JP3364488B1 - 反応容器のクリーニング方法及び成膜装置 - Google Patents

反応容器のクリーニング方法及び成膜装置

Info

Publication number
JP3364488B1
JP3364488B1 JP2001204674A JP2001204674A JP3364488B1 JP 3364488 B1 JP3364488 B1 JP 3364488B1 JP 2001204674 A JP2001204674 A JP 2001204674A JP 2001204674 A JP2001204674 A JP 2001204674A JP 3364488 B1 JP3364488 B1 JP 3364488B1
Authority
JP
Japan
Prior art keywords
film
reaction vessel
ruthenium
cleaning
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001204674A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003013232A (ja
Inventor
一秀 長谷部
大輔 野津
東均 崔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001204674A priority Critical patent/JP3364488B1/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020047000022A priority patent/KR100861817B1/ko
Priority to DE60236296T priority patent/DE60236296D1/de
Priority to PCT/JP2002/002200 priority patent/WO2003004722A1/ja
Priority to EP02702843A priority patent/EP1422316B1/en
Priority to US10/480,488 priority patent/US7546840B2/en
Priority to TW091104572A priority patent/TWI250571B/zh
Application granted granted Critical
Publication of JP3364488B1 publication Critical patent/JP3364488B1/ja
Publication of JP2003013232A publication Critical patent/JP2003013232A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Semiconductor Memories (AREA)
JP2001204674A 2001-07-05 2001-07-05 反応容器のクリーニング方法及び成膜装置 Expired - Fee Related JP3364488B1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001204674A JP3364488B1 (ja) 2001-07-05 2001-07-05 反応容器のクリーニング方法及び成膜装置
DE60236296T DE60236296D1 (enExample) 2001-07-05 2002-03-08
PCT/JP2002/002200 WO2003004722A1 (en) 2001-07-05 2002-03-08 Method for cleaning reaction container and film deposition system
EP02702843A EP1422316B1 (en) 2001-07-05 2002-03-08 Method for cleaning reaction container
KR1020047000022A KR100861817B1 (ko) 2001-07-05 2002-03-08 반응용기의 클리닝방법 및 성막장치
US10/480,488 US7546840B2 (en) 2001-07-05 2002-03-08 Method for cleaning reaction container and film deposition system
TW091104572A TWI250571B (en) 2001-07-05 2002-03-12 Method for cleaning reaction container and film deposition system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001204674A JP3364488B1 (ja) 2001-07-05 2001-07-05 反応容器のクリーニング方法及び成膜装置

Publications (2)

Publication Number Publication Date
JP3364488B1 true JP3364488B1 (ja) 2003-01-08
JP2003013232A JP2003013232A (ja) 2003-01-15

Family

ID=19041104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001204674A Expired - Fee Related JP3364488B1 (ja) 2001-07-05 2001-07-05 反応容器のクリーニング方法及び成膜装置

Country Status (7)

Country Link
US (1) US7546840B2 (enExample)
EP (1) EP1422316B1 (enExample)
JP (1) JP3364488B1 (enExample)
KR (1) KR100861817B1 (enExample)
DE (1) DE60236296D1 (enExample)
TW (1) TWI250571B (enExample)
WO (1) WO2003004722A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60329638D1 (de) * 2002-08-02 2009-11-19 Idemitsu Kosan Co Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
BRPI0914842A2 (pt) * 2008-06-16 2015-10-27 Jgc Corp método de operação de um reator catalizador de rutênio
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP2024503424A (ja) * 2021-01-19 2024-01-25 ラム リサーチ コーポレーション 金属エッチング残渣を有するチャンバの構成要素を洗浄する方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200782A (ja) 1998-10-26 2000-07-18 Hitachi Ltd 半導体製造装置のクリ―ニング方法
JP2000299289A (ja) 1999-01-12 2000-10-24 Central Glass Co Ltd クリーニングガス及び真空処理装置のクリーニング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
CN1054702C (zh) * 1995-06-26 2000-07-19 现代电子产业株式会社 制造半导体器件电容器的方法
US6003526A (en) * 1997-09-12 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd In-sit chamber cleaning method
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6143192A (en) * 1998-09-03 2000-11-07 Micron Technology, Inc. Ruthenium and ruthenium dioxide removal method and material
US6537461B1 (en) * 2000-04-24 2003-03-25 Hitachi, Ltd. Process for treating solid surface and substrate surface
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
JP2000265275A (ja) 1999-03-15 2000-09-26 Central Glass Co Ltd クリーニング方法
EP1167568B1 (en) * 2000-06-21 2006-06-07 Tokyo Electron Limited Heat treatment apparatus and cleaning method of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200782A (ja) 1998-10-26 2000-07-18 Hitachi Ltd 半導体製造装置のクリ―ニング方法
JP2000299289A (ja) 1999-01-12 2000-10-24 Central Glass Co Ltd クリーニングガス及び真空処理装置のクリーニング方法

Also Published As

Publication number Publication date
DE60236296D1 (enExample) 2010-06-17
JP2003013232A (ja) 2003-01-15
EP1422316A1 (en) 2004-05-26
TWI250571B (en) 2006-03-01
KR100861817B1 (ko) 2008-10-07
EP1422316B1 (en) 2010-05-05
EP1422316A9 (en) 2007-07-04
EP1422316A4 (en) 2005-07-27
KR20040030784A (ko) 2004-04-09
US20040144320A1 (en) 2004-07-29
US7546840B2 (en) 2009-06-16
WO2003004722A1 (en) 2003-01-16

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