JPS6323647B2 - - Google Patents
Info
- Publication number
- JPS6323647B2 JPS6323647B2 JP20075583A JP20075583A JPS6323647B2 JP S6323647 B2 JPS6323647 B2 JP S6323647B2 JP 20075583 A JP20075583 A JP 20075583A JP 20075583 A JP20075583 A JP 20075583A JP S6323647 B2 JPS6323647 B2 JP S6323647B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- capacitor
- dielectric
- srtio
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 35
- 229910002367 SrTiO Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20075583A JPS6094716A (ja) | 1983-10-28 | 1983-10-28 | 薄膜コンデンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20075583A JPS6094716A (ja) | 1983-10-28 | 1983-10-28 | 薄膜コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094716A JPS6094716A (ja) | 1985-05-27 |
| JPS6323647B2 true JPS6323647B2 (zh) | 1988-05-17 |
Family
ID=16429634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20075583A Granted JPS6094716A (ja) | 1983-10-28 | 1983-10-28 | 薄膜コンデンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094716A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117003U (zh) * | 1989-03-01 | 1990-09-19 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02121313A (ja) * | 1988-10-29 | 1990-05-09 | Matsushita Electric Ind Co Ltd | 多層薄膜コンデンサ |
| JPH0687493B2 (ja) * | 1990-03-07 | 1994-11-02 | 日本電気株式会社 | 薄膜コンデンサ |
| JPH09139480A (ja) * | 1995-01-27 | 1997-05-27 | Toshiba Corp | 薄膜キャパシタおよびこれを用いた半導体記憶装置 |
-
1983
- 1983-10-28 JP JP20075583A patent/JPS6094716A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117003U (zh) * | 1989-03-01 | 1990-09-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6094716A (ja) | 1985-05-27 |
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