KR100861817B1 - 반응용기의 클리닝방법 및 성막장치 - Google Patents

반응용기의 클리닝방법 및 성막장치 Download PDF

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Publication number
KR100861817B1
KR100861817B1 KR1020047000022A KR20047000022A KR100861817B1 KR 100861817 B1 KR100861817 B1 KR 100861817B1 KR 1020047000022 A KR1020047000022 A KR 1020047000022A KR 20047000022 A KR20047000022 A KR 20047000022A KR 100861817 B1 KR100861817 B1 KR 100861817B1
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KR
South Korea
Prior art keywords
reaction vessel
film
ruthenium
gas
cleaning
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Expired - Fee Related
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KR1020047000022A
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English (en)
Korean (ko)
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KR20040030784A (ko
Inventor
하세베가즈히데
노즈다이스케
최동균
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20040030784A publication Critical patent/KR20040030784A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Semiconductor Memories (AREA)
KR1020047000022A 2001-07-05 2002-03-08 반응용기의 클리닝방법 및 성막장치 Expired - Fee Related KR100861817B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001204674A JP3364488B1 (ja) 2001-07-05 2001-07-05 反応容器のクリーニング方法及び成膜装置
JPJP-P-2001-00204674 2001-07-05
PCT/JP2002/002200 WO2003004722A1 (en) 2001-07-05 2002-03-08 Method for cleaning reaction container and film deposition system

Publications (2)

Publication Number Publication Date
KR20040030784A KR20040030784A (ko) 2004-04-09
KR100861817B1 true KR100861817B1 (ko) 2008-10-07

Family

ID=19041104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047000022A Expired - Fee Related KR100861817B1 (ko) 2001-07-05 2002-03-08 반응용기의 클리닝방법 및 성막장치

Country Status (7)

Country Link
US (1) US7546840B2 (enExample)
EP (1) EP1422316B1 (enExample)
JP (1) JP3364488B1 (enExample)
KR (1) KR100861817B1 (enExample)
DE (1) DE60236296D1 (enExample)
TW (1) TWI250571B (enExample)
WO (1) WO2003004722A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026142149A1 (ko) * 2024-12-23 2026-07-02 주성엔지니어링(주) 챔버 세정 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1869277B (zh) * 2002-08-02 2010-09-29 出光兴产株式会社 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
JP5655306B2 (ja) * 2007-07-06 2015-01-21 住友金属鉱山株式会社 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材
AU2009261244B2 (en) * 2008-06-16 2012-08-23 Osaka Gas Co., Ltd. Method of operating ruthenium catalyst reactor
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP7802081B2 (ja) * 2021-01-19 2026-01-19 ラム リサーチ コーポレーション 金属エッチング残渣を有するチャンバの構成要素を洗浄する方法
DE112023002515T5 (de) * 2022-06-02 2025-06-18 Husqvarna Ab Hybrides Beschichtungsverfahren
TWI913689B (zh) 2024-03-20 2026-02-01 波光科技股份有限公司 用於膜成長製程的照光裝置以及膜成長製程設備

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200782A (ja) * 1998-10-26 2000-07-18 Hitachi Ltd 半導体製造装置のクリ―ニング方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP2802262B2 (ja) * 1995-06-26 1998-09-24 現代電子産業株式会社 半導体素子のキャパシター製造方法
US6003526A (en) * 1997-09-12 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd In-sit chamber cleaning method
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6143192A (en) * 1998-09-03 2000-11-07 Micron Technology, Inc. Ruthenium and ruthenium dioxide removal method and material
US6537461B1 (en) * 2000-04-24 2003-03-25 Hitachi, Ltd. Process for treating solid surface and substrate surface
JP3433392B2 (ja) * 1999-01-12 2003-08-04 セントラル硝子株式会社 クリーニングガス及び真空処理装置のクリーニング方法
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
JP2000265275A (ja) * 1999-03-15 2000-09-26 Central Glass Co Ltd クリーニング方法
DE60120278T8 (de) * 2000-06-21 2007-09-06 Tokyo Electron Ltd. Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200782A (ja) * 1998-10-26 2000-07-18 Hitachi Ltd 半導体製造装置のクリ―ニング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026142149A1 (ko) * 2024-12-23 2026-07-02 주성엔지니어링(주) 챔버 세정 방법

Also Published As

Publication number Publication date
DE60236296D1 (enExample) 2010-06-17
KR20040030784A (ko) 2004-04-09
JP3364488B1 (ja) 2003-01-08
EP1422316A4 (en) 2005-07-27
EP1422316B1 (en) 2010-05-05
TWI250571B (en) 2006-03-01
WO2003004722A1 (en) 2003-01-16
EP1422316A1 (en) 2004-05-26
JP2003013232A (ja) 2003-01-15
EP1422316A9 (en) 2007-07-04
US20040144320A1 (en) 2004-07-29
US7546840B2 (en) 2009-06-16

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