JP3226548B2 - 薄膜多層コンデンサ - Google Patents
薄膜多層コンデンサInfo
- Publication number
- JP3226548B2 JP3226548B2 JP54135397A JP54135397A JP3226548B2 JP 3226548 B2 JP3226548 B2 JP 3226548B2 JP 54135397 A JP54135397 A JP 54135397A JP 54135397 A JP54135397 A JP 54135397A JP 3226548 B2 JP3226548 B2 JP 3226548B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- multilayer capacitor
- layers
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 87
- 239000010409 thin film Substances 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims description 30
- 239000007772 electrode material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 239000000919 ceramic Substances 0.000 claims description 23
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910018921 CoO 3 Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910019899 RuO Inorganic materials 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 244000191761 Sida cordifolia Species 0.000 claims description 2
- 229910004121 SrRuO Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000012935 Averaging Methods 0.000 claims 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 239000000203 mixture Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19620434 | 1996-05-21 | ||
DE19620434.8 | 1996-05-21 | ||
PCT/DE1997/000914 WO1997044797A1 (de) | 1996-05-21 | 1997-05-05 | Dünnfilm mehrschichtkondensator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11511906A JPH11511906A (ja) | 1999-10-12 |
JP3226548B2 true JP3226548B2 (ja) | 2001-11-05 |
Family
ID=7794899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54135397A Expired - Fee Related JP3226548B2 (ja) | 1996-05-21 | 1997-05-05 | 薄膜多層コンデンサ |
Country Status (8)
Country | Link |
---|---|
US (1) | US6108191A (zh) |
EP (1) | EP0902954A1 (zh) |
JP (1) | JP3226548B2 (zh) |
KR (1) | KR20000015822A (zh) |
CN (1) | CN1219277A (zh) |
BR (1) | BR9709333A (zh) |
UA (1) | UA41477C2 (zh) |
WO (1) | WO1997044797A1 (zh) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005695B1 (en) * | 2000-02-23 | 2006-02-28 | Micron Technology, Inc. | Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region |
US6762141B2 (en) | 2000-03-13 | 2004-07-13 | Siemens Aktiengesellschaft | Ceramic mass, method for the production of a ceramic mass and use of a ceramic mass |
US7221243B2 (en) * | 2001-04-11 | 2007-05-22 | Kyocera Wireless Corp. | Apparatus and method for combining electrical signals |
US7164329B2 (en) | 2001-04-11 | 2007-01-16 | Kyocera Wireless Corp. | Tunable phase shifer with a control signal generator responsive to DC offset in a mixed signal |
US7174147B2 (en) * | 2001-04-11 | 2007-02-06 | Kyocera Wireless Corp. | Bandpass filter with tunable resonator |
US7394430B2 (en) * | 2001-04-11 | 2008-07-01 | Kyocera Wireless Corp. | Wireless device reconfigurable radiation desensitivity bracket systems and methods |
US7154440B2 (en) * | 2001-04-11 | 2006-12-26 | Kyocera Wireless Corp. | Phase array antenna using a constant-gain phase shifter |
US7746292B2 (en) | 2001-04-11 | 2010-06-29 | Kyocera Wireless Corp. | Reconfigurable radiation desensitivity bracket systems and methods |
US6690251B2 (en) * | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
US7071776B2 (en) | 2001-10-22 | 2006-07-04 | Kyocera Wireless Corp. | Systems and methods for controlling output power in a communication device |
US7176845B2 (en) * | 2002-02-12 | 2007-02-13 | Kyocera Wireless Corp. | System and method for impedance matching an antenna to sub-bands in a communication band |
US7180467B2 (en) * | 2002-02-12 | 2007-02-20 | Kyocera Wireless Corp. | System and method for dual-band antenna matching |
US7184727B2 (en) * | 2002-02-12 | 2007-02-27 | Kyocera Wireless Corp. | Full-duplex antenna system and method |
