JP3059487B2 - 液晶表示装置 - Google Patents
液晶表示装置Info
- Publication number
- JP3059487B2 JP3059487B2 JP8515202A JP51520296A JP3059487B2 JP 3059487 B2 JP3059487 B2 JP 3059487B2 JP 8515202 A JP8515202 A JP 8515202A JP 51520296 A JP51520296 A JP 51520296A JP 3059487 B2 JP3059487 B2 JP 3059487B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- anodizing
- substrate
- electrodes
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 210
- 239000010408 film Substances 0.000 claims description 353
- 238000007743 anodising Methods 0.000 claims description 348
- 239000000758 substrate Substances 0.000 claims description 245
- 239000010410 layer Substances 0.000 claims description 153
- 238000005530 etching Methods 0.000 claims description 128
- 230000003647 oxidation Effects 0.000 claims description 127
- 238000007254 oxidation reaction Methods 0.000 claims description 127
- 238000000034 method Methods 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 44
- 239000011159 matrix material Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000010407 anodic oxide Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000002048 anodisation reaction Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 description 75
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 72
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 39
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 35
- 238000000926 separation method Methods 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 22
- 229910018503 SF6 Inorganic materials 0.000 description 18
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 18
- 229960000909 sulfur hexafluoride Drugs 0.000 description 18
- 229910001936 tantalum oxide Inorganic materials 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 238000007689 inspection Methods 0.000 description 12
- 230000036961 partial effect Effects 0.000 description 12
- 239000011651 chromium Substances 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000003068 static effect Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910004446 Ta2 O5 Inorganic materials 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000012447 hatching Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 150000003481 tantalum Chemical class 0.000 description 3
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YWIBETYWGSNTAE-UHFFFAOYSA-N [Br].Br Chemical compound [Br].Br YWIBETYWGSNTAE-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27394194 | 1994-11-08 | ||
| JP6-273941 | 1994-11-08 | ||
| PCT/JP1995/002285 WO1996014599A1 (en) | 1994-11-08 | 1995-11-08 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO1996014599A1 JPWO1996014599A1 (ja) | 1997-11-25 |
| JP3059487B2 true JP3059487B2 (ja) | 2000-07-04 |
Family
ID=17534706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8515202A Expired - Fee Related JP3059487B2 (ja) | 1994-11-08 | 1995-11-08 | 液晶表示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6128050A (en:Method) |
| EP (1) | EP0793135B1 (en:Method) |
| JP (1) | JP3059487B2 (en:Method) |
| WO (1) | WO1996014599A1 (en:Method) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| JP3866783B2 (ja) * | 1995-07-25 | 2007-01-10 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| JPH10221683A (ja) * | 1997-02-07 | 1998-08-21 | Alps Electric Co Ltd | 液晶表示装置およびその製造方法 |
| JP3538844B2 (ja) * | 1997-07-23 | 2004-06-14 | セイコーエプソン株式会社 | 液晶装置、液晶装置の製造方法及び電子機器 |
| US6388652B1 (en) * | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
| JP3102392B2 (ja) * | 1997-10-28 | 2000-10-23 | 日本電気株式会社 | 半導体デバイスおよびその製造方法 |
| JP3119228B2 (ja) * | 1998-01-20 | 2000-12-18 | 日本電気株式会社 | 液晶表示パネル及びその製造方法 |
| KR100474002B1 (ko) * | 1998-04-28 | 2005-07-18 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의불량패드수리방법및그구조 |
| US6577375B1 (en) * | 1998-12-28 | 2003-06-10 | Kyocera Corporation | Liquid crystal display device having particular sapphire substrates |
| US6825488B2 (en) * | 2000-01-26 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2001343663A (ja) * | 2000-05-31 | 2001-12-14 | Sony Corp | 液晶表示装置及びその製造方法 |
| US6784506B2 (en) * | 2001-08-28 | 2004-08-31 | Advanced Micro Devices, Inc. | Silicide process using high K-dielectrics |
| JP2003172946A (ja) * | 2001-09-28 | 2003-06-20 | Fujitsu Display Technologies Corp | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
| TW588831U (en) * | 2002-02-07 | 2004-05-21 | Jiun-Fu Liou | Writing plate computer capable of switching display output and externally connecting input apparatus |
| JP3925486B2 (ja) * | 2003-01-23 | 2007-06-06 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置及び電子機器 |
| JP4938377B2 (ja) * | 2006-07-26 | 2012-05-23 | オプトレックス株式会社 | 液晶表示装置の検査方法 |
| JP4871083B2 (ja) * | 2006-09-27 | 2012-02-08 | テルモ株式会社 | 体液採取ユニット |
| DE202007002770U1 (de) * | 2007-02-26 | 2008-07-10 | Aeg Gesellschaft für Moderne Informationssysteme mbH | LCD-Anzeigeelement und LCD-Anzeigetafel |
| TWI360683B (en) * | 2007-09-14 | 2012-03-21 | Chimei Innolux Corp | Display module |
| TWI679754B (zh) * | 2018-11-26 | 2019-12-11 | 友達光電股份有限公司 | 元件基板 |
| CN109727999B (zh) * | 2019-01-02 | 2020-07-03 | 合肥京东方显示技术有限公司 | 阵列基板的制备方法、阵列基板及显示装置 |
| US20230420511A1 (en) * | 2022-06-27 | 2023-12-28 | Intel Corporation | Stacked single crystal transition-metal dichalcogenide using seeded growth |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4404555A (en) * | 1981-06-09 | 1983-09-13 | Northern Telecom Limited | Addressing scheme for switch controlled liquid crystal displays |
| JPS59124162A (ja) * | 1982-12-29 | 1984-07-18 | Sharp Corp | 薄膜トランジスタ |
| JPS59131974A (ja) * | 1983-01-18 | 1984-07-28 | セイコーエプソン株式会社 | 液晶表示装置 |
| JPS60120399A (ja) * | 1983-12-02 | 1985-06-27 | シチズン時計株式会社 | ダイオ−ド型表示装置の駆動方法 |
| JPS61260220A (ja) * | 1985-05-15 | 1986-11-18 | Seiko Epson Corp | 液晶セルの製造方法 |
| JPS63195687A (ja) * | 1987-02-09 | 1988-08-12 | セイコーエプソン株式会社 | アクテイブマトリツクス基板の端子構造 |
| JPS63208023A (ja) * | 1987-02-25 | 1988-08-29 | Alps Electric Co Ltd | 液晶表示素子の製造方法 |
| JP2610328B2 (ja) * | 1988-12-21 | 1997-05-14 | 株式会社東芝 | 液晶表示素子の製造方法 |
| US5294560A (en) * | 1989-01-13 | 1994-03-15 | Seiko Epson Corporation | Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof |
| EP0381927A3 (en) * | 1989-01-13 | 1991-08-14 | Seiko Epson Corporation | Bidirectional non-linear resistor, active matrix liquid-crystal panel using the same, and method for its production |
| JPH02210331A (ja) * | 1989-02-09 | 1990-08-21 | Ricoh Co Ltd | 液晶表示装置 |
| JP2870016B2 (ja) * | 1989-05-18 | 1999-03-10 | セイコーエプソン株式会社 | 液晶装置 |
| JPH0327026A (ja) * | 1989-06-23 | 1991-02-05 | Fuji Electric Co Ltd | 液晶表示素子 |
| US5019002A (en) * | 1989-07-12 | 1991-05-28 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby |
| JP3009438B2 (ja) * | 1989-08-14 | 2000-02-14 | 株式会社日立製作所 | 液晶表示装置 |
| JPH03125123A (ja) * | 1989-10-09 | 1991-05-28 | Sharp Corp | アクティブマトリクス表示装置及びその製造方法 |
| JPH04120518A (ja) * | 1990-09-12 | 1992-04-21 | Hitachi Ltd | 液晶表示装置の製造方法 |
| TW201343B (en:Method) * | 1990-11-21 | 1993-03-01 | Toshiba Co Ltd | |
| JPH0643494A (ja) * | 1991-06-17 | 1994-02-18 | Seiko Epson Corp | 電気光学装置の製造方法 |
| JP2814161B2 (ja) * | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
| DE69326203T2 (de) * | 1992-07-03 | 2000-05-18 | Citizen Watch Co., Ltd. | Flüssigkristall-Anzeigevorrichtung mit nichtlinearen Widerstandselementen |
| JPH07104315A (ja) * | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 液晶表示装置 |
| JPH07104316A (ja) * | 1993-10-07 | 1995-04-21 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
| JPH07131030A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
| JP3125123B2 (ja) | 1993-11-30 | 2001-01-15 | 西川ゴム工業株式会社 | ウエザーストリップの型成形方法 |
| US5753937A (en) * | 1994-05-31 | 1998-05-19 | Casio Computer Co., Ltd. | Color liquid crystal display device having a semitransparent layer on the inner surface of one of the substrates |
| US5861928A (en) * | 1994-07-21 | 1999-01-19 | Citizen Watch Co., Ltd. | Liquid crystal display device having opening portions |
-
1995
- 1995-11-08 WO PCT/JP1995/002285 patent/WO1996014599A1/ja not_active Ceased
- 1995-11-08 US US08/836,481 patent/US6128050A/en not_active Expired - Fee Related
- 1995-11-08 EP EP95936756A patent/EP0793135B1/en not_active Expired - Lifetime
- 1995-11-08 JP JP8515202A patent/JP3059487B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-20 US US09/553,403 patent/US6327443B1/en not_active Expired - Fee Related
- 2000-11-28 US US09/722,309 patent/US6388720B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0793135B1 (en) | 2002-02-20 |
| US6128050A (en) | 2000-10-03 |
| EP0793135A1 (en) | 1997-09-03 |
| US6388720B1 (en) | 2002-05-14 |
| EP0793135A4 (en:Method) | 1997-09-03 |
| WO1996014599A1 (en) | 1996-05-17 |
| US6327443B1 (en) | 2001-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3059487B2 (ja) | 液晶表示装置 | |
| JP4354542B2 (ja) | 液晶表示装置及びその製造方法 | |
| KR100276442B1 (ko) | 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치 | |
| KR100583311B1 (ko) | 액정표시패널 및 그 제조 방법 | |
| US7545463B2 (en) | Liquid crystal display device and fabricating method thereof | |
| JP4266793B2 (ja) | 液晶表示装置用アレイ基板 | |
| US6731364B2 (en) | Liquid crystal display device | |
| JPWO1996014599A1 (ja) | 液晶表示装置 | |
| JP2008107849A (ja) | 液晶表示装置及びその製造方法 | |
| JP2005122182A (ja) | 表示素子用の薄膜トランジスタ基板及び製造方法 | |
| JP2004302466A (ja) | 水平電界印加型液晶表示装置及びその製造方法 | |
| JP2004310027A (ja) | 液晶表示装置及びその製造方法 | |
| JP4646539B2 (ja) | 液晶表示装置とその製造方法 | |
| KR101221261B1 (ko) | 액정 표시 장치용 어레이 기판 및 그 제조 방법 | |
| US7872698B2 (en) | Liquid crystal display with structure resistant to exfoliation during fabrication | |
| US6600546B1 (en) | Array substrate for liquid crystal display device and the fabrication method of the same | |
| JP2001244473A (ja) | 薄膜トランジスタ、これを利用した液晶表示装置およびそれらの製造方法 | |
| US7023501B2 (en) | Liquid crystal display device having particular connections among drain and pixel electrodes and contact hole | |
| KR100942265B1 (ko) | 씨오티 구조 액정표시장치 및 제조방법 | |
| JP5667424B2 (ja) | 薄膜トランジスタ、アクティブマトリクス基板、およびそれらの製造方法 | |
| JP3231410B2 (ja) | 薄膜トランジスタアレイ及びその製造方法 | |
| CN113589612B (zh) | 阵列基板及制作方法、显示面板 | |
| JPH0695150A (ja) | 薄膜トランジスタ基板及び液晶表示装置及びその製造方法 | |
| KR100679519B1 (ko) | 액정 표시 장치 | |
| JP2741773B2 (ja) | 液晶表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090421 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100421 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |