JP3020502B2 - ダイナミックランダムアクセスメモリセルを有する半導体装置およびその製造方法 - Google Patents
ダイナミックランダムアクセスメモリセルを有する半導体装置およびその製造方法Info
- Publication number
- JP3020502B2 JP3020502B2 JP63053472A JP5347288A JP3020502B2 JP 3020502 B2 JP3020502 B2 JP 3020502B2 JP 63053472 A JP63053472 A JP 63053472A JP 5347288 A JP5347288 A JP 5347288A JP 3020502 B2 JP3020502 B2 JP 3020502B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- thickness
- oxide film
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 48
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 72
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02B—INTERNAL-COMBUSTION PISTON ENGINES; COMBUSTION ENGINES IN GENERAL
- F02B3/00—Engines characterised by air compression and subsequent fuel addition
- F02B3/06—Engines characterised by air compression and subsequent fuel addition with compression ignition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-63765 | 1987-03-20 | ||
| JP6376587 | 1987-03-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH01756A JPH01756A (ja) | 1989-01-05 |
| JPS64756A JPS64756A (en) | 1989-01-05 |
| JP3020502B2 true JP3020502B2 (ja) | 2000-03-15 |
Family
ID=13238801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63053472A Expired - Lifetime JP3020502B2 (ja) | 1987-03-20 | 1988-03-09 | ダイナミックランダムアクセスメモリセルを有する半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4907046A (ko) |
| JP (1) | JP3020502B2 (ko) |
| KR (1) | KR920005632B1 (ko) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5191402A (en) * | 1986-10-27 | 1993-03-02 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
| US5612557A (en) * | 1986-10-27 | 1997-03-18 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
| US20010008288A1 (en) * | 1988-01-08 | 2001-07-19 | Hitachi, Ltd. | Semiconductor integrated circuit device having memory cells |
| JPH01217325A (ja) * | 1988-02-25 | 1989-08-30 | Sharp Corp | 液晶表示装置 |
| US5231039A (en) * | 1988-02-25 | 1993-07-27 | Sharp Kabushiki Kaisha | Method of fabricating a liquid crystal display device |
| US5225704A (en) * | 1988-07-08 | 1993-07-06 | Mitsubishi Denki Kabushiki Kaisha | Field shield isolation structure for semiconductor memory device and method for manufacturing the same |
| JPH0221652A (ja) * | 1988-07-08 | 1990-01-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5183772A (en) * | 1989-05-10 | 1993-02-02 | Samsung Electronics Co., Ltd. | Manufacturing method for a DRAM cell |
| KR940005729B1 (ko) * | 1989-06-13 | 1994-06-23 | 삼성전자 주식회사 | 디램셀의 제조방법 및 구조 |
| JP3199717B2 (ja) * | 1989-09-08 | 2001-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
| KR930005741B1 (ko) * | 1990-11-01 | 1993-06-24 | 삼성전자 주식회사 | 터널구조의 디램 셀 및 그의 제조방법 |
| JP2825135B2 (ja) * | 1990-03-06 | 1998-11-18 | 富士通株式会社 | 半導体記憶装置及びその情報書込読出消去方法 |
| JPH0697682B2 (ja) * | 1990-03-20 | 1994-11-30 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH03276752A (ja) * | 1990-03-27 | 1991-12-06 | Matsushita Electron Corp | 半導体容量装置 |
| EP0463741B1 (en) * | 1990-05-31 | 1997-07-23 | Canon Kabushiki Kaisha | Method of manufacturing a semiconductor memory device containing a capacitor |
| JPH04144278A (ja) * | 1990-10-05 | 1992-05-18 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
| JP2838337B2 (ja) * | 1992-03-27 | 1998-12-16 | 三菱電機株式会社 | 半導体装置 |
| US5636100A (en) * | 1993-10-12 | 1997-06-03 | The United States Of America As Represented By The Secretary Of The Army | Capacitor having an enhanced dielectric breakdown strength |
| US5602051A (en) * | 1995-10-06 | 1997-02-11 | International Business Machines Corporation | Method of making stacked electrical device having regions of electrical isolation and electrical connection on a given stack level |
| US5776809A (en) * | 1996-06-10 | 1998-07-07 | Micron Technology, Inc. | Method for forming a capacitor |
| TW421886B (en) * | 1998-06-10 | 2001-02-11 | Siemens Ag | Memory-capacitor for a DRAM |
| US6204142B1 (en) | 1998-08-24 | 2001-03-20 | Micron Technology, Inc. | Methods to form electronic devices |
| US6528364B1 (en) * | 1998-08-24 | 2003-03-04 | Micron Technology, Inc. | Methods to form electronic devices and methods to form a material over a semiconductive substrate |
| US6333225B1 (en) | 1999-08-20 | 2001-12-25 | Micron Technology, Inc. | Integrated circuitry and methods of forming circuitry |
| FR2801425B1 (fr) * | 1999-11-18 | 2004-05-28 | St Microelectronics Sa | Capacite integree a dielectrique hybride |
| US6395590B1 (en) * | 2000-08-15 | 2002-05-28 | Winbond Electronics Corporation | Capacitor plate formation in a mixed analog-nonvolatile memory device |
| TWI405262B (zh) | 2007-07-17 | 2013-08-11 | Creator Technology Bv | 電子元件及電子元件之製法 |
| US8624260B2 (en) * | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL176415C (nl) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit. |
| US4505026A (en) * | 1983-07-14 | 1985-03-19 | Intel Corporation | CMOS Process for fabricating integrated circuits, particularly dynamic memory cells |
| US4536947A (en) * | 1983-07-14 | 1985-08-27 | Intel Corporation | CMOS process for fabricating integrated circuits, particularly dynamic memory cells with storage capacitors |
| JPS6065561A (ja) * | 1983-09-21 | 1985-04-15 | Hitachi Ltd | 半導体メモリ |
| JPH0648718B2 (ja) * | 1984-10-04 | 1994-06-22 | 沖電気工業株式会社 | 半導体メモリ素子の製造方法 |
| JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
| JPH0685431B2 (ja) * | 1985-06-10 | 1994-10-26 | 株式会社日立製作所 | 半導体装置 |
-
1988
- 1988-02-15 KR KR1019880001465A patent/KR920005632B1/ko not_active IP Right Cessation
- 1988-03-09 JP JP63053472A patent/JP3020502B2/ja not_active Expired - Lifetime
- 1988-03-15 US US07/168,490 patent/US4907046A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR880011887A (ko) | 1988-10-31 |
| KR920005632B1 (ko) | 1992-07-10 |
| JPS64756A (en) | 1989-01-05 |
| US4907046A (en) | 1990-03-06 |
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