US6898070B2 (en) * | 2002-12-19 | 2005-05-24 | Avx Corporation | Transmission line capacitor |
KR20050102642A (ko) * | 2003-02-20 | 2005-10-26 | 엔.브이. 베카에르트 에스.에이. | 적층 구조물의 제조방법 |
US7720443B2 (en) | 2003-06-02 | 2010-05-18 | Kyocera Wireless Corp. | System and method for filtering time division multiple access telephone communications |
US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
US7125781B2 (en) | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
US20060001068A1 (en) * | 2004-06-30 | 2006-01-05 | Mosley Larry E | Multi-layer capacitor using dielectric layers having differing compositions |
US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US20060046055A1 (en) * | 2004-08-30 | 2006-03-02 | Nan Ya Plastics Corporation | Superfine fiber containing grey dope dyed component and the fabric made of the same |
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7320911B2 (en) * | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7557015B2 (en) * | 2005-03-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
JP2006278566A (ja) * | 2005-03-28 | 2006-10-12 | Tdk Corp | 積層電子部品及びその製造方法 |
US7517753B2 (en) * | 2005-05-18 | 2009-04-14 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7544563B2 (en) * | 2005-05-18 | 2009-06-09 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7548762B2 (en) * | 2005-11-30 | 2009-06-16 | Kyocera Corporation | Method for tuning a GPS antenna matching network |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7557013B2 (en) * | 2006-04-10 | 2009-07-07 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7602001B2 (en) * | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7902081B2 (en) * | 2006-10-11 | 2011-03-08 | Micron Technology, Inc. | Methods of etching polysilicon and methods of forming pluralities of capacitors |
US7785962B2 (en) * | 2007-02-26 | 2010-08-31 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7772879B1 (en) * | 2007-04-11 | 2010-08-10 | Actel Corporation | Logic module including versatile adder for FPGA |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US7682924B2 (en) * | 2007-08-13 | 2010-03-23 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7663400B1 (en) * | 2007-12-21 | 2010-02-16 | Actel Corporation | Flexible carry scheme for field programmable gate arrays |
US8388851B2 (en) | 2008-01-08 | 2013-03-05 | Micron Technology, Inc. | Capacitor forming methods |
US8244791B1 (en) | 2008-01-30 | 2012-08-14 | Actel Corporation | Fast carry lookahead circuits |
US9324071B2 (en) | 2008-03-20 | 2016-04-26 | Visa U.S.A. Inc. | Powering financial transaction token with onboard power source |
US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
JP2009295683A (ja) * | 2008-06-03 | 2009-12-17 | Tdk Corp | チップ型電子部品 |
US7759193B2 (en) | 2008-07-09 | 2010-07-20 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
JP5766011B2 (ja) * | 2011-05-06 | 2015-08-19 | 京セラ株式会社 | 静電容量素子 |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
CN103319167A (zh) * | 2012-03-22 | 2013-09-25 | 禾伸堂企业股份有限公司 | 介电陶瓷材料及其所制成的积层陶瓷电容 |
US8652926B1 (en) | 2012-07-26 | 2014-02-18 | Micron Technology, Inc. | Methods of forming capacitors |
CN103208415B (zh) * | 2013-03-22 | 2016-08-24 | 上海华虹宏力半导体制造有限公司 | 电容及其形成方法 |
JP2017120853A (ja) * | 2015-12-28 | 2017-07-06 | Tdk株式会社 | セラミック電子部品 |
WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
CN111223669B (zh) * | 2020-01-10 | 2021-08-03 | 河南理工大学 | 一种高储能密度的固态电介质薄膜电容器及其制备方法 |
US20220122771A1 (en) * | 2020-10-19 | 2022-04-21 | Imagine Tf, Llc | Layered capacitor with two different types of electrode material |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210607A (en) * | 1961-09-07 | 1965-10-05 | Texas Instruments Inc | Ferroelectric capacitor apparatus |
US4219866A (en) * | 1979-01-12 | 1980-08-26 | Sprague Electric Company | Ceramic capacitor having a dielectric of (Pb,La) (Zr,Ti)O3 and BaTiO3 |
DE3442790A1 (de) * | 1984-11-23 | 1986-06-05 | Dieter Prof. Dr. Linz Bäuerle | Verfahren zur herstellung von duennschichtkondensatoren |
FR2617631A1 (fr) * | 1987-06-30 | 1989-01-06 | Thomson Csf | Condensateur multicouche a base de polymere ferroelectrique |
JPH0666219B2 (ja) * | 1989-02-22 | 1994-08-24 | 株式会社村田製作所 | 積層セラミックスコンデンサ |
JP2800017B2 (ja) * | 1989-04-05 | 1998-09-21 | 株式会社村田製作所 | 積層セラミックスコンデンサ |
JPH0650701B2 (ja) * | 1989-05-18 | 1994-06-29 | 松下電器産業株式会社 | 積層コンデンサ素子とその製造方法 |
DE4300808C1 (de) * | 1993-01-14 | 1994-03-17 | Siemens Ag | Verfahren zur Herstellung eines Vielschichtkondensators |
DE69401826T2 (de) * | 1993-03-25 | 1997-06-12 | Matsushita Electric Ind Co Ltd | Dünnschichtkondensator und Verfahren zu seiner Herstellung |
JPH07142288A (ja) * | 1993-11-18 | 1995-06-02 | Asahi Glass Co Ltd | 積層薄膜コンデンサの製造方法 |
JPH07161223A (ja) * | 1993-12-10 | 1995-06-23 | Murata Mfg Co Ltd | 導電性ペーストおよび積層セラミックコンデンサ |
GB9401226D0 (en) * | 1994-01-22 | 1994-03-16 | Oxley Dev Co Ltd | Fabrication of capacitors and electrostrictive devices |
JP3498190B2 (ja) * | 1994-06-06 | 2004-02-16 | 株式会社村田製作所 | 薄膜積層電極の製造方法 |
EP1391441A3 (en) * | 1994-10-19 | 2004-03-03 | TDK Corporation | Multi layer ceramic chip capacitor |
JPH10139536A (ja) * | 1996-11-12 | 1998-05-26 | Murata Mfg Co Ltd | 誘電体磁器組成物 |
-
1997
- 1997-05-05 JP JP54135397A patent/JP3226548B2/ja not_active Expired - Fee Related
- 1997-05-05 EP EP97925839A patent/EP0902954A1/de not_active Ceased
- 1997-05-05 BR BR9709333A patent/BR9709333A/pt unknown
- 1997-05-05 CN CN97194807A patent/CN1219277A/zh active Pending
- 1997-05-05 UA UA98116107A patent/UA41477C2/uk unknown
- 1997-05-05 WO PCT/DE1997/000914 patent/WO1997044797A1/de not_active Application Discontinuation
- 1997-05-05 KR KR1019980709372A patent/KR20000015822A/ko not_active Application Discontinuation
-
1998
- 1998-11-23 US US09/197,888 patent/US6108191A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH11511906A (ja) | 1999-10-12 |
BR9709333A (pt) | 1999-08-10 |
US6108191A (en) | 2000-08-22 |
KR20000015822A (ko) | 2000-03-15 |
WO1997044797A1 (de) | 1997-11-27 |
UA41477C2 (uk) | 2001-09-17 |
CN1219277A (zh) | 1999-06-09 |
EP0902954A1 (de) | 1999-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3226548B2 (ja) | 薄膜多層コンデンサ | |
US8451582B2 (en) | Capacitors with high energy storage density and low ESR | |
EP0794542B1 (en) | Dielectric ceramic and monolithic ceramic electronic part using the same | |
US8218287B2 (en) | Thin-film device | |
JP2006523153A (ja) | 金属箔上におけるチタン酸バリウムストロンチウムを含む多層構造 | |
CN1790569B (zh) | 电介质薄膜、薄膜电介质元件及其制造方法 | |
US20220044875A1 (en) | Thin film capacitor | |
JPH03274607A (ja) | 誘電体組成物 | |
JPH10214947A (ja) | 薄膜誘電体素子 | |
US11114249B2 (en) | Thin-film capacitor | |
CN113161147A (zh) | 多层电子组件 | |
US20240222013A1 (en) | Multilayer electronic component and method of manufacturing the same | |
CN217544376U (zh) | 层叠陶瓷电容器 | |
US20230170149A1 (en) | Multilayer electronic component | |
US11955287B2 (en) | Multilayer electronic component | |
US11837406B2 (en) | Multilayer electronic component | |
JPS6323647B2 (zh) | ||
US20240203658A1 (en) | Multilayer electronic component | |
JP2590323B2 (ja) | セラミツクの製造法 | |
JPH11126977A (ja) | 配線板の製造方法 | |
KR20240106898A (ko) | 적층형 전자 부품 및 그 제조 방법 | |
MXPA98009667A (en) | Converter of various layers with high specific capacity and manufacturing procedure for elmi | |
JP2590322B2 (ja) | セラミツクの製造法 | |
JPH0677083A (ja) | 薄膜コンデンサおよびその製造方法 | |
JP2024086525A (ja) | 積層型電子部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |