plant 10.Reaction chamber assembly 100 comprises: reaction hood 110, and the top of this reaction hood 110 is provided with ventpipe 111, and the bottom side of reaction hood 110 is opened wide; Reaction hood permanent seat 120, reaction hood permanent seat 120 fixed support reaction hood 110; And bottom 140, this bottom 140 is provided with at least one exhaust gas channel 141 that is communicated with reaction chamber 150, and bottom 140 is sealably coupled on the permanent seat 120.
Fig. 3 shows in detail the top side of reaction hood 110, and by being arranged on the ventpipe 111 of reaction hood 110 top sides, the required gas of reaction is transported in the reaction chamber 150 by ventpipe 111 such as nitrogen, chlorine or muriate.Preferably, the top of reaction hood 110 is provided with at least one deck, two-layer port plate 112 preferably, and port plate 112 is provided with some through holes 113, is used for making the gas dispense that passes into open to pass into equably in the reaction chamber 150.The setting position of through hole 113, size, quantity can design as required and decide.Preferably, when two-layer port plate 112 was arranged, the through hole 113 on the upper strata port plate 112 staggered with through hole 113 positions on lower floor's port plate 112.Reaction hood 110 is preferably made by quartz material, and the each several part of quartz reaction cover 110 can adopt the mode of welding to realize.Like this, when 10 work of etching roasting plant, as shown in Figure 2, chlorine or chloride gas enter by the ventpipe 111 at top, as shown by arrows, air-flow is with supreme and the lower graphite plate 20(graphite plate 20 that vertically is arranged on the baking tray frock 400 in the reaction chamber 150 of flowing through is generally two one group of settings), then, air-flow is pooled to bottom 140 places, at last from exhaust gas channel 141 outside pass-outs.
In addition, siphunculus 114 in the middle of illustrated reaction hood 110 tops also are provided with is used for temperature thermocouple is directly extend in the reaction chamber.
As shown in Figure 2, reaction hood permanent seat 120 is arranged on the equipment platform 500 in the etching roasting plant 10, is used for fixed support reaction hood 110.Airtight for guaranteeing reaction chamber, reaction hood 110 should be sealably coupled on the reaction hood permanent seat 120.As a kind of embodiment, the lower end of reaction hood 110 is provided with flange part 115, reaction hood 110 is fixed to reaction hood 110 on the reaction hood permanent seat 120 by the flange part 115 that trim ring 130 engages reaction hood 110 lower ends, is provided with sealing member 160 in the junction surface of flange part 115 and trim ring 130, such as O type circle.In addition, also sealing member can be set in the relative bonding section of the flange part 115 of reaction hood 110 and reaction hood permanent seat 120.Reaction hood trim ring 130 and reaction hood permanent seat 120 can be selected stainless steel, and wherein the outside surface of trim ring 130 can be provided with the metallic coating for reflecting heat, for example gold.The end face that reaction hood permanent seat 120 has the first mating surface 122, the first mating surfaces 122 of facing the top and the lower end of opening wide of reaction hood 110 is combined together.Reaction hood permanent seat 120 has the second mating surface 123 of faced downwards.According to preferred embodiment of the present invention, the second mating surface 123 is formed with stage portion, stage portion is divided into two parts with the second mating surface 123, and wherein the part of the second mating surface 123 cooperates with equipment platform 500, and another part of the second mating surface 123 cooperates with bottom 140.As shown in the figure, being provided with sealing member 170 between bottom 140 and the second mating surface 123, such as O type circle, preferably is two O type circles that arrange with one heart, so that bottom 140 is sealed and matched together with permanent seat, in case gas or heat in the reaction chamber leak.
In addition, in order to prevent that the sealing member between bottom 140 and the second mating surface 123 is subject to temperatures involved, preferably, be provided with water cavity 125 in permanent seat inside, water cavity 125 is provided with entrance 126 and outlet 127, and entrance 126 and outlet 127 all can be arranged at the below of equipment platform 500, as can be seen from Fig. 5, thereby the refrigerant such as water coolant is exported at water cavity 125 internal recycle from exporting 127 again from entrance 126 inputs, thereby the O type is enclosed cooling effect.
Below, in conjunction with Fig. 1 and Fig. 5 the structure of the bottom 140 of reaction chamber assembly 100 is illustrated.According to a preferred embodiment of the present invention, bottom 140 comprises at least one exhaust gas channel 141, is used for making the gas of reaction chamber 150 to flow out reaction chamber 150.The entrance of exhaust gas channel 141 is arranged on the mid-way of bottom 140 part corresponding with the bottom side of opening wide of reaction hood 110 usually.The outlet of exhaust gas channel 141 is provided with a check valve 180, to be discharged in the corresponding plant area waste gas system (not shown).In the present embodiment, check valve 180 is installed on the equipment platform 500, and exhaust gas channel 141 is connected to this check valve 180.
In addition, as shown in Figure 5, bottom 140 is provided with a pressure detection mouth 146, in order to the chamber pressure in the internal space of detection reaction chamber component 100, normally move with assurance equipment, particularly when using quartz reaction cover 110, in case reaction hood 110 is because the cover inside and outside differential pressure is excessive and cracked.
The below of bottom 140 preferably is connected with screw rod movement mechanism, in the situation that satisfy reaction chamber assembly 100 needs of beginning to speak, bottom 140 moves downward the predetermined position by screw rod movement mechanism after reaction is complete.Shown in Figure 1, the baking tray frock 400(baking tray carriage of graphite plate 20 is installed) by bottom 140 supportings.When bottom 140 moved downward by screw rod movement mechanism, baking tray frock 400 was together with being installed in graphite plate 20 on the baking tray frock 400 along with bottom 140 moves downward, to take out graphite plate 20.Otherwise, when needs carry out the bake process of graphite plate 20, baking tray frock 400 is placed on the bottom 140 together with the graphite plate 20 that is installed on the baking tray frock 400, move upward by screw rod movement mechanism and to promote graphite plate 20, after bottom 140 touches the equipment table top, rotation clamping cylinder 190 and claw 195 are tightened, claw 195 is pressed on the auxiliary briquetting 142, thereby make bottom 140 be sealingly joined to equipment table top downside, make reaction chamber 150 closures, meanwhile check valve 180 is backed down, and can input subsequently the gas roasting plant and begin operation.During such as need etching epitaxial substrate sheet, need to place epitaxial substrate sheet correspondence in the film trap that is adsorbed on the graphite plate, other operations are identical with the enforcement action.
Thus, the invention provides a kind of etching roasting plant of new special use, this equipment is to utilize chlorine or gas chlorination thing, under the condition of certain temperature (in etching top temperature 800 degree), graphite plate or epitaxial substrate sheet are carried out etching reaction, and finally reach the graphite plate surface is carried out effective cleaning and the bad epitaxial film on extension substrate slice surface carried out the function of effective etching, cleaning.This chlorine etching apparatus list heat time is shorter, can be controlled at 3 hours and finish with interior; Simultaneously smaller because of equipment size and profile, reasonably saved the installation corresponding in the cleaning shop and usage space.This chlorine etching roasting plant is to decompose the gan residue by the mode of the chemical reaction under the certain temperature condition, postrun product dust granules is few, can in time discharge in the Reaktionsofen by the exhaust emissions structure simultaneously, so can guarantee many heats reruns, reduce the frequency of maintenance of the equipment and cleaning, the equipment of assurance has higher service efficiency.
Although the present invention with preferred embodiment openly as above, it is not to limit the present invention, and any those skilled in the art can make possible change and modification without departing from the spirit and scope of the present invention.Therefore, every content that does not break away from technical solution of the present invention, any modification that foundation technical spirit of the present invention is done above embodiment.
Claims (18)
1. an etching roasting plant (10), described etching roasting plant (10) comprising:
Reaction chamber assembly (100), described reaction chamber assembly (100) are formed for holding the reaction chamber (150) of graphite plate (20) or epitaxial substrate sheet,
Heating component (200), described heating component (200) is arranged on the periphery of described reaction chamber assembly (100); And
Equipment platform (500), described reaction chamber assembly (100) and described heating component (200) are supported by this equipment platform (500);
It is characterized in that, described reaction chamber assembly (100) comprising:
Reaction hood (110), the top of described reaction hood (110) is provided with ventpipe (111), and the bottom side of described reaction hood (110) is opened wide;
Reaction hood permanent seat (120), the described reaction hood of described reaction hood permanent seat (120) fixed support (110); And
Bottom (140), described bottom (140) are provided with at least one exhaust gas channel (141) that is communicated with described reaction chamber (150).
2. etching roasting plant as claimed in claim 1 (10) is characterized in that, described reaction hood (110) is sealably coupled on the described reaction hood permanent seat (120).
3. etching roasting plant as claimed in claim 2 (10), it is characterized in that, the lower end of described reaction hood (110) is provided with flange part (115), described reaction hood (110) engages described flange part (115) by trim ring (130) and described reaction hood (110) is fixed on the described reaction hood permanent seat (120), be provided with sealing member in the junction surface of described flange part (115) and trim ring (130), to realize being tightly connected of described reaction hood (110) and described reaction hood permanent seat (120).
4. etching roasting plant as claimed in claim 1 (10), it is characterized in that, described reaction hood permanent seat (120) have face the top the first mating surface (122) and second mating surface (123) of faced downwards, described the first mating surface (122) is combined together with the end face of the lower end of opening wide of reaction hood (110), described the second matching surface cooperates with bottom (140), is provided with sealing member between described the second matching surface and the bottom (140).
5. etching roasting plant as claimed in claim 4 (10), it is characterized in that, the second mating surface (123) is formed with stage portion, stage portion is divided into two parts with the second mating surface (123), wherein the part of the second mating surface (123) cooperates with the equipment table top, and another part of the second mating surface (123) cooperates with bottom (140).
6. etching roasting plant as claimed in claim 1 (10), it is characterized in that, described reaction hood permanent seat (120) inside is provided with water cavity (125), water cavity (125) is provided with water cavity entrance (126) and water cavity outlet (127), refrigerant passes into and from described water cavity outlet pass-out from described water cavity entrance, thereby at described water cavity (125) internal recycle.
7. etching roasting plant as claimed in claim 1 (10), it is characterized in that, the downside of described equipment platform is fixed with a plurality of rotation clamping cylinders (190), and described bottom (140) is fastened to described equipment platform below by a plurality of described rotation clamping cylinders (190).
8. etching roasting plant as claimed in claim 1 (10) is characterized in that, the outlet of described exhaust gas channel (141) is provided with check valve (180).
9. etching roasting plant as claimed in claim 1 (10) is characterized in that, described bottom (140) is provided with a pressure detection mouth (146), in order to the chamber pressure in the internal space of detection reaction chamber component (100).
10. etching roasting plant as claimed in claim 1 (10), it is characterized in that, described etching roasting plant (10) comprises baking tray frock (400), need processed graphite plate (20) to be erected on the baking tray frock (400), described baking tray frock (400) is supported by described bottom (140).
11. etching roasting plant as claimed in claim 10 (10) is characterized in that, described graphite plate is placed with the epitaxial substrate sheet on (20).
12. such as claim 10 or 11 described etching roasting plants (10), it is characterized in that, described graphite plate (20) is installed on the baking tray frock (400) with vertical state.
13. such as claim 10 or 11 described etching roasting plants (10), it is characterized in that, described graphite plate is 1 or 2.
14. etching roasting plant as claimed in claim 1 (10) is characterized in that, siphunculus (114) in the middle of the top of described reaction hood (110) also is provided with is used for inserting temperature thermocouple.
15. etching roasting plant as claimed in claim 1 (10) is characterized in that, the top of described reaction hood is provided with at least one deck port plate (112), and port plate (112) is provided with a plurality of through holes (113).
16. etching roasting plant as claimed in claim 15 (10), it is characterized in that, described port plate (112) has two-layer, and the described through hole (113) on the described port plate (112) on upper strata staggers with described through hole (113) position on the described port plate (112) of lower floor.
17. etching roasting plant as claimed in claim 1 (10) is characterized in that, described bottom (140) is sealably coupled on the described reaction hood permanent seat (120).
18. etching roasting plant as claimed in claim 1 (10) is characterized in that, described ventpipe (111) is used for passing into reactant gases, and described reactant gases comprises one or more in chlorine and the chloride gas.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310037827.5A CN103074600B (en) | 2013-01-29 | 2013-01-29 | Etching roasting plant |
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| CN201310037827.5A CN103074600B (en) | 2013-01-29 | 2013-01-29 | Etching roasting plant |
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| CN103074600A true CN103074600A (en) | 2013-05-01 |
| CN103074600B CN103074600B (en) | 2015-08-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925793A (en) * | 2015-06-11 | 2015-09-23 | 湘能华磊光电股份有限公司 | Method for removing GaN-based compounds on surface of graphite disc |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227435A (en) * | 2006-02-21 | 2007-09-06 | Taiyo Nippon Sanso Corp | Method of cleaning semiconductor manufacturing apparatus, cleaning apparatus, and semiconductor manufacturing apparatus |
| CN101041892A (en) * | 2006-03-20 | 2007-09-26 | 中国科学院半导体研究所 | Graphite washing unit |
| CN101092278A (en) * | 2006-06-23 | 2007-12-26 | 东京毅力科创株式会社 | Quartz products and heat treatment apparatus |
| CN102174690A (en) * | 2011-01-13 | 2011-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | MOCVD (metal-organic chemical vapor deposition) graphite disc cleaning device |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
-
2013
- 2013-01-29 CN CN201310037827.5A patent/CN103074600B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227435A (en) * | 2006-02-21 | 2007-09-06 | Taiyo Nippon Sanso Corp | Method of cleaning semiconductor manufacturing apparatus, cleaning apparatus, and semiconductor manufacturing apparatus |
| CN101041892A (en) * | 2006-03-20 | 2007-09-26 | 中国科学院半导体研究所 | Graphite washing unit |
| CN101092278A (en) * | 2006-06-23 | 2007-12-26 | 东京毅力科创株式会社 | Quartz products and heat treatment apparatus |
| CN102174690A (en) * | 2011-01-13 | 2011-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | MOCVD (metal-organic chemical vapor deposition) graphite disc cleaning device |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925793A (en) * | 2015-06-11 | 2015-09-23 | 湘能华磊光电股份有限公司 | Method for removing GaN-based compounds on surface of graphite disc |
| CN104925793B (en) * | 2015-06-11 | 2017-03-01 | 湘能华磊光电股份有限公司 | A kind of method removing graphite surface gan-based compound |
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| CN103074600B (en) | 2015-08-12 |
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