JP3328645B2 - シリコン窒化膜の形成方法 - Google Patents
シリコン窒化膜の形成方法Info
- Publication number
- JP3328645B2 JP3328645B2 JP2000241221A JP2000241221A JP3328645B2 JP 3328645 B2 JP3328645 B2 JP 3328645B2 JP 2000241221 A JP2000241221 A JP 2000241221A JP 2000241221 A JP2000241221 A JP 2000241221A JP 3328645 B2 JP3328645 B2 JP 3328645B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- chamber
- pressure
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 33
- 238000012545 processing Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 description 23
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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Description
コン窒化膜を形成するシリコン窒化膜の形成方法に関す
る。
ielectric strength)と不純物拡散に優れたバリヤー特
性(barrier properties)及び優柔な化学的安定度(go
od chemical stability)を有するので、集積回路の製
造の際にゲート誘電膜(gate dielectries)、拡散マス
ク(diffusion masks)、及び保護膜として広く使用さ
れている。
ュベーション時間(incubation time)を減らすため、
膜質の蒸着前にウェーハ上に形成された自然酸化膜(S
iO2)を窒化膜(Si2N4)化するための前処理段階
としてNH3処理工程を施す必要がある。このNH3処理
は一般に高温(例えば780℃)/低圧(例えば、0.
03Torr(4Pa))の工程条件下で実施されてい
る。これは上述の温度よりも低い温度条件下で前処理作
業を実施すると、下部膜(例えば、自然酸化膜)の窒化
(nitridation)効果が低減し、シリコン窒化膜の形成
時に膜質の蒸着が良好に実施されないからである。
リコン窒化膜の形成時の工程条件変化を示した特性図で
ある。ここで、図3(a)は、時間帯別にチャンバ内の
温度変化を示した特性図であり、図3(b)は、時間帯
別にチャンバ内の圧力変化を示した特性図である。これ
を参照して従来のシリコン窒化膜の形成方法を第4段階
に区分して説明する。
に搭載した後、このボートを待機温度(例えば、550
℃)状態のLP・CVDチャンバ内に入れる。このと
き、チャンバ内部の圧力は760Torr(10130
0Pa)を維持するようにセッティングされ、チャンバ
としては2.25Torr(300Pa)以下で圧力制
御の可能に設計されたものが用いられる。
真空に形成するためにチャンバ内を低圧にポンピング
し、その内部温度を780℃まで上昇させる。チャンバ
内の温度が780℃まで上昇した状態で内部圧力がほぼ
真空になる程度まで低下すると、チャンバ内の残留ガス
(例えば、水蒸気)を外部に排出し、NH3処理に必要
な圧力に設定するためにチャンバ内の圧力を再び0.3
Torr(40Pa)まで上昇させる。この状態(78
0℃の高温及び0.3Torr(40Pa)の低圧状
態)でNH3処理を実施する。NH3処理が完了すると、
圧力を再び真空程度まで低下させ、チャンバ内の残留ガ
スを外部に排出し、シリコン窒化膜の形成に必要な温度
を合わせるためにチャンバ内の温度を徐々に低下させ
る。
温度が670℃まで低下すると、シリコン窒化膜の形成
に必要な圧力を合わせるためにチャンバ内の圧力を0.
18Torr(24Pa)まで上昇させる。この状態
(670℃の低温及び0.18Torr(24Pa)の
低圧状態)でシリコン窒化膜を形成する。
の形成が完了すると、チャンバ内の圧力をほぼ真空まで
低下させ、チャンバ内の残留ガスを外部に排出する。そ
して、チャンバ内の温度を初期にセッティングした55
0℃まで低下させ、内部圧力を760Torr(101
300Pa)まで上昇させ、窒化膜の形成工程を完了す
る。
ような工程条件下でシリコン窒化膜を形成する場合、膜
質蒸着時に以下のような問題が発生する。シリコン窒化
膜の形成時は、通常、下部膜(例えば、ウェーハ上に形
成された自然酸化膜)の窒化を実施するために前処理段
階としてNH3処理工程が進行されているが、前処理段
階をシリコン窒化膜が形成される温度(例えば、670
℃)で進行する場合、下部膜の窒化を所望の水準に至る
ようにすることができないことがある。そのため、窒化
膜の形成のときに膜質蒸着が好ましく実施されない。そ
の結果、現在は窒化効果を高めるためにNH3処理を7
80℃程度の高温で実施している。
施する場合、チャンバ内の温度を待機温度の550℃か
ら780℃まで高める過程において、チャンバ内に残留
したガス分子が活性化される。そのため、NH3処理前
にチャンバの内部を真空状態まで低くさせるのに必要な
ポンピング時間が長くなるだけでなく、NH3処理時の
温度(例えば、780℃)がシリコン窒化膜の形成時の
温度(例えば、670℃)よりも高く、チャンバ内の温
度を780℃から670℃に低下させるにも相当に長い
時間が要求されるため、シリコン窒化膜の形成時に全体
の工程に要する時間が長くなるという問題点が発生す
る。このような問題が発生する場合、工程時間ロスによ
る生産性の低下が生じ、これに対する改善策が至急要求
されている。
圧/低温の工程条件下で実施することにより、窒化効果
が低下することなくNH3処理時に必要な時間を削減
し、シリコン窒化膜の形成時に生じる時間的なロスを防
止し、生産性を向上するシリコン窒化膜の形成方法を提
供することにある。
め本発明のシリコン窒化膜の形成方法によると、酸化膜
が形成されたウェーハを高圧バルブを有するLP・CV
Dチャンバ内に入れ、高圧/低温の条件下でNH3処理
を実施する処理段階と、処理段階と同一の温度でシリコ
ン窒化膜を形成する段階とを含んでいる。このとき、処
理段階における低温条件は670±50℃の範囲内に設
定され、処理段階における高圧条件は5〜300Tor
r(660Pa〜40000Pa)に設定されている。
成する場合、NH3処理が高圧/低温の条件下で実施さ
れるので、NH3処理前にチャンバ内部を真空にするま
でに必要なポンピング時間を従来よりも削減できる。ま
た、NH3処理段階の温度とシリコン窒化膜の形成段階
の温度とが同一であるので、NH3処理後のチャンバ内
の温度を低下させる必要がなく、シリコン窒化膜の形成
時に発生する時間的なロスを防止できる。
実施例について説明する。図1は、本発明の実施例によ
るNH3処理工程を含むシリコン窒化膜の形成時の工程
条件変化を示した特性図である。図1(a)は、時間帯
別にチャンバ内の温度変化を示した特性図であり、図1
(b)は、時間帯別にチャンバ内の圧力変化を示した特
性図である。これらを参照して本発明に係るシリコン窒
化膜の形成方法を第4段階に区部して説明する。
に搭載した後、ボートを待機状態温度(例えば550
℃)状態のLP・CVDチャンバ内に入れる。このと
き、チャンバ内の圧力は760Torr(101300
Pa)を維持するようにセッティングされ、チャンバと
しては1000Torr(133300Pa)までの広
い範囲で圧力制御が可能に設計された高圧バルブを有す
るLP・CVDチャンバが用いられる。高圧バルブを有
するLP・CVDチャンバは膜質を蒸着するときに広く
用いられるチャンバであるので、ここでは説明を省略す
る。
真空状態を形成するためにチャンバの内部を低圧にポン
ピングし、その内部温度を670℃まで上昇させる。こ
こでは、一例としてチャンバ内の温度が670℃の場合
について示しているが、670±50℃の範囲内で変更
可能である。チャンバ内の温度が670℃まで上がった
状態で内部の圧力がほぼ真空状態(0Pa)まで低下す
ると、チャンバ内の残留ガス(例えば、水蒸気)を外部
に排出し、NH3処理に必要な圧力を維持するためにチ
ャンバ内の圧力を再び5.0Torr(660Pa)ま
で上昇させる。この場合も、チャンバ内の圧力が5.0
Torr(660Pa)の場合に限って図示している
が、5.0〜300Torr(660Pa〜40000
Pa)の範囲内で圧力を変更可能である。この状態(6
70℃の低温及び5.0Torr(660Pa)の高圧
状態)でNH3処理を施す。NH3処理が完了すると、チ
ャンバ内の温度を670℃に維持したまま圧力だけを再
びほとんど真空(0Pa)まで低くしチャンバ内の残留
ガスを外部に排出する。
温度を670℃に維持したままシリコン窒化膜の形成時
に必要な圧力を維持するためにチャンバ内の圧力を0.
18Torr(24Pa)まで上昇させる。この状態
(670℃の低温及び0.18Torr(24Pa)の
低圧状態)でシリコン窒化膜を形成する。
の形成が完了されると、チャンバ内の圧力をほぼ真空
(0Pa)まで低下させチャンバ内の残留ガスを外部に
排出した後、チャンバ内の温度を初期にセッティングさ
れた550℃まで低下させ、圧力を760Torr(1
01300Pa)まで上げることにより、窒化膜の形成
工程を完了する。
合、NH3処理が低圧/高温の条件でない高圧/低圧条
件下で実施されるため、NH3処理前にチャンバ内部を
ほとんど真空状態の0Paまで低くするに要するポンピ
ング時間を従来よりも削減することができる。これは、
NH3処理時に必要な温度が780℃から670±50
℃まで低下することにより、低圧/高温の工程条件下で
NH3処理を施した場合と比べチャンバ内の残留ガス分
子の活性化を抑制することができるためである。また、
NH3処理のときに設定される温度条件とシリコン窒化
膜の形成のときに設定される温度条件が同一でるので、
NH3処理後にチャンバ内の温度を下げる必要がなく、
この過程で発生する時間的なロスも低減することができ
る。その結果、シリコン窒化膜の形成時に必要な総工程
進行時間を従来よりも顕著に減らすことにより、生産性
の向上を図ることができる。
件下でシリコン窒化膜を形成した場合、従来の条件下で
窒化膜の形成工程を進行した場合と比べ72分程度の時
間節減が図られる。また、上述のような工程条件下でN
H3処理を施した場合、780℃の高温で前処理を施し
た場合と同一または圧力に従ってはこれより高い窒化効
果が得られることが確認されたが、図2にはこれを立証
するための実験結果を示している。
下でシリコン窒化膜を形成した場合と、図1に示すよう
な本実施例による工程条件下でシリコン窒化膜を形成し
た場合におけるシリコン窒化膜の蒸着率精度を比較して
示したグラフである。通常窒化精度はシリコン窒化膜の
蒸着率に比例するため、ここでは一例としてNH3処理
時のチャンバ内の圧力変化に従うシリコン窒化膜の蒸着
率精度を比較評価した。
れた部分は、0.3Torr(40Pa)の低圧及び7
80℃の高温条件下でNH3処理を実施した場合におけ
るシリコン窒化膜の蒸着程度を現し、他の部分は2.5
Torr(330Pa)以上の高圧及び670℃の低温
条件下でNH3処理が実施された場合のシリコン窒化膜
の蒸着精度を現したものである。
バ内のトップ部でのシリコン窒化膜の蒸着厚さを現し、
Cはチャンバ内のセンター部でのシリコン窒化膜の蒸着
厚さを現し、Bはチャンバ内のボトム部でのシリコン窒
化膜の蒸着厚さを現す。そして、T(D/R)はチャン
バ内のトップ部におけるシリコン窒化膜の蒸着率(Å/
min)を、C(D/R)はチャンバ内のセンター部に
おけるシリコン窒化膜の蒸着率、B(D/R)はチャン
バ内のボトム部におけるシリコン窒化膜の蒸着率をそれ
ぞれ示している。
リコン窒化膜の蒸着率がゾーン別(例えば、トップ部セ
ンター部及びボトム部ごと)に(1.7、1.3、1.
10)と測定されたが、温度を670℃、圧力を5To
rr(660Pa)以上に高めると、REFに対するシ
リコン窒化膜の蒸着率がこれらよりも高くなることがわ
かる。即ち、温度が670℃で同一であるという条件下
でチャンバ内の圧力を5Torr(660Pa)である
場合はシリコン窒化膜のゾーン別の蒸着率が(1.8、
1.4、1.16)となり、10Torr(1330P
a)の場合はそれぞれ(1.8、1.4、1.20)と
なった。
実施例の工程条件化でシリコン窒化膜を蒸着した場合、
図3に示す従来のようなシリコン窒化膜を蒸着した場合
よりもその窒化効果が大きく現われることがわかる。
が大きくなると、半導体素子(特にキャパシタ)の製造
のときに既存よりも優れた誘電膜特性を確保することが
でき、誘電膜の薄膜化が可能であると同時に、キャパシ
タのBV(Breakdown Voltage)特性を改善させること
ができるという付加的な効果も得られる。
明したが、本発明はこれに限定されず、本発明の技術的
思想内で当分野の通常の知識によりその変形及び改良が
可能なのは当然のことである。
シリコン窒化膜の形成のときにNH3処理を高圧バルブ
を有するLP・CVDチャンバ内で高圧/低温の条件下
で実施することにより、窒化効果の低下なしにシリコン
窒化膜の形成のとき必要な総工程時間を従来よりも顕著
に減少することができる。そして、工程時間ロスの発生
を防止し、生産性の向上を図ることができるという効果
がある。
法によってシリコン窒化膜を形成する際の工程条件の変
化を示す図であって、(a)は温度変化、(b)は圧力
変化を示す図である。
法と従来のシリコン窒化膜形成方法とを比較し、異なる
条件下におけるシリコン窒化膜の蒸着率精度を示す図で
ある。
コン窒化膜を形成する際の工程条件の変化を示す図であ
って、(a)は温度変化、(b)は圧力変化を示す図で
ある。
Claims (2)
- 【請求項1】 酸化膜が形成されたウェーハを高圧バル
ブを有するLP・CVDチャンバ内に入れ、高圧/低温
条件下でNH3処理を施す処理段階と、 前記処理段階と同一の温度でシリコン窒化膜を形成する
段階と、 を含み、 前記処理段階における高圧条件は、660〜40000
Paの範囲内に設定され、 前記処理段階における低温条件は、670±50℃の範
囲内に設定されている ことを特徴とするシリコン窒化膜
の形成方法。 - 【請求項2】 前記酸化膜は、自然酸化膜であることを
特徴とする請求項1に記載のシリコン窒化膜の形成方
法。
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KR1019990047490A KR100340716B1 (ko) | 1999-10-29 | 1999-10-29 | 실리콘 질화막 형성방법 |
KR1999P47490 | 1999-10-29 |
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JP2001135637A JP2001135637A (ja) | 2001-05-18 |
JP3328645B2 true JP3328645B2 (ja) | 2002-09-30 |
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ID=19617630
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US (1) | US6326322B1 (ja) |
JP (1) | JP3328645B2 (ja) |
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TW (1) | TW477828B (ja) |
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US4877651A (en) | 1988-05-31 | 1989-10-31 | Olin Corporation | Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate |
JP3660391B2 (ja) * | 1994-05-27 | 2005-06-15 | 株式会社東芝 | 半導体装置の製造方法 |
JPH08167605A (ja) * | 1994-12-15 | 1996-06-25 | Mitsubishi Electric Corp | シリコン窒化膜の製造方法 |
US6090686A (en) * | 1997-06-18 | 2000-07-18 | Lucent Technologies, Inc. | Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same |
TW392212B (en) * | 1998-09-21 | 2000-06-01 | Mosel Vitelic Inc | Low pressure silicon nitrides deposition method that can reduce particle production |
